• 한국정밀공학회지
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• 제28권10호
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• pp.1123-1130
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• 2011

The pattern shape engraved on the gravure printing roll is one of the most important factors influencing ink transfer. This study focuses on the relations between dot geometry engraved on gravure printing roll and the ink transfer during the gravure printing process. The influence of dot width on printed patterns will be demonstrated. Results reveal that as the width of a dot on the printing roll increases, the ink transfer rate also increases. But over a certain size of width, surface uniformity began to recede. Therefore, proper dot geometry on the printing roll should be decided to guarantee good printing quality according to printing conditions and expected performance of the electronic devices.

• Kyungpook Mathematical Journal
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• 제59권2호
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• pp.259-275
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• 2019

The aim of this paper is to prove that Marcinkiewicz integral operators are bounded from ${\dot{K}}^{{\alpha}({\cdot}),q({\cdot})}_{p({\cdot})}({\mathbb{R}}^n)$ to ${\dot{K}}^{{\alpha}({\cdot}),q({\cdot})}_{p({\cdot})}({\mathbb{R}}^n)$ when the parameters ${\alpha}({\cdot})$, $p({\cdot})$ and $q({\cdot})$ satisfies some conditions. Also, we prove the boundedness of ${\mu}$ on variable Herz-type Hardy spaces $H{\dot{K}}^{{\alpha}({\cdot}),q({\cdot})}_{p({\cdot})}({\mathbb{R}}^n)$.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.184-184
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• 2012

Recently, InGaN/GaN multi-quantum well grown on GaN pyramid structures have attracted much attention due to their hybrid characteristics of quantum well, quantum wire, and quantum dot. This gives us broad band emission which will be useful for phosphor-free white light emitting diode. On the other hand, by using quantum dot emission on top of the pyramid, site selective single photon source could be realized. However, these structures still have several limitations for the single photon source. For instance, the quantum efficiency of quantum dot emission should be improved further. As detection systems have limited numerical aperture, collection efficiency is also important issue. It has been known that micro-cavities can be utilized to modify the radiative decay rate and to control the radiation pattern of quantum dot. Researchers have also been interested in nano-cavities using localized surface plasmon. Although the plasmonic cavities have small quality factor due to high loss of metal, it could have small mode volume because plasmonic wavelength is much smaller than the wavelength in the dielectric cavities. In this work, we used localized surface plasmon to improve efficiency of InGaN qunatum dot as a single photon emitter. We could easily get the localized surface plasmon mode after deposit the metal thin film because lnGaN/GaN multi quantum well has the pyramidal geometry. With numerical simulation (i.e., Finite Difference Time Domain method), we observed highly enhanced decay rate and modified radiation pattern. To confirm these localized surface plasmon effect experimentally, we deposited metal thin films on InGaN/GaN pyramid structures using e-beam deposition. Then, photoluminescence and time-resolved photoluminescence were carried out to measure the improvement of radiative decay rate (Purcell factor). By carrying out cathodoluminescence (CL) experiments, spatial-resolved CL images could also be obtained. As we mentioned before, collection efficiency is also important issue to make an efficient single photon emitter. To confirm the radiation pattern of quantum dot, Fourier optics system was used to capture the angular property of emission. We believe that highly focused localized surface plasmon around site-selective InGaN quantum dot could be a feasible single photon emitter.

• Journal of Radiation Protection and Research
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• 제17권1호
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• pp.43-56
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• 1992

