• Proceedings of the Korean Society for Technology of Plasticity Conference
• /
• 2001.10a
• /
• pp.186-189
• /
• 2001

The main method in micro-etching process, used in manufacturing semiconductors, electronic components, circuits, is Photo Masking method that exposes and develops on the photo-sensitivity solutions or films. This method enables one to process highly precisely, $\pm$0.03 mm in end line location area. But this has limits in a high speed / wide width process, difficulties in endless masking, and the problem of high price. We have developed the direct masking method to make use of Gravure printing, widely used in grocery packing sheet printing. We made cylinder tools to influence the masking quality by laser stream process. We have confirmed that the end line location accuracy in the line width of the product is improved from 0.12 mm to $\pm$0.07 mm level, after etching process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.07a
• /
• pp.741-744
• /
• 2001

This paper described on the fabrication of microstructures by DRIE(Deep Reactive Ion Etching). SOI(Si-on-insulator) electric devices with buried cavities are fabricated by SDB technology and electrochemical etch-stop. The cavity was fabricated the upper handling wafer by Si anisotropic etch technique. SDB process was performed to seal the fabricated cavity under vacuum condition at -760 mm Hg. In the SDB process, captured air and moisture inside of the cavities were removed by making channels towards outside. After annealing(1000$^{\circ}C$, 60 min.), the SDB SOI structure was thinned by electrochemical etch-stop. Finally, it was fabricated microstructures by DRIE as well as a accurate thickness control and a good flatness.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.07b
• /
• pp.739-742
• /
• 2002

This paper described on the fabrication of microstructures by DRIE(deep reactive ion etching). SOI(Si-on-insulator) electric devices with buried cavities are fabricated by SDB technology and electrochemical etch-stop. The cavity was fabricated the upper handling wafer by Si anisotropic etch technique. SDB process was performed to seal the fabricated cavity under vacuum condition at -760 mmHg. In the SDB process, captured air and moisture inside of the cavities were removed by making channels towards outside. After annealing($1000^{\circ}C$, 60 min.), The SDB SOI structure was thinned by electrochemical etch-stop. Finally, it was fabricated microstructures by DRIE as well as an accurate thickness control and a good flatness.

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 2003.06a
• /
• pp.219-222
• /
• 2003

Self-Assembled Monolayers(SAMs) by alkanethiol adsorption to thin metal film are widely being investigated for applications as coating layer for anti-stiction or friction reduction and in fabrication of micro structure of molecular and bio molecular. Recently, there have been many researches on micro patterning using the advantages of very thin thickness and etching resistance in selective etching of thin metal film of Self- Assembled Monolayers. In this report, we present the micromachining thin metal film by Mask-Less laser patterning of alknanethiolate Self-Assembled Monolayers.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.163.2-163.2
• /
• 2014

We report catalytic decomposition of few-layer graphene on an $Au/SiO_x/Si$ surface wherein oxygen is supplied by dissociation of the native $SiO_x$ layer at a relatively low temperature of $400^{\circ}C$. The detailed chemical evolution of the graphene covered $SiO_x/Si$ surface with and without gold during the catalytic process is investigated using a spatially resolved photoelectron emission method. The oxygen atoms from the native $SiO_x$ layer activate the gold-mediated catalytic decomposition of the entire graphene layer, resulting in the formation of direct contact between the Au and the Si substrate. The notably low contact resistivity found in this system suggests that the catalytic depletion of a $SiO_x$ layer could realize a new way to micromanufacture high-quality electrical contact.

• Journal of the Korean Society for Precision Engineering
• /
• v.17 no.11
• /
• pp.191-198
• /
• 2000

Laser direct patterning of the coated photoresist (PMER-NSG31B) layer was studied to make halftone dots on gravure printing roll. The selective laser hardening of photoresist by Ar-ion laser(wavelength: 333.6~363.8nm) was controlled by the A/O modulator. The coating thickness in the range of 5~11$\mu m$ could be obtained by using the up-down directional moving device along the vertically located roll. The width, thickness and hardness of the hardened lines formed under the laser power of 200~260㎽ and irradiation time of 4.4~6.6 $\mu$sec/point were investigated after developing. The hardened width increased as the coating thickness increased. Though the hardened thickness was changed due to the effect of the developing solution, the hardened layer showed good resistance to the scratching of 2H pencil. Also, the hardened minimum line widths of 10$\mu m$ could be obtained. The change of line width was also found after etching, and the minimum line widths of 6$\mu m$ could be obtained. The hardened lines showed the good resistance to the etching solution. Finally, the experimental data could be applied to make gravure halftone dots using the developed imaging process, successfully.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2003.07a
• /
• pp.1164-1167
• /
• 2003

