• The Journal of the Korea institute of electronic communication sciences
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• v.10 no.1
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• pp.13-20
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• 2015

Existing LDMOS power amplifier that used class-AB and doherty system shows 55% of efficiency in 60MHz narrow band. Because RRH has been applied to power amplifier at base station. It is required that over 100MHz expanded band and more than 60% high efficiency power amplifier. In this paper we designed class-J power amplifier using LDMOS FET which has over 60% high efficiency characteristic in 200MHz. The output matching circuit of designed class-J power amplifier has been optimized to contain pure reactance at second harmonic load and has low quality factor Q. As a measurement result of the amplifier, when we input continuous wave signal, we checked 62~70% of power added efficiency(PAE) in 2.06~2.2GHz including WCDMA frequency as a 10W class-J power amplifier.

• Journal of Advanced Navigation Technology
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• v.27 no.2
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• pp.197-202
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• 2023

This paper presents the design method and electrical characteristics of a high-efficiency power amplifier for a 50 Watts class repeater applied to a 5G system and used in in-building, subway, and tunnel. GaN was used for the termination transistor of the power amplifier designed here, and intermodulation signals were removed using DPD to satisfy linearity. In addition, in order to handle various requirements such as amplifier gain control and alarm processing required in the 5G system, the microprocessor is designed to exist inside the power amplifier. The amplifier manufactured to confirm the electrical performance of the power amplifier satisfying these conditions satisfied 46.5 dBm and the overall efficiency of the amplifier was 37%, and it was confirmed that it satisfied various alarm conditions and electrical characteristics required by telecommunication companies.

• Proceedings of the KAIS Fall Conference
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• 2010.11a
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• pp.76-79
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• 2010

본 논문에서는 고 효율 및 고 출력 특성을 가지는 질화갈륨(GaN) 소자를 이용하여 WiMAX 및 LTE System에 사용될 수 있는 DPD용 Pallet Amplifier를 제작하였다. 제작된 Pallet Amplifier는 Pre-drive로써 저 전류의 MMIC를 채택하고, Drive 단과 Main 단에 15W 급과 30W 급의 질화갈륨 소자를 사용 하였으며, 추가적인 효율 개선을 위해 PCB상에 Doherty Structure를 적용함으로써 보다 높은 효율을 구현하였다. 제작된 Pallet Amplifier는 음 전원 Bias 제어 회로, 온도에 따른 Gain 보상회로, Sequence 회로 및 Main 전원 Drop에 따른 보호 회로를 구현하였다. WiMAX Signal을 이용한 Modulation Power 10Watt Test에서 약 36.8~38.3%의 Pallet 효율과 DPD Solution인 TI GC5325SEK DPD Board 사용 시 ACLR은 약 46dBc 이상을 가지는 것으로 측정되었다. 본 논문에서 제작된 Pallet Amplifier는 Upper Band와 Lower Band로 나누어 제작되었던 기존 Pallet Amplifier와 달리 하나의 Pallet Amplifier로 2496~2690MHz에서 모두 사용하면서 종전에 사용되고 있는 Pallet Amplifier에 비해 Size가 최소 10% 이상 축소되어 효율 및 크기 면에서 종전 Pallet Amplifier보다 큰 이점을 갖는다.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.26 no.3
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• pp.276-282
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• 2015

Until recently, power amplifiers using LDMOS were Class-AB and Doherty type, and showed 55 % efficiency for narrowband of 60 MHz bandwidth. However, owing to the RRH application of base stations power amplifier module, a bandwidth expansion of at least 100 MHz and high efficiency power amplifiers of at least 60 % power efficiency are required. In this study, a Class-J power amplifier was designed by optimizing an output matching circuit so that the second harmonic load will contain a pure reactance element only and have broadband characteristics by using GaN HEMT. The measurements showed that a 45 W Class-J power amplifier with a power added efficiency of 60~75 % was achieved when continuous wave signals were input at 1.6~2.3 GHz, including W-CDMA application.