입자 수송방정식에서 각변수(angular variable)를 각분할근사법으로 해석할 때 나타나는 이상 현상인 ray effect를 치유할 수 있는 방법의 하나로써, 유한 분할각(discrete angle quadrature)을 입자속의 공간적 분포로써 조종하는 방법인 각분할요소법 (discrete elements method)을 근거로 하여 2차원 직각좌표계에서의 입자 수송 해석 프로그램(TWODET)을 개발하였다. 평판형 등방적 고정선원이 존재하는 균질 사각형 흡수체에 대해 TWODET로 해석한 결과, 각 요소가 K-2, L인 경우에도 DOT 4.3(S-10)에서보다 ray effect 치유에 더 효과가 있음을 확인하였다. 그러나, 계산시간은 기존의 각분할법에서보다 약 4배 더 소비되었다. 선원에서 바로 진공(vacuum boundary)으로 떨어지는 구조의 경우, TWODET의 결과에서도 심한 왜곡을 보이고 있는데 선원과 바로 이웃한 진공간의 급격한 불연속성으로 인함으로 추측된다 고정선원이 있는 매질에 강한 흡수체가 추가된 구조의 경우에서도 TWODET(K-3, L-4)로 DOT 4.3(S-10)보다 좋은 결과를 보였다.

• 한국멀티미디어학회논문지
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• 제19권8호
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• pp.1337-1344
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• 2016

As the visual effect frequently used in movies or animations, special effects are well suited for the creation of buildings or materials' destruction and collapse scenes. With the relevant programs developing technologically, the adoption of a real-time physically based-system makes it possible to realistically express dynamic simulations. In the large scale, the visual expression of such effects of destroying is satisfying enough, but most common programs of those effects fail to maximize visual effect generated with the cutting of small materials. Besides, to perform a heavy simulation process needs high-performance hardware and programs, where high costs would become a serious issue. For this reason, this paper suggests a solution optimized for the effect of small materials-cutting. The progress of each step shows technologies which trace movement with the state of the completion of the character's motions and then cut the material in real-time, finally led to the very realistic visual effect. Besides, using vector inner calculation to follow the motions of object and to realize cutting effect, this study provides an experiment that constructs visual effect for visualization from the basis of mathematical algorithm and it would be certainly as an educational material used for further researches.

• Journal of Electrical Engineering and information Science
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• 제2권6호
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• pp.208-211
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• 1997

We have fabricated a single-electron-tunneling(SET) transistor with a dual gate geometry based on the SOI structure prepared by SIMOX wafers. The split-gate is the lower-gate is the lower-level gate and located ∼ 100${\AA}$ right above the inversion layer 2DEG active channel, which yields strong carrier confinement with fully controllable tunneling potential barrier. The transistor is operating at low temperatures and exhibits the single electron tunneling behavior through nano-size quantum dot. The Coulomb-Blockade oscillation is demonstrated at 15mK and its periodicity of 16.4mV in the upper-gate voltage corresponds to the formation of quantum dots with a capacity of 9.7aF. For non-linear transport regime, Coulomb-staircases are clearly observed up to four current steps in the range of 100mV drain-source bias. The I-V characteristics near the zero-bias displays typical Coulomb-gap due to one-electron charging effect.

• Journal of the Korean Physical Society
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• 제73권10호
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• pp.1502-1505
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• 2018

We present a design for hybrid circular Bragg gratings (hCBGs) for efficiently extracting single-photons emitted by InAs quantum dots (QDs) embedded in GaAs. Finite-difference time-domain simulations show that a very high photon collection efficiency (PCE) up to 96% over a 50 nm bandwidth and pronounced Purcell factors up to 19 at cavity resonance are obtained. We also systematically investigate the geometry parameters, including the $SiO_2$ thickness, grating period, gap width and the central disk radius, to improve the device performances. Finally, the PCEs and the Purcell factors of QDs located at different positions of the hCBG are studied, and the results show great robustness against uncertainties in the location of the QD.

• Nuclear Engineering and Technology
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• 제25권1호
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• pp.51-62
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• 1993