Recently CRT is getting flatted, As change of CRT trend from normal type to Flat type, the material of Shadow Mask was also changed from AK(Aluminum Killed) to Invar(Fe-Ni alloy) materials Until now we have used just AK(Aluminum Killed) for normal type TV(not flat type), but main raw material of shadow mask component was changed. . However recently Invar(Fe-Ni alloy) materials, which has advantage of Low Thermal Expansion and High Strength, has been developed as well as applying in mass production as CRT's trend has become more flat and fine pitch. As main raw material of shadow mask component was changed, conditions of process were changed. One of them, the importance of pre-etching process (assistant process for developing & etching) is improved because there are so many particles in the pre-etching bath because of Ni compounds. Since the solubility of Ni in pre-etching solvent is very low related to Fe's, so the compounds of Ni happen to make particles.(the solubility of Fe is twenty times Ni's) that particles happen to make process troubles and NG productions so to clear the particles we had to established high cost filtering system, but it is useless. As time goes by the quantity of particles (Ni compounds) was increased because of the capability of filtering system was not enough, the particles was produced continuous in bath, and it make quality problems. Hence we tried to develop the new pre-etching solution to remove the particles (Ni compounds) and to cost down the filtering system's running cost. But in improving the solution we discovered the new pre-etching solution made the PR developing better. In former solution there were three kinds of chemistry (COOH)2 , H2O2 , H2S04 .first the function of (COOH)2 is drilling the surface of Invar, during this mechanism Ni compounds occurred. Second the function of H202 is removing the PR fringe (half UV exposure zone on PR(PVA)), Third the function of H2S04 is the catalysis of (COOH)2 In those, (COOH)2 was the main reason to make the Ni compounds. So to improve the solutions we had to change (COOH)2 to the other material. the chemistry we improved was a complex chemistry based on H2S04 . after using this chemistry the particles problem was disappeared and there was another advantage cut down the PR fringe. The New solution made the function of H202 better so the PR developing improved. To be direct the catalyst of the new solution helped the H202. anyway First thing after change the solution the quality of shadow Mask for flat color TV was improved & the yield also improved. But the more important thing is how to control the new solution. So we accepted the new concept which was the degree of freshness. The degree of freshness is based on non-reacted solution which was 100% ( the degree of freshness) and calculated the melted Ni quantity as time goes by. So we made the gauging liner plot. In conclusion, many companies tried to make fine pitched Shadow Mask ,generally to make quality jump up it needed a lot of cost & persons .in this case the shift of core material made it possible.

• The Transactions of the Korean Institute of Electrical Engineers
• /
• v.43 no.6
• /
• pp.1036-1038
• /
• 1994

In this paper, a silicon piezoresistive accelerometer is designed and fabricated using a silicon direct bonded wafer. The accelerometer consists of a seismic mass and four cantilevers, and is fabricated mainly by the anisotropic etching method using EPW as an etchant. The measured sensitivity and the resonant frequency are 0.02 mV/V.g and 3.4 kHz, respectively. The nonlinearity is less than $\pm$0.3% of the full scale of the output.

• Korean Journal of Crystallography
• /
• v.1 no.2
• /
• pp.115-125
• /
• 1990

We have investigated bulk and hetero-epitaxial growth of GaAs single crystal. Various growth techniques such as HB, HZM, and VGF for high quality bulk GaAs were successfully developed by appling the specially designed DM(direct monitoring) furnace. Al GaAs/GaAs superlattice structure and In(x)Ga(1-x) As/GaAs epilayers were also grown by MOCVD and VPE, respectively. The characterization of GaAs single crystals and epilayers was made by X-ray diffraction, Hall effect, PL, chemical etching and angle lapping technique.

• Transactions on Electrical and Electronic Materials
• /
• v.1 no.1
• /
• pp.6-11
• /
• 2000

The hydrogen plasma treatment of silicon wafers in the reactive ion-etching mode was studied for the application to silicon-on-insulator wafers which were prepared using the wafer bonding technique. The chemical reactions of hydrogen plasma with surface were used for both surface activation and removal of surface contaminants. As a result of exposure of silicon wafers to the plasma, an active oxide layer was found on the surface. This layer was rendered hydrophilic. The surface roughness and morphology were examined as functions of the plasma exposing time and power. In addition, the surface became smoother with the shorter plasma exposing time and power. The value of initial surface energy estimated by the crack propagation method was 506 mJ/㎡, which was up to about three times higher as compared to the case of conventional direct using the wet RCA cleaning method.