• Title/Summary/Keyword: Diode

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Characteristics of Visible Laser Diode and Its Injection-Locking (가시광 다이오드 레이저의 스펙트럼 및 주입-잠금 특성분석)

  • 남병호;박기수;권진혁
    • Korean Journal of Optics and Photonics
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    • v.5 no.2
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    • pp.278-285
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    • 1994
  • We investigated the spectral characteristics for temperature and driving current change in visible laser diode. As a result of spectrum analysis, the ratio of frequency change for temperature and driving current change were about $33 GHz/^{\circ}C$, 6.6 GHz/mA in the region which was not mode hopping range. Compared to the sharp mode hopping in the near IR single mode AlGaAs lasers, the visible laser diode showed relatively broad multimode operation in the mode hopping region. We performed the experiment of injection-locking characteristics analysis for visible laser diode. Locking half bandwidth(LHBW) was measured 0~5.0 GHz for $0~25\muW$ input power and it was dependent on the input power. Also, LHBW for polarization angle was dependent on the difference of polarization angle between master laser and slave laser. The phase change of injection-locked output beam of the slave laser diode as a function of the drive current was measured in the interferometer which was composed of master laser and slave laser. The ratio of phase change with the slope of 5.0~1.3 rad/mA was obtained within injection-locking range for the change of $2~25\muW$ input power. power.

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Effect of light-emitting diode (LED) on in vitro shoot growth and rooting in teak (Tectona grandis L.) (티크의 기내 줄기 생장 및 발근에 미치는 LED (light-emitting diode) 효과)

  • Lee, Na-Nyum;Kim, Ji-Ah;Kim, Yong-Wook
    • Journal of Plant Biotechnology
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    • v.46 no.4
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    • pp.291-296
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    • 2019
  • This study was conducted to determine the effect of a light-emitting diode (LED) on in vitro shoot growth and rooting in teak (Tectona grandis L.). In the experiments with apical bud explants, the greatest shoot elongation (3.2 cm) occurred when they were cultured on DKW medium under 50% blue and 50% red LED mixture (BR), whereas no differences in growth were observed in different light sources (florescent light [F] or BR) or media (MS or DKW). The highest number of shoot multiplication (2.4/explant) or elongation (4.94 cm) was achieved with 0.5 or 1.0 mg/L 6-Benzyladenine (BA) treatment under BR. In addition, the best rooting rate (93.8%) or root length (1.3 cm) was recorded with 0.5 mg/L indole-3-butyric acid (IBA) treatment under BR, and the highest root induction (3.1/explant) was observed in 0.2 mg/L IBA under BR. The in vitro rooted plantlets were hardened and survived well on soil.

Development of a voltage-controlled output current source for zenor diode degradation analysis (제너다이오드의 열화평가를 위한 전압제어 출력 전류원 개발)

  • Kim, Jong-ho;Chang, Hong-ki;Kwon, Young-mok;Che, Gyu-shik
    • Journal of Advanced Navigation Technology
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    • v.21 no.5
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    • pp.501-507
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    • 2017
  • When zenor diode load current is necessary to be controlled by input voltage as a circuit load, existing voltage controlling method cannot be applied to it because the output current of zenor diode is changed due to breakdown voltage variations. We propose input voltage controlled output current source regardless of zenor breakdown voltage variation due to degradation resulted from severe current applied electronic component life test as a circuit load in this paper. We show breakdown voltage characteristics of this zenor diode circuit through simulation, applying adequate values for each component in order to verify the circuit composed of that method, and then show the result in which output current is controlled by input voltage. We confirmed the output current varies proportional to input voltage, and developed circuit shows a constant value independent of zenor diode breakdown voltage variations due to component degradations.

LED IT-based System sensor network transceiver module research (LED IT 기반 시스템 센서 네트워크 송수신 모듈 연구)

  • Jang, Tae-Su;Lee, Jun-Myung;Choi, Jung-Won;Kim, Yong-kab
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2012.10a
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    • pp.11-12
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    • 2012
  • In this paper, efficient visible light communication technology LED (Light Emitting Diode) lighting through the existing infrared sensor used for performance analysis of transmitting and receiving is possible. LED utilizes lighting by changing light into electricity. Lighting features while maintaining the basic principles of flashing LED and PD (Photo Diode) to send and receive communications from LED lighting communication convergence principle be realized simultaneously enabling. Multiple IT applications under the basic structure of LED technology development, and the current was encountered in real life. LED lighting anywhere with wireless communication technology that can, in order to ~ 1m above the initial value by taking advantage of the system H/W and infrared sensors(PD) are widely used in the entire system that can improve the speed of visible light data transmission system is finished. LED module that is used to communicate whether the performance analysis, For forecasting and communication distance on the LED and infrared sensor configuration of the implementation of the research is to study about the possibility of application methods and indicates.