입자수송방정식의 각분할해석법에서 입자흐름방향을 묘사하는 각방향에 대한 각분할집합이 고정된 값이 아니고 각입자속으로 조종되는 각요소법에 근거하여 방사선차폐해석 목적의 전산프로그램(TDET)를 2차원직각좌표계에 대해서 개발하였다. 산란선원항의 각의존성은 Spherical Harmonics Series Expansion으로 해석하였고 입자의 에너지 의존성은 다중에너지군으로 처리하였다. 3 종류의 Benchmark 시험을 통해서 TDET 프로그램을 검증하였다. 평판형 등방적 선원을 가진 사방흡수체에 대한 해석에서 TDET 해석결과가 MORSE-CG 해석결과에 잘 일치하고. 각분할법으로 해석할때 나타나는 Ray effect를 DOT 4.3 보다 잘 치 유하고 있다. 차폐체 내에 좁은 Vacuum duct가 있는 문제의 해석에서 TDET는 MORSE-CG와 마찬가지로 duct를 통한 streaming leak-age에 대해서 분명하고 현저한, 그리고 DOT 4.3보다 매우 훌륭한 해석결과를 보여주고 있다. 원자로차폐구조물 규모에 대해, 2 에너지군, 등방적 산란 및 선형 비등방 산란의 경우에 대해서 해석한 결과 각분할법으로 계산하여 제시하고 있는 기준치에서는 여러 mesh들에 걸쳐 넓은 규모의 Ray effect를 나타내고 있는데, TDET에 의한 해석결과에서는 이웃 mesh들 간에 미세한 Ray effect를 나타내고 있다.

• 한국의상디자인학회지
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• 제15권3호
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• pp.69-83
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• 2013

Clothes show not just the different social status of people, but the ideology and value of former society through pattern, colour, materials, shapes, etc. The purpose of this article is to fill the academic blank of this part by researching the pattern of fabric design in Jing Pai(Beiing style) and Hai Pai(Shanghai style) cheong-sam during the period of the Republic of China. The contrastive analysis of regional pattern between Jing Pai and Hai Pai cheong-sam expect to provide the theoretical basis for the former fashion designers and scholars. There are three approaches in the article: Data collection method, comparison method and Combining theory with practice method as film. Regarding components of pattern, both Jing Pai and Hai Pai cheong-sam have mostly single or composite pattern like plants. Further the most of Jing Pai cheong-sam pattern is traditional flower pattern. But Haipai cheong-sam patterns have some western flower pattern. Beside that, it have some geometry pattern. Regarding arrangement of the pattern, both cheong-sams have scattered dot style, the border style, and pictures style. But continuous type of Jing Pai cheong-sam is less while Hai Pai cheong-sam is the most. Comparing Jing Pai cheong-sam color of patterns in "Moment in Peking" is unadorned and types are simple as chinese traditional clothes; However, "In the Mood for Love" introduces us various material colors, new types of patterns and extraneous characteristic geometry patterns of Hai Pai cheong-sam. Generally speaking, the main characteristic of Jing Pai cheong-sam is traditional and conservatism. It keeps Chinese traditional pattern and culture to the most extent. However, Hai Pai cheong-sam are confluent and open with absorbed external culture and techniques which are endowed new artistic color.

• 대한기계학회논문집A
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• 제34권3호
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• pp.263-271
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• 2010

e-Printing은 전통 인쇄 기술을 기반으로 하는 전자소자를 생산하기위한 새로운 기술이다. 이러한 인쇄 전자 소자들은 가격을 낮추기 위하여 대면적 인쇄가 요구된다. 이렇듯 원가를 절감하며 전자 소자에 요구되는 정밀도를 충족하기 위하여 롤투롤(Roll to Roll) 방식의 그라비아(Gravure) 인쇄 시스템이 하나의 대안으로 제시된다. 그라비아 인쇄에는 인쇄 전자 소자의 성능에 영향을 미치는 요소들이 매우 많다 : 건조 방식, 건조 온도, 운전 장력, 인쇄 속도, 잉크 점도, 잉크의 전도성, 망점 및 패턴의 정밀도. 이상에서 언급한 요소들은 각각 매우 밀접한 관계를 가지고 있다. 따라서 인쇄 전자소자의 성능을 향상시키기 위해서는 반듯이 인쇄 적합조건을 찾아야만 한다. 본 논문에서는, 전도성 잉크 및 그라이아 인쇄기를 사용하여 다양한 요소의 조건을 변화하여 패턴(선 및 면)을 인쇄하였으며, 각 인쇄 요소의 변화가 인쇄 전자소자의 성능에 미치는 영향에 관하여 분석 및 연구를 수행하였다.