• 제목/요약/키워드: Double bottom

검색결과 284건 처리시간 0.031초

비대칭 이중게이트 MOSFET의 도핑농도에 대한 문턱전압이동 (Channel Doping Concentration Dependent Threshold Voltage Movement of Asymmetric Double Gate MOSFET)

  • 정학기
    • 한국정보통신학회논문지
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    • 제18권9호
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    • pp.2183-2188
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    • 2014
  • 본 연구에서는 비대칭 이중게이트(double gate; DG) MOSFET의 채널 도핑농도 변화에 따른 문턱전압이동 현상에 대하여 분석하였다. 비대칭 DGMOSFET는 일반적으로 저 농도로 채널을 도핑하여 완전결핍상태로 동작하도록 제작한다. 불순물산란의 감소에 의한 고속 동작이 가능하므로 고주파소자에 응용할 수 있다는 장점이 있다. 미세소자에서 필연적으로 발생하고 있는 단채널 효과 중 문턱전압이동현상이 비대칭 DGMOSFET의 채널도핑농도의 변화에 따라 관찰하고자 한다. 문턱전압을 구하기 위하여 해석학적 전위분포를 포아송방정식으로부터 급수형태로 유도하였다. 채널길이와 두께, 산화막 두께 및 도핑분포함수의 변화 등을 파라미터로 하여 도핑농도에 따라 문턱전압의 이동현상을 관찰하였다. 결과적으로 도핑농도가 증가하면 문턱전압이 증가하였으며 채널길이가 감소하면 문턱전압이 크게 감소하였다. 또한 채널두께와 하단게이트 전압이 감소하면 문턱전압이 크게 증가하는 것을 알 수 있었다. 마지막으로 산화막 두께가 감소하면 문턱전압이 증가하는 것을 알 수 있었다.

직접 용액 코팅법에 의해 제조한 CuInSe2 에 잔존하는 탄소 불순물층 형성에 관한 연구 (On Formation of Residual Carbon Layer in CuInSe2 Thin Films Formed via direct Solution Coating Process)

  • 안세진;;어영주;곽지혜;윤경훈;조아라
    • Current Photovoltaic Research
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    • 제2권1호
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    • pp.36-39
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    • 2014
  • Formation mechanism of residual carbon layer, frequently observed in the $CuInSe_2$ (CIS) thin film prepared by direct solution coating routes, was investigated in order to find a way to eliminate it. As a model system, a methanol solution with dissolved Cu and In salts, whose viscosity was adjusted by adding ethylcellulose (EC), was chosen. It was found that a double layer, a top metal ion-derived film and bottom EC-derived layer, formed during an air drying step presumably due to different solubility between metal salts and EC in methanol. Consequently, the top metal ion-derived film acts as a barrier layer inhibiting further thermal decomposition of underlying EC, resulting a formation of bottom carbon residue layer.

이중화된 패턴을 참조하는 평면 변위 측정 방법 (Measuring Method of Planar Displacement Referring to The Double Linear Patterns)

  • 박성준;정광석
    • 한국산학기술학회논문지
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    • 제16권7호
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    • pp.4405-4410
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    • 2015
  • 두 개의 1차원 주기 패턴을 수직으로 중첩시켜 상하층 패턴으로부터 이축 변위 정보를 각각 디코딩할 수 있는 방법을 제안한다. 투명한 상층 패턴 판별은 굴절률차에 기인한 레이저 빔의 디플렉션 검출을 통해 이뤄지고 하층 패턴 판별은 수광 전압 차의 검출를 통해 이뤄진다. 빌드 업 필름 재질의 상층 패턴은 UV 레이저 가공에 의해 미세가공되고 그리고 알루미늄 하층 패턴은 초정밀 머시닝에 의한 트렌치 가공과 불투명 소재 증착 그리고 폴리싱 과정을 통해 제작된다. 10마이크로미터 간격으로 제작된 샘플 패턴과 이를 인코딩할 수 있는 전용 광학계에 의한 변위 측정 방법은 대면적 스테이지에 장착되어 레이저 간섭계를 이용한 측정데이터와 비교하여 검증된다.

