• 한국정보디스플레이학회:학술대회논문집
• /
• 2008.10a
• /
• pp.1418-1420
• /
• 2008

In this paper, the light emitting efficiency, spectrum, and the lifetime of the phosphorescent devices, whose emission characteristics are strongly dominated not only by the energy transfer but also by the charge carrier trapping induced by the emissive dopant, are explained by differences in the energy levels of the host, dopant, and nearby transport layers. On the basis of our finding on device performance and photocurrent measurement data by time-of-flight (TOF), we investigated the effect of the difference of carrier trapping dopant and properties of the host materials on the efficiency roll-off of phosphorescent organic light emitting diode (OLED), along with a physical interpretation and practical design scheme, such as a multiple host system, for improving the efficiency and lifetime of devices.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2008.10a
• /
• pp.1319-1322
• /
• 2008

$CsN_3$ was developed as a novel n doping material with air stability and low deposition temperature. Evaporation temperature of $CsN_3$ was similar to that of common hole injection material and it worked well as a n dopant in electron transport layer. Driving voltage was lowered and high power efficiency was obtained in green phosphorescent devices by using $CsN_3$ as a dopant in electron transport layer. It could also be used as a charge generation layer in combination with $MoO_3$. In addition, n doping mechanism study revealed that $CsN_3$ is decomposed into Cs and $N_2$ during evaporation. This is the first work reporting air stable and low temperature evaporable n dopant in organic light-emitting diodes.

• Journal of the Institute of Electronics and Information Engineers
• /
• v.49 no.12
• /
• pp.179-183
• /
• 2012

The random dopant fluctuation (RDF) effects of tunneling field-effect transistors (TFETs) have been observed by using atomistic 3-D device simulation. Due to extremely low body doping concentration, the RDF effects of TFETs have not been seriously investigated. However, in this paper, it has been found that the randomly generated and distributed source dopants increase the variation of threshold voltage ($V_{th}$), drain induced current enhancement (DICE) and subthreshold slope (SS) of TFETs. Also, some ways of relieving the RDF effects of TFETs have been presented.

• Progress in Superconductivity and Cryogenics
• /
• v.4 no.1
• /
• pp.21-25
• /
• 2002

The effect of Ca-doping on the superconducting properties of Nd-Ba-Cu-O bulk superconductors, fabricated by the oxygen-controlled melt growth process, has been systematically investigated. Various c-axis textured bulk samples were grown using precursors with the nominal compositions of $Nd_{1.8-x}Ca_{x]Ba_{2.4}Cu_{3.4}O_{y}$ (x= 0.00, 0.02, 0.05, 0.10, 0.15) in a reduced oxygen atmosphere of 1%O$_2$ in Ar. Magnetization measurements revealed that the critical temperatures(Tc) were almost linearly depressed from 95K to 86K with increasing the Ca dopant from x : 0.0 to 0.15, respectively, and thus critical current densities(Jc) at 77K and for H//c-axis of specimens were gradually degraded with increasing x. Compositional analyses revealed that although the amounts of the Ca dopant both in $NdBa_2Cu_2O_y(Nd123) and Nd_4Ba_2Cu_2O_{10}(Nd422)$,/TEX> were increased with increasing x, only less than half of the initial Ca compositions were detected in melt-grown Ca-doped Nd-Ba-Cu-O bulk crystals. The supression of Tc is attributed to an increased Nd substitution for the Ba site in the Nd123 superconducting matrix with increasing the amount of the Ca dopant.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.04b
• /
• pp.30-33
• /
• 2004

Shallow p+-n junctions were formed by low-energy ion implantation and dual-step annealing processes The dopant implantation was performed into the crystalline substrates using $BF_2$ ions. The annealing was performed with a rapid thermal processor and a furnace. FA+RTA annealing sequence exhibited better junction characteristics than RTA+FA thermal cycle from the viewpoint of junction depth. A new simulator is designed to model boron diffusion in silicon, which is especially useful for analyzing the annealing process subsequent to ion implantation. The model which is used in this simulator takes into account nonequilibrium diffusion, reactions of point defects, and defect-dopant pairs considering their charge states, and the dopant inactivation by introducing a boron clustering reaction. Using a resonable parameter values, the simulator covers not only the equilibrium diffusion conditions but also the nonequilibrium post-implantation diffusion. Using initial conditions and boundary conditions, coupled diffusion equation is solved successfully. The simulator reproduced experimental data successfully.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.02a
• /
• pp.319-319
• /
• 2012

