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http://dx.doi.org/10.13067/JKIECS.2015.10.1.13

A Design of Wideband, High Efficiency Power Amplifier using LDMOS  

Choi, Sang-Il (경남대학교 첨단공학과)
Lee, Sang-Rok (경남대학교 정보통신공학과)
Rhee, Young-Chul (경남대학교 첨단공학과)
Publication Information
The Journal of the Korea institute of electronic communication sciences / v.10, no.1, 2015 , pp. 13-20 More about this Journal
Abstract
Existing LDMOS power amplifier that used class-AB and doherty system shows 55% of efficiency in 60MHz narrow band. Because RRH has been applied to power amplifier at base station. It is required that over 100MHz expanded band and more than 60% high efficiency power amplifier. In this paper we designed class-J power amplifier using LDMOS FET which has over 60% high efficiency characteristic in 200MHz. The output matching circuit of designed class-J power amplifier has been optimized to contain pure reactance at second harmonic load and has low quality factor Q. As a measurement result of the amplifier, when we input continuous wave signal, we checked 62~70% of power added efficiency(PAE) in 2.06~2.2GHz including WCDMA frequency as a 10W class-J power amplifier.
Keywords
Wideband; LDMOS; High Efficiency; Class-J Power Amplifier;
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Times Cited By KSCI : 1  (Citation Analysis)
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