• 한국정보통신설비학회:학술대회논문집
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• 2004.08a
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• pp.23-26
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• 2004

본 논문은 전력증폭기의 효율을 개선하기 위한 도허티증폭기의 특성 분석에 관한 것이다. 도허티증폭기의 특성을 분석하기 위해 2-tone신호와 WCDMA신호를 사용하였고 180W PEP LDMOSFET을 사용하였다. 제작된 도허티증폭기는 출력 전력 20W에서 약 10%정도의 효율개선을 나타냈지만 선형성이 저하되는 특성을 나타내었다. 저하된 선형성을 개선시키기 위해 carrier 증폭기(Amp. A)와 peaking 증폭기(Amp. B)를 각각 변화하였으며, carrier 증폭기는 높은 PEP(Peak Envelope Power)와 적은 Id(drain current)가 되도록 하였고, peaking 증폭기는 높은 이득과, 낮은 gate bias에서 IMD(Intermodulation Distortion)가 상쇄되도록 하였다. 최종 측정 결과 출력전력 20W에서 선형성은 class AB증폭기와 비교하여 유사한 결과를 얻었으며, 효율은 약 10% 이상의 개선을 얻을 수 있었다.

• Journal of the Institute of Electronics and Information Engineers
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• v.51 no.7
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• pp.26-36
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• 2014

The needs of active phased arrays antenna system is getting more increased for IMT-Advanced system efficiency. The active phased array structure consists of lots of small transceivers and radiation elements to increase system efficiency. The minimized module of high efficiency transceiver is key for system implementation. The power amplifier of transmitter decides efficiency of base-station. In this paper, we design and implement minimized module of high efficiency transceiver for IMT-Advanced active phased array system. The temperature compensation circuit of transceiver reduces gain error and the analog pre-distorter of linearizer reduces implemented size. For minimal size and high efficiency, the implented power amplifier consist of GaN MMIC Doherty structure. The size of implemented module is $40mm{\times}90mm{\times}50mm$ and output power is 47.65 dBm at LTE band 7. The efficiency of power amplifier is 40.7% efficiency and ACLR compensation of linearizer is above 12dB at operating power level, 37dBm. The noise figure of transceiver is under 1.28 dB and amplitude error and phase error on 6 bit control is 0.38 dB and 2.77 degree respectively.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.17 no.6 s.109
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• pp.519-528
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• 2006

This thesis is regarding of fabricating wibro PAM. First of all, we need to set specification based on link budget for wibro communication circumstance in order to develop PAM, then we decided specification concerning of wibro PAM by considering TTAS_Ko_06_0082R1 which is standarded in Korea, and IEEE Std. 802. 16d/e which is international standard. We selected the Doherty structure to increase efficiency, and pre-distorter structure to increase linearity. The fabricated PAM has not only a result of $26.5dB{\pm}1.0dB$ gain characteristics and maximum of -14 dB return loss characteristics in full frequency bands and full output ranges, but also a result of 37 dBc at 4 tone IMD characteristics which is improved result of 843 and a result of 31 dBc spurious characteristics which is improved result of 5 dB at 4.77 MHz offset point in status of having 27 % efficiency in the 26 dBm high power amplifier output signal. We confirmed the suggested structure is better than others by comparing with normal structure, balanced structure and Doherty structure without predistorter.

• Proceedings of the KIEE Conference
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• 2006.10a
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• pp.141-142
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• 2006

본 논문에서는 단일 FET를 이용하여 900MHz/2.14GHz 이중 대역 고효율 도허티 전력증폭기 설계 구현을 하였다. 이중대역 도허티 전격증폭기의 출력전력은 900MHz 에서 35.91dBm, 2.14GHz에서 35.91 dBm의 출력을 얻었으며, 전력부가효율은 900MHz에서 40.32%, 2.14GHz에서는 40.47%의 효율을 획득 하였다. 또한 본 논문에서 단 하나의 능등소자를 이용하여 최대한의 출력전력을 얻기 위하여 최대 전력정합법을 사용하였으며 그 결과 이중대역 전력증폭기를 구현할 수 있었다.