• The Journal of the Korea institute of electronic communication sciences
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• v.12 no.6
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• pp.1027-1034
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• 2017

In this paper, we propose a new function embedding method that can measure mathematical projections of probability amplitude, probability, average expectation and matrix elements of stationary-state unit matrix at all control operation points of quantum gates. The function embedding method in this paper is to embed orthogonal normalization condition of probability amplitude for each control operating point into a binary scalar operator by using Dirac symbol and Kronecker delta symbol. Such a function embedding method is a very effective means of controlling the arithmetic power function of a unitary gate in a unitary transformation which expresses a quantum gate function as a tensor product of a single quantum. We present the results of evolutionary operation and projective measurement when we apply the proposed function embedding method to the ternary 2-qutrit cNOT gate and compare it with the existing methods.

• Progress in Medical Physics
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• v.10 no.1
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• pp.1-7
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• 1999

In this study, the dose distributions of a $^{32}$ p uniform cylindrical volume source and a surface source, a pure $\beta$emitter, were calculated in order to obtain information relevant to the utilization of a balloon catheter and a radioactive stent. The dose distributions of $^{32}$ p were calculated by means of the EGS4 code system. The sources are considered to be distributed uniformly in the volume and on the surface in the form of a cylinder with a radius of 1.5 mm and length of 20 mm. The energy of $\beta$particles emitted is chosen at random in the $\beta$ energy spectrum evaluated by the solution of the Dirac equation for the Coulomb potential. Liquid water is used to simulate the particle transport in the human body. The dose rates in a target at a 0.5mm radial distance from the surface of cylindrical volume and surface source are 12.133 cGy/s per GBq (0.449 cGy/s per mCi, uncertainty: 1.51%) and 24.732 cGy/s per GBq (0.915 cGy/s per mCi, uncertainty: 1.01%), respectively. The dose rates in the two sources decrease with distance in both radial and axial direction. On the basis of the above results, the determined initial activities were 29.69 mCi and 1.2278 $\mu$Ci for the balloon catheter and the radioactive stent using $^{32}$ P isotope, respectively. The total absorbed dose for optimal therapeutic regimen is considered to be 20 Gy and the treatment time in the case of the balloon catheter is less than 3 min. Absorbed doses in targets placed in a radial direction for the two sources were also calculated when it expressed initial activity in a 1 mCi/ml volume activity density for the cylindrical volume source and a 0.1 mCi/cm$^2$ area activity density for the surface source. The absorbed dose distribution around the $^{32}$ P cylindrical source with different size can be easily calculated using our results when the volume activity density and area activity density for the source are known.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.400-401
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• 2012

그래핀(Graphene)은 열 전도도가 높고 전자 이동도(200 000 cm2V-1s-1)가 우수한 전기적 특성을 가지고 있어 전계 효과 트랜지스터(Field effect transistor; FET), 유기 전자 소자(Organic electronic device)와 광전자 소자(Optoelectronic device) 같은 반도체 소자에 응용 가능하다. 그러나 에너지 밴드 갭이 없기 때문에 소자의 전기적 특성이 제한되는 단점이 있다. 최근에는 아크 방출(Arc discharge method), 화학적 기상 증착법(Chemical vapor deposition; CVD), 이온-조사법(Ion-irradiation) 등을 이용한 이종원자(Hetero atom)도핑과 화학적 처리를 이용한 기능화(Functionalization) 등의 방법으로 그래핀을 도핑 후 에너지 밴드 갭을 형성시키는 연구 결과들이 보고된 바 있다. 그러나 이러한 방법들은 표면이 균일하지 않고, 그래핀에 많은 결함들이 발생한다는 단점이 있다. 이러한 단점을 극복하기 위해 자가조립 단층막(Self-assembled monolayers; SAMs)을 이용하여 이산화규소(Silicon oxide; SiO2) 기판을 기능화한 후 그 위에 그래핀을 전사하면 그래핀의 일함수를 쉽게 조절하여 소자의 전기적 특성을 최적화할 수 있다. SAMs는 그래핀과 SiO2 사이에 부착된 매우 얇고 안정적인 층으로 사용된 물질의 특성에 따라 운반자 농도나 도핑 유형, 디락 점(Dirac point)으로부터의 페르미 에너지 준위(Fermi energy level)를 조절할 수 있다[1-3]. 본 연구에서는 SAMs한 기판을 이용하여 그래핀의 도핑 효과를 확인하였다. CVD를 이용하여 균일한 그래핀을 합성하였고, 기판을 3-Aminopropyltriethoxysilane (APTES)와 Borane-Ammonia(Borazane)을 이용하여 각각 아민 기(Amine group; -NH2)와 보론 나이트라이드(Boron Nitride; BN)로 기능화한 후, 그 위에 합성한 그래핀을 전사하였다. 기판 위에 NH2와 BN이 SAMs 형태로 존재하는 것을 접촉각 측정(Contact angle measurement)을 통해 확인하였고, 그 결과 NH2와 BN에 의해 그래핀에 도핑 효과가 나타난 것을 라만 분광법(Raman spectroscopy)과 X-선 광전자 분광법(X-ray photoelectron spectroscopy: XPS)을 이용하여 확인하였다. 본 연구 결과는 안정적이면서 패턴이 가능하기 때문에 그래핀을 기반으로 하는 반도체 소자에 적용 가능할 것이라 예상된다.

