• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.7
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• pp.1652-1656
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• 2014

In this work, we demonstrated a 77 GHz waveguide VCO with transition from WR-12 to WR-10 for anti-collision radar applications. The fabricated waveguide VCO consists of a GaAs-based Gunn diode, a varactor diode, a waveguide transition, and two bias posts for operating as a LPF and a resonator. The cavity is designed for fundamental mode at 38.5 GHz and operated at second hormonic of 77 GHz. The waveguide transition has a 1.86 dB of insertion loss and -30.22 dB of S11 at the center frequency of 77 GHz. The fabricated VCO achieves an oscillation bandwidth of 870 MHz. Output power is from 12.0 to 13.75 dBm and phase noise is -100.78 dBc/Hz at 1 MHz offset frequency from the carrier.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.23 no.7
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• pp.791-796
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• 2012

A RF limiter is a component to protect the receiver front end from undesired signal. A RF limiter is a key component whose output is constant level for all inputs above a critical value. A RF limiter use a diode to pass signals of low power while attenuating those above some threshold. A RF limiter for receiver protection in modern radar systems is playing a vital role in order to meet challenges of new interference threats and complicated electromagnetic environments. This paper proposed a new circuit for high power RF limiter whose structure is the combination of the PIN diode and Limit diode. PIN diode take a use of its isolation characteristics which act as a switch does. A 2 kW RF limiter with 200 us pulse width at S-band was developed. It shows good agreements between estimated value and measured results.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.21 no.3
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• pp.278-284
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• 2010

In this paper, a millimeter-wave detector using zero-bias schottky diode is designed and fabricated at W-band. It consists of LNA(Low Noise Amplifier) and detector module to improve sensitivity. LNA case with a highly stop-band characteristic is designed to prevent the oscillation by LNA MMIC chip. Diode detector of planar structure is fabricated for the easy connection with LNA module and zero bias Schottky diode is utilized. In practice, the fabricated diode detector have shown the detection voltage of 20~500 mV to the RF input power of -45~-20 dBm. The proposed W-band detector can be applicable to the passive millimeter image system.

• Investigative and Clinical Urology
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• v.59 no.6
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• pp.392-398
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• 2018

Purpose: To evaluate the initial experience and outcome of photo-selective vaporization of the prostate (PVP) for benign prostatic hyperplasia (BPH) in Pakistan with the use of a 980 nm diode laser. Materials and Methods: A prospective study was performed from November 2016 to December 2017. A total of 100 patients diagnosed with bladder outlet obstruction secondary to BPH who planned for PVP were enrolled in the study. PVP was carried out with a diode laser at 980 nm (Biolitec Diode 180W laser) in a continuous wave with a 600 nm (twister) fiber. Baseline characteristics and perioperative data were compared. Postoperative outcomes were evaluated by International Prostate Symptom Score (IPSS), post void residual (PVR) and maximum urinary flow rate (Qmax) at 3 and 6 months after surgery. Results: The mean age was $65.82{\pm}10.42$, mean prostate size was $67.35{\pm}16.42$, operative time was $55.85{\pm}18.01$ and total energy was $198.68{\pm}49.12kJ$. At 3 months and 6 months, significant improvements were noted (p<0.001) in IPSS $7.04{\pm}1.69$ (-18.92), Qmax $19.22{\pm}4.75mL/s$ (+13.09) and and PVR $18.89{\pm}5.39mL$ (-112.80). Most frequent problems were burning micturition (35%) and terminal dysuria (29%). No significant difference in postoperative hemoglobin was seen in patients who were on anti-platelet drugs. Conclusions: PVP with a diode laser is a safe and effective procedure for the treatment of BPH and is also safe in patients who are on anti-platelet agents.

