• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.9
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• pp.2183-2188
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• 2014

This paper has analyzed threshold voltage movement for channel doping concentration of asymmetric double gate(DG) MOSFET. The asymmetric DGMOSFET is generally fabricated with low doping channel and fully depleted under operation. Since impurity scattering is lessened, asymmetric DGMOSFET has the adventage that high speed operation is possible. The threshold voltage movement, one of short channel effects necessarily occurred in fine devices, is investigated for the change of channel doping concentration in asymmetric DGMOSFET. The analytical potential distribution of series form is derived from Possion's equation to obtain threshold voltage. The movement of threshold voltage is investigated for channel doping concentration with parameters of channel length, channel thickness, oxide thickness, and doping profiles. As a result, threshold voltage increases with increase of doping concentration, and that decreases with decrease of channel length. Threshold voltage increases with decrease of channel thickness and bottom gate voltage. Lastly threshold voltage increases with decrease of oxide thickness.

• Current Photovoltaic Research
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• v.2 no.1
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• pp.36-39
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• 2014

Formation mechanism of residual carbon layer, frequently observed in the $CuInSe_2$ (CIS) thin film prepared by direct solution coating routes, was investigated in order to find a way to eliminate it. As a model system, a methanol solution with dissolved Cu and In salts, whose viscosity was adjusted by adding ethylcellulose (EC), was chosen. It was found that a double layer, a top metal ion-derived film and bottom EC-derived layer, formed during an air drying step presumably due to different solubility between metal salts and EC in methanol. Consequently, the top metal ion-derived film acts as a barrier layer inhibiting further thermal decomposition of underlying EC, resulting a formation of bottom carbon residue layer.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.16 no.7
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• pp.4405-4410
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• 2015

Two-dimensional displacements are obtained from the sandwiched patterns, which superpose two linearly-periodic patterns orthogonally, respectively. The transparent top pattern is identified by deflection of the laser beam due to a difference of refractivity and the opaque bottom pattern is identified by deviation of the beam intensity due to a difference of reflectance. In the sample setup, the top pattern made up of build-up film is manufactured by UV laser machining and the bottom pattern is manufactured by ultra-precision trench machining and deposition for aluminum plate. The proposed decoding method is verified experimentally using the $10{\mu}m$ equally spaced sample patterns and the devised optical system. The Korea Academia-Industrial cooperation Society.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1174-1177
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• 2006

A bottom contact organic thin film transistor (OTFT) is fabricated with an organic double-layered gate insulator (GI) and pentacene. The PMMA and MNB layers are treated on gate insulator and source/drain (S/D, Au) before depositing pentacene to investigate device properties and pentacene growth. The sequence of surface treatment affects a device performance seriously. The ultra-thin PMMA (below 50A) was deposited on organic gate insulator and S/D metal by spin coating method, which showed no deterioration of on-state current (Ion) although bottom contact structure was exploited. We proposed that the reason of no contact resistance (Rc) increase may be due to a wettability difference in between PMMA / Au and PMMA / organic GI. As a result, the device treated by $PMMA\;{\rightarrow}\;MNB$ showed much better Ion behavior than those fabricated by $MNB\;{\rightarrow}\;PMMA$. We will report the important physical and electrical performance difference associated with surface treatment sequence.

• Proceedings of the IEEK Conference
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• 2002.06b
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• pp.57-60
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• 2002

In this paper, transmission lines with low and high characteristic impedance (Z$_{0}$) are fabricated and analyzed. The transmission lines are fabricated on the benzo-cyclo-butene (BCB) films of a low dielectric constant. For the low Z$_{0}$, two types of coplanar waveguide (CPW) structures are fabricated, which include bottom-ground and double-ground type. Measurement shows that Z$_{0}$ values for each CPW type are 7.3 and 9.4$\Omega$, respectively, at a signal line width of 100 #m. Whit the ratio between the spacing of bottom-ground and the signal line with becomes greater than 2.5, the Z$_{0}$ is nearly saturated. In addition, thin film microstrip lines fabricated using the BCB insertion layers show very low Z$_{0}$ of 25.5$\Omega$, and this impedance is ~64 % of the values obtained from the BCB-based CPW structures of the same line width. Measurement result of CPW on BCB layer is 100.5 Ω.s 100.5 Ω.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.7
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• pp.72-78
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• 1998

This paper is focused on the fabrication of reliable novel antifuse, which could operate at low voltage along with the improvement in OFF and ON-state properties. The fabricated antifuse consists of Al/BaTi$_{2}$O$_{3}$/SiO$_{2}$/TiW-silicide structure. Through the systematic analyses for bottom metal and the intermetallic insulator, material and electri cproperties were investiaged. TiW-silicide as the bottom electrode had smooth surface with average roughness of 11.angs. at 10X10.mu.m$^{2}$ and was bing kept as-deposited SiO$_{2}$ film stable. Amorphous BaTi$_{2}$O$_{3}$ film as the another insulator was chosen because of its low breakdown strength (2.5MV/cm). breakdown voltage of antifuse is remarkably reduced by using BaTi$_{2}$O$_{3}$ film, and leakage current of that maintained low level due to the SiO$_{2}$ film. Low ON-resistance (46.ohm./.mu.m$^{2}$) and low programming voltage(9.1V) can be obtained in theses antifuses with 220.angs. double insulator layer and 19.6X10$^{-6}$ cm$^{2}$ area, while keeping sufficient OFF-state reliability (less than 1nA).

