• 제목/요약/키워드: Dissipation Factor

검색결과 394건 처리시간 0.023초

Effects of Chamber Pressure on Dielectric Properties of Sputtered MgTiO3 Films for Multilayer Ceramic Capacitors

  • Park, Sang-Shik
    • 한국재료학회지
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    • 제20권7호
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    • pp.374-378
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    • 2010
  • $MgTiO_3$ thin films were prepared by r.f. magnetron sputtering in order to prepare miniaturized NPO type MLCCs. $MgTiO_3$ films showed a polycrystalline structure of ilmenite characterized by the appearance of (110) and (202) peaks. The intensity of the peaks decreased with an increase in the chamber pressure due to the decrease of crystallinity which resulted from the decrease of kinetic energy of the sputtered atoms. The films annealed at $600^{\circ}C$ for 60min. showed a fine grained microstructure without micro-cracks. The grain size and roughness of the $MgTiO_3$ films decreased with the increase of chamber pressure. The average surface roughness was 1.425~0.313 nm for $MgTiO_3$ films prepared at 10~70 mTorr. $MgTiO_3$ films showed a dielectric constant of 17~19.7 and a dissipation factor of 2.1~4.9% at 1MHz. The dielectric constant of the films is similar to that of bulk ceramics. The dielectric constant and the dissipation factor decreased with the increase of the chamber pressure due to the decrease of grain size and crystallinity. The leakage current density was $10^{-5}\sim10^{-7}A/cm^2$ at 200kV/cm and this value decreased with the increase of the chamber pressure. The small grain size and smooth surface microstructure of the films deposited at high chamber pressure resulted in a low leakage current density. $MgTiO_3$ films showed a near zero temperature coefficient and satisfied the specifications for NPO type materials. The dielectric properties of the $MgTiO_3$ thin films prepared by sputtering suggest the feasibility of their application for MLCCs.

$Pr_{6}O_{11}$계 ZnO 바리스터의 전기적 성질에 소결온도의 영향 (Effect of Sintering Temperature on Electrical Properties of $Pr_{6}O_{11}$-Based ZnO Varistors)

  • 남춘우;류정선
    • 한국전기전자재료학회논문지
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    • 제14권7호
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    • pp.572-577
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    • 2001
  • The electrical properties of Pr$_{6}$ O$_{11}$ -based ZnO varistors consisting of ZnO-Pr$_{6}$ O$_{11}$ -CoO-Cr$_2$O$_3$-Er$_2$O$_3$ ceramics were investigated with sintering temperature in the range of 1325~f1345$^{\circ}C$. As sintering temperature is raised., the nonlinear exponent was increased up to 1335$^{\circ}C$, reaching a maximum 70.53, whereas raising sintering temperature further caused it to decrease, reaching a minimum 50.18 and the leakage current was in the range of 1.92~4.12 $\mu$A. The best electrical properties was obtained from the varistors sintered at 1335$^{\circ}C$, exhibiting a maximum (70.53) in the nonlinear exponent and a minimum (1.92 $\mu$A) in the leakage current, and a minimum (0.035) in the dissipation factor. On the other hand, the donor concentration was in the range of (0.90~1.14)x10$^{18}$ cm$^{-3}$ , the density of interface states was in the range of (2.69~3.60)x10$^{12}$ cm$^{-2}$ , and the barrier height was in the range of 0.77~1.21 eV with sintering temperature. With raising sintering temperature, the variation of C-V characteristic parameters exhibited a mountain type, reaching maximum at 134$0^{\circ}C$. Conclusively, it was found that the V-I, C-V, and dielectric characteristics of Pr$_{6}$ O$_{11}$ -based ZnO varistors are affected greatly by sintering temperature.

