• 한국전기전자재료학회논문지
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• 제26권4호
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• pp.271-274
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• 2013

Power Metal Oxide Semiconductor Field Effect Transistor's (MOSFETs) are well known for superior switching speed, and they require very little gate drive power because of the insulated gate. In these respects, power MOSFETs approach the characteristics of an "ideal switch". The main drawback is on-resistance RDS(on) and its strong positive temperature coefficient. While this process has been driven by market place competition with operating parameters determined by products, manufacturing technology innovations that have not necessarily followed such a consistent path have enabled it. This treatise briefly examines metal oxide semiconductor (MOS) device characteristics and elucidates important future issues which semiconductor technologists face as they attempt to continue the rate of progress to the identified terminus of the technology shrink path in about 2020. We could find at the electrical property as variation p base dose. Ultimately, its ON state voltage drop was enhanced also shrink chip size. To obtain an optimized parameter and design, we have simulated over 500 V Field ring using 8 Field rings. Field ring width was $3{\mu}m$ and P base dose was $1e15cm^2$. Also the numerical multiple $2.52cm^2$ was obtained which indicates the doping limit of the original device. We have simulated diffusion condition was split from $1,150^{\circ}C$ to $1,200^{\circ}C$. And then $1,150^{\circ}C$ diffusion time was best condition for break down voltage.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.164-164
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• 2013

Among multicomponent nanostructures, hybrid nanocatalysts consisting of metal nanoparticle-semiconductor junctions offer an interesting platform to study the role of metal-oxide interfaces and hot electron flows in heterogeneous catalysis. In this study, we report that hot carriers generated upon photon absorption significantly impact the catalytic activity of CO oxidation. We found that Pt-CdSe-Pt nanodumbbells exhibited a higher turnover frequency by a factor of two during irradiation by light with energy higher than the bandgap of CdSe, while the turnover rate on bare Pt nanoparticles didn't depend on light irradiation. We also found that Pt nanoparticles deposited on a GaN substrate under light irradiation exhibit changes in catalytic activity of CO oxidation that depends on the type of doping of the GaN. We suppose that hot electrons are generated upon the absorption of photons by the semiconducting nanorods or substrates, whereafter the hot electrons are injected into the Pt nanoparticles, resulting in the change in catalytic activity. We discuss the possible mechanism for how hot carrier flows generated during light irradiation affect the catalytic activity of CO oxidation.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.669-669
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• 2013

Hierarchical N doped TiO2 nanostructured catalyst with micro, meso and macro porosity have been synthesized by a facile self-formation route using ammonia and titanium isopropoxide precursor. The samples were calcined in different calcination temperature ranging from $300^{\circ}C$ to $800^{\circ}C$ at slow heating rate ($5^{\circ}C$/min) and designated as NHPT-300 to NHPT-800. $TiO_2$ nanostructured catalyst have been characterized by physico-chemical and spectroscopy methods to explore the structural, electronic and optical properties. UV-Vis diffuse reflectance spectra confirmed the red shift and band gap narrowing due to the doping of N species in TiO2 nanoporous catalyst. Hierarchical macro porosity with fibrous channel patterning was observed (confirmed from FESEM) and well preserved even after calcination at $800^{\circ}C$, indicating the thermal stability. BET results showed that micro and mesoporosity was lost after $500^{\circ}C$ calcination. The photocatalytic activity has been evaluated for methanol oxidation to formaldehyde in visible light. The enhanced photocatalytic activity is attributed to combined synergetic effect of N doping for visible light absorption, micro and mesoporosity for increase of effective surface area and light harvestation, and hierarchical macroporous fibrous structure for multiple reflection and effective charge transfer.

