• Journal of the Korean Institute of Telematics and Electronics
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• v.11 no.1
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• pp.40-46
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• 1974

This paper deals with the self-excited mixer using tunnel diode oscillator operated as a microwave source and Doppler signal detector. The system impedance, the oscillation condition and the frequency conversion theory including moving target are investigated. The oscillating frequency and the output of tunnel diode oscillator are 2.035 GHz and 0.1 mW. The input signal frequency which is equivalent to Doppler signal is lower than tunnel diode oscillator frequency by 125 MHz. TDe conversion loss has been investigated as a functicn of input signal level. This loss is greater than 67 db for the large pump mode.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.3
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• pp.248-251
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• 2009

We have investigated the effect of the quality of 1.3 um distributed feed back laser diode (DFB-LD) on the design of anti-reflection (AR) coatings. Optimal condition of AR coating to prevent internal feedback from both facets and reduce the reflection-induced intensity noise of laser diode was simulated with Macleod Simulator. Coating materials used in this work were ${Ti_3}{O_5}$ and $SiO_2$, of which design thickness were 105 nm and 165 nm, respectively. AR coating films were deposited by Ion-Assisted Deposition system. The electrical and optical properties of 1.3 um laser diode were characterized by Bar tester and Chip tester. Threshold current and slop-efficiency of DFB-LD were 27.56 mA 0.302 W/A. Far field pattern and wavelength of DFB-LD were $22.3^{\circ}(Horizontal){\times}24.4^{\circ}$ (Vertical), 1313.8 nm, respectively.

• Journal of Power Electronics
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• v.16 no.5
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• pp.1706-1715
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• 2016

In this paper, a single phase modified switched-diode topology for both symmetrical and asymmetrical cascaded multilevel inverters is presented. It consists of a Modified Switched-Diode Unit (MSDU) and a Twin Source Two Switch Unit (TSTSU) to produce distinct positive voltage levels according to the operating modes. An additional H-bridge synthesizes a voltage waveform, where the voltage levels of either polarity have less Total Harmonic Distortion (THD). Higher-level inverters can be built by cascading MSDUs. A comparative analysis is done with other topologies. The proposed topology results in reductions in the number of power switches, losses, installation area, voltage stress and converter cost. The Nearest Level Control (NLC) technique is employed to generate the gating signals for the power switches. To verify the performance of the proposed structure, simulation results are carried out by a PSIM under both steady state and dynamic conditions. Experimental results are presented to validate the simulation results.

• The Transactions of the Korean Institute of Electrical Engineers B
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• v.54 no.11
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• pp.540-546
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• 2005

This paper presents a boost circuit topology driving in high - frequency It solves the problem which arised from hard-switching in high-frequency using a period of resonant circuit and operating under the principle of ZCS turn-on and ZCZVS turn-off commutation schemes. In the existing circuit, it has the high voltage and current stress in free- wheeling diode. But in the proposed circuit, it has voltage and current stress which is lower than voltage and current stress of existing circuit with modifing a location of free-wheeling diode. In this paper, it explained the circuit operation of each mode and the waveform of each mode. Also the experiment results compare the voltage and current stress of free-wheeling diode in the existing circuit with the voltage and current stress of that in the proposed circuit. Moreover, it compares and analyzes the proposed circuit's efficiency with the existing circuit's efficiency according to the change of load current.

• Journal of the Institute of Convergence Signal Processing
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• v.2 no.2
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• pp.68-74
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• 2001

A design and implementation method for the UHF-band(800MHz) variable attenuator using the 3dB coupler is proposed. The 90 degree, 3-dB Coupler is used for the variable attenuator. The principal theory for the 3-dB coupler is introduced. The 3-dB Coupler is designed by the mathematical analysis and a computer simulation tool. A PIN diode is used for the variable resistor at UHF-band. The variable attenuator using the 3-dB coupler and the PIN diode is designed and implemented. The measured results for the variable attenuator by a network analyzer show that the insertion loss is below -l0dB, and the continuous variable attenuation range is about 10dB.

