• Proceedings of the IEEK Conference
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• 2000.06b
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• pp.9-11
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• 2000

To increase the device linearities and the breakdown-voltages of FETs, Al$\sub$0.25/ Ga$\sub$0.75/AS / In$\sub$0.25/Ga$\sub$0.75/As / Partially doped channel FET(DCFET) structures are proposed. The metal- insulator -semiconductor (MIS) like structures show the high gate-drain breakdown voltage(-20 V) and high linearities. The devices showed the small ripple of the current cut-off frequency and the power cut-off frequency over the wide bias range.

• Proceedings of the IEEK Conference
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• 2000.06b
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• pp.262-265
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• 2000

This paper describes design of a (32, 28) Reed Solomon decoder for optical compact disk provides double error detecting and correcting capability. The most complex circuit in the RS decoder is part for solving the error location numbers from error location polynomial, and the circuit has great influence on overall decoder complexity. We use RAM based architecture with Euclid algorithm, Chien search algorithm and Forney algorithm. We have developed VHDL model and Performed logic synthesis using the SYNOPSYS CAD tool. Then, the RS decoder has been implemented with FPGA. The total umber of gate is about 11,000 gates and it operates at 20MHz.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.5
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• pp.55-55
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• 2001

개의 N과 P채널 EEPROM을 이용하여 A/D 변환기를 설계하였다. 프로그래밍 모드에서 EEPROM의 선형적 저장능력을 관찰하기 위해 MOSIS의 1.2㎛ double-poly CMOS 공정을 이용하여 셀이 제작되었다. 그 결과 1.25V와 2V구간에서 10㎷ 미만의 오차 내에서 셀이 선형적으로 프로그램 되는 것을 보았다. 이러한 실험 결과를 이용하여 프로그램 가능한 A/D 변환기의 동작이 Hspice에서 시뮤레이션 되었으며, 그 결과 A/D 변환기가 37㎼의 전력을 소모하고 동작주파수는 333㎒ 정도인 것으로 관찰되었다.

• 제어로봇시스템학회:학술대회논문집
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• 2001.10a
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• pp.157.6-157
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• 2001

We estimated various neuron functions to construct of engineering neurons, which are the combination of sigmoid, linear, sine, quadric, double/single bended, soft max/minimum functions. These combinations are estimated by the property on the potential surface between the learning points, calculation speed, and learning convergence; because the surface depends on the inference ability of a neuron system; and speed and convergence are depend on the efficiency on the points of engineering applications. After the evaluating discussions, we can select more appropriate combination than original sigmoid function´s, which is single bended function and linear one. The combination ...

• Proceedings of the IEEK Conference
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• 1999.06a
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• pp.247-250
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• 1999

This paper presents characteristics of neuron-MOSFET for the implementation of logic circuits such at the inverter and D/A converter. Neuron-MOSFETS were fabricated using double poly CMOS process. From the measured results, it was found that noise margin of the inverter was dependant on the coupling ratio and a complete D/A characteristics of the source follower could be obtained by using any input Sate as a control gate.

• Proceedings of the IEEK Conference
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• 1999.11a
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• pp.232-235
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• 1999

In this paper, we present a coprocessor that can operate with ARM microprocessors. The coprocessor supports IEEE 754 standard single- and double-precision binary floating point arithmetic operations. The design objective is to achieve minimum-area, low-power and acceleration of processing power of ARM microprocessors. The instruction set is compatible with ARM7500FE. The coprocessor is written in verilog HDL and synthesized by the SYNOPSYS Design Compiler. The gate count is 38,115 and critical path delay is 9.52ns.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.159-161
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• 2007

We fabricated flexible OTFT-backplanes for the electrophoretic display(EPD). The OTFTs employed bottom contact structure on PEN substrate and used the cross-linked polyvinylphenol for gate insulator, pentacene for active layer. Especially, we used PVA/Acryl double layers for passivation of backplane as well as for pixel dielectric layer between backplane and EPD panel. The OTFT-EPD panel worked successfully anddemonstrated to display some patterns.

• Journal of the Institute of Electronics and Information Engineers
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• v.51 no.8
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• pp.156-164
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• 2014

In a delay line type of a time-to-digital converter implemented in Field Programmable Gate Array, the timing accuracy decreases for a longer carry chain. In this paper, we propose a structure that has a multi-phase clock and a state machine to check metastability; this would reduce the required length of the carry chain with the same time resolution. To reduce the errors caused by the time difference in the four delay lines associated with a four-phase clock, the proposed TDC generates a single input pulse from four phase clocks and uses a single delay line. Moreover, the state machine is designed to find the phase clock that is used to generate the single input pulse and determine the metastable state without a synchronizer. With the measurement range of 1 ms, the measured resolution was 22 ps, and the non-linearity was 25 ps.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.7
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• pp.1-8
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• 2008

We fabricated flexible electrophoretic display(EPD) driven by organic thin film transistors(OTFTs) on plastic substrate. We designed the W/L of OTFT to be 15, considering EPD's transient characteristics. The OTFTs employed bottom contact structure and used Al for gate electrode, the cross-linked polyvinylphenol for gate insulator, pentacene for active layer. The plastic substrate was coated by PVP barrier layer in order to remove the islands which were formed after pre-shrinkage process and caused the electrical short between bottom scan and top data metal lines. Pentacene active layer was confined within the gate electrodes so that the off current was controlled and reduced by gate electrodes. Especially, PVA/Acryl double layers were inserted between EPD panel and OTFT-backplane in order to protect OTFT-backplane from the damages created by lamination process of EPD panel on the backplane and also accommodate pixel electrodes through via holes. From the OTFT-backplane the mobility was $0.21cm^2/V.s$, Ion/Ioff current ratio $10^5$. The OTFT-EPD panel worked successfully and demonstrated to display some patterns.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.20-20
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• 2007

Nanowire-based field-effect transistors (FETs) decorated with nanoparticles have been greatly paid attention as nonvolatile memory devices of next generation due to their excellent transportation ability of charge carriers in the channel and outstanding capability of charge trapping in the floating gate. In this work, top-gate single ZnO nanowire-based FETs with and without Au nanoparticles were fabricated and their memory effects were characterized. Using thermal evaporation and rapid thermal annealing processes, Au nanoparticles were formed on an $Al_2O_3$ layer which was semi cylindrically coated on a single ZnO nanowire. The family of $I_{DS}-V_{GS}$ curves for the double sweep of the gate voltage at $V_{DS}$ = 1 V was obtained. The device decorated with nanoparticles shows giant hysterisis loops with ${\Delta}V_{th}$ = 2 V, indicating a significant charge storage effect. Note that the hysterisis loops are clockwise which result from the tunneling of the charge carriers from the nanowire into the nanoparticles. On the other hand, the device without nanoparticles shows a negligible countclockwise hysterisis loop which reveals that the influence of oxide trap charges or mobile ions is negligible. Therefore, the charge storage effect mainly comes from the nanoparticles decorated on the nanowire, which obviously demonstrates that the top-gate single ZnO nanowire-based FETs decorated with Au nanoparticles are the good candidate for the application in the nonvolatile memory devices of next generation.