• 한국연소학회지
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• 제9권3호
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• pp.27-35
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• 2004

Diode laser absorption sensors are advantageous because they may provide fast, sensitive, absolute, and selective measurements of species concentration. These systems are very attractive for practical applications owing to its compactness, resonable cost, robustness, and ease of use. In addition, diode lasers are fiber-optic compatible and thus enable simultaneous measurements of multiple species along a line-of-sight. Recent advances of room-temperature, near-IR and visible diode laser sources for telecommunication, optical data storage applications make it possible to be applied for combustion diagnostics based on diode laser absorption spectroscopy. Therefore, combined with fiber-optics and high sensitive detection strategies, compact and portable sensor systems are now appearing for variety of applications. The objectives of this research are to develope a new gas sensing system and to verify feasibility of this system. Wavelength and power characteristics as a function of injection current and temperature are experimentally found out. Direct absorption spectroscopy has been demonstrated in these experiments and has a bright prospect to this diode laser system.

• 전기전자학회논문지
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• 제19권1호
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• pp.94-100
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• 2015

본 논문에서는 U-MOSFET 내부의 기생 body 다이오드(PN diode)를 쇼트키 body 다이오드(Schottky body diode)로 대체한 50V급 전력 U-MOSFET을 제안하였다. 쇼트키 다이오드는 PN 다이오드와 비교 시, 역 회복 손실(reverse recovery loss)을 감소시킬 수 있는 장점을 가지고 있다. 따라서 전력 MOSFET의 기생 body 다이오드를 쇼트키 body 다이오드를 대신함으로써 역 회복 손실을 최소화 할 수 있다. 제안된 쇼트키 body 다이오드(Schottky body diode) U-MOSFET(SU-MOS)를 conventional U-MOSFET(CU-MOS)와 전기적 특성을 비교한 결과, 전달(transfer) 및 출력(output)특성, 항복(breakdown)전압 등 정적(static) 특성의 변화 없이 감소된 역 회복 손실을 얻을 수 있었다. 즉, 쇼트키 다이오드의 폭(width)이 $0.2{\mu}m$, 쇼트키 장벽 높이(Schottky barrier height)가 0.8eV일 때 첨두 역전류(peak reverse current)는 21.09%, 역 회복 시간(reverse recovery time)은 7.68% 감소하였고, 성능지수(figure of merit(FOM))는 35% 향상되었다. 제안된 소자의 특성은 Synopsys사의 Sentaurus TCAD를 사용하여 분석되었다.

• 반도체디스플레이기술학회지
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• 제21권2호
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• pp.123-126
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• 2022

We investigated deep levels in n-type 4H-SiC epitaxy layer of the Positive-Intrinsic-Negative diode and Schottky barrier diodes by using deep level transient spectroscopy. Despite the excellent performance of 4H-SiC, research on various deep level defects still requires a lot of research to improve device performance. In Positive-Intrinsic-Negative diode, two defects of 196K and 628K are observed more than Schottky barrier diode. This is related to the action of impurity atoms infiltrating or occupying the 4H-SiC lattice in the ion implantation process. The I-V characteristics of the Positive-Intrinsic-Negative diode shows about ~100 times lower the leakage current level than Schottky barrier diode due to the grid structures in Positive-Intrinsic-Negative. As a result of comparing the capacitance of devices diode and Schottky barrier diode devices, it can be seen that the capacitance value lowered if it exists the P implantation regions from C-V characteristics.

• Journal of information and communication convergence engineering
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• 제1권3호
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• pp.139-142
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• 2003

In this paper, we consider the factors that affect a conversion loss performance in designing a single balanced diode mixer integrated with IRF(Image Reject Filter), based on the embedded electrical wavelength placed between the IRF and mixer, diode matching and LO drive amplifier. To evaluate the conversion loss performance, we suggest two types of a single balanced mixer using 90 degree branch line coupler, microstrip line and schottky diode. One is only mixer and the other is integrated with IRF and LO drive amplifier. The measured results of a single balance diode mixer integrated IRF show the conversion loss of 8.5 dB and the flatness of 1 dB p-p from 21.2 GHz to 22.6 GHz with 10 dBm LO. The measured input PI dB and IIP3 are 7 dBm and 15 dBm respectively under the nominal LO power level of 10dBm. The LO/RF and LO/IF isolation are 22 dB and 50 dB, respectively.

