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Dependence on Dopant of Ni-silicide for Nano CMOS Device  

배미숙 (충남대학교 전자공학과)
지희환 (충남대학교 전자공학과)
이헌진 (충남대학교 전자공학과)
오순영 (충남대학교 전자공학과)
윤장근 (충남대학교 전자공학과)
황빈봉 (충남대학교 전자공학과)
왕진석 (충남대학교 전자공학과)
이희덕 (충남대학교 전자공학과)
Publication Information
Journal of the Institute of Electronics Engineers of Korea SD / v.40, no.11, 2003 , pp. 1-8 More about this Journal
Abstract
In this paper, the dependence of silicide properties such as sheet resistance and cross-sectional profile on the dopants for source/drain and gate has been characterized. There was little difference of sheet resistance among the dopants such as As, P, BF$_2$ and B$_{11}$ just a(ter formation of NiSi using RTP (Rapid Thermal Process). However, the silicide properties showed strong dependence on the dopants when thermal treatment was applied after silicidation. BF$_2$ implanted silicon showed the most stable property, while As implanted one showed the worst. The main reason of the excellent property of BF$_2$ sample is believed to be tile retardation of hi diffusion by the flourine. Therefore, retardation of Ni diffusion is highly desirable for high performance Ni-silicide technology.y.
Keywords
Ni-Silicide; Dopant; Thermal stability;
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