• Korean Journal of Optics and Photonics
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• v.15 no.4
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• pp.369-374
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• 2004

In this paper, we propose a new tunable laser diode structure. The laser diode consists of a sampled-grating distributed feedback laser diode monolithically integrated with a sampled-grating distributed-Brags-Reflector. For a specific design, the possibility of continuous/discrete wavelength tuning over 27nm is confirmed by a numerical analysis using a split-step time domain model. Because the laser diode can be directly coupled with optical fiber without the intervention of the passive section, the laser diode exhibits higher output power than the conventional laser diode.

• Proceedings of the KIEE Conference
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• 2001.10a
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• pp.192-195
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• 2001

In this report, we firstly have investigated the electrical characteristics of silicon carbide (SiC) schottky barrier diode and compared the characteristics to those of conventional Si diode through simulation and experiment. Secondly we have investigated the influence of two kinds of diodes to the power conversion circuit of the systems. From the investigation results it is verified that SiC schottky barrier diode is more superior to Si diode in thermal and reverse recovery, characteristics, which are the important factors in the size reduction and higher reliability of the systems. Finally though the experiment applied to PFC(Power Factor Correction) circuits, we precisely verified excellency to thermal characteristic of SiC schottky barrier diode any other diode.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2009.10a
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• pp.503-505
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• 2009

In this paper, we research the method for write quality improvement by temperature characteristic of Laser diode for optical recording. Differential Resistance of Blu-ray laser diode is changed by temperature. We analyze the effect of the change of the differential resistance and propose the method for the write quality improvement.

• Proceedings of the KIEE Conference
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• 1998.07f
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• pp.1857-1859
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• 1998

This paper proposes a circuit technique that reduces losses cauased by reverse-recovery characteristics of the diode in converters. In high voltage, high power, Reverse recovery characteristics of the diode gives large stresses to switching devices. To solve the problem, we propose a circuit with active snubber between diode and switch. By controling di/dt rate of thr diode, the proposed technique reduces the losses and the stresses of switching devices.

• Progress in Medical Physics
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• v.1 no.1
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• pp.91-95
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• 1990

The solid state detector system was constructed using commercially available rectifier diode for the assessment of quality assurance in radiotherapy. Dosimetry system which consists of the electrometer and the water phanton was used for measuring small field size scanning. The measured results, which had linearity in accordance with variation of radiation dose for gamma-ray of Co- 60 and 6 and 10MV photons of linear accelerator, showed quite linear characteristics within 1% error. The percent depth dose of 10MV photon of Mevatron KD linear accelerator was measured in small field size using diode, and the results were compared with that of using ion chambers. The results show that the difference of percent depth dose between the value of diode and that of ion chamber was negligible in large field size. However, in small size less than 4$\times$4cm, the difference of percent depth dose estimated by diode and ion chamber was 4.7% by extrapolation to 0$\times$0cm. Considering the smaller volume of diode than that of ion chamber, it might be more reliable to use diode for estimating percent depth dose. Above results suggest that diode can be used for routine check such as beam profile, flatness, symmetry and energy

• Journal of Electrical Engineering and Technology
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• v.10 no.3
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• pp.1066-1074
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• 2015

This paper presents the reverse recovery characteristic according to the change of switching states when Si diode and SiC diode are used as clamp diode and proposes a method to minimize the switching loss containing the reverse recovery loss in the neutral-point-clamped inverter at low modulation index. The previous papers introduce many multiple circuits replacing Si diode with SiC diode to reduce the switching loss. In the neutral-point-clamped inverter, the switching loss can be also reduced by replacing device in the clamp diode. However, the switching loss in IGBT is large and the reduced switching loss cannot be still neglected. It is expected that the reverse recovery effect can be infrequent and the switching loss can be considerably reduced by the proposed method. Therefore, it is also possible to operate the inverter at the higher frequency with the better system efficiency and reduce the volume, weight and cost of filters and heatsink. The effectiveness of the proposed method is verified by numerical analysis and experiment results.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.205-208
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• 2001

Steady state and transient thermal analysis has been done by a finite element method in a diode of 12kV blocking voltage for microwave oven. The diode was fabricated by soldering ten pieces of 1200V diodes in series, capping a dummy wafer at the far end of diode series, and finally copper wire bonded for building anode and cathode terminal. In order to achieve high voltage and reliability, the edge of each diode was beveled and passivated by resin and epoxy with a thickness of $25{\mu}m$ and $3700{\mu}m$, respectively. The chip size, thickness and material properties were very important factor for high voltage diode package. And also, thermal stress value was highest in the edge of diode and solder. So, design of edge in silicon was very important to thermal stress.

• Journal of radiological science and technology
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• v.23 no.2
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• pp.27-32
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• 2000

It was produced radiation dosimeter used photo-diodes for which ionization by x-ray was applied and evaluated the value of utility in clinics as compared with ion-chamber. The result obtained were as follows : 1. Comparison of ion-chamber with photo-diode dosimeter's x-ray output by the change of x-ray tube voltage, and the ratio of ion-chamber to diode was $0.96{\sim}1.02$ which was not affected by x-ray beam quality. 2. The ratio of ion-chamber to diode was 0.96 by change of tube current and 0.97 by change of exposure time that is not affected by x-ray quantity. 3. The ratio of ion-chamber to diode was $0.97{\sim}1.04$ by thickness and $0.93{\sim}1.10$ by radiation field that is little affected by second ray quantity. 4. Reproducibility of photo-diode dosimeter was 0.011(CV) and it is a good result. 5. Photo-diode dosimeter was affected by the surface angle of detector over 30 degrees. Produced dosimeter was small, light, and meets good result compared with ionization chamber. It was expected come into wide use in clinic.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.5
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• pp.431-435
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• 2009

The apparatus has been fabricated using the laser diode and microprocessor unit. The apparatus used a InGaAlP laser diode for laser medical therapy and was designed for a pulse width modulation type to increase stimulation effects. To raise the stimulus effect of the human body, the optical irradiation frequency could be set up. The study has executed in-vivo experiment by employing our own developed laser diode irradiation system to investigate the effects of the InGaAlP laser diode irradiation on the wound healing as a preliminary study aimed at the application of InGaAlP laser diode to wound healing of human skin injury. The study cut out whole skin layers of Sprague-Dawley rat on the back part in 1 cm circle and observed developing effects after executing light irradiation for 9 days, and in result it is found that the light irradiation rat showed earlier wound healing than non-irradiation rat during the experimental period. In addition, there are some differences found regarding the healing process between laser diode irradiated rats and non-irradiated ones.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.205-208
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• 2001

Steady state and transient thermal analysis has been done by a finite element method in a diode of 12kV blocking voltage for microwave oven. The diode was fabricated by soldering ten pieces of 1200V diodes in series, capping a dummy wafer at the far end of diode series, and finally copper wire bonded for building anode and cathode terminal. In order to achieve high voltage and reliability, the edge of each diode was beveled and passivated by resin and epoxy with a thickness of 25$\mu\textrm{m}$ and 3,700$\mu\textrm{m}$, respectively. The chip size, thickness and material properties were very important factor for high voltage diode package. And also, thermal stress value was highest in the edge of diode and solder. So, design of edge in silicon was very important to thermal stress.