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The Effect of Dentin Desensitization Treatment on the Shear Bond Strength of Luting Cements (상아질 지각과민 완화법이 접착용 시멘트의 전단결합강도에 미치는 영향)

  • Park, In-Ho;Lee, Joon-Soek;Cho, In-Ho
    • Journal of Dental Rehabilitation and Applied Science
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    • v.22 no.3
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    • pp.231-242
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    • 2006
  • Statement of problem: The sealing of the opened dentinal tubules that follows the tooth preparation for the prosthodontic restoration is considered as clinical process to reduce postoperative sensitivity. Purpose: This study investigated the effect of desensitization treatment on shear bond strength of luting cements. Materials and Method: Total 80 dentin specimens were divided into two groups according to the kinds of luting cements. Each groups was further divided into 4 subgroups with AQ $bond^{(R)}$, $Saforide^{(R)}$, Diode laser $MDL-10^{(R)}$ application and without desensitization treatment. After desensitization treatment application, Ni-Cr specimens were luted to dentin surface with Fuji $CEM^{(R)}$ and $Panavia-F^{(R)}$. Specimens were placed in distilled water at $37^{\circ}C$ for 24 hours and shear bond strength between metal and dentin was measured by a universal testing machine. Results: 1. In Fuji $CEM^{(R)}$ cemented groups, the combination of AQ $bond^{(R)}$ showed the greatest strength, followed by diode laser, no desensitizer treatment, and $Saforide^{(R)}$. Both AQ $bond^{(R)}$ and Diode laser groups had a significant difference than no desensitization treatment group and $Saforide^{(R)}$ group(p<0.05). 2. In $Panavia-F^{(R)}$ cemented groups, the combination of Diode laser showed the greatest strength, followed by AQ $bond^{(R)}$, $Saforide^{(R)}$, and No desensitization treatment. All desensitization treatment groups had a significant difference than no desensitization treatment group(p<0.05). 3. All $Panavia-F^{(R)}$ groups showed a significant higher shear bond strength than all Fuji $CEM^{(R)}$ groups(p<0.05). Conclusion: The results of this study showed possibility of bond strength increase after desensitization treatment. The application of desensitization treatments like AQ $bond^{(R)}$, $Saforide^{(R)}$, and Diode laser $MDL-10^{(R)}$ have advantages in exposed dentin surface after tooth prep.

Reconfigurable Polarization Patch Antenna with Y-Shaped Feed (Y형태의 급전 구조를 이용한 편파 변환 재구성 패치 안테나)

  • Lee, Da-Ae;Sung, Youngje
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.25 no.1
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    • pp.1-9
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    • 2014
  • In this paper, a reconfigurable polarization patch antenna that uses a Y-shaped feed is proposed. The proposed antenna consists of a square patch, a Y-shaped feeding structure, a PIN diode, and a bias circuit for diode operation. The structural symmetry/asymmetry of the feeding structure is determined by the on/off operation of the PIN diode that inserted into the side of one of the lines of the Y-shaped feeding structure. For the proposed reconfigurable antenna, the two microstrip lines of the feeding structure have the same length when the PIN diode operates in the on state, and the antenna exhibits linear polarization(LP). On the other hand, when the PIN diode operates in the off state, the length of one side line of the feeding structure is relatively shorter than that of the other line. Therefore, the antenna exhibits circular polarization(CP). From the measurement results, it is found that the proposed antenna exhibits good impedance matching and axial ratio. In addition, polarization switching can be easily achieved in the same operating band.