• Journal of Dental Rehabilitation and Applied Science
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• v.33 no.3
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• pp.178-188
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• 2017

Purpose: We compared the effects of newly developed diode laser (Bison 808 nm Diode laser) on the treatment of peri-implantitis with conventional products (Picasso 810 nm Diode laser) by comparing the surface temperature of titanium disc and bacterial sterilization according to laser power. Materials and Methods: The titanium disc was irradiated for 60 seconds and 1 - 2.5 W using diode laser 808 nm and 810 nm. The surface temperature of the titanium disc was measured using a temperature measurement module and a temperature measurement program. In addition, in order to investigate the sterilizing effect according to the laser power, 808 nm laser was irradiated after application of bacteria to sandblasted large-grit acid-etched (SLA) and resorbable blast media (RBM) coated titanium discs. The irradiated disks were examined with scanning electron microscopy. Results: Both 808 nm and 810 nm lasers increased disk surface temperature as the power increased. When the 810 nm was irradiated under all conditions, the initial temperature rise rate, the descending rate, and the temperature change before and after was higher than that of 808 nm. Disk surface changes were not observed on both lasers at all conditions. Bacteria were irradiated with 808 nm, and the bactericidal effect was increased as the power increased. Conclusion: When applying these diode lasers to the treatment of peri-implantitis, 808 nm which have a bactericidal effect with less temperature fluctuation in the same power conditions would be considered safer. However, in order to apply a laser treatment in the dental clinical field, various safety and reliability should be secured.

• The Journal of Korean Society for Radiation Therapy
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• v.16 no.1
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• pp.29-37
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• 2004

Purpose : A rectum and a bladder should be carefully considered in order to decrease side effects when HDR patient of uterine cervix cancer. Generally speaking, the value of dosimeter at a rectum and a bladder only depends on the value of a planning equipment, while some analyses of the value of dosimetry at rectum with TLD has been reported Or the contrary, it is hardly to find a report with in vivo dosimetry(diode detector). On this thesis, we would like to suggest the following. When a patient of uterine cervix cancer is in therapy, it is helpful to put a diode detector inside of a rectum in order to measure the rectal dose Based upon the result of the dosimetry, the result can be used as basic data at decreasing side effects. Materials and Methods : Six patients of uterine cervix cancer(four with tandem and ovoid, one with cylinder, and the other one with tandem and cylinder) who had been irradiated with HDR. Ir-192 totally 28 times from February 2003 to June 2003. We irradiated twice in the same distant spots with anterior film and lateral film whenever we measured with a diode detector. Then we did planning and compared each film. Results : The result of the measurement 4 patients with a diode detector is the following. The average and deviation from 3 patients with tandem and ovoid were $274.1{\pm}13.4cGy$, from 1 patient with tandem and ovoid were $126.1{\pm}7.2cGy$, from 1 patient with cylinder were $99.7{\pm}7.1cGy$, and from 1 patient with tandem and cylinder were $77.7{\pm}11.5cGy$. Conclusion : It is difficult to predict how the side effect of a rectum since the result of measurement with a diode detector depends on the state of a rectum. According to the result of the study, it is effective to use a TLD or an in vivo dosimetry and measure a rectum in order to consider the side effect. It is very necessary to decrease the amount of irradiation by controlling properly the duration of the irradiation and gauze packing, and by using shield equipments especially when side effects can be expected.

• Korean Journal of Materials Research
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• v.25 no.4
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• pp.196-201
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• 2015

This paper presents the impact of partial shading on $CuIn_xGa_{(1-x)}Se_2(CIGS)$ photovoltaic(PV) modules with bypass diodes. When the CIGS PV modules were partially shaded, the modules were under conditions of partial reverse bias. We investigated the characterization of the bypass diode and solar cell properties of the CIGS PV modules when these was partially shaded, comparing the results with those for a crystalline silicon module. In crystalline silicon modules, the bypass diode was operated at a partial shade modules of 1.67 % shading. This protected the crystalline silicon module from hot spot damage. In CIGS thin film modules, on the other hand, the bypass diode was not operated before 20 % shading. This caused damage because of hotspots, which occurred as wormlike defects in the CIGS thin film module. Moreover, the bypass diode adapted to the CIGS thin film module was operated fully at 60% shading, while the CIGS thin film module was not operated under these conditions. It is known that the bypass diode adapted to the CIGS thin film module operated more slowly than that of the crystalline silicon module; this bypass diode also failed to protect the module from damage. This was because of the reverse saturation current of the CIGS thin film, $1.99{\times}10^{-5}A/cm^2$, which was higher than that of crystalline silicon, $8.11{\times}10^{-7}A/cm^2$.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.20 no.2
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• pp.306-316
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• 2016