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소결시간에 따른 ZPCCD계 바리스터의 전기적 특성 및 안정성 (Electrical Properties and Stability of ZPCCD-Based Varistors with Sintering Time)

  • 남춘우;박종아;유대훈;서형권
    • 한국세라믹학회지
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    • 제42권7호
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    • pp.490-496
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    • 2005
  • The electrical properties and stability of the varistors composed of ZnO-Pr$_{6}$O$_{11}$-CoO-Cr$_{2}$O$_{3}$-Dy$_{2}$O$_{3}$ system were investigated with sintering time in the range of 1$\~$3 h at 1350$^{\circ}C$ . As the sintering time was increased, the varistor voltage and leakage current increased, but the nonlinear exponent decreased. The varistors sintered for 1 h exhibited excellent nonlinearity, with a nonlinear exponent of 55.3 and a leakage current of 0.1 $\mu$A, whereas presented relatively low stability. The varistors sintered for 2 h exhibited not only high nonlinear exponent of 46.3, low leakage current of 0.3 $\mu$A, low dielectric dissipation factor of 0.0431, but also the highest stability, in which the variation rates of varistor voltage, nonlinear exponent, leakage current, dielectric constant, and dielectric dissipation factor were -3.0$\%$, -4.1$\%$, +3056.2$\%$, +5.1$\%$, and -12.5$\%$, respectively, after DC accelerated aging stress state of 0.95 V$_{1ma}$/150$^{\circ}C$/24 h. On the whole, the nonlinearity and stability of these varistors are greatly affected by the sintering time.

펄스 레이저 증착법으로 제작된 Bi2O3-MgO-ZnO-Nb2O5 박막의 제작 및 특성 분석 (Fabrication and Characterization of Bi2O3-MgO-ZnO-Nb2O5 Thin Films by Pulsed Laser Deposition)

  • 배기열;이동욱;;이원재;배윤미;신병철;윤순길
    • 한국전기전자재료학회논문지
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    • 제23권3호
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    • pp.211-215
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    • 2010
  • Pulsed laser deposition is a very efficient technique for fabricating thin films of complex compounds. In the present work, $Bi_2O_3$-MgO-ZnO-$Nb_2O_5$ (BMZN) pyrochlore thin films were deposited on platinized Si substrates at various temperatures by using pulsed laser deposition technique. These films have been characterized by X-ray diffractometer (XRD), atomic force microscopy (AFM) to investigate their structural, morphological properties. MIM structure was manufactured to analyze di-electrical properties of BMZN thin films. XRD results reveal the thin films deposited at less than $400^{\circ}C$ show only amorphous phase, the crystallized thin films was observed when the thin films were prepared temperature at above $500^{\circ}C$. From AFM, it was known that the thin film grown at $400^{\circ}C$ is the densest. Dielectric constant increased with increasing temperature up to $400^{\circ}C$ at 100 kHz and dramatically decreased at the higher temperature. A aspect of dissipation factor was the exact opposite of dielectric constant. BMZN thin films grown at $400^{\circ}C$ exhibited a high dielectric constant of 60.9, a low dissipation factor of 0.007 at 100 kHz.

Preparation and Properties of Y2O3-Doped ZrO2 Films on Etched Al Foil by Sol-Gel Process

  • Chen, Fei;Park, Sang-Shik
    • 한국재료학회지
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    • 제25권2호
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    • pp.107-112
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    • 2015
  • The oxide films formed on etched aluminum foils play an important role as dielectric layers in aluminum electrolytic capacitors. $Y_2O_3$-doped $ZrO_2$ (YZ) films were coated on the etched aluminum foils by sol-gel dip coating, and the electrical properties of YZ-coated Al foils were characterized. YZ films annealed at $450^{\circ}C$ were crystallized into a cubic phase, and as the $Y_2O_3$ doping content increased, the unit cell of $ZrO_2$ expanded and the grain size decreased. The etch pits of Al foils were filled by YZ sol when it dried at atmospheric pressure after repeating for several times, but this step could essentially be avoided when being dried in a vacuum. YZ-coated foils indicated that the specific capacitance and dissipation factor were $2-2.5{\mu}F/cm^2$ and 2-4 at 1 kHz, respectively, and the leakage current and withstanding voltage of films approximately 200 nm thick were $5{\times}10^{-4}A$ at 21 V and 22 V, respectively. After being anodized at 500 V, the foils exhibited a specific capacitance and dissipation factor of $0.6-0.7{\mu}F/cm^2$ and 0.1-0.2, respectively, at 1 kHz, while the leakage current and withstanding voltage were $2{\times}10^{-4}-3{\times}10^{-5}A$ at 400 V and 420-450 V, respectively. This suggests that YZ film is a promising dielectric that can be used in high voltage Al electrolytic capacitors.

