• Journal of Advanced Marine Engineering and Technology
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• v.20 no.3
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• pp.91-100
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• 1996

Experimental results for forced convection condensation of non-azeotropic refrigerant mixtures inside a horizontal smooth tube are presented. The mixtures of R-22+R-134a and pure refrigerants R-22 and R-134a are used as the test fluids and a double pipe heat exchanger of 7.5mm ID and 4800mm long inside tube is used. The range of parameters are 100-300kg/h of mass flow rate, 0-1.0 of quality, and 0, 33, 50, 67, and 100 weight percent of R-22 mass fraction in the mixtures. The heat flux, vapor pressure, vapor temperature and tube wall temperature were measured. Using the data, the local and average heat transfer coefficients for the condensation have been obtained. In the same given experimental conditions, the liquid heat transfer coefficients for NARMs were considerally lower than that of the pure refrigerant of R-22 and R-134a. Local heat transfer characteristics for NARMs were different from pure refrigerant R-22 and R-134a. In some regions, local heat transfer coefficients for NARMs were increased in the following order ; Bottom$\rightarrow$Top$\rightarrow$Side. The condensation heat transfer coefficients for NARMs increased with mass velocity, heat flux, and quality, but were considerably lower than that of pure refigerant R-22 and R-134a.

• Journal of Korean Society on Water Environment
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• v.35 no.2
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• pp.115-122
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• 2019

The objective of this study was to investigate the sonophysical and sonochemical effects induced by acoustic cavitation in heterogeneous systemin a 28 kHz double-bath reactor using calorimetry, the aluminiumfoil erosion test, and the luminol test. With no glass beads, calorimetric power in the inner vessel increased as much as the outer sonoreactor lost and total calorimetric power was maintained for various liquid height conditions (0.5 ~ 7 cm) in the vessel. Higher calorimetric energy was obtained at higher liquid height conditions. Similar results were obtained when glass beads were placed with various beads heights (0.5 ~ 2.0 cm) and relatively high calorimetric energy was obtained in spite of large attenuation in the glass beads layer. An aluminium foil placed between the bottom of the inner vessel and the glass beads layer was damaged, indicating significant sonophysical effects. Much less damage was detected when the foil was placed above the beads layer due to large attenuation of ultrasound. Sonochemical effects, visualized by sonochemiluminescence (SCL), also decreased significantly when the beads were placed in the vessel. It was established that the optimization of the liquid height above the solid-material layer could enhance the sonophysical and sonochemical effects in the double-bath sonoreactors.

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.18 no.4
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• pp.436-441
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• 2009

An air filter is a device to remove dust from the air supplied to the automotive engine. A requirement for the optimum air filter is to improve the capability to remove particles from the air it takes in, that is the efficiency and amount of dust collection. By removing dust from the air, the air filter prevents the engine cylinder from wear, reduces ventilation resistance, and thus improves engine output and guarantees intake performance. In order to guarantee such air filter performance, it is very important to properly seal the air filter. For passenger cars made in Korea, the air filters are fabricated with steel caps as their frames are large and their engine capacity is big. Recently however, European countries and Japan started using urethane for manufacturing the air filter, so that all foreign-made cars now have urethane filters. The urethanes used for air filters are applied in two ways: One is to use soft urethane for both top and bottom of the air filter and the other is to use soft urethane for the top and hard urethane for the bottom. Each of these method has unique problems. In this study, hard urethane is used for both top and bottom of the filter in order to improve those problems and increase the sealing efficiency. Especially for the top, NBR (rubber mold) is pre-settled in tough urethane and then the urethane is solidified through foaming, which makes it possible to develop a solid and double-sealed filter.

• Journal of Industrial and Engineering Chemistry
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• v.67
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• pp.358-364
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• 2018

An isotropic pitch precursor for fabricating carbon fibres was prepared by co-carbonization of ethylene bottom oil(EBO) and polyvinyl chloride (PVC). Various pre-treatments of EBO and PVC, and a high heating rate of $3^{\circ}C/min$ with no holding time, were evaluated for their effects on the oxidative stabilization process and the mechanical stability of the resulting fibres. Our stabilization process enhanced the volatilization, oxidative reaction and decomposition properties of the precursor pitch, while the addition of PVC both decreased the onset time and accelerated the oxidative reaction. Aliphatic carbon groups played a critical role in stabilization. Microstructural characterization indicated that these were first oxidised to carbon-oxygen single bonds and then converted to carbon-oxygen double bonds. Due to the higher heating rate and lack of a holding step during processing,the resulting thermoplastic fibers did not completely convert to thermoset materials, allowing partially melted, adjacent fibres to fuse. Fiber surfaces were smooth and homogeneous. Of the various methods evaluated herein, carbon fibers derived from pressure-treated EBO and PVC exhibited the highest tensile strength. This work shows that enhancing the naphthenic component of a pitch precursor through the co-carbonization of pre-treated EBO with PVC improves the oxidative properties of the resulting carbon fibers.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.4
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• pp.599-604
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• 1998