• Journal of Internet Computing and Services
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• v.19 no.3
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• pp.49-56
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• 2018

Euclidean distance (ED) between error distribution and Dirac delta function has been used as an efficient performance criterion in impulsive noise environmentsdue to the outlier-cutting effect of Gaussian kernel for error signal. The gradient of ED for its minimization has two components; $A_k$ for kernel function of error pairs and the other $B_k$ for kernel function of errors. In this paper, it is analyzed that the first component is to govern gathering close together error samples, and the other one $B_k$ is to conduct error-sample concentration on zero. Based upon this analysis, it is proposed to normalize $A_k$ and $B_k$ with power of inputs which are modified by kernelled error pairs or errors for the purpose of reinforcing their roles of narrowing error-gap and drawing error samples to zero. Through comparison of fluctuation of steady state MSE and value of minimum MSE in the results of simulation of multipath equalization under impulsive noise, their roles and efficiency of the proposed normalization method are verified.

• KEPCO Journal on Electric Power and Energy
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• v.1 no.1
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• pp.169-174
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• 2015

In this research, pristine graphene was synthesized using methane ($CH_4$) gas, and N-doped graphene was synthesized using pyridine ($C_5H_5N$) liquid source by chemical vapor deposition (CVD) method. Basic optical properties of both pristine and N-doped graphene were investigated by Raman spectroscopy and XPS (X-ray photoemission spectroscopy), and electrical transport characteristics were estimated by current-voltage response of graphene channel as a function of gate voltages. Results for CVD grown pristine graphene from methane gas show that G-peak, 2D-peak and C1s-peak in Raman spectra and XPS. Charge neutral point (CNP; Dirac-point) appeared at about +4 V gate bias in electrical characterization. In the case of pyridine based CVD grown N-doped graphene, D-peak, G-peak, weak 2D-peak were observed in Raman spectra and C1s-peak and slight N1s-peak in XPS. CNP appeared at -96 V gate bias in electrical characterization. These result show successful control of the property of graphene artificially synthesized by CVD method.

• Journal of Korean Philosophical Society
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• v.105
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• pp.269-290
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• 2008

The purpose of this paper is to explore the possibility of backwards causation. For study, this paper was divided into four views as follows: The first view was sometimes suggested by the people such as M. Dummett who distinguished observers from behaviors. According to observers' view, backwards causation is impossible, whereas behaviors' view possible. However, in a real or genuine sense, it is incorrect for us to argue for impossibility of backwards causation from the observer aspect. The second view was supported by J. H. Schmidt. He analyzed the possibility of backwards causation in terms of macro and micro level analysis about the causal events. According to micro level analysis, backwards causation is possible, but macro level analysis impossible. Usually the latter makes the former something miraculous. Under the macro level analysis, backwards causation, at first, seems to be miraculous phenomena which belongs to the micro level analysis. The third view had to do with physical equation, and the fourth view physical phenomena, respectively. John Earman argued for the backwards causation by the transformation from Lorentz­-Dirac equation to a second-order integro-differential one in the field of electrodynamic acceleration. His argument was criticized because of his misunderstanding about the relationship between two equations. On the other hand, Phil Dowe defended a version of Reichenbach's own theory about the direction of causation founded on the fork asymmetrical causal relation. However his view was different from Reichenbach's because the former defended the backwards causation model of Bell phenomena in quantum mechanics. On the contrary, Reichenbach put stressed on the priority of cause in the causal process. Subjectivism has recently been defended by H. Price, under the label of perspectivism. According to him, in a certain sense causal asymmetry is not in the world, but is rather a product of our own asymmetric perspective on the world. He also suggested causal net, the symmetry of microphysics, and so on. As mentioned above, there are many kind of suggestions of backwards causation. However none of them replaced objectively the main streams of the direction of causal process. The main stream has been usually defended by pragmatical ground. That is, effects do not precede their causes although causes cannot be without their effects.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.284-284
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• 2016

Topological insulator (TI) is a bulk-insulating material with topologically protected Dirac surface states in the band gap. In particular, $Bi_2Se_3$ attracted great attention as a model three-dimensional TI due to its simple electronic structure of the surface states in a relatively large band gap (~0.3 eV). However, experimental efforts using $Bi_2Se_3$ have been difficult due to the abundance of structural defects, which frequently results in the bulk conduction being dominant over the surface conduction in transport due to the bulk doping effects of the defect sites. One promising approach in avoiding this problem is to reduce the structural defects by heteroepitaxially grow $Bi_2Se_3$ on a substrate with a compatible lattice structure, while also preventing surface degradation by encapsulating the pristine interface between $Bi_2Se_3$ and the substrate in a clean growth environment. A particularly promising choice of substrate for the heteroepitaxial growth is hexagonal boron nitride (h-BN), which has the same two-dimensional (2D) van der Waals (vdW) layered structure and hexagonal lattice symmetry as $Bi_2Se_3$. Moreover, since h-BN is a dielectric insulator with a large bandgap energy of 5.97 eV and chemically inert surfaces, it is well suited as a substrate for high mobility electronic transport studies of vdW material systems. Here we report the heteroepitaxial growth and characterization of high quality topological insulator $Bi_2Se_3$ thin films prepared on h-BN layers. Especially, we used molecular beam epitaxy to achieve high quality TI thin films with extremely low defect concentrations and an ideal interface between the films and substrates. To optimize the morphology and microstructural quality of the films, a two-step growth was performed on h-BN layers transferred on transmission electron microscopy (TEM) compatible substrates. The resulting $Bi_2Se_3$ thin films were highly crystalline with atomically smooth terraces over a large area, and the $Bi_2Se_3$ and h-BN exhibited a clear heteroepitaxial relationship with an atomically abrupt and clean interface, as examined by high-resolution TEM. Magnetotransport characterizations revealed that this interface supports a high quality topological surface state devoid of bulk contribution, as evidenced by Hall, Shubnikov-de Haas, and weak anti-localization measurements. We believe that the experimental scheme demonstrated in this talk can serve as a promising method for the preparation of high quality TI thin films as well as many other heterostructures based on 2D vdW layered materials.