현재 폭넓게 이용되고 있는 STI (Shallow Trench Isolation) 공정에서 active edge 부분에 발생하는 기생 transistor의 subthreshold hump 특성을 제어하는 연구가 활발히 이루어지고 있다. 일반적으로 STI 공정을 이용하는 MOSFET에서 active edge 부분의 얇게 형성된 gate oxide, sharp한 active edge 형성, STI gap-fill 공정 중에 생기는 channel dopant out-diffusion은 subthreshold hump 특성의 주된 요인이다. 이와 같은 문제점을 해결하기 위해 active edge rounding process와 channel dopant compensation의 implantation을 이용하여 subthresold hump 특성 개선을 연구하였다. 본 연구는 STI 공정에 필요한 wafer와 phosphorus를 함유한 wafer를 한 chamber 안에서 auto-doping하는 방법을 이용하여 subthresold hump 특성을 구현하였다. phosphorus를 함유한 wafer에서 빠져나온 phosphorus가 STI 공정중인 wafer로 침투하여, active edge 부분의 channel dopant인 boron 농도를 상대적으로 낮춰 active edge 부분의 가 감소하고 leakage current를 증가시킨다. transistor의 channel length, gate width이고, wafer#No가 클수록 phosphorous를 함유한 wafer까지의 거리는 가까워진다. wafer #01은 hump 특성이 없고, wafer#20은 에서 심한 subthreshold hump 특성을 보였다. channel length 고정, gate width를 ~으로 가변하여 width에 따른 영향을 실험하였다. active 부분에 대한 SCM image로 확인된 phosphorus에 의한 active edge 부분의 boron 농도 감소와 gate width vs curve에서 확인된 phosphorus에 의한 감소가 narrow width로 갈수록 커짐을 확인하였다.

• Journal of the Korean Ceramic Society
• /
• v.53 no.6
• /
• pp.635-640
• /
• 2016

Electrical behavior of AlN ceramics sintered with $Y_2O_3$ as a sintering aid has been investigated with respect to additional $TiO_2$ dopant. From the impedance spectroscopy, it was found that the grain and grain boundary conductivities have greatly decreased with addition of $TiO_2$ dopant. The $TiO_2$ dopant also increased the activation energy of the grain conductivity by about 0.37 eV; this increase was attributed to the formation of an associate between Al vacancies and Ti ions at the Al sites. Similarly, the electronic conductivity was reduced by $TiO_2$ addition. However, $TiO_2$ solubility in AlN grains was below the detection limit of typical EDX analysis. Grain boundary was clean, without liquid films, but did show yttrium segregation. The transference number of ions was close to 1, showing that AlN is a predominantly ionic conductor. Based on the observed results, the implications of using AlN applications as insulators have been discussed.

• Korean Journal of Crystallography
• /
• v.13 no.2
• /
• pp.63-68
• /
• 2002

Zn/sub 2-x/Mn/sub x/SiO/sub 4/ phosphors for PDP were synthesized by solid state reaction method. The effects of firing temperature, ratio of hydrogen gas to nitrogen for heat treatment and concentration of activator and co-dopants on the luminous properties have been investigated. It was found that the phosphor fabricated at 1400℃ with x = 0.002 Mn concentration had a maximum brightness. Luminous properties of a phosphor were improved when Cr/sup 3＋/ was added as a co-dopant rather than other co-dopants.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.40 no.11
• /
• pp.1-8
• /
• 2003

In this paper, the dependence of silicide properties such as sheet resistance and cross-sectional profile on the dopants for source/drain and gate has been characterized. There was little difference of sheet resistance among the dopants such as As, P, BF$_2$ and B$_{11}$ just a(ter formation of NiSi using RTP (Rapid Thermal Process). However, the silicide properties showed strong dependence on the dopants when thermal treatment was applied after silicidation. BF$_2$ implanted silicon showed the most stable property, while As implanted one showed the worst. The main reason of the excellent property of BF$_2$ sample is believed to be tile retardation of hi diffusion by the flourine. Therefore, retardation of Ni diffusion is highly desirable for high performance Ni-silicide technology.y.

• Bulletin of the Korean Chemical Society
• /
• v.30 no.4
• /
• pp.863-868
• /
• 2009

New spiro[fluorene-7,9′-benzofluorene]-based blue host material, 5-phenyl-spiro[fluorene-7,9′-benzofluorene] (BH-1P), was successfully prepared by reacting 5-bromo-spiro[fluorene-7,9′-benzofluorene] (1) with phenyl boronic acid through the Suzuki reaction. 5-(N,N-Diphenyl)amino-spiro[fluorene-7,9′-benzofluorene] (BH-1DPA) and diphenyl-[4-(2-[1,1;4,1]terphenyl-4-yl-vinyl)-phenyl]amine (BD-1) were used as dopant materials. 2,5-Bis-(2',2"- bipyridin-6-yl)-1,1-diphenyl-3,4-diphenylsilacyclopentadiene (ET4) and Alq3 were used as electron transfer materials. Their UV absorption, photoluminescence and thermal properties were examined. The blue OLEDs with the configuration of ITO/DNTPD/$\alpha$-NPD/BH-1P:5% dopant/$Alq_3$ or ET4/LiF-Al prepared from the BH-1P host and BH-1DPA and BD-1 dopants showed a blue EL spectrum at 452 nm at 10 V and a luminance of 923.9 cd/$m^2$ with an efficiency of 1.27 lm/W at a current density of 72.57 mA/$cm^2$.