Analysis of Insulation Quality in Large Generator Stator Windings

  • Kim, Hee-Dong;Kong, Tae-Sik;Ju, Young-Ho;Kim, Byong-Han
    • Journal of Electrical Engineering and Technology
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    • 제6권3호
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    • pp.384-390
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    • 2011
  • To evaluate the condition of stator winding insulation in generators that have been operated for a long period of time, diagnostic tests were performed on the stator bars of a 500 MW, 22 kV generator under accelerated thermal and electrical aging procedures. The tests included measurements of AC current (${\Delta}I$), dissipation factor ($tan{\delta}$), partial discharge (PD) magnitude, and capacitance (C). In addition, the AC current test was performed on the stator winding of a 350 MW, 24 kV generator under operation to confirm insulation deterioration. The values of ${\Delta}I$, ${\Delta}tan{\delta}$, and PD magnitude in one stator bar indicated serious insulation deterioration. In another stator bar, the ${\Delta}I$ measurements showed that the insulation was in good condition, whereas the values of ${\Delta}tan{\delta}$ and PD magnitude indicated an incipient stage of insulation deterioration. Measurements of ${\Delta}I$ and PD magnitude in all three phases (A, B, C) of the remaining generator stator windings showed that they were in good condition, although the ${\Delta}tan{\delta}$ measurements suggested that the condition of the insulation should be monitored carefully. Overall analysis of the results suggested that the generator stator windings were in good condition. The patterns of PD magnitude in all three phases (A, B, C) were attributed to internal discharge.

고에너지밀도 캐패시터를 위해 PET 기판에 증착한 TiO2 박막의 특성 (Properties of TiO2 Thin Films Deposited on PET Substrate for High Energy Density Capacitor)

  • 박상식
    • 한국재료학회지
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    • 제22권8호
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    • pp.409-415
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    • 2012
  • $TiO_2$ thin films for high energy density capacitors were prepared by r.f. magnetron sputtering at room temperature. Flexible PET (Polyethylene terephtalate) substrate was used to maintain the structure of the commercial film capacitors. The effects of deposition pressure on the crystallization and electrical properties of $TiO_2$ films were investigated. The crystal structure of $TiO_2$ films deposited on PET substrate at room temperature was unrelated to deposition pressure and showed an amorphous structure unlike that of films on Si substrate. The grain size and surface roughness of films decreased with increasing deposition pressure due to the difference of mean free path. X-ray photoelectron spectroscopy (XPS) analysis revealed the formation of chemically stable $TiO_2$ films. The dielectric constant of $TiO_2$ films was significantly changed with deposition pressure. $TiO_2$ films deposited at low pressure showed high dissipation factor due to the surface microstructure. The dielectric constant and dissipation factor of films deposited at 70 mTorr were found to be 100~120 and 0.83 at 1 kHz, respectively. The temperature dependence of the capacitance of $TiO_2$ films showed the properties of class I ceramic capacitors. $TiO_2$ films deposited at 10~30 mTorr showed dielectric breakdown at applied voltage of 7 V. However, the films of 500~300 nm thickness deposited at 50 and 70 mTorr showed a leakage current of ${\sim}10^{-8}{\sim}10^{-9}$ A at 100 V.