We have investigated Pt and $RuO_2$ as a bottom electrode for ferroelectric capacitor applications. The bottom electrodes were prepared by using an RF magnetron sputtering method. Some of the investigated parameters were a substrate temperature, gas flow rate, RF power for the film growth, and post annealing effect. The substrate temperature strongly influenced the surface morphology and resistivity of the bottom electrodes as well as the film crystallographic structure. XRD results on Pt films showed a mixed phase of (111) and (200) peak for the substrate temperature ranged from RT to $200^{\circ}C$, and a preferred (111) orientation for $300^{\circ}C$. From the XRD and AFM results, we recommend the substrate temperature of $300^{\circ}C$ and RF power 80W for the Pt bottom electrode growth. With the variation of an oxygen partial pressure from 0 to 50%, we learned that only Ru metal was grown with 0~5% of $O_2$ gas, mixed phase of Ru and $RuO_2$ for $O_ 2$ partial pressure between 10~40%, and a pure $RuO_2$ phase with $O_2$ partial pressure of 50%. This result indicates that a double layer of $RuO_2/Ru$ can be grown in a process with the modulation of gas flow rate. Double layer structure is expected to reduce the fatigue problem while keeping a low electrical resistivity. As post anneal temperature was increased from RT to $700^{\circ}C$, the resistivity of Pt and $RuO_2$ was decreased linearly. This paper presents the optimized process conditions of the bottom electrodes for memory device applications.

• Journal of the Korean Society of Fisheries and Ocean Technology
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• v.32 no.1
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• pp.33-41
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• 1996

In order to obtain the most favourable classification system for fishing gears, the problems in the existing systems were investigated and a new system in which the fishing method was adopted as the criterion of classification and the kinds of fishing gears were obtained by exchanging the word method into gear in the fishing methods classified newly for eliminating the problems was established. The new system to which the actual gears are arranged is as follows ; (1)Harvesting gear \circled1Plucking gears : Clamp, Tong, Wrench, etc. \circled2Sweeping gears : Push net, Coral sweep net, etc. \circled3Dredging gears : Hand dredge net, Boat dredge net, etc. (2)Sticking gears \circled1Shot sticking gears : Spear, Sharp plummet, Harpoon, etc. \circled2Pulled sticking gears : Gaff, Comb, Rake, Hook harrow, Jerking hook, etc. \circled3Left sticking gears : Rip - hook set line. (3)Angling gears \circled1Jerky angling gears (a)Single - jerky angling gears : Hand line, Pole line, etc. (b)Multiple - jerky angling gears : squid hook. \circled2Idly angling gears (a)Set angling gears : Set long line. (b)Drifted angling gears : Drift long line, Drift vertical line, etc. \circled3Dragged angling gears : Troll line. (4)Shelter gears : Eel tube, Webfoot - octopus pot, Octopus pot, etc. (5)Attracting gears : Fishing basket. (6)Cutoff gears : Wall, Screen net, Window net, etc. (7)Guiding gears \circled1Horizontally guiding gears : Triangular set net, Elliptic set net, Rectangular set net, Fish weir, etc. \circled2Vertically guiding gears : Pound net. \circled3Deeply guiding gears : Funnel net. (8)Receiving gears \circled1Jumping - fish receiving gears : Fish - receiving scoop net, Fish - receiving raft, etc. \circled2Drifting - fish receiving gears (a)Set drifting - fish receiving gears : Bamboo screen, Pillar stow net, Long stow net, etc. (b)Movable drifting - fish receiving gears : Stow net. (9)Bagging gears \circled1Drag - bagging gears (a)Bottom - drag bagging gears : Bottom otter trawl, Bottom beam trawl, Bottom pair trawl, etc. (b)Midwater - drag gagging gears : Midwater otter trawl, Midwater pair trawl, etc. (c)Surface - drag gagging gears : Anchovy drag net. \circled2Seine - bagging gears (a)Beach - seine bagging gears : Skimming scoop net, Beach seine, etc. (b)Boat - seine bagging gears : Boat seine, Danish seine, etc. \circled3Drive - bagging gears : Drive - in dustpan net, Inner drive - in net, etc. (10)Surrounding gears \circled1Incomplete surrounding gears : Lampara net, Ring net, etc. \circled2Complete surrounding gears : Purse seine, Round haul net, etc. (11)Covering gears \circled1Drop - type covering gears : Wooden cover, Lantern net, etc. \circled2Spread - type covering gears : Cast net. (12)Lifting gears \circled1Wait - lifting gears : Scoop net, Scrape net, etc. \circled2Gatherable lifting gears : Saury lift net, Anchovy lift net, etc. (13)Adherent gears \circled1Gilling gears (a)Set gilling gears : Bottom gill net, Floating gill net. (b)Drifted gilling gears : Drift gill net. (c)Encircled gilling gears : Encircled gill net. (d)Seine - gilling gears : Seining gill net. (e)Dragged gilling gears : Dragged gill net. \circled2Tangling gears (a)Set tangling gears : Double trammel net, Triple trammel net, etc. (b)Encircled tangling gears : Encircled tangle net. (c)Dragged tangling gears : Dragged tangle net. \circled3Restrainting gears (a)Drifted restrainting gears : Pocket net(Gen - type net). (b)Dragged restrainting gears : Dragged pocket net. (14)Sucking gears : Fish pumps.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.340-341
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• 2012