• Proceedings of the Korean Society of Machine Tool Engineers Conference
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• 1995.03a
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• pp.1-8
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• 1995

This paper proposed a simple method for measuring surface roughness of ground surface. utilizing non-contact in-process measuring system using the diode laser. The measurement system is consisted of a laser unit with a diode laser and a cylindrical lens a detecting unit with polygon mirror and CCD array sensor. and a signal processing unit with a computer and device. During operation, this measuring system can provide information on surface roughness in the measuring distance with a single sampling and simultanilusly monitor the state of the grind wheel. The experimental results, showed that the increase of the feed rate and the dressing speed an caused increase in the surface roughness and when the surface roughness is 4Rmax-10Rmax, the cutting speed is 1653m/min-1665m/min. the feed rate is 0.2m/min-0.9m/min, the dressing speed is 0.2mm/rev-0.4mm/rev, the stylus method and the in-process method can be obtained the same results. thus under limited working conditions. using the proposed system. the surface roughness of the ground surface during cylindrical grinding can be obtained through the in-process measurement method using the diode laser.

• Journal of Sensor Science and Technology
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• v.8 no.6
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• pp.448-453
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• 1999

A Pd-SiC Schottky diode for detection of hydrogen gas operating at high temperature was explored. Hydrogen-sensing behaviors of Pd-SiC Schottky diode were analyzed as a function of hydrogen concentration and temperature by I-V and ${\Delta}I$-t methods under steady-state and transient conditions. The effect of hydrogen adsorption on the barrier height was investigated. Analysis of the steady-state kinetics using I-V method confirmed that the atomistic hydrogen adsorption process is responsible for the barrier height change in the diode.

• The Proceeding of the Korean Institute of Electromagnetic Engineering and Science
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• v.11 no.4
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• pp.39-52
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• 2000

A design of 2 stage S-DLVA(successive detector log video amplifier) was studied to detect wide dynamic radar pulse ranging from -70 ㏈m to 0㏈m. A basic design idea was focused on the linear detection in logarithmic scale of wide dynamic range radar pulses from nosie-like weak power of -70 ㏈m to relatively high power 0 ㏈m. It is highly formidable, since it requires high speed detection less than 10 nsec over the operating frequency ranges from 6 to 18 ㎓. A limiter diode, a tunnel diode and an L17-C were used as a protecting device, a detector diode and a log video amplifier in companion as a single stage detector to give voltage output proportional to the input power of about 35 ㏈ dynamic range. A protype of 2-stage DLVA having one more single stage detector was fabricated with a 32 ㏈ low noise amplifier and a 3 ㏈ hybrid coupler to provide total 70 ㏈ dynamic range detection. The logging characteristics were measured to have log slope of 25m.V/㏈ against 70 ㏈ logging range from -55 ㏈m to +15 ㏈m, the log linearity of within +/- 1.5 ㏈, and tangential sensitivity was at -63 ㏈m. The pulse dynamics of rise time and recovery time were measured as 50 nsec and 1.2 $\mu$sec, respectively. The reason might be due to the parasitic capacitances of packaged limiter, tunnel diode, and L17-C.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.14 no.12
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• pp.1335-1340
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• 2003

In this paper, a single balanced diode Mixer for the homodyne FMCW radar to detect distance and velocity of a vehicle target is designed and implemented using a microstrip line and two schottky barrier beam lead diodes. This mixer is optimally designed to have less a conversion loss within the 100 MHz bandwidth with a little LO injection power and a higher LO isolation as soon as possible through the embedded electrical length of microsrtrip line placed between the coupler and diode matching, considering together LO matching condition. The measured results show 6 dB of conversion loss, 23 dB LO/RF isolation and 3 dBm of input 1l dB, respectively.

• ETRI Journal
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• v.41 no.6
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• pp.715-730
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• 2019

We propose a switched beam-forming antenna that satisfies not only ultra-wideband characteristics but also beam-forming in the WLAN frequency band using an ultra-wideband antenna and passive parasitic elements applying a broadband optimal reactance load algorithm. We design a power and phase estimation function and an error correction function by re-analyzing and normalizing all the components of the parasitic array using control system engineering. The proposed antenna is compared with an antenna with a pin diode and reactance load value, respectively. The pin diode is located between the passive parasitic elements and ground plane. An antenna beam can be formed in eight directions according to the pin diode ON (reflector)/OFF (director) state. The antenna with a reactance load value achieves a better VSWR and gain than the antenna with a pin diode. We confirm that a beam is formed in eight directions owing to the RF switch operation, and the measured peak gain is 7 dBi at 2.45 GHz and 10 dBi at 5.8 GHz.