• Proceedings of the Korean Nuclear Society Conference
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• 1996.11b
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• pp.506-511
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• 1996

Research on the dry etching of UO$_2$ by using fluorine containing gas plasma is carried out for DUPIC (Direct Use of spent PWR fuel In CANDU) process which is taken into consideration for potential future fuel cycle in Korea. CF$_4$/O$_2$ gas mixture is chosen for the reactant gas and the etching rates of UO$_2$ by the gas plasma are investigated as functions of substrate temperature, plasma gas pressure, CF$_4$/O$_2$ ratio, and plasma power, It is tentatively found that the etching rate can reach 1000 monolayers/min. and the optimum CF$_4$/O$_2$ ratio is around 4:1.

• Journal of Technologic Dentistry
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• v.29 no.2
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• pp.141-150
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• 2007

The purpose of this study was to ascertain the bonding durability of self-etching dentin bonding agents to dentin by means of shear bonding strength. Several acid-etching dentin bonding system (ESPE Z100) and self-etching dentin bonding systems (DEN-FIL, GRADIA DIRET) were used. The occlusion surface of human molars were ground flat to expose dentin and treated with the etch bonding system according to manufactures instruction and followed by composite resin application. After 24hours of storage at 37$^{\circ}C$, the shear bonding strength of the specimens was measured in a universal testing machine with a 1mm/min crosshead speed. An one-way analysis of variance and the scheffe test were performed to identify significant differences (p<0.05). The bonded interfacial surfaces and treated dentin surfaces were examined using a SEM. Through the analysis of shear bond strength data and micro-structures of dentin-resin interfaces, following results are obtained. In dentin group, the shear bond strength of DEN-FIL showed statistical superiority in comparison to the other groups and followed by ESPE Z100 and GRADIA DIRECT (p<0.05).

• Transactions on Electrical and Electronic Materials
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• v.12 no.4
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• pp.144-147
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• 2011

In this work, we present a study regarding the etching characteristics on titanium nitride (TiN) thin films using an inductively coupled plasma system. The TiN thin film was etched using a $N_2/BCl_3$/Ar plasma. The studied etching parameters were the gas mixing ratio, the radio frequency (RF) power, the direct current (DC)-bias voltages, and the process pressures. The baseline conditions were as follows: RF power = 500 W, DC-bias voltage = -150 V, substrate temperature = $40^{\circ}C$, and process pressure = 15 mTorr. The maximum etch rate and the selectivity of the TiN to the $SiO_2$ thin film were 62.38 nm/min and 5.7, respectively. The X-ray photoelectron spectroscopy results showed no accumulation of etching byproducts from the etched surface of the TiN thin film. Based on the experimental results, the etched TiN thin film was obtained by the chemical etching found in the reactive ion etching mechanism.

• Applied Chemistry for Engineering
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• v.34 no.4
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• pp.444-449
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• 2023

As electronic devices become smaller and more integrated, the demand for manufacturing thin, flexible printed circuit boards (FPCBs) has increased. Although FPCBs are conventionally manufactured by a photolithography method using dry film resist, this process is complicated, and the mask is specifically designed to obtain the precision of the desired circuit line width. In this regard, manufacturing FPCBs with fine patterns through the direct printing method of photocurable inks has gained growing attention. Since the manufacturing process of FPCBs is based on the direct printing method that includes etching and stripping processes utilizing acid and basic chemicals, controlling the adhesion strength, the etching resistance, and the strippability of photocured inks has drawn a lot of attention for the fabrication of fine patterns through photocurable inks. In this study, acrylic ink with various types and contents of the photoinitiator was prepared, and the curing behavior was analyzed. Also, the adhesion strength, etching resistance, and strippability were analyzed to evaluate the applicability of developed photocurable etching resist inks.

• Journal of the Korean Society for Precision Engineering
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• v.22 no.1
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• pp.199-206
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• 2005

Mask manufacturing is a high COC and COO process in developing of semiconductor devices because of mask production tool with high resolution. Direct writing has been thought to be the one of the patterning method to cope with development or small-lot production of the device. This study consists two categories. One is the additional process of the direct and maskless patterning generation using SLA for easy and convenient application and the other is a removal process using wet-etching process. In this study, cured status of epoxy pattern is most important parameter because of the beer-lambert law according to the diffusion of UV light. In order to improve the contact force between patterns and substrate, prime process was performed and to remove the semi-cured resin which makes a bad effects to the pattern, spin cleaning process using TPM was also performed. At a removal process, contact force between photo-curable resin as an etching mask and Si wafer is important parameter.