The effect of 3-mercapto-5-nitro-benzimidazole (MNB) and poly (methyl methacrylate) (PMMA) treatment sequence organic thin film transistor

  • Park, Jin-Seong;Suh, Min-Chul;Jeong, Jong-Han;Kim, Su-Young;Mo, Yeon-Gon
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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    • pp.1174-1177
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    • 2006
  • A bottom contact organic thin film transistor (OTFT) is fabricated with an organic double-layered gate insulator (GI) and pentacene. The PMMA and MNB layers are treated on gate insulator and source/drain (S/D, Au) before depositing pentacene to investigate device properties and pentacene growth. The sequence of surface treatment affects a device performance seriously. The ultra-thin PMMA (below 50A) was deposited on organic gate insulator and S/D metal by spin coating method, which showed no deterioration of on-state current (Ion) although bottom contact structure was exploited. We proposed that the reason of no contact resistance (Rc) increase may be due to a wettability difference in between PMMA / Au and PMMA / organic GI. As a result, the device treated by $PMMA\;{\rightarrow}\;MNB$ showed much better Ion behavior than those fabricated by $MNB\;{\rightarrow}\;PMMA$. We will report the important physical and electrical performance difference associated with surface treatment sequence.

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BCB를 이용한 High & Low$Z_0$전송선로 제작에 대한 연구 (Studies on the fabrication of transmission line with high and low $Z_0$ using BCB layer)

  • 한효종;이성대;전영훈;윤관기;김삼동;황인석;이진구;류기현
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2002년도 하계종합학술대회 논문집(2)
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    • pp.57-60
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    • 2002
  • In this paper, transmission lines with low and high characteristic impedance (Z$_{0}$) are fabricated and analyzed. The transmission lines are fabricated on the benzo-cyclo-butene (BCB) films of a low dielectric constant. For the low Z$_{0}$, two types of coplanar waveguide (CPW) structures are fabricated, which include bottom-ground and double-ground type. Measurement shows that Z$_{0}$ values for each CPW type are 7.3 and 9.4$\Omega$, respectively, at a signal line width of 100 #m. Whit the ratio between the spacing of bottom-ground and the signal line with becomes greater than 2.5, the Z$_{0}$ is nearly saturated. In addition, thin film microstrip lines fabricated using the BCB insertion layers show very low Z$_{0}$ of 25.5$\Omega$, and this impedance is ~64 % of the values obtained from the BCB-based CPW structures of the same line width. Measurement result of CPW on BCB layer is 100.5 Ω.s 100.5 Ω.

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과잉 Ti 성분의 티탄산 바륨과 실리콘 산화막으로 구성된 안티퓨즈 (Antifuse with Ti-rich barium titanate film and silicon oxide film)

  • 이재성;이용현
    • 전자공학회논문지D
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    • 제35D권7호
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    • pp.72-78
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    • 1998
  • This paper is focused on the fabrication of reliable novel antifuse, which could operate at low voltage along with the improvement in OFF and ON-state properties. The fabricated antifuse consists of Al/BaTi$_{2}$O$_{3}$/SiO$_{2}$/TiW-silicide structure. Through the systematic analyses for bottom metal and the intermetallic insulator, material and electri cproperties were investiaged. TiW-silicide as the bottom electrode had smooth surface with average roughness of 11.angs. at 10X10.mu.m$^{2}$ and was bing kept as-deposited SiO$_{2}$ film stable. Amorphous BaTi$_{2}$O$_{3}$ film as the another insulator was chosen because of its low breakdown strength (2.5MV/cm). breakdown voltage of antifuse is remarkably reduced by using BaTi$_{2}$O$_{3}$ film, and leakage current of that maintained low level due to the SiO$_{2}$ film. Low ON-resistance (46.ohm./.mu.m$^{2}$) and low programming voltage(9.1V) can be obtained in theses antifuses with 220.angs. double insulator layer and 19.6X10$^{-6}$ cm$^{2}$ area, while keeping sufficient OFF-state reliability (less than 1nA).

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An optimum design study of interlacing nozzle by using Computational Fluid Dynamics

  • Juraeva Makhsuda;Ryu Kyung-Jin;Kim Sang-Dug;Song Dong-Joo
    • 한국전산유체공학회:학술대회논문집
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    • 한국전산유체공학회 2006년도 PARALLEL CFD 2006
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    • pp.395-397
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    • 2006
  • Air interlacing serves to protect the yarn against damage, strengthens inter-filament compactness or cohesion, and ensures fabric consistency. The air interlacing nozzle is used to introduce intermittent nips to a filament yarn so as to improve its performance in textile processing. The effect of various interlacing nozzle geometries on the interlacing process was studied. The geometries of interlacing nozzles with single or multiple air inlets located across the width of yarn channels are investigated. The basis case is the yarn channel, with a perpendicular main air inlet in the middle. Other cases have main air inlets, slightly inclined double sub air inlets, The yarn channel cross sectional shapes are either semicircular or rectangular shapes. The compressed impinging jet from the main air inlet hole hits the opposing bottom wall of the yarn channel, is divided into two branches, joins with the compressed air coming out from sub air inlet at the bottom and creates two free jets at both ends of the yarn channel. The compressed air movement in the cross-section consists of two opposing directional vortices. The CFD-FASTRAN flow parallel solver was used to perform steady simulations of impinging jet flow inside of the interlace nozzles. The vortical structure and the flow pattern such as pressure contour, particle traces, velocity vector plots inside of interlace nozzle geometry are discussed in this pater.

