• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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• pp.383-388
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• 2004

In this paper an alternative Active Matrix LCD technology is described with scalable, low cost processing. The Dual Select Diode AMLCD requires 60% lower capital investment in the array process than a-Si TFT arrays and results in 20% lower cost LCD modules. Development at several AMLCD manufacturers is in progress.

• 한국광학회:학술대회논문집
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• 한국광학회 1990년도 제5회 파동 및 레이저 학술발표회 5th Conference on Waves and lasers 논문집 - 한국광학회
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• pp.79-81
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• 1990

Temperature distribution of laser diode chip mounted on ideal heat kink was calculated by numerical analysis. In numerical analysis, infinite difference method and Gauss-Scidel iteration was adopted on the basis of two dimensional heat conduction phenomena. As a result, temperature increase of active medium of laser diode driven at 60mA was calculated to be 1.47$^{\circ}C$

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2010년도 춘계학술대회 논문집
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• pp.179-180
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• 2010

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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• pp.873-877
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• 2005

Recent developments in Dual Select Diode (DSD) AMLCD technology are described. They include a novel array design and drive method with shared select lines, which leads to higher aperture ratio and a further reduction of module cost. A Color-On-Array DSD process and pixel layout compatible with In-Plane-Switching is also proposed.

• 한국광학회:학술대회논문집
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• 한국광학회 2000년도 제11회 정기총회 및 00년 동계학술발표회 논문집
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• pp.276.1-277
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• 2000

Absorptive bistable laser diode was analyzed by using traveling wave model in conjunction with the finite-difference method. Carrier and photon density distributions were calculated and the output characteristics were obtained. The results for both the steady-state and transient (switching) cases were compared with those of the rate equation approach.

• 한국광학회:학술대회논문집
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• 한국광학회 2009년도 창립 20주년기념 특별학술발표회
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• pp.86-87
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• 2009

• 한국광학회:학술대회논문집
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• 한국광학회 1999년도 제16회 광학 및 양자전자 학술발표회Proceedings of 16th Optics and Quantum Electronics Conference, 1999
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• pp.222-223
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• 1999

The structural dependence of harmonic and intermodulation distortion characteristics in 1.55${\mu}{\textrm}{m}$ DFB-LCD were investigated. The linearity of 1.55${\mu}{\textrm}{m}$ DFB-LD was greatly improved by employing a partially corrugated structure.

• 자연과학논문집
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• 제1권
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• pp.15-20
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• 1987

• 한국광학회:학술대회논문집
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• 한국광학회 1989년도 제4회 파동 및 레이저 학술발표회 4th Conference on Waves and lasers 논문집 - 한국광학회
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• pp.169-171
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• 1989

The curved active layer inner stripe(CALIS) laser diode has been developed. The tight confinements of current and carrier result in low thershold current(20-30mA) with stable fundamental transverse mode operation up to the output power of 30mW CW.

• Journal of Periodontal and Implant Science
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• 제40권3호
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• pp.105-110
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• 2010

Purpose: It has been reported that low-level semiconductor diode lasers could enhance the wound healing process. The periodontal ligament is crucial for maintaining the tooth and surrounding tissues in periodontal wound healing. While low-level semiconductor diode lasers have been used in low-level laser therapy, there have been few reports on their effects on periodontal ligament fibroblasts (PDLFs). We performed this study to investigate the biological effects of semiconductor diode lasers on human PDLFs. Methods: Human PDLFs were cultured and irradiated with a gallium-aluminum-arsenate (GaAlAs) semiconductor diode laser of which the wavelength was 810 nm. The power output was fixed at 500 mW in the continuous wave mode with various energy fluencies, which were 1.97, 3.94, and 5.91 $J/cm^2$. A culture of PDLFs without laser irradiation was regarded as a control. Then, cells were additionally incubated in 72 hours for MTS assay and an alkaline phosphatase (ALPase) activity test. At 48 hours post-laser irradiation, western blot analysis was performed to determine extracellular signal-regulated kinase (ERK) activity. ANOVA was used to assess the significance level of the differences among groups (P<0.05). Results: At all energy fluencies of laser irradiation, PDLFs proliferation gradually increased for 72 hours without any significant differences compared with the control over the entire period taken together. However, an increment of cell proliferation significantly greater than in the control occurred between 24 and 48 hours at laser irradiation settings of 1.97 and 3.94 $J/cm^2$ (P<0.05). The highest ALPase activity was found at 48 and 72 hours post-laser irradiation with 3.94 $J/cm^2$ energy fluency (P<0.05). The phosphorylated ERK level was more prominent at 3.94 $J/cm^2$ energy fluency than in the control. Conclusions: The present study demonstrated that the GaAlAs semiconductor diode laser promoted proliferation and differentiation of human PDLFs.