• Convergence Security Journal
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• v.17 no.1
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• pp.53-61
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• 2017

IoT technology is evolving and related services and technologies are spreading throughout the life. These IoT technologies make life easier for users, but they also have big threats like double-edged swords. Therefore, the importance of security is emerging and related researches are actively proceeding. Existing researches have focused on reducing the computational load on the constrained devices, performing the DTLS for the end-to-end security from a network architecture perspective. In this paper, we propose a DTLS protocol that uses ECQV certificate instead of existing X.509 certificate to reduce the load of DTLS protocol from the network perspective. In addition, the proposed scheme is implemented and compared with PSK and RPK modes.

• Journal of the Korean Institute of Telematics and Electronics
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• v.22 no.3
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• pp.68-76
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• 1985

A charge-coupled device (CCD) area image sensor has been demonstrated with an experi-mental 16$\times$16 prototype. The prototype is a vertical frame transfer charge.coupled imager using two-phase gate electrode structures. In this device, ion-implanted barriers are used for two -phase CCD, and NMOS process has been adopted. The total imaging setup consisting of optical lens, clock generators, clock drivels, staircase signal generators, and oscilloscope is easily achieved with the aid of PROM . English alphabets are displayed on the oscilloscope screen using the total imaging set-up. We measure charge transfer inefficiency and dark current for the fabricated devices.

• Korean Journal of Air-Conditioning and Refrigeration Engineering
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• v.17 no.4
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• pp.325-332
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• 2005

This paper addresses the development of a scroll expander for power generation from relatively low temperature steam source. It has a double-sided orbiting scroll member so that no thrust bearing is needed to support the base plate of the orbiting scroll. Three power transmission shafts are placed at the periphery of the orbiting scroll base plate, and these shafts can also function as anti-rotation devices. Final output is obtained from the main central shaft engaged with the three power transmission shafts through gear assembly. The clearance between the fixed and orbiting scroll elements was estimated by comparing measurement of the mass flow rate with calculation results of a computer simulation. Due to large clearance, the expander total and volumetric efficiencies were measured to be $34\%\;and\;43\%$, respectively. It has been shown through the computer simulation that the total and volumetric efficiencies could be improved to $65\%\;and\;83\%$, respectively, if the current clearance is reduced by half.

• JSTS:Journal of Semiconductor Technology and Science
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• v.2 no.1
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• pp.30-40
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• 2002

A 2.45GHz double-balanced modified Gilbert-type CMOS up-conversion mixer design is introduced, where the PMOS current-reuse bleeding technique is demonstrated to be efficient in improving conversion gain, linearity, and noise performance. An LO buffer is included in the mixer design to perform single-ended to differential conversion of the LO signal on chip. Simulation results of the design based on careful modeling of all active and passive components are examined to explain in detail about the characteristic improvement and degradation provided by the proposed design. Two kinds of chips were fabricated using a standard $0.35\mu\textrm$ CMOS process, one of which is the mixer chip without the LO buffer and the other is the one with it. The measured characteristics of the fabricated chips are quite excellent in terms of conversion gain, linearity, and noise, and they are in close match to the simulation results, which demonstrates the adequacy of the modeling approach based on the macro models for all the active and passive devices used in the design. Above all the benefits provided by the current-reuse bleeding technique, the improvement in noise performance seems most valuable.

• ETRI Journal
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• v.13 no.4
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• pp.70-79
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• 1991

$In_1-x$$GA_X$$As_y$$P_1-y$ has a very wide range of applications in optoelectronic devices especially for optical communications because $In_1-x$$GA_X$$As_y$$P_1-y$ has the bandgap of the lowest dispersion ($1.3\mum$) and the lowest loss ( $1.55\mum$) of the optical fiber by changing the composition. The quality of $In_1-x$$GA_X$$As_y$$P_1-y$ epitaxial layer is believed to have a significant effect on the performance of device. The OMVPE growth conditions for the latticematched $In_1x$$GA_X$$As_y$$P_1-y$/InP were investigated. Effects of growth conditions such as V/III ratio, growth temperature, and Ga source material on the electrical and optical properties were studied. The composition, electrical and optical properities of $In_1-x$$GA_X$$As_y$$P_1-y$ were characterized using double crystal X-ray diffractometer (DCD), photoluminescence (PL), XPS(ESCA) and Hall measurement.