차단기용 PTFE의 전기적 특성 (Electrical Properties of PTFE for Circuit Breaker)

  • 박효열;강동필;안명상;이태희;명인혜;이태주
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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    • pp.204-207
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    • 2003
  • This paper presents the electrical properties of PTFE (polytetrafluoroethylene) nozzle for circuit breaker. PTFE has been used widely as a nozzle material for circuit breaker. In the arcing environment in a circuit breaker, radiation is considered to be the major energy transport mechanism from the arc to the wall. The fraction of the radiation power is emitted out of the arc and reaches the nozzle wall, causing ablation at the surface and in the depth of the wall. The energy concentration in the material lead to the depolymerization and eventually lead to the generation of decomposed gas as well as some isolated carbon particles. The generation of the decomposed gas in the depth of the material causes inner explosion. The surface of nozzle becomes uneven. The flow of gas is not uniform due to the unevenness of the surface. Adding some fillers into PTFE is expected to be efficient for improving the endurability against radiation. In this experiment, three kinds of fillers that have endurance in the high temperature environment were added into PTFE. Dielectric constant, dissipation factor, electrical resistivity and dielectric strength of PTFE composites were investigated.

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Behavior of fully- connected and partially-connected multi-story steel plate shear wall structures

  • Azarafrooza, A.;Shekastehband, B.
    • Structural Engineering and Mechanics
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    • 제76권3호
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    • pp.311-324
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    • 2020
  • Until now, a comparative study on fully and partially-connected steel shear walls leading to enhancing strength and stiffness reduction of partially-connected steel plate shear wall structures has not been reported. In this paper a number of 4-story and 8-story steel plate shear walls, are considered with three different connection details of infill plate to surrounding frame. The specimens are modeled using nonlinear finite element method verified excellently with the experimental results and analyzed under monotonic loading. A comparison between initial stiffness and shear strength of models as well as percentage of shear force by model boundary frame and infill plate are performed. Moreover, a comparison between energy dissipation, ductility factor and distribution of Von-Mises stresses of models are presented. According to the results, the initial stiffness, shear resistance, energy dissipation and ductility of the models with beam-only connected infill plates (SSW-BO) is found to be about 53%, 12%, 15% and 48% on average smaller than those of models with fully-connected infill plates (SPSW), respectively. However, performance characteristics of semi-supported steel shear walls (SSSW) containing secondary columns by simultaneously decreasing boundary frame strength and increasing thickness of infill plates are comparable to those of SPSWs. Results show that by using secondary columns as well as increasing thickness of infill plates, the stress demands on boundary frame decreases substantially by as much as 35%. A significant increase in infill plate share on shear capacity by as much as 95% and 72% progress for the 4-story SSW-BO and 8-story SSSW8, respectively, as compared with non-strengthened counterparts. A similar trend is achieved by strengthening secondary columns of 4-story SSSW leading to an increase of 50% in shear force contribution of infill plate.

Cyclic testing of scaled three-story special concentrically braced frame with strongback column

  • Chen, Chui-Hsin;Tsai, Yi-Rung;Tang, Yao
    • Earthquakes and Structures
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    • 제17권2호
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    • pp.163-173
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    • 2019
  • For Special Concentrically Braced Frame (SCBF), it is common that the damage concentrates at a certain story instead of spreading over all stories. Once the damage occurs, the soft-story mechanism is likely to take place and possibly to result in the failure of the whole system with more damage accumulation. In this study, we use a strongback column which is an additional structural component extending along the height of the building, to redistribute the excessive deformation of SCBF and activate more structural members to dissipate energy and thus avoid damage concentration and improve the seismic performance of SCBF. We tested one-third-scaled, three-story, double-story X SCBF specimens with static cyclic loading procedure. Three specimens, namely S73, S42 and S0, which represent different combinations of stiffness and strength factors ${\alpha}$ and ${\beta}$ for the strongback columns, were designed based on results of numerical simulations. Specimens S73 and S42 were the specimens with the strongback columns, and S0 is the specimen without the strongback column. Test results show that the deformation distribution of Specimen S73 is more uniform and more brace members in three stories perform nonlinearly. Comparing Drift Concentration Factor (DCF), we can observe 29% and 11% improvement in Specimen S73 and S42, respectively. This improvement increases the nonlinear demand of the third-story braces and reduces that of the first-story braces where the demand used to be excessive, and, therefore, postpones the rupture of the first-story braces and enhances the ductility and energy dissipation capacity of the whole SCBF system.