• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.11
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• pp.29-34
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• 1995

Mirror coating is applied to laser facets to improve properties of edge emitting laser diodes. In this experiment, InGaAsP/GaAs high power laser diodes were studied with respect to different degrees of anti-reflective coating. Sputterred $Al_{2}$O$_{3}$ was used as the coating material and the HR coating was kept constant at 90%. Threshold current density, differential quantum efficiency, emission wavelength and the operating current at 500mW were measured for a range of AR coating and compared with theoretically calculated values; that showed good agreements. Precise wavelength control is important for laser diodes for solid state pumping because of small absorption bandwidth. In addition, since these lasers operate under CW condition, a lowest possible operating current for a given power is desired in order to minimize the heat produced. From the results of this experiment, we were able to obtain a optimum range of AR coatings for minimum operating current. The wavelength can be varied up to 4nm within this range.

• JSTS:Journal of Semiconductor Technology and Science
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• v.12 no.4
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• pp.467-472
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• 2012

In this paper, we present a finite element method (FEM) study on the space charge effects in organic light emitting diodes. The physical model covers all the key physical processes in OLEDs, namely charge injection, transport and recombination, exciton diffusion, transfer and decay as well as light coupling, and thin-film-optics. The exciton model includes generation, diffusion, and energy transfer as well as annihilation. We assumed that the light emission originates from oscillation which thus is embodied as exciton in a stack of multilayer. We discuss the accumulation of charges at internal interfaces and their signature in the transient response as well as the electric field distribution. We also report our investigation on the influence of the insertion of the emission layer (EML) in the bilayer structure.

• Journal of electromagnetic engineering and science
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• v.16 no.3
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• pp.159-163
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• 2016

In this paper, a frequency tunable double band-stop resonator (BSR) with voltage control by varactor diodes is suggested. It makes use of a half-wavelength shunt stub as its conventional basic structure, which is replaced by the distributed LC block. Taking advantage of the nonlinear relationship between the frequency and electrical length of the distributed LC block, a dual-band device can be designed easily. With two varactor diodes, the stop-band of the resonator can be easily tuned by controlling the electrical length of the resonator structure. The measurement results show the tuning ranges of the two operating frequencies to be 1.82 GHz to 2.03 GHz and 2.81 GHz to 3.03 GHz, respectively. The entire size of the resonator is $10mm{\times}11mm$, which is very compact.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.04b
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• pp.143-146
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• 2000

We studied effects of alkyl($C_nH_{2n+1}$) chain length on characteristics of poly(3-alkylthiophene) electroluminescent diodes. Among the poly(3-alkylthiophene), poly(3-hexylthiophene)(n=6) and poly(3- octyIthiophene)(n=8) were mainly used for the emitting layer of the diode. The result of experiment, the emission intensity of poly(3-alkylthiophene) electroluminescent diodes depends on the alkyl chain length. Strong emission is obtained from a poly(3-alkylthiophene) diodes of long alkyl side chain length. Emission intensities are enhanced by a confinement of carriers on a main chain with a long interchain distance caused by a long alkyl side chain.

• ETRI Journal
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• v.33 no.1
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• pp.32-38
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• 2011

We investigated the light-emitting performances of blue phosphorescent organic light-emitting diodes, known as PHOLEDs, by incorporating an N,N'-dicarbazolyl-3,5-benzen interlayer between the hole transporting layer and emitting layer (EML). We found that the effects of the introduced interlayer for triplet exciton confinement and hole/electron balance in the EML were exceptionally dependent on the host materials: 9-(4-tert-butylphenyl)-3,6-bis(triphenylsilyl)-9H-carbazole, 9-(4-tert-butylphenyl)-3,6-ditrityl-9H-carbazole, and 4,4'-bis-triphenylsilanyl-biphenyl. When an appropriate interlayer and host material were combined, the peak external quantum efficiency was greatly enhanced by over 21 times from 0.79% to 17.1%. Studies on the recombination zone using a series of host materials were also conducted.

• Proceedings of the KIPE Conference
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• 2001.12a
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• pp.171-174
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• 2001

This paper proposes a nonlinear impedance circuit composed by diodes and inductors or capacitors. This circuit needs no control circuits and switches, and the impedance .value is changed by the polarity of current or voltage. and this paper presents one of these applications to improve the input current of capacitor input diode rectifiers. The rectifier using the nonlinear impedance circuit id constructed with four diodes and four capacitors in addition to the conventional rectifiers, that is, it has eight diodes and five capacitors, including a DC link capacitor. It makes harmonic components of the input current reduce and the power factor improve. A circuit design method is shown by experimentation and confirmed simulation. It explained that compared conventional pulse width modulated (PWM) inverter with half pulse-width modulated (HPWM) inverter. Proposed HPWM inverter eliminated dead-time by lowering switching loss and holding over-shooting.

• Proceedings of the KIPE Conference
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• 2009.11a
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• pp.143-145
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• 2009

The method for the current equalization of the rectifier diodes in LLC resonant converter is proposed. The method decreases the current difference between the rectifier diodes using the auxiliary winding of the transformer and asymmetrical pulse width modulation (APWM). The analytical reason of the current unbalance is investigated and the operation principle of the proposed method and APWM control loop are explained. The performance of the proposed method was verified on a 480-W, 400-V/24-V dc/dc converter.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.57 no.1
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• pp.73-77
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• 2008

We have investigated dielectric polarization in organic light-emitting diodes using 8-hydroxyquinoline aluminum($Alq_3$) as an electron transport and emissive material. We analyzed the dielectric polarization of organic light-emitting diodes using characteristics of impedance and equivalent circuit of $ITO/Alq_3/Al$. Impedance characteristics was measured complex impedance Z and phase ${\theta}$ in the frequency range of $1{\times}40Hz\;to\;1{\times}10^8Hz$. We obtained complex electrical conductivity, dielectric constant, and loss tangent(tan${\delta}$) of the device at room temperature. And, we obtained the equivalent circuit of $ITO/Alq_3/Al$ through analyzing dielectric constant and dielectric loss tangent. From these analyses, we could interpret a conduction mechanism and dielectric polarization.

• Journal of Power Electronics
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• v.14 no.6
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• pp.1224-1232
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• 2014

A full-bridge secondary dual-resonant DC-DC converter using the asymmetrical pulse-width modulated (APWM) strategy is proposed in this paper. The proposed converter achieves zero-voltage switching for the power switches and zero-current switching for the rectifier diodes in the whole load range without the help of any auxiliary circuit. Given the use of the APWM strategy, a circulating current that exists in a traditional phase-shift full-bridge converter is eliminated. The voltage stress of secondary rectifier diodes in the proposed converter is also clamped to the output voltage. Thus, the existing voltage oscillation of diodes in traditional PSFB converters is eliminated. This paper presents the circuit configuration of the proposed converter and analyzes its operating principle. Experimental results of a 1 kW 385 V/48 V prototype are presented to verify the analysis results of the proposed converter.

• Proceedings of the KIEE Conference
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• 1988.11a
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• pp.368-371
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• 1988

The MS diodes made by evarporating In, Au/Ge on the p-GaP substrates, and the p-n diode made by diffusing Te in the p-GaP were fabricated, and its electric-optical characteristics were surveyed. The maximum peak of E.L spectrum was shifted towards the longer wavelengths with increasing temperature, and its intensity increased with in-creasing of current. The MS diodes were fabricated rather easily and is electric-optical characteristics was as good as that of p-n diodes.