• The Transactions of the Korean Institute of Power Electronics
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• v.6 no.4
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• pp.348-361
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• 2001

The three-phase diode rectifier with capacitive filter is highly sensitive to line voltage unbalance. Because of its inherent nonlinear characteristics, small line voltage unbalance may cause highly unbalanced line current, causing detrimental effects on power quality. This paper presents a theoretical basis on this 'unbalance amplification effect' and derives an analytical model of line current characteristics under unbalanced line voltage condition for various modes of operation. The results provide a basic guideline for optimal design of a three-phase diode rectifier with capacitive filter that is most commonly used for interfacing various power conversion equipments to power lines.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.54 no.4
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• pp.178-184
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• 2005

In this paper, using diplexer structure and varactor diode controlled by reverse bias voltage for diplexer switch gives possibilities to improve isolation and current characteristics. 1 have newly designed switch with high isolation by application varactor diode corresponding to capacitor of diplexer. The low-pass filter for proposed tunable diplexer passes the microwave signal in the bandwidth for wireless cellular network systems and high-pass filter passes it in the bandwidth for wireless personal communication services (PCS) network systems. As the capacitance of the low-pass filter increases, the cut-off frequency can be moved to low frequency, so that the switch is on state in cellular bandwidth and off state in the PCS bandwidth, in contrast to, as the capacitance for attenuation characteristic of high-pass filter increases, it can be moved to high frequency, so that the switch is off state and on state in the cellular bandwidth. it is possible to improve isolation and current consumption characteristics by application diplexer design methods and varactor diode. 1 expect that the tunable diplexer circuit and design methods should be able to find applications on MMIC and low temperature copired ceramic (LTCC).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.103-106
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• 2004

We have studied a conduction mechanism and equivalent circuit analysis in $Alq_3$ based Organic Light Emitting Diode. The conduction mechanism in organic light emitting diode can be classified into three regions; ohmic region, space-charge-limited current (SCLC) region and trap-charge-limited current (TCLC) region depending on the region of applied voltage. Equivalent circuit model of organic light emitting diode can be established using a parallel combination of resistance $R_p$ and capacitance $C_p$ with a small series resistance $R_s$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.906-911
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• 2004

In this paper, we used only PR as etching mask, while it used usually Cr/AU as etching mask, and in order to fabricate a photosensor has the increased sensitivity, we investigated on the sensitivity of general type and p-i-n type diode. we designed microchannel size width max 10um, min 5um depth max 10um, reservoir size max 100um, min 2mm. Fabrication of microfluidic devices in glass substrate by glass wet etching methods and glass to glass fusion bonding. The p-i-n diode has higher sensitivity than photodiode. Considering these results, we fabricated p-i-n diodes on the high resistive($4k{\Omega}{\cdot}cm$) wafer into rectangle and finger pattern and compared internal resistance of each pattern. The internal resistance of p-i-n diode can be decreased by the application of finger pattern has parallel resistance structure from $571\Omega$ to $393\Omega$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.397-398
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• 2008

This paper performed the basic study for fabricating the low level laser therapy apparatus, and one of the goals of this paper was to make this apparatus used handily. The apparatus has been fabricated using the 655nm laser diode and microprocessor unit. The apparatus used a 655 nm laser diode for laser medical therapy and was designed for a pulse width modulation type to increase stimulation effects. And then, each experiment was performed to irradiation group and non-irradiation group for cells. MTT assay method was chosen to verify the cell increase of two groups and the effect of irradiation on cell proliferation was examined by measuring 590nm transmittance of ELISA reader. As a result, the cell increase of cells was verified in irradiation group as compared to non-irradiation group.