• Journal of the Korean Vacuum Society
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• v.3 no.2
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• pp.147-157
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• 1994

Valence or core electron excitations induced by Synchrotron radiation (SR) irradiation and ensuing chemical reactions can be applied for semiconductor processes i, e, deposition etching and modifications of thin film materials. Unique selectivity can be achieved by this photochemical reactions in deposition and etching. Some materials can be ecvaporated by SR irradiation which can be utilized for low temperature surface cleaning of thin films. Also SR irradiation significantly lowers the reaction temperature and photon activated surface reactions can be utilized for direct writing or projection lithography of electronic materials. This technique is especially effective in making nanoscale feature size with abrupt and well defined interfaces for next generation electronic devices.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.304-304
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• 2012

III-V 화합물 태양전지는 실리콘 등 다른 태양전지에 비해 1sun상 30% 이상의 고효율을 갖고 있고 direct bandgap과 높은 이동도 등의 물질특성과 3족과 5족의 비율 조절로 같은 결정구조에서 에너지 bandgap이 다른 물질들을 만들기에 용이하여 태양전지 스펙트럼의 넓은 영역을 흡수할 수 있는 장점이 있다. 그러나 셀 자체의 물질이 실리콘에 비하여 고가여서 고성능이 요구되는 우주 인공위성 등에 적용이 되었지만, 2000년대 이후로 집광에 적용 가능한 태양전지의 연구를 거듭하여 2005년부터는 값싼 프레넬 렌즈를 이용하여 1 sun에 비해 500배 해당하는 빛을 셀에 집광하여 보다 효율을 증가시킴으로써 지상발전용에도 적용 가능한 셀을 형성하게 되었다. 더불어 태양전지의 효율을 증가시키기 위한 다양한 구조적 변화의 시도도 많이 이루어지고 있다. 최근 실리콘 태양전지의 표면에 texture 구조를 주어 높은 흡수율과 낮은 반사율을 갖게 함으로써 효율을 증가시키는 사례가 많아지고, III-V 화합물 태양전지도 texturing에 의해 증가된 효율을 발표한바 있다. 본 연구에서는 III-V 화합물 InGaP 태양전지의 window층으로 사용되는 InAlP 층에 Metal-assisted chemical etching (mac etching) 방법으로 texture 구조를 형성하여 etching 시간에 따른 InAlP층의 표면 변화와 반사율의 변화를 분석하였다.

• Transactions on Electrical and Electronic Materials
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• v.12 no.3
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• pp.106-109
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• 2011

We investigated the etching characteristics of titanium nitride (TiN) thin film in $BCl_3$/Ar inductively coupled plasma. The etching parameters were the gas mixing ratio, radio frequency (RF) power, direct current (DC)-bias voltages and process pressures. The standard conditions were as follows: total flow rate = 20 sccm, RF power = 500 W, DC-bias voltage = -100 V, substrate temperature = $40^{\circ}C$, and process pressure = 15 mTorr. The maximum etch rate of TiN thin film and the selectivity of TiN to $Al_2O_3$ thin film were 54 nm/min and 0.79. The results of X-ray photoelectron spectroscopy showed no accumulation of etch byproducts from the etched surface of TiN thin film. The TiN film etch was dominated by the chemical etching with assistance by Ar sputtering in reactive ion etching mechanism, based on the experimental results.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.4
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• pp.261-268
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• 1999

Laser-induced thermochemical etching has been recognized as a new powerful method for processing a variety of materials, including metals, semiconductors, ceramics, insulators and polymers. This study presents characteristics of direct etching for Si substrate using focused argon ion laser beam in aqueous KOH and $CCl_2F_2$ gas. In order to determine process conditions, we first theoretically investigated the temperature characteristics induced by a CW laser beam with a gaussian intensity distribution on a silicon surface. Major process parameters are laser beam power, beam scan speed and reaction material. We have achieved a very high etch rate up to $434.7\mum/sec$ and a high aspect ratio of about 6. Potential applications of this laser beam etching include prototyping of micro-structures of MEMS(micro electro mechanical systems), repair of devices, and isolation of opto-electric devices.

• Transactions on Electrical and Electronic Materials
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• v.11 no.4
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• pp.174-177
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• 2010

We have developed an environment-friendly etching process, an alternative to the dichromic acid etching process, as a pretreatment of acrylonitrile-butadiene-styrene (ABS) plastic for electroless plating. In order to plate ABS plastic in an electroless way, there should be fine holes on the surface of the ABS plastic to enhance mechanically the adhesion strength between the plastic surface and the plate. To make these holes, the surface was coated uniformly with dispersed chemical foaming agents in a mixture of environmentally friendly dispersant and solvent by the methods of dipping or direct application. The solvent seeps into just below the surface and distributes the chemical foaming agents uniformly beneath the surface. After drying off the surface, the surface was heated at a temperature well below the glass transition temperature of ABS plastic. By pyrolysis, the chemical foaming agents made fine holes on the surface. In order to discover optimum conditions for the formation of fine holes, the mixing ratio of the solvent, the dispersant and the chemical foaming agent were controlled. After the etching process, the surface was plated with nickel. We tested the adhesion strength between the ABS plastic and nickel plate by the cross-cutting method. The surface morphologies of the ABS plastic before and after the etching process were observed by means of a scanning electron microscope.