In this work, we investigated the effects of temperature stress on flatband voltage (VFB) shifts of HfO2-SiO2 double gate dielectrics devices. Fig. 1 shows a high frequency C-V of the device when a positive bias for 10 min and a subsequent negative bias for 10 min were applied at room temperature (300 K). Fig. 2 shows the corresponding plot when the same positive and negative biases were applied at a higher temperature (473.15 K). These measurements are based on the BTS (bias temperature stress) about mobile charge in the gate oxides. These results indicate that the positive bias stress makes no difference, whereas the negative bias stress produces a significant difference; that is, the VFB value increased from ${\Delta}0.51$ V (300 K, Fig. 1) to ${\Delta}14.45$ V (473.15 K, Fig. 2). To explain these differences, we propose a mechanism on the basis of oxygen vacancy in HfO2. It is well-known that the oxygen vacancy in the p-type MOS-Cap is located within 1 eV below the bottom of the HfO2 conduction band (Fig. 3). In addition, this oxygen vacancy can easily trap the electron. When heated at 473.15 K, the electron is excited to a higher energy level from the original level (Fig. 4). As a result, the electron has sufficient energy to readily cross over the oxide barrier. The probability of trap about oxygen vacancy becomes very higher at 473.15 K, and therefore the VFB shift value becomes considerably larger.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.278-278
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• 2016

Solution-processed metal-oxide semiconductors have been considered as the next generation semiconducting materials for transparent and flexible electronics due to their high electrical performance. Moreover, since the oxide semiconductors show high sensitivity to light illumination and possess persistent photoconductivity (PPC), these properties can be utilized in realizing optical memory devices, which can transport information much faster than the electrons. In previous works, metal-oxide semiconductors are utilized as a memory device by using the light (i.e. illumination does the "writing", no-gate bias recovery the "reading" operations) [1]. The key issues for realizing the optical memory devices is to have high photoconductivity and a long life time of free electrons in the oxide semiconductors. However, mono-layered indium-zinc-oxide (IZO) and mono-layered indium-gallium-zinc-oxide (IGZO) have limited photoconductivity and relaxation time of 570 nA, 122 sec, 190 nA and 53 sec, respectively. Here, we boosted up the photoconductivity and relaxation time using a double-layered IZO/IGZO active layer structure. Solution-processed IZO (top) and IGZO (bottom) layers are prepared on a Si/SiO2 wafer and we utilized the conventional thermal annealing method. To investigate the photoconductivity and relaxation time, we exposed 9 mW/cm2 intensity light for 30 sec and the decaying behaviors were evaluated. It was found that the double-layered IZO/IGZO showed high photoconductivity and relaxation time of 28 uA and 1048 sec.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.3
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• pp.651-656
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• 2014

This paper analyzed the change of subthreshold swing for channel doping of asymmetric double gate(DG) MOSFET. The subthreshold swing is the factor to describe the decreasing rate of off current in the subthreshold region, and plays a very important role in application of digital circuits. Poisson's equation was used to analyze the subthreshold swing for asymmetric DGMOSFET. Asymmetric DGMOSFET could be fabricated with the different top and bottom gate oxide thickness and bias voltage unlike symmetric DGMOSFET. It is investigated in this paper how the doping in channel, gate oxide thickness and gate bias voltages for asymmetric DGMOSFET influenced on subthreshold swing. Gaussian function had been used as doping distribution in solving the Poisson's equation, and the change of subthreshold swing was observed for projected range and standard projected deviation used as parameters of Gaussian distribution. Resultly, the subthreshold swing was greatly changed for doping concentration and profiles, and gate oxide thickness and bias voltage had a big impact on subthreshold swing.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.21 no.8
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• pp.1465-1470
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• 2017

In conventional MOSFETs, the silicon thickness is always larger than inversion layer, so that the drain induced barrier lowering (DIBL) is expressed as a function of oxide thickness and channel length regardless of silicon thickness. However, since the silicon thickness is fully depleted in the sub-10 nm low doped double gate (DG) MOSFET, the conventional SPICE model for DIBL is no longer available. Therefore, we propose a novel DIBL SPICE model for DGMOSFETs. In order to analyze this, a thermionic emission and the tunneling current was obtained by the potential and WKB approximation. As a result, it was found that the DIBL was proportional to the sum of the top and bottom oxide thicknesses and the square of the silicon thickness, and inversely proportional to the third power of the channel length. Particularly, static feedback coefficient of SPICE parameter can be used between 1 and 2 as a reasonable parameter.