• JSTS:Journal of Semiconductor Technology and Science
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• v.5 no.2
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• pp.69-76
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• 2005

Interface-trap density, lifetime and Schottky barrier height of erbium-silicided Schottky diode are evaluated using equivalent circuit method. The extracted interface trap density, lifetime and Schottky barrier height for hole are determined as $1.5{\times}10^{13} traps/cm^2$, 3.75 ms and 0.76 eV, respectively. The interface traps are efficiently cured by $N_2$ annealing. Based on the diode characteristics, various sizes of erbium- silicided/platinum-silicided n/p-type Schottky barrier metal-oxide-semiconductor field effect transistors (SB-MOSFETs) are manufactured from 20 m to 35nm. The manufactured SB-MOSFETs show excellent drain induced barrier lowering (DIBL) characteristics due to the existence of Schottky barrier between source and channel. DIBL and subthreshold swing characteristics are compatible with the ultimate scaling limit of double gate MOSFETs which shows the possible application of SB-MOSFETs in nanoscale regime.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.28 no.1
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• pp.66-71
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• 2004

Airborne contaminant particles are intruded into optical disk drive(ODD) due to the flow caused by disk rotation and can be adhered to objective lens, which causes read/write errors. Such a phenomenon can be a serious problem for high-density storage devices. The purpose of this paper is to understand the effect of particle contamination of objective lens in a CD-ROM drive on laser diode power and photo diode RF signal. The measurements of laser power and readout RF signal were carried out by using a laser power meter and a time interval analyzer, respectively. The parameters for estimating a readout-signal' distortion were its jitter and amplitude. Alumina(Al$_2$O$_3$) particles were used as test dust particles. The results show that the failure for data access happened as the degree of lens contamination was greater than 20％.

• Journal of Mechanical Science and Technology
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• v.17 no.1
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• pp.139-145
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• 2003

Diode laser sensor is conducted to measure the gas temperature in the liquid-gas 2-phase counter flow flame. C$\_$10/H/ sub 22/ and city gas were used as liquid fuel and gas fuel, respectively. Two vibrational overtones of H$_2$O were selected and measurements were carried out in the spray flame region stabilized the above gaseous premixed flame. The path-averaged temperature measurement using diode laser absorption method succeeded in the liquid fuel combustion environment regardless of droplets of wide range diameter. The path-averaged temperature measured in the post flame of liquid-gas 2-phase counter flow flame showed qualitative reliable results. The successful demonstration of time series temperature measurement in the liquid-gas 2-phase counter flow flame gave us motivation of trying to establish the effective control system in practical combustion system. These results demonstrated the ability of real-time feedback from combustor inside using the non-intrusive measurement as well as the possibility of application to practical combustion system. Failure case due to influence of spray flame was also discussed.

• Journal of the Korean Society for Precision Engineering
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• v.25 no.3
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• pp.93-100
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• 2008

Laser interferometry is widely used as a measuring system in many fields because of its high resolution and ability to measure a broad area in real-time all at once. In conventional LASER interferometry, for example Out-of-plane ESPI(Electronic Speckle Pattern Interferometry), In plane ESPI, Shearography and Holography, it uses PZT or other components as a phase shift instrumentation to extract 3D deformation data, vibration mode and others. However, in most cases PZT has some disadvantages, which include nonlinear errors and limited time of use. In the present study, a new type of LASER interferometry using a laser diode is proposed. Using LASER Diode Sinusoidal Phase Modulating (LD-SPM) interferometry, the phase modulation can be directly modulated by controlling the LASER Diode injection current thereby eliminating the need for PZT and its components. This makes the interferometry more compact. This paper reports on a new approach to the LD Modulating interferometry that involves four-buckets phase shift method. This study proposes a four-bucket phase mapping algorithm, which was developed to have a guaranteed application, to stabilize the system in the field and to be a user-friendly GUI. In this paper, the theory for LD wavelength modulation and sinusoidal phase modulation of LD modulating interferometry is shown. Four-bucket phase mapping algorithm is then introduced.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.2
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• pp.7-12
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• 2007

A SPICE-based 3-dimensional circuit model of LED(Light-Emitting Diode) was developed for the design optimization and analysis of high-brightness LEDs. An LED is represented as an array of pixel LEDs with small preassigned areas, and each of the pixel LEDs is composed of circuit networks representing the thin-film layers(n-metal, n- and p-type semiconductor layers, and p-metal), ohmic contacts, and pn-junctions. Each of the thin-film layers and contact resistances is modeled by a resistance network, and the pn-junction is modeled by a conventional pn-junction diode. It has been found that the simulation results using the model and the corresponding parameters precisely fit the measured LED characteristics.