• 한국전산유체공학회:학술대회논문집
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• 2006.05a
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• pp.395-397
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• 2006

Air interlacing serves to protect the yarn against damage, strengthens inter-filament compactness or cohesion, and ensures fabric consistency. The air interlacing nozzle is used to introduce intermittent nips to a filament yarn so as to improve its performance in textile processing. The effect of various interlacing nozzle geometries on the interlacing process was studied. The geometries of interlacing nozzles with single or multiple air inlets located across the width of yarn channels are investigated. The basis case is the yarn channel, with a perpendicular main air inlet in the middle. Other cases have main air inlets, slightly inclined double sub air inlets, The yarn channel cross sectional shapes are either semicircular or rectangular shapes. The compressed impinging jet from the main air inlet hole hits the opposing bottom wall of the yarn channel, is divided into two branches, joins with the compressed air coming out from sub air inlet at the bottom and creates two free jets at both ends of the yarn channel. The compressed air movement in the cross-section consists of two opposing directional vortices. The CFD-FASTRAN flow parallel solver was used to perform steady simulations of impinging jet flow inside of the interlace nozzles. The vortical structure and the flow pattern such as pressure contour, particle traces, velocity vector plots inside of interlace nozzle geometry are discussed in this pater.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.228.2-228.2
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• 2014

Characteristics of high Fermi velocity, high mechanical strength, and transparency offer tremendous advantages for using graphene as a promising transparent conducting material [1] in electronic devices. Although graphene is a prospective candidate for touch sensor with strong mechanical properties [2] and flexibility, only few investigations have been carried out in the field of sensor as a device form. In this study, we suggest ultra-highly sensitive and transparent graphene touch sensor fabricated by single layer graphenes. One of the graphene layers is formed in the top panel as a disconnected graphene beam transferred on PDMS, and the other of the graphene layer is formed with line-patterning on the bottom panel of triple structure PET/PI/SiO2. The touch sensor shows characteristics of flexible. Its transmittance is approximately 75% where transmittance of the top panel and the bottom panel are 86.3% and 87%, respectively, at 550 nm wavelength. Sheet resistance of each graphene layer is estimated as low as $971{\Omega}/sq$. The results show that the conductance change rate (${\Delta}C/C0$) is $8{\times}105$ which depicts ultra-high sensitivity. Moreover, reliability characteristic confirms consistent behavior up to a 100-cycle test.

• The Research Journal of the Costume Culture
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• v.23 no.3
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• pp.439-453
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• 2015

This research is regarding Park Ki-Jong's Western-style court costume and emphasizes the shape and style peculiarities of Western-style court costumes in the Korean Empire from the 1876 Port Opening to the 1910 annexation of Korean to Japan. Park Ki-Jong's frock coat was made during the period of the established law from 1900 to 1910. 1) The brand was ASADA TAILOR from Kyung-Sung. 2) The shape was long at the front and back, and it featured a picked lapel and double breast with six buttons to fasten and two buttons for decoration on the upper part. 3) The frock coat's materials were black wool fabric and black ridged silk. The lining's material was black plain silk and the sleeve's lining was white with blue striped silk. 4) The front separated the upper and bottom parts. The bottom was composed of a one-piece A-line skirt that continued from the front to back. The top of the back was separated by the princess line and the center-back seam was also separated with a vent. However, the center-back of the waistline was not separated, and it continued to one piece. The sleeve shape was a two-piece sleeve style with a phony vent and two wrapping buttons.

• Journal of the Society of Naval Architects of Korea
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• v.29 no.4
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• pp.66-74
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• 1992

A panel method in the spirit of Hess & Smith(1962), and also of Dawson(1977) was developed to compute the wave resistance of a submerged, or a surface piercing, body moving in the water of finite depth. As a boundary condition on the free surface what is called the Poisson equation is used, while Yasukawa(1989) chose the Dawson equation for which the double-body flow is regarded as the basic one. In order to satisfy the boundary condition on the bottom surface automatically, the sum of a Rankine source and its image with respect to the bottom surface is chosen as the Green function, and hence the singularity is distributed only on the body and on the free surface thereby decreasing the required number of panels dramatically, compared to that of Yasukawa, without the consequential loss of accuracy. Calculations were done for a submerged sphere and for the Wigley hull, and the results are compared with other existing analytical and numerical data.