• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.36 no.4
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• pp.385-390
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• 2023

In this paper, the 1,700 V level SiC-based power MOSFET device widely used in electric vehicles and new energy industries was designed, that is, a single trench gate power MOSFET structure and a double trench gate power MOSFET structure were proposed to analyze electrical characteristics while changing the design and process parameters. As a result of comparing and analyzing the two structures, it can be seen that the double trench gate structure shows quite excellent characteristics according to the concentration of the drift layer, and the breakdown voltage characteristics according to the depth of the drift layer also show excellent characteristics of 200 V or more. Among them, the trench gate power MOSFET device can be applied not only to the 1,700 V class but also to a voltage range above it, and it is believed that it can replace all Si devices currently applied to electric vehicles and new energy industries.

• Proceedings of the IEEK Conference
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• 2002.06b
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• pp.213-216
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• 2002

A double-heterostructure AIGaAs/GaAs PHEMT (Pseudomorphic High Electron Mobility Transistor) using digital recess has been successfully realized. Futhermore, the differences of gm,nax, fT, fmax between two samples are as low as 0.62%, 1.58% and 2.56 % respectively. Experimental results are presented demonstrating the etch rate and Process invariability with respect to hydrogen peroxide and acid exposure times with uniformity among devices on a sample.

• Proceedings of the IEEK Conference
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• 2002.06a
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• pp.89-92
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• 2002

It is important that fault management of devices which is composing network in the next-generation internet environment. It is best method of operating network safely and efficiently. In this paper, we have suggested double message broker architecture to transmit trap messages in web-based fault management system using Java technologies. The double message broker fault management system shows that manager can do its own job efficiently

• Journal of radiological science and technology
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• v.43 no.6
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• pp.489-494
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• 2020

The Law method is observing the temporal bone. There are two types of methods: the double angle method, which manipulates the center ray angle of the tube twice, and the single angle method, which manipulates once. The purpose is to increase the reproducibility of the image by making vertical incidence by making an assistive device using a 3D printer. Two assistive devices with a wedge-shaped 8.5 × 10 × 2.3 cm, an inclined surface of 7.5 cm, and an inclination angle of 15° were fabricated. Assistive devices can be combined with each other in the form of grooves, and PLA (Poly Lactic Acid) is used as a material. In the first experiment, 10 examiners operated the tube 15° in the caudad direction and 15° in the anterior direction, and measured it with a protractor to conduct a reproducibility experiment. Second, two examiners acquired vertically incidence images using the existing law method and assistive devices, and measured the distance between each measurement point to evaluate the reproducibility. The tube center ray angle reproducibility experiment was not statistically significant, but the angle difference was up to 9° between examiners. The reproducibility experiment of radiographic images was not statistically significant with the conventional method, and the method using an assistive device was statistically significant. Therefore, regardless of skill level, an image capable of securing reproducibility, which is the advantage of vertical incidence, could be obtained.

• ETRI Journal
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• v.26 no.6
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• pp.575-582
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• 2004

Fully-depleted silicon-on-insulator (FD-SOI) devices with a 15 nm SOI layer thickness and 60 nm gate lengths for analog applications have been investigated. The Si selective epitaxial growth (SEG) process was well optimized. Both the single- raised (SR) and double-raised (DR) source/drain (S/D) processes have been studied to reduce parasitic series resistance and improve device performance. For the DR S/D process, the saturation currents of both NMOS and PMOS are improved by 8 and 18%, respectively, compared with the SR S/D process. The self-heating effect is evaluated for both body contact and body floating SOI devices. The body contact transistor shows a reduced self-heating ratio, compared with the body floating transistor. The static noise margin of an SOI device with a $1.1\;{\mu}m^2$ 6T-SRAM cell is 190 mV, and the ring oscillator speed is improved by 25 % compared with bulk devices. The DR S/D process shows a higher open loop voltage gain than the SR S/D process. A 15 nm ultra-thin body (UTB) SOI device with a DR S/D process shows the same level of noise characteristics at both the body contact and body floating transistors. Also, we observed that noise characteristics of a 15 nm UTB SOI device are comparable to those of bulk Si devices.