Degradation of RF Receiver Sensitivity Due to TVS Diode (TVS Diode에 의한 안테나 무선감도 저하 분석)

  • Hwang, Yoon-Jae;Park, Je-Kwang;Yook, Jong-Gwan
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.24 no.10
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    • pp.979-986
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    • 2013
  • In this paper, a TVS diode which is commonly used as a ESD protector in wireless communication devices could cause antenna wireless sensitivity to decrease has been analyzed. When a smartphone doesn't have enough space to place many components, there would be its speaker near antenna area. In order to protect ESD coming through the speaker there also could be a TVS within antenna GND area. Digital audio signal which was sent to speaker and CDMA RF communication signal coupled from antenna was mixed by TVS. And this leakage current running through TVS resulted in decrease of antenna wireless sensitivity. The results of various experiments can be explained using circuit simulation. Following works will give us some insights that can reduce unwanted summation of digital and RF signal due to nonlinearity of ESD protectors.

Properties and SPICE modeling for a Schottky diode fabricated on the cracked GaN epitaxial layers on (111) silicon

  • Lee, Heon-Bok;Baek, Kyong-Hum;Lee, Myung-Bok;Lee, Jung-Hee;Hahm, Sung-Ho
    • Journal of Sensor Science and Technology
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    • v.14 no.2
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    • pp.96-100
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    • 2005
  • The planar Schottky diodes were fabricated and modeled to probe the device applicability of the cracked GaN epitaxial layer on a (111) silicon substrate. On the unintentionally n-doped GaN grown on silicon, we deposited Ti/Al/Ni/Au as the ohmic metal and Pt as the Schottky metal. The ohmic contact achieved a minimum contact resistivity of $5.51{\times}10.5{\Omega}{\cdot}cm^{2}$ after annealing in an $N_{2}$ ambient at $700^{\circ}C$ for 30 sec. The fabricated Schottky diode exhibited the barrier height of 0.7 eV and the ideality factor was 2.4, which are significantly lower than those parameters of crack free one. But in photoresponse measurement, the diode showed the peak responsivity of 0.097 A/W at 300 nm, the cutoff at 360 nm, and UV/visible rejection ratio of about $10^{2}$. The SPICE(Simulation Program with Integrated Circuit Emphasis) simulation with a proposed model, which was composed with one Pt/GaN diode and three parasitic diodes, showed good agreement with the experiment.

The study of detector condition proper to the measurement of 6MV small x-rays beam (6MV 소형 x-선 beam 측정에 적합한 검출기의 조건에 관한 연구)

  • Yoo, Myung-Jin;Doh, Shin-Hong
    • Journal of Sensor Science and Technology
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    • v.8 no.3
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    • pp.219-225
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    • 1999
  • The purpose of this study is to measure such parameters as TMR, OAR, TSF for small beams ranging in size from 12.5mm to 40mm by diode, ionization chamber, film, TLD and to determine proper detectors for the measurement of 6MV small x-ray beams. Diode and film show good results within 2% error for the TMR measurement of the beam as small as beam with diameter 12.5mm. Diode and film have excellent spatial resolution in the OAR measurement and the comparison between two detectors shows the error within 3%. But TMR and OAR can not be measured accurately by the ionization chambers. The TSF by diode and TLD records 0.890.96 for the beams with diameter 12.5mm 40mm. The TSF determined by 0.125cc ionization chamber and markus ionization chamber for the larger beams than the beams with diameter 25mm agrees within 2% comparing with that of diode and TLD.

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Fault Diagnosis for 3-Phase Diode Rectifier using Harmonic Ripples of DC Link Voltage (직류단 전압의 고조파 맥동 검출을 이용한 3상 다이오드 정류기의 고장 진단)

  • Park, Je-Wook;Baek, Seong-Won;Kim, Jang-Mok;Lee, Dong-Choon;Lee, Kyo-Beum
    • The Transactions of the Korean Institute of Power Electronics
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    • v.16 no.5
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    • pp.457-465
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    • 2011
  • The fault analysis and detecting algorithm for a 3 phase diode rectifier is proposed. The 3 phase dioderectifier is used for the AC power rectifier of the PWM inverter. The input power or diode faults cause theripples of the DC voltage, degradation of the control performance and life shortening of the DC link capacitor.In this paper, the ripple of the DC voltage is mathematically analyzed for the earth fault of input power andopen circuit fault of the diode, respectively. The fault detection and type of fault can be obtained by comparingthe average DC voltage and the instant DC voltage which is sampled with 6 times of grid frequency. Theproposed method can be easily applicable and doesn't require additional circuit. The experimental and simulationresults are presented to verify the validity of the proposed method.