• Journal of Mechanical Science and Technology
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• 제16권11호
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• pp.1550-1557
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• 2002

Diode laser sensor for measuring gas temperature and species concentration in combustion chamber was developed using 2.0 tim distributed feed back lasers. To evaluate the measurement sensitivity of diode laser sensor system, CO2 survey spectra near 2.0 Um were measured and compared with the calculated one. This diode laser absorption sensor was applied to measure gas temperatures in a premixed flat flame of CH$_4$-air mixture. Experimental results were in good agreement with the values by an R-type thermocouple within 6.12%. In addition, successful demonstration of measurement of gas temperature and species concentration in a soot flame showed the promising possibility of diode laser absorption sensors for practical combustion system with non-intrusive method.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2004년도 추계학술대회
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• pp.1231-1235
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• 2004

The needs of micro scale thermal detecting technique are increasing in biology and chemical industry. For example, Thermal finger print, Micro PCR(polymer chain reaction), ${\mu}TAS$ and so on. To satisfy these needs, we developed a DTSA(Diode Temperature Sensor Array) for detecting and controlling the temperature on small surface. The DTSA is fabricated by using VLSI technique. It consists of 32 ${\times}$ 32 array of diodes (1,024 diodes) for temperature detection and 8 heaters for temperature control on a 8mm ${\times}$ 8mm surface area. The working principle of temperature detection is that the forward voltage drop across a silicon diode is approximately proportional to the inverse of the absolute temperature of diode. And eight heaters ($1K{\Omega}$) made of poly-silicon are added onto a silicon wafer and controlled individually to maintain a uniform temperature distribution across the DTSA. Flip chip packaging used for easy connection of the DTSA. The circuitry for scanning and controlling DTSA are also developed

• 한국공작기계학회논문집
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• 제13권4호
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• pp.30-36
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• 2004

The development of LD(Laser Diode) tester and its control system based on the graphical programming language(LabVIEW) is addressed. The ill tester is used to check the optic power and the optic spectrum of the LD Chip. The emitter size of LD chip and the diameter of the Detector(optic fiber and photo diode) are very small, therefore the test device needs high accuracy. But each motion part of the test device could not accomplish high accuracy due to the limit of the mechanical performance. So, an image processing with machine vision is proposed to compensate for the error. By adopting our method we can reduce the error of position within $\pm$5$\mu\textrm{m}$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.347-348
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• 2006

This paper performed the basic study for developing the Photodynamic Therapy Equipment for medical treatment. The equipment have been manufactured by using the High Bright Light Emitting Diode and TLC5941 integrated circuit. As a result, 630nm Light Emitting Diode Module was made for the optimization of irradiation condition. And we confirmed the current change according to increase of the level of Light Emitting Diode Module.

• 한국전기전자재료학회논문지
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• 제20권5호
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• pp.415-420
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• 2007

Generally, a diode package consists of the synthetic resin that has good durability but low thermal conductivity. The surface mounted type fast recovery diode was fabricated by using ceramic package. Its main manufacture processes are composed of soldering, sillicon coating and side termination. And it has various advantages that diode is small, easy manufacture and fast cooling. The electric characteristics of the diode such as reverse recovery time, breakdown voltage, forward voltage, and leakage current were 5.28 ns, 1322 V, 1.08 V, $0.45\;{\mu}A$, respectively.

• 한국정보통신학회논문지
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• 제16권3호
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• pp.416-423
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• 2012

Ansoft HFSS와 Serenade를 사용하여, 적층형 저역통과필터(LPF)와 RF 다이오드 스위치를 설계하였다. RF diode switch의 등가회로를 참고한 시뮬레이션은 송신모드 (Transmit mode)일 때 다이오드를 인덕터(Inductor)로 등가 회로화 하였고, 수신모드(Receive mode) 일때는 다이오드를 커패시터(Capacitor)로 변환하여 시뮬레이션 하였다. 적측형 RF diode 설계는 소자 와 수축률 변화를 고려하여 수행하였다.