• 한국초전도ㆍ저온공학회논문지
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• 제17권4호
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• pp.30-33
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• 2015

We report the synthesis of Ni-doped $BaFe_2Se_3$ single crystals by using a flux method. X-ray diffraction (XRD) of $Ba(Fe_{1-x}Ni_x)_2Se_3$ shows a gradual peak shift with an increase in the nominal Ni-doping rate, x = 0, 0.05, and 0.10, due to a decrease in unit-cell volume. All samples show a spin glass transition, and temperature dependence of magnetic susceptibility shows a negligible change in the spin-glass transition temperature ($T_g$) with Ni concentration x. The temperature dependence of electrical resistivity for $BaFe_2Se_3$ shows an insulating behavior, and the resistivity value at 295 K and the activation energy ($E_a$) obtained from the Arrhenius plot decrease with increasing x. These results suggest that the Ni doping can be effectively worked as a dopant for electron charge carriers, but is less efficient in controlling the magnetic property, such as spin glass transition, in the $BaFe_2Se_3$ compound.

• 한국재료학회지
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• 제30권9호
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• pp.458-464
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• 2020

Zinc-ion hybrid supercapacitors (ZICs) have recently been spotlighted as energy storage devices due to their high energy and high power densities. However, despite these merits, ZICs face many challenges related to their cathode materials, activated carbon (AC). AC as a cathode material has restrictive electrical conductivity, which leads to low capacity and lifetime at high current densities. To overcome this demerit, a novel boron (B) doped AC is suggested herein with improved electrical conductivity thanks to B-doping effect. Especially, in order to optimize B-doped AC, amounts of precursors are regulated. The optimized B-doped AC electrode shows a good charge-transfer process and superior electrochemical performance, including high specific capacity of 157.4 mAh g^-1 at current density of 0.5 A g^-1, high-rate performance with 66.6 mAh g^-1 at a current density of 10 A g^-1, and remarkable, ultrafast cycling stability (90.7 % after 10,000 cycles at a current density of 5 A g^-1). The superior energy storage performance is attributed to the B-doping effect, which leads to an excellent charge-transfer process of the AC cathode. Thus, our strategy can provide a rational design for ultrafast cycling stability of next-generation supercapacitors in the near future.

• 한국정보통신학회논문지
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• 제17권1호
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• pp.145-150
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• 2013

본 연구에서는 차세대 나노소자인 DGMOSFET에 대하여 문턱전압 이하영역에서 발생하는 단채널 효과 중 문턱전압 및 드레인유도장벽감소의 변화를 스켈링 이론에 따라 분석하였다. 포아송방정식의 분석학적 해를 구하기 위하여 전하분포함수에 대하여 가우시안 함수를 사용함으로써 보다 실험값에 가깝게 해석하였으며 이때 가우시안 함수의 변수인 이온주입범위 및 분포편차 그리고 소자 파라미터인 채널의 두께, 도핑농도 등에 대하여 문턱전압 특성의 변화를 관찰하였다. 본 연구의 모델에 대한 타당성은 이미 기존에 발표된 논문에서 입증하였으며 본 연구에서는 이 모델을 이용하여 문턱전압이하 특성을 분석하였다. 분석결과 스켈링 이론 적용 시 문턱전압 및 드레인유도장벽감소 현상이 변화하였으며 변화 정도는 소자파라미터에 따라 변화한다는 것을 관찰하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2000년도 제18회 학술발표회 논문개요집
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• pp.180-180
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• 2000

Plasma source ion implantation is a new doping technique for the formation of shallow junction with the merits of high dose rate, low-cost and minimal wafer charging damage. In plasma source ion implantation process, the wafer is placed directly in the plasma of the appropriate dopant ions. Negative pulse bias is applied to the wafer, causing the dopant ions to be accelerated toward the wafer and implanted below the surface. In this work, inductively couples plasma was generated by anodized Al antenna that was located inside the vacuum chamber. The outside wall of Al chamber was surrounded by Nd-Fe-B permanent magnets to confine the plasma and to enhance the uniformity. Before implantation, the wafer was pre-sputtered using DC bias of 300B in Ar plasma in order to eliminate the native oxide. After cleaning, B2H6 (5%)/H2 plasma and negative pulse bias of -1kV to 5 kV were used to form shallow p+/n junction at the boron dose of 1$\times$1015 to 5$\times$1016 #/cm2. The as-implanted samples were annealed at 90$0^{\circ}C$, 95$0^{\circ}C$ and 100$0^{\circ}C$during various annealing time with rapid thermal process. After annealing, the sheet resistance and the junction depth were measured with four point probe and secondary ion mass spectroscopy, respectively. The doping uniformity was also investigated. In addition, the electrical characteristics were measured for Schottky diode with a current-voltage meter.

