• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.3
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• pp.255-259
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• 2008

Built-in voltage in ITO/$Alq_3$/ Al organic light-emitting diodes was studied by varying a thickness of $Alq_3$ layer using modulated photocurrent technique at ambient condition. A thickness of the $Alq_3$ layer was varied from 100 to 250 nm. From the bias voltage-dependent photocurrent, built-in voltage of the device was able to be determined. The obtained built-in voltage is about 0.8 V irrespective of the $Alq_3$ layer thickness in the device. This value of built-in voltage confirms that the built-in voltage is generated due to a difference of work function of the anode and cathode. The $Alq_3$ layer thickness independent built-in voltage indicates that the built-in electric field in the device is uniform across the organic layer.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.215-215
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• 2014

Red color light emitting diodes (LEDs) were fabricated using CdSe/CdZnS quantum dots (QDs). During the device fabrication process, oxygen plasma treatment on the ITO surface was performed to improve the interfacial contact between ITO anode and the hole injection layer. CdSe/CdZnS quantum dots were cross-linked to remove their surrounded organic surfactants. The device shows red emission at 622 nm, which is consistent with the dimension of the QDs (band gap=1.99 eV). The luminance shows 6026% improvement compared with that of LEDs fabricated without oxygen plasma treatment and quantum dots cross-linking process. This approach would be useful for the fabrication of high-performance QLEDs with ITO electrode and PEDOT:PSS hole injection layers.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.316-319
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• 2001

Organic light emitting diodes(OLEDs) with a hole injection layer inserted between Indium-Tin-Oxide(ITO) anode and hole transport layer were fabricated. The effect of plasma treatment on the surface properties of Indium-Tin-Oxide(ITO) anode were studied. The electrical and optical characteristics of the fabricated organic light emitting diodes(OLEDs) were also studied. The diode including of plasma treated ITO substrate and the hole injection layer, which showed the luminance of 5280 $cd/m^{2}$ at 8 V

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.130-132
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• 2001

We have investigated current-voltage (I-V) characteristics of organic light-emitting diodes based on $TPD/Alq_3$ organics depending on the application of forward-reverse bias voltage. Luminance-voltage characteristics and luminous efficiency were measured at the same time when the I-V characteristics were measured. We have observed that the I-V characteristics shows a current mxima at low voltage, which is possibly not related to the emission from $Alq_3$.

• Transactions on Electrical and Electronic Materials
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• v.6 no.1
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• pp.25-28
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• 2005

We have investigated the effects of hole-injection buffer layer in organic light-emitting diodes using poly(3,4-ethylenedioxythiophene):poly(stylenesulfonate)(PEDOT:PSS) in a device structure of $ITO/PEDOT:PSS/TPD/Alq_{3}/cathode$. Polymer PEDOT:PSS buffer layer was made by spin casting method. Current-voltage, luminance-voltage characteristics and efficiency of device were measured at room temperature with a variation of cathode materials; Al, LiF/Al, LiAl, and Ca/Al. The device with LiF/Al cathode shows an improvement of external quantum efficiency approximately by a factor of ten compared to that of Al cathode only device. Our observation shows that cathode is important in improving the efficiency of the organic light-emitting diodes.

• The Transactions of the Korean Institute of Electrical Engineers B
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• v.53 no.1
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• pp.55-62
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• 2004

This paper presents a new hybrid control method of asymmetrical half-bridge converter (AHBC) with low voltage stresses of the diodes. The proposed new control scheme can observe variation of secondary diode voltage stresses by using feedback of the input voltage and then decide the control portions, which are symmetrical control and asymmetrical control. Therefore, the proposed control scheme has many advantages such as a low rated voltage of the secondary diodes and low conduction loss according to the low voltage drop. The principle of the proposed control scheme is explained in detail and its validity is verifiedthrough simulated and experimental results

• Journal of the Korean Applied Science and Technology
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• v.22 no.4
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• pp.299-305
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• 2005

In this study, we designed color of tunable and high efficient organic materials using the quantum dynamics and the semi-empirical calculation, and applied this results to the fabrication of organic light-emitting diodes. Also we optimized the molecular structure of phosphorescent materials and the energy transfer from a host to a dye which makes organic light-emitting diodes improve. Using quantum dynamics method, the molecular structures of ligand only and the whole metal chelate were optimized, and these energy levels were calculated. From this test results, we could understand the emission mechanism of phosphors with various ligands as well as design the proper ligands reducing the T-T annihilation and the carrier lifetime. We also could design ligands with various colors using this test method.

• Journal of the Korean Vacuum Society
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• v.18 no.5
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• pp.365-371
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• 2009

We analyzed photoluminescence (PL) and electroluminescence characteristics of various chirped quantum dot structures. Peaks in EL curves were contributed by excited states of quantum dots (QD), while those in PL curves by grounded states. Based on these characteristics, we suggested that superluminescent diodes with wide spectral bandwidth may be developed if chirped QD structures are designed to make a contribution by ground states to EL characteristics.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.51 no.7
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• pp.322-327
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• 2002

Temperature-dependent current-voltage characteristics of organic light-emitting diodes(OLEDs) were studied in a device structure of ITO/TPD/Alq$_3$/Al to understand conduction mechanism. The current-voltage characteristics were measured in the temperature range of 8K ~ 300K. We analyzed an electrical conduction mechanism of the OLEDS using space-charge-limited current(SCLC) and Fowler-Nordheim tunneling. In the temperature range above 150k, the conduction mechanism could be explained by space charge limited current from the inversely proportional temperature dependence of exponent m. The characteristic trap energy is found to be about 0.15ev. At low temperatures below 150k, the Fowler-Nordheim tunneling conduction mechanism is dominant. We have obtained a zero field barrier height to be about 0.6~0.8eV.

• Proceedings of the KIEE Conference
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• 2004.10a
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• pp.164-168
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• 2004

A Zero-Voltage-Switching(ZVS) Three-Level Converter realizes ZVS for the switches with the use of the leakage inductance(or external resonant inductance) and the output capacitors of the switches, however; the rectifier diodes suffer from recovery which results in oscillation and voltage spike. In order to solve this problem, this paper proposes a novel ZVS Three-Level converter, which introduces two clamping diodes to the basic Three-Level converter to eliminate the oscillation and clamp the rectified voltage to the reflected input voltage.