Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)

The Korean Institute of Electrical Engineers (대한전기학회)
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Power Conversion Circuits using SiC Schottky Barrier Diode

SiC 다이오드를 이용한 전력변환회로

  • Lee, Yoo-Shin (Dept. of E.E.C. Eng., Hanyang University) ;
  • Oh, Duk-Jin (Dept. of Electrical Eng., Hanyang University) ;
  • Kim, Hee-Jun (School of Electrical & Computer Science Eng., Hanyang University)
  • 이유신 (한양대학교 전자전기제어계측공학과) ;
  • 오덕진 (한양대학교 전기공학과) ;
  • 김희준 (한양대학교 전자 컴퓨터공학부)
  • Published : 2001.10.26
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Abstract

In this report, we firstly have investigated the electrical characteristics of silicon carbide (SiC) schottky barrier diode and compared the characteristics to those of conventional Si diode through simulation and experiment. Secondly we have investigated the influence of two kinds of diodes to the power conversion circuit of the systems. From the investigation results it is verified that SiC schottky barrier diode is more superior to Si diode in thermal and reverse recovery, characteristics, which are the important factors in the size reduction and higher reliability of the systems. Finally though the experiment applied to PFC(Power Factor Correction) circuits, we precisely verified excellency to thermal characteristic of SiC schottky barrier diode any other diode.

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