In this paper, an NMOS-diode eFuse OTP (One-Time Programmable) memory cell is proposed using a parasitic junction diode formed between a PW (P-Well), a body of an isolated NMOS (N-channel MOSFET) transistor with the small channel width, and an n+ diffusion, a source node, in a DNW (Deep N-Well) instead of an NMOS transistor with the big channel width as a program select device. Blowing of the proposed cell is done through the parasitic junction formed in the NMOS transistor in the program mode. Sensing failures of '0' data are removed because of removed contact voltage drop of a diode since a NMOS transistor is used instead of the junction diode in the read mode. In addition, a problem of being blown for a non-blown eFuse from a read current through the corresponding eFuse OTP cell is solved by limiting the read current to less than $100{\mu}A$ since a voltage is transferred to BL by using an NMOS transistor with the small channel width in the read mode.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.13 no.1
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• pp.64-71
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• 2020

eFuse OTP memory IP is required to trim the analog circuit of the gate driving chip of the power semiconductor device. Conventional NMOS diode-type eFuse OTP memory cells have a small cell size, but require one more deep N-well (DNW) mask. In this paper, we propose a small PMOS-diode type eFuse OTP memory cell without the need for additional processing in the CMOS process. The proposed PMOS-diode type eFuse OTP memory cell is composed of a PMOS transistor formed in the N-WELL and an eFuse link, which is a memory element and uses a pn junction diode parasitic in the PMOS transistor. A core driving circuit for driving the array of PMOS diode-type eFuse memory cells is proposed, and the SPICE simulation results show that the proposed core circuit can be used to sense post-program resistance of 61㏀. The layout sizes of PMOS-diode type eFuse OTP memory cell and 512b eFuse OTP memory IP designed using 0.13㎛ BCD process are 3.475㎛ × 4.21㎛ (= 14.62975㎛2) and 119.315㎛ × 341.95㎛ (= 0.0408mm2), respectively. After testing at the wafer level, it was confirmed that it was normally programmed.

• The Journal of Korean Society for Radiation Therapy
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• v.15 no.1
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• pp.67-77
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• 2003

I. Purpose Uniform dose distribution of the whole body is essential factor for the total body irradiation(TBI). In order to achieved this goal, we used to compensation filter to compensate body contour irregularity and thickness differences. But we can not compensate components of body, namely lung or bone. The purpose of this study is evaluation of dose attenuation in bone tissue when TBI using diode detectors and TLD system. II. Materials and Methods The object of this study were 5 patients who undergo TBI at our hospital. Dosimetry system were diode detectors and TLD system. Treatment method was bilateral and delivered 10MV X-ray from linear accelerator. Measurement points were head, neck, pelvis, knees and ankles. TLD used two patients and diode detectors used three patients. III. Results Results are as followed. All measured dose value were normalized skin dose. TLD dosimetry : Measured skin dose of head, neck, pelvis, knees and ankles were $92.78{\pm}3.3,\;104.34{\pm}2.3,\;98.03{\pm}1.4,\;99.9{\pm}2.53,\;98.17{\pm}0.56$ respectably. Measured mid-depth dose of pelvis, knees and ankles were $86{\pm}1.82,\;93.24{\pm}2.53,\;91.50{\pm}2.84$ respectably. There were $6.67\%{\sim}11.65\%$ dose attenuation at mid-depth in pelvis, knees and ankles. Diode detector : Measured skin dose of head, neck, pelvis, knees and ankles were $95.23{\pm}1.18,\;98.33{\pm}0.6,\;93.5{\pm}1.5,\;87.3{\pm}1.5,\;86.90{\pm}1.16$ respectably. There were $4.53\%{\sim}12.6\%$ dose attenuation at mid-depth in pelvis, knees and ankles. IV. Conclusion We concluded that dose measurement with TLD or diode detector was inevitable when TBI treatment. Considered dose attenuation in bone tissue, We must have adequately deduction of compensator thickness that body portion involved bone tissue.