• Bulletin of the Korean Chemical Society
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• 제13권5호
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• pp.520-526
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• 1992

The intramolecular fundamental vibrations of $CH_3CN$ trapped in solid argon matrix have been reinvestigated by means of FT-IR spectroscopy in the spectral range of 4000-500 $cm^{-1}$. By employing a quantum detector, infrared spectra could be obtained at matrix to solute ratio of 10000, allowing the clarification of the peaks due to monomeric species more clearly. Temperature controlled diffusion was initiated to identify the dimeric and polymeric species in terms of difference spectra. The assignments of monomeric and dimeric species are found, in general, to agree with the earlier work performed at higher concentration (Ar/$CH_3CN$ = 1500) using a dispersive spectrometer. Nonetheless the difficulty of minute differences between the earlier infrared and Raman spectroscopic results could be resolved. Moreover, the previously unnotified peaks due to polymeric species have been identified.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.239-240
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• 2008

As semiconductor devices are scaled down for better performance and more functionality, the Cu-based interconnects suffer from the increase of the resistivity of the Cu wires. The resistivity increase, which is attributed to the electron scattering from grain boundaries and interfaces, needs to be addressed in order to further scale down semiconductor devices [1]. The increase in the resistivity of the interconnect can be alleviated by increasing the grain size of electroplating (EP)-Cu or by modifying the Cu surface [1]. Another possible solution is to maximize the portion of the EP-Cu volume in the vias or damascene structures with the conformal diffusion barrier and seed layer by optimizing their deposition processes during Cu interconnect fabrication, which are currently ionized physical vapor deposition (IPVD)-based Ta/TaN bilayer and IPVD-Cu, respectively. The use of in-situ etching, during IPVD of the barrier or the seed layer, has been effective in enlarging the trench volume where the Cu is filled, resulting in improved reliability and performance of the Cu-based interconnect. However, the application of IPVD technology is expected to be limited eventually because of poor sidewall step coverage and the narrow top part of the damascene structures. Recently, Ru has been suggested as a diffusion barrier that is compatible with the direct plating of Cu [2-3]. A single-layer diffusion barrier for the direct plating of Cu is desirable to optimize the resistance of the Cu interconnects because it eliminates the Cu-seed layer. However, previous studies have shown that the Ru by itself is not a suitable diffusion barrier for Cu metallization [4-6]. Thus, the diffusion barrier performance of the Ru film should be improved in order for it to be successfully incorporated as a seed layer/barrier layer for the direct plating of Cu. The improvement of its barrier performance, by modifying the Ru microstructure from columnar to amorphous (by incorporating the N into Ru during PVD), has been previously reported [7]. Another approach for improving the barrier performance of the Ru film is to use Ru as a just seed layer and combine it with superior materials to function as a diffusion barrier against the Cu. A RulTaN bilayer prepared by PVD has recently been suggested as a seed layer/diffusion barrier for Cu. This bilayer was stable between the Cu and Si after annealing at $700^{\circ}C$ for I min [8]. Although these reports dealt with the possible applications of Ru for Cu metallization, cases where the Ru film was prepared by atomic layer deposition (ALD) have not been identified. These are important because of ALD's excellent conformality. In this study, a bilayer diffusion barrier of Ru/TaCN prepared by ALD was investigated. As the addition of the third element into the transition metal nitride disrupts the crystal lattice and leads to the formation of a stable ternary amorphous material, as indicated by Nicolet [9], ALD-TaCN is expected to improve the diffusion barrier performance of the ALD-Ru against Cu. Ru was deposited by a sequential supply of bis(ethylcyclopentadienyl)ruthenium [Ru$(EtCp)_2$] and $NH_3$plasma and TaCN by a sequential supply of $(NEt_2)_3Ta=Nbu^t$ (tert-butylimido-trisdiethylamido-tantalum, TBTDET) and $H_2$ plasma. Sheet resistance measurements, X-ray diffractometry (XRD), and Auger electron spectroscopy (AES) analysis showed that the bilayer diffusion barriers of ALD-Ru (12 nm)/ALD-TaCN (2 nm) and ALD-Ru (4nm)/ALD-TaCN (2 nm) prevented the Cu diffusion up to annealing temperatures of 600 and $550^{\circ}C$ for 30 min, respectively. This is found to be due to the excellent diffusion barrier performance of the ALD-TaCN film against the Cu, due to it having an amorphous structure. A 5-nm-thick ALD-TaCN film was even stable up to annealing at $650^{\circ}C$ between Cu and Si. Transmission electron microscopy (TEM) investigation combined with energy dispersive spectroscopy (EDS) analysis revealed that the ALD-Ru/ALD-TaCN diffusion barrier failed by the Cu diffusion through the bilayer into the Si substrate. This is due to the ALD-TaCN interlayer preventing the interfacial reaction between the Ru and Si.