• Journal of Institute of Control, Robotics and Systems
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• v.22 no.4
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• pp.307-314
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• 2016

Recently, demands on the tapping machine are increased due to the case of a cell phone is changed to metal such as aluminum. The automatic tool changer (ATC) is one of the most important devices for the tapping machine related to the speed and energy consumption of the machine. To reduce the consumed energy and vibration, the dynamic modeling is essential for the ATC. In this paper, inverse dynamic modeling of a novel ATC mechanism is introduced. The proposed ATC mechanism is composed of a double four-bar mechanism with a circular tablet to generate continuous rotation of the tablet. The dynamic modeling is performed based on the Lagrange equation with a modeling for the contact between the four-bar and the tablet. Simulation results for various working conditions are proposed and analyzed for the prototype design. The dynamic modeling can be applied to determine the proper actuator and to reduce the vibration and consumed energy for the ATC machine.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.37 no.4
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• pp.205-213
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• 1988

It has been very difficult to solve the semiconductor problems by numerical analysis techique due to the strong nonlinearity of the governing equations. Thus, we proposed a double structured adaptive refinement scheme to the finite element analysis of semiconductor devices, which guarantees a succesive convergency and gives better quality to the solutions.i.e., in the first step, the main factor of divergence in the current continuity equation is eliminated and the next, the solution quality is improved by reducing the discontinuity of current. The result of test application to the GaAs MESFET model shows that the proposed method is much dffective and efficient in the numerical analysis of semiconductor.

• Proceedings of the KIPE Conference
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• 2007.07a
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• pp.98-100
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• 2007

This paper proposes a robust digital controller for PWM voltage source inverter using CRA method. The usual inverter controller for the operation of constant voltage and constant frequency consists of a double looped PI controller for the outer voltage controller and the inner current controller, of which the order of characteristic polynomial is high and so the gain tuning is difficult. Considering the limited switching frequency of the devices and sampling frequency of the digital controller, the gain tuning is usually based on the engineering experiences with the try and error method. In this paper, the error-space approach is used to get the system model including the controller with low order, and the characteristic ratio assignment (CRA) method is proposed for the design of robust controller which has the advantage to design the optimal gain to meet the referenced response and overshoot within the limit range. The PSiM simulation and experience results are shown to verify the validity of the proposed controller.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.56-59
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• 1997

SAW filters of transversal type were fabricated on some piezoelectric substrates of the LN 128$^{\circ}$ Y-X, LN 64$^{\circ}$Y-X, Quartz ST-cut wafers through the simulation in which the number o: IDT and window function were changed for the required frequency, and the mask making. Their IDT spacing and width were 3 ${\mu}{\textrm}{m}$, chip size was 4.462 $\times$ 2.086 mm$^2$, and they had double electrode transversal type IDTs. In addition to pure Al electrode devices, Ti thin films having the different thicknesses was introduced between the Al electrode and the substrate for improving the power resistance strength. They had 11-12 dB insertion losses similar to those of pure Al electrode SAW filters in case of LN 128$^{\circ}$ Y-X, LN 64$^{\circ}$ Y-X, meaning that Ti thin film was not detrimental to the insertion loss and general frequency properties. The filters had the center frequencies 162MHz for LN 128$^{\circ}$ Y-X, 186MHz for 64$^{\circ}$ Y-X, and 131MHz for Quartz ST-cut substrates.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2010.05a
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• pp.765-767
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• 2010

In this paper, the variations of threshold voltage characteristics for ratio of channel length and thickness have been alanyzed for DG(Double Gate)MOSFET having top gate and bottom gate. Since the DGMOSFET has two gates, it has advantages that contollability of gate for current is nearly twice and SCE(Short Channel Effects) shrinks in nano devices. The channel length and thickness in MOSFET determines device size and extensively influences on SCEs. The threshold voltage roll-off, one of the SCEs, is large with decreasing channel length. The threshold voltage roll-off has been analyzed with various ratio of channel length and thickness for DGMOSFET in this study.