• 한국정보통신학회논문지
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• 제23권3호
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• pp.311-317
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• 2019

먼저 광학 신호를 이용한 다양한 응용 분야에서의 핵심 요소인 광학 빔 조향 성능 향상을 위하여 실리콘 기반 격자 구조의 특성을 해석하였다. 이를 기반으로 높은 방사 효율과 좁은 빔 폭을 얻기 위해서 기존의 격자 구조 방사기에 분배 브래그 반사기(Distributed Bragg Reflector, DBR)를 집적한 구조를 제안한다. 분배 브래그 반사기의 위치에 따른 방사 효율과 방사 각도의 전치 반폭을 분석하고 이를 토대로 최적화 구조를 제안한다. 제안한 격자 구조는 상보형 금속산화 반도체(complementary metal-oxide semiconductor, CMOS) 공정과 호환 가능하며, 최대 방사 효율 87.1% 및 최소 방사 각도의 반치 전폭 $4.68^{\circ}$를 가진다.

• Current Optics and Photonics
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• 제4권6호
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• pp.461-465
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• 2020

A dual-mode laser terahertz source consisting of two in-line distributed Bragg reflector (DBR) laser diodes (LD) is proposed. It is less susceptible to residual reflections from facets than an in-line dual-mode distributed feedback (DFB) LD. The characteristics of the proposed terahertz source are theoretically investigated using a split-step time-domain simulation. It is shown that terahertz waves of frequencies from 385 GHz to 1725 GHz can be generated by appropriate thermal tuning of two DBR LDs. The dual-mode DBR LD terahertz source exhibits good spectral quality for residual facet reflectivity below 0.02, but facet reflectivity of the in-line dual-mode DFB LD terahertz source should be below 0.002 to provide similar spectral quality.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권2호
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• pp.1440-1442
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• 2007

In this work, we have modeled and fabricated microcavity-enhanced OLED using the 1-dimensional distributed Bragg reflector model (DBR). Results show that simulated spectrum intensity of microcavity OLED increased more than 30% compared to the conventional OLED, by use of DBR with $TiO_2$ and $SiO_2$. Spectral change of green and blue emission was expected to give the deeper color. The experimental design and characterization as well as the matching with simulated properties were performed for microcavity OLED for actual application.

• ETRI Journal
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• 제28권4호
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• pp.533-536
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• 2006

A distributed Bragg reflector (DBR) laser and a high speed electroabsorption modulator (EAM) are integrated on the basis of the selective area growth technique. The typical threshold current is 4 to 6 mA, and the side mode suppression ratio is over 40 dB with single mode operation at 1550 nm. The DBR laser exhibits 2.5 to 3.3 mW fiber output power at a laser gain current of 100 mA, and a modulator bias voltage of 0 V. The 3 dB bandwidth is 13 GHz. A 10 Gbps non-return to zero operation with 12 dB extinction ratio is obtained. A four-channel laser array with 100 GHz wavelength spacing was fabricated and its operation at the designed wavelength was confirmed.

• 전자공학회논문지A
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• 제30A권9호
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• pp.24-29
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• 1993

The 607 nm GaInP/AlInP distributed bragg reflector (DBR) lasers using the second order gratings period of 184.7 nm were fabricated by gas source molecular beam epitaxy (GSMBE) and the conventional holographic method. GaInP/AlInP DBR lasers show single mode operations up to 1.8 times the threshold currents with a wavelength of 607 nm at 140 K and a wavelength shift of 0.033 nm/K is observed. No mode hopping was found in the temperature ranging from 120 to 165K.

• Current Optics and Photonics
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• 제1권5호
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• pp.544-550
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• 2017

This simulation based study reports a novel tunable, compact, room temperature terahertz (THz) transistor source, operated on the concept of charge plasma oscillation with the capability of radiating within a terahertz gap. A vertical cavity with a quasi-periodic distributed-Bragg-reflector has been attached to a THz plasma wave transistor to achieve a monochromatic coherent surface emission for single as well as multi-color operation. The resonance frequency has been tuned from 0.5 to 1.5 THz with the variable quality factor of the optical cavity from 5 to 290 and slope efficiency maximized to 11. The proposed surface emitting terahertz transistor is able to satisfy the demand for compact solid state terahertz sources in the field of teratronics. The proposed device can be integrated with Si CMOS technology and has opened the way towards the development of silicon photonics.

• 통합자연과학논문집
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• 제2권4호
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• pp.275-279
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• 2009

Recently, number of studies for porous silicon (PSi) have been investigated by many researchers. Multistructured porous silicon such as a distributed Bragg reflector (DBR) PSi, has been a topic of interest, because of its unique optical properties. DBR PSi were prepared by using an electrochemical etch of $P{^+}{^+}$-type silicon wafer with resistivity between 0.1 and $10m{\Omega}cm$. The electrochemical etch with square wave current density results in two different refractive indices in the porous layer. In this work, DBR porous silicon chips for a simple and portable organic vapor-sensing device have fabricated. The optical characteristics of DBR PSi have been investigated. DBR porous silicon have been characterized by FT-IR and Ocean optics 2000 spectrometer. The device used DBR PSi chip has been demonstrated as an excellent gas sensor, showing a great senstivity to organic vapor at room temperature.

• Journal of the Optical Society of Korea
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• 제12권4호
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• pp.303-308
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• 2008

Directly modulated fiber-optic links generally suffer higher link loss and larger signal distortion than externally modulated links. These result from the electron-photon conversion loss and laser modulation dynamics. As a method to overcome the drawbacks, we have experimentally demonstrated the RF performance of directly modulated, ultra-strong injection-locked gain-lever distributed Bragg reflector (DBR) lasers. The free-running DBR lasers exhibit an improved amplitude modulation efficiency of 12.4 dB under gain-lever modulation at the expense of linearity. By combining gain-lever modulation with ultra-strong optical injection locking, we can gain the benefits of both improved modulation efficiency from the gain-lever effect, plus improved linearity from injection locking. Using an injection ratio of R=11 dB, a 23.4-dB improvement in amplitude response and an 18-dB improvement in spurious-free dynamic range have been achieved.

• 한국광학회:학술대회논문집
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• 한국광학회 2001년도 하계학술발표회
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• pp.276-277
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• 2001

• 센서학회지
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• 제30권6호
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• pp.446-450
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• 2021

Non-dispersive infrared (NDIR) gas sensors typically use an optical filter that transmits a discriminating 4.26 ㎛ wavelength band to measure carbon dioxide (CO2), as CO2 absorbs 4.26 ㎛ infrared. The filter performance depends on the transmittance and full width at half maximum (FWHM). This paper presents the fabrication, sensitivity, and selectivity characteristics of a distributed Bragg reflector (DBR)-based Fabry-Perot filter with a simple structure for CO2 detection. Each Ge and SiO2 films were prepared using the RF magnetron sputtering technique. The transmittance characteristics were measured using Fourier-transform infrared spectroscopy (FT-IR). The fabricated filter had a peak transmittance of 59.1% at 4.26 ㎛ and a FWHM of 158 nm. In addition, sensitivity and selectivity experiments were conducted by mounting the sapphire substrate and the fabricated filter on an NDIR CO2 sensor measurement system. When measuring the sensitivity, the concentration of CO2 was observed in the range of 0-10000 ppm, and the selectivity was measured for environmental gases of 1000 ppm. The fabricated filter showed lower sensitivity to CO2 but showed higher selectivity with other gases.