• Journal of Electrochemical Science and Technology
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• 제11권3호
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• pp.291-309
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• 2020

Chromium was electrodeposited from deep eutectic solvents-based Cr³⁺ electrolytes on HB-pencil graphite electrode. Factors influencing the electrochemical behavior and the processes of Cr nucleation and growth were explored using cyclic voltammetry and chronoamperometry techniques, respectively. Cr³⁺ reduction was found to occur through an irreversible diffusion-controlled step followed by another irreversible one of impure diffusional behaviour. The reduction behavior was found to be greatly affected by Cr³⁺ concentration, temperature, and type of hydrogen bond donor used in deep eutectic solvents (DESs) preparation. A more comprehensive model was suggested and successfully applied to extract a consistent data relevant to Cr nucleation kinetics from the experimental current density transients. The potential, the temperature, and the hydrogen bond donor type were estimated to be critical factors controlling Cr nucleation. The nucleation and growth processes of Cr from either choline chloride/ethylene glycol (EG-DES) or choline chloride/urea (U-DES) deep eutectic solvents were evaluated at 70℃ to be three-dimensional (3D) instantaneous and diffusion-controlled, respectively. However, the kinetics of Cr nucleation from EG-DES was found to be faster than that from U-DES. Cr nucleation was tending to be instantaneous at higher temperature, potential, and Cr³⁺ concentration. Cr nuclei electrodeposited from EG-DES were characterized at different conditions using scanning electron microscope (SEM). SEM images show that high number density of fine spherical nuclei of almost same sizes was nearly obtained at higher temperature and more negative potential. Energy dispersive spectroscopy (EDS) analysis confirms that Cr deposits were obtained.

• 대한치과보철학회지
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• 제27권2호
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• pp.219-248
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• 1989

The purposes of this study were to analyze the microstructural and compositional changes of metal surfaces following different conditions of preoxidizing heat treatment, to investigate the composition of metal oxides, and to evaluate the effect of preoxidation and removal of surface oxides on microstructure and diffusion profiles. The techniques of EDAX (energy-dispersive analysis of x-ray), ESCA (electron spectroscopy for chemical analysis), and EPMA (electron probe micro analysis) were used, along with SEM (scanning electron microscopy). The obtained results were as follows : 1. A surface of the specimen became rough and the amount of the metal oxides increased with increasing the heat treatment time and temperature and the partial pressure of oxygen. 2. At an air pressure of 28' vacuum, the higher the temperature and the longer the time of preoxidation, the higher Ni concentration was detected. 3. Cr concentration in the specimen heat treated with air was higher than that of with vacuum. 4. The oxides in the specimens were mainly composed of Ni and Cr oxides. On the globular growth particles, significant rises in Al concentration of Rexillium III and Ti concentration of Verabond were noted. 5. Atomic diffusion occurred at the ceramic-metal interface, furthermore the amount of the flux was increased with preoxidation heat treatment.

• 한국표면공학회지
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• 제40권1호
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• pp.23-31
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• 2007

The objective of this study is to investigate the effect of Al addition on the reaction behavior of cobalt with molten zinc. Pure cobalt specimen was immersion tested in the three kinds of molten zinc (pure, 0.12%Al added and 0.24%Al added) baths at $460^{\circ}C,\;490^{\circ}C\;and\;520^{\circ}C$. For the understanding of degradation processes, specimens were analyzed with scanning electron microscope (SEM) and energy dispersive spectrum (EDS), and electrochemical stripping method. When 0.12% and 0.24% Al was added in molten zinc baths, three intermetallic compounds layers of ${\gamma},\;{\gamma}_1,\;and\;{\gamma}_2$ were formed on the Co matrix and ${\beta}_1$ layer was not formed between the Co matrix and the ${\gamma}$ layer. Particles of CoAl intermetallic compound were formed at the interface between the ${\gamma}_2$ layer and zinc melt and they did not adhere to the Co-Zn intermetallic layer. Weight loss of the Co specimen increased as Al content in the molten zinc increased and the relationship of weight loss vs. immersion time followed parabolic rate law. Rate controlling process for the reaction rate of Co with Al added molten zinc was analyzed as the diffusion process of Al atom through a boundary layer between the ${\gamma}_2$ layer and the Al added zinc melt.

• 한국산업보건학회지
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• 제26권2호
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• pp.188-197
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• 2016

Objectives: The purpose of this study was to evaluate the ozone exposure levels and the variations in ozone concentration in a semiconductor fabrication facility and office in relation to the ozone concentration in the outdoor air. Methods: This study was performed in an office, semiconductor fabrication facility(such as etching, diffusion, diffusion plenum), and outdoors from June to August, 2015. Measurements were taken six times at the same places using an active sampler(pumped) and real-time equipment. Ozone monitoring by the active sampler method and analysis were carried out by OSHA Method ID-214. Real-time measurement was carried out by ozone measuring equipment using a non-dispersive ultraviolet absorption method. Results: Ozone concentrations in the semiconductor fabrication facility and office were 0.7~7.1 ppb in area samples and 0.72~4.07 ppb in real-time measurement, which were 0.88~8.88% of the occupational exposure limit. The concentration of ozone generated by a laser printer in the office was less than 2 ppb. There was not a significant difference between ozone concentrations before and after using the laser printer. The indoor/outdoor concentration ratio(I/O ratio) in the semiconductor fabrication facility and office was 0.05 and 0.06, respectively. Conclusions: All the samples contained ozone levels lower than the occupational exposure limit and it was confirmed that the concentration of outdoor ozone had no significant effect on indoor ozone concentration.