• 열처리공학회지
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• 제31권4호
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• pp.187-193
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• 2018

In this study, the electrical conductivity, transmittance and gas barrier properties of diamond-like carbon (DLC) thin films were studied. DLC is an insulator, and has transmittance and oxygen gas barrier properties varying depending on the thickness of the thin film. Recently, many researchers have been trying to apply DLC properties to specific industrial conditions. The DLC thin films were deposited by PECVD (Plasma Enhanced Chemical Vapor Deposition) process. The doping gas was used for the DLC film to have electrical conductivity, and the optimum conditions of transmittance and gas barrier properties were established by adjusting the gas ratio and DLC thickness. In order to improve the electrical conductivity of the DLC thin film, $N_2$ doping gas was used for $CH_4$ or $C_2H_2$ gas. Then, a heat treatment process was performed for 30 minutes in a box furnace set at $200^{\circ}C$. The lowest sheet resistance value of the DLC film was found to be $18.11k{\Omega}/cm^2$. On the other hand, the maximum transmittance of the DLC film deposited on the PET substrate was 98.8%, and the minimum oxygen transmission rate (OTR) of the DLC film of $C_2H_2$ gas was 0.83.

• 분석과학
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• 제13권4호
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• pp.504-510
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• 2000

Glycyrrhizin은 감초(Glycyrrhizae Radix)의 주성분으로써 항궤양, 항염증, 항알러지, 진해작용을 하는 것으로 알려져 있으며 glycyrrhetinic acid에 2당류가 연결된 매우 hydrophilic하고 분자량이 큰(mw=822.92) 물질이다. 본 연구에서는 on-line high performance liquid chromatography (HPLC)/electrospray ionization (ESI)- mass spectrometery (MS)를 이용하여 각종 glycyrrhizin 표준품들의 불순물들에 대한 구조 규명을 하였다. 사용한 HPLC column은 $C_{18}$($3.9{\times}300mm$, $10{\mu}m$)이었으며 이동상은 acetic acid/$H_2O$(1:15):acetonitrile=3:2를 0.8ml/min으로 흘려주었고 용출물을 post-column splitter를 사용하여 50:1로 split시켜서 ESI-MS에 주입하였다. ESI-MS는 negative mode이었으며 CapEx voltage는 100 V에서 각 불순물들의 분자량이 측정되었고 구조규명을 위하여 CapEx voltage를 80-300 V까지 변화시켜주는 CID (collision induced dissoclation) 기법을 사용함으로써 fragment를 얻을 수 있었고 이를 바탕으로 구조규명을 하였다. 주요 불순물의 구조는 glycyrrhetic acid moiety에 수산화기(-OH)가 붙은 형태와 glycyrrhetic acid moiety의 12번 위치에서 환원이 일어난 형태 이었다. 표준품의 순도는 약 90% 정도이었다.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2005년도 추계종합학술대회
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• pp.833-836
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• 2005

Nano-gap trench is fabricated by the novel electrochemical etching technique using forward biased PN junction formed at the backside of the wafer. PN junction is formed using boron nitride wafer and the concentration of the boron doping is the high value of $1{\times}10^{19}$ $cm^{-3}$. The electro-chemical etching is performed in the 5% HF solution under the forward bias voltage of $1{\sim}2V$. The relationship between the etch rate of the trench and the voltage of the forward bias is investigated and the dependence of the gap for the voltage also examined. The etch rate increase from 0.027 ${\mu}m/min$ to 0.031 ${\mu}m/min$ as the value of the applied voltage increase from 1V to 2V, but the the gap is kept constant value of 40 nm.