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Highly Sensitive and Transparent Touch Sensor by a Double Structure of Single Layer Graphene

  • Kim, Youngjun;Jung, Hyojin;Jin, Hyungki;Chun, Sungwoo;Park, Wanjun
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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    • pp.228.2-228.2
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    • 2014
  • Characteristics of high Fermi velocity, high mechanical strength, and transparency offer tremendous advantages for using graphene as a promising transparent conducting material [1] in electronic devices. Although graphene is a prospective candidate for touch sensor with strong mechanical properties [2] and flexibility, only few investigations have been carried out in the field of sensor as a device form. In this study, we suggest ultra-highly sensitive and transparent graphene touch sensor fabricated by single layer graphenes. One of the graphene layers is formed in the top panel as a disconnected graphene beam transferred on PDMS, and the other of the graphene layer is formed with line-patterning on the bottom panel of triple structure PET/PI/SiO2. The touch sensor shows characteristics of flexible. Its transmittance is approximately 75% where transmittance of the top panel and the bottom panel are 86.3% and 87%, respectively, at 550 nm wavelength. Sheet resistance of each graphene layer is estimated as low as $971{\Omega}/sq$. The results show that the conductance change rate (${\Delta}C/C0$) is $8{\times}105$ which depicts ultra-high sensitivity. Moreover, reliability characteristic confirms consistent behavior up to a 100-cycle test.

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대한제국기 프록코트의 형태와 제작법에 관한 연구 - 박기종 유물 조사를 중심으로 - (A study of the shape and tailoring of frock coats in the Korean Empire - Park Ki-Jong's frock coat -)

  • 최은주
    • 복식문화연구
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    • 제23권3호
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    • pp.439-453
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    • 2015
  • This research is regarding Park Ki-Jong's Western-style court costume and emphasizes the shape and style peculiarities of Western-style court costumes in the Korean Empire from the 1876 Port Opening to the 1910 annexation of Korean to Japan. Park Ki-Jong's frock coat was made during the period of the established law from 1900 to 1910. 1) The brand was ASADA TAILOR from Kyung-Sung. 2) The shape was long at the front and back, and it featured a picked lapel and double breast with six buttons to fasten and two buttons for decoration on the upper part. 3) The frock coat's materials were black wool fabric and black ridged silk. The lining's material was black plain silk and the sleeve's lining was white with blue striped silk. 4) The front separated the upper and bottom parts. The bottom was composed of a one-piece A-line skirt that continued from the front to back. The top of the back was separated by the princess line and the center-back seam was also separated with a vent. However, the center-back of the waistline was not separated, and it continued to one piece. The sleeve shape was a two-piece sleeve style with a phony vent and two wrapping buttons.

패널법을 이용한 유한수심에서의 조파저항 계산 (Computation of Wave Resistance in the Water of Finite Depth Using a Panel Method)

  • 이승준
    • 대한조선학회논문집
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    • 제29권4호
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    • pp.66-74
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    • 1992
  • 유한수심의 해역에서 운동하는 잠수체 혹은 부유체의 조파저항을 계산하기 위하여 Hess & Smith(1962)와 Dawson(1977)류의 패널법을 개발하였다. 수면상에서의 경계조건은 소위 Poisson 식을 사용하였는데, 비슷한 문제에 대해 Yasukawa(1989)는 이중물체유동을 기본유동으로 하는 Damson식을 사용한 바 있다. 수저면에서의 경계조건을 자동적으로 만족시키기 위하여 Rankine 쏘오스와 수저면에 대한 경상 쏘오스의 합을 Green 함수로 취하였으며, 따라서 특이점은 선체와 자유표면 상에만 분포시키면 되므로 필요한 패널의 수는 Yasukawa의 방법에 비해 절반이하로 감소되었다. 계산예로서는 잠수한 구와 Wigley선형을 택하였으며, 기존의 해석해 및 수치해와 비교하여 잘 일치하는 결과를 얻었다.

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