• Carbon letters
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• 제12권3호
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• pp.143-151
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• 2011

Bagasse fly ash (BFA) is one of the important wastes generated in the sugar industry; it has been studied as a prospective low-cost adsorbent in the removal of congo red (CR) from aqueous solutions. Chemical treatment with $H_2O_2$ was applied in order to modify the adsorbability of the raw BFA. Batch studies were performed to evaluate the influence of various experimental parameters such as dye solution pH, contact time, adsorbent dose, and temperature. Both the adsorbents were characterized by Fourier-transform infrared spectrometer, energy-dispersive X-ray spectrophotometer and nitrogen adsorption at 77 K. Equilibrium isotherms for the adsorption of CR were analyzed by Langmuir, Freundlich and Temkin models using non-linear regression technique. Intraparticle diffusion seems to control the CR removal process. The obtained experimental data can be well described by Langmuir and also followed second order kinetic models. The calculated thermodynamic parameters indicate the feasibility of the adsorption process for the studied adsorbents. The results indicate that BFA can be efficiently used for the treatment of waste water containing dyes.

• Journal of Magnetics
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• 제19권4호
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• pp.333-339
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• 2014

Single crystal growth of $BaFe_{12}O_{19}$ by the solid state crystal growth method was attempted. Seed crystals of ${\alpha}-Fe_2O_3$ were pressed into pellets of $BaFe_{12}O_{19}$ + 2 wt% $BaCO_3$ and heat-treated at temperatures between $1150^{\circ}C$ and $1250^{\circ}C$ for up to 100 hours. Instead of single crystal growth taking place on the seed crystal, BaO diffused into the seed crystal and reacted with it to form a polycrystalline reaction layer of $BaFe_{12}O_{19}$. The microstructure, chemical composition and structure of the reaction layer were studied using scanning electron microscopy-energy dispersive spectroscopy (SEM-EDS), x-ray Diffraction (XRD) and micro-Raman scattering and confirmed to be that of $BaFe_{12}O_{19}$. XRD showed that the reaction layer shows a strong degree of orientation in the (h00)/(hk0) planes in the sample sintered at $1200^{\circ}C$. $BaFe_{12}O_{19}$ layers with a degree of orientation in the (hk0) planes could also be grown by heat-treating an ${\alpha}-Fe_2O_3$ seed crystal buried in $BaCO_3$ powder.

• 한국초전도ㆍ저온공학회논문지
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• 제7권4호
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• pp.1-3
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• 2005

Superconducting $MgB_2$ fibers are in-situ grown by a diffusion method. The fibers are prepared by exposing B filaments to Mg vapor inside a folded Ta foil over a wide range of temperature and growth time. The materials are sealed inside a quartz tube by gas welding. The as - grown fibers are characterized by scanning electron microscopy and energy dispersive x - ray analysis. The fibers have a diameter of about $110{\mu}m$. Surface morphology of the fibers looks dependent on growth temperature and mixing ratio of Mg and B. Radial distribution of Mg ions into B is observed and analyzed over the cross - sectional area. Transport properties of the $MgB_2$ fibers are examined by a physical property measurement system. The $MgB_2$ fibers grown at $900^{\circ}C$ for 2 hours show a superconducting transition at 39.8K with ${\Delta}T_c<$ 2.0 K. Resistance at room temperature $MgB_2$ is 3.745 $\Omega$ and residual resistivity ratio (RRR) is estimated as 4.723.

• Korean Membrane Journal
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• 제6권1호
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• pp.55-60
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• 2004

In recent years, an increasing interest in membrane technology has been observed in chemical and environmental industry. Membrane technology has advantages of low cost, energy saving and environmental clean technology comparing to conventional separation processes. Pervaporation is one of new advanced membrane technology applied for separation of azeotropic mixtures, aqueous organic mixtures, organic solvent and petrochemical mixtures. Sodium alginate composite membranes were prepared for the enhancement of long-term stability of pervaporation performance of water-ethanol mixture using pervaporation. Sodium alginate membranes were crosslinked with CaCl$_2$ and coated with polyelectrolyte chitosan to protect washing out of calcium ions from the polymer. The surface structures of PAN and hydrolysed PAN membrane were confirmed by ATR Fourier transform infrared (FT-IR). A field emission scanning electron microscopy (FE-SEM; Jeol 6340F) operated at 15 kV. Concentration profiles for Ca in the membrane surface and membrane cross-section were taken by an energy dispersive X-ray (EDX) analyser (Jeol) attached to the field emission scanning electron microscopy (Jeol 6340F). Pervaporation experiments were done with several operation run times to investigate long-term stability of the membranes.