• Journal of the Semiconductor & Display Technology
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• v.13 no.3
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• pp.51-55
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• 2014

Ni-CNT(Carbon Nanotubes) composite coating is often used for the surface treatment of mechanical/electronic devices to improve the properties of the Ni coating. For the Ni-CNT coating, the dispersion of CNT fibers is a critical process. In this study, ultrasonic treatment instead of the conventional ball milling was attempted as a dispersion method for the electroless Ni-CNT coating. SEM-EDX analysis was performed and contact angle, sheet resistance, and micro-hardness were measured. Results showed that the ultrasonic treatment was comparable to the ball milling, as a dispersion method, but the difference was negligible. However, combined ball milling and ultrasonic treatment(double treatment) showed much improved micro-hardness value, above 350Hv(close to the value obtained by the Ni-CNT electroplating). In addition, electroless Ni-CNT(double-treated) coatings formed on the thin Ni film deposited by the electroless plating(double coating) showed better mechanical properties. Thus, double treatment and double coating are suggested as an improved electroless Ni-CNT coating method.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2002.05a
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• pp.261-263
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• 2002

CMOS devices have scaled down to sub-50nm gate to achieve high performance and high integration density. Key challenges with the device scaling are non-scalable threshold voltage( $V^{th}$ ), high electric field, parasitic source/drain resistance, and $V^{th}$ variation by random dopant distribution. To solve scale-down problem of conventional structure, a new structure was proposed. In this paper, we have investigated double-gate MOSFET structure, which has the main-gate and the side-gates, to solve these problem.

• Design & Manufacturing
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• v.10 no.2
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• pp.39-43
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• 2016

Most of automobile parts manufactured through sheet metal forming are mass-produced by using press mold. In recent years, automation and speeding up of press lines have been expanding to maximize product productivity using a press die. The proportion of the moving time in the press line is high, and therefore requires high-speed and automated equipment for the moving process. In this paper, to provide the double-moving system can be the moving time reduction and increased productivity. Developed transport system consists of the material supply, the material feeding device and the PLC controller and the devices are positioned between each of the pressing process. In this paper, the double-moving system including developed units using a multi-axial single-acting through this reduced the C/T(cycle time) and improved the productivity.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.515-518
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• 2000

The electrochromic properties of $WO_{3}$/$MoO_{3}$ and $MoO_{3}$/$WO_{3}$ double-layers have been systemically studied. The double-layers were made by a e-beam evaporation method and investigated by studying optical modulation, transmittance, and cyclic voltammetry. The devices exhibit good optical properties with wavelength range of 400 to 1100 nm(visible and infrared) during coloration as a function of lithium ion charge injection. It has shown that the double-layer electrochromic thin films are improved the electrochromic properties, but the electrochemical properties are less stable.

• Journal of Power Electronics
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• v.15 no.5
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• pp.1227-1234
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• 2015

The efficient electric power demand management in electric power supply industry is currently being changed by distributed generation. Meanwhile, small-scale distributed generation systems using renewable energy are being constructed worldwide. Several small-scale renewable distributed generation systems, which can supply electricity to the grid at peak load of the grid as per policy such as demand response programs, could help in the stability of the electric power demand management. In this case, the power quality of the small-scale renewable distributed generation system is more significant. Low prices of power semiconductors and multilevel inverters with high power quality have been recently investigated. However, the conventional multilevel inverter topology is unsuitable for the small-scale renewable distributed generation system, because the number of devices of such topology increases with increasing output voltage level. In this paper, a single-phase multilevel inverter based on H-bridge, with DC_Link divided by bi-directional switches, is proposed. The proposed topology has almost half the number of devices of the conventional multilevel inverter topology when these inverters have the same output voltage level. Double Fourier series solution is mainly used when comparing PWM output harmonic components of various inverter topologies. Harmonic components of the proposed multilevel inverter, which have been analyzed by double Fourier series, are compared with those of the conventional multilevel inverter. An inverter prototype is then developed to verify the validity of the theoretical analysis.