• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.237-238
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• 2008

본 연구에서는 APD 소자 제작시 주로 쓰이는 RTA에 의한 Zn 확산방법에 사용할 경우 undoped InP의 V/III비율에 따른 Zn원자의 확산, 도핑, 오믹저항의 성장을 조사하였다. RTA에 의한 확산 및 활성화 열처리 시 도핑 농도의 프로파일은 확산열처리만 한 경우보다 활성화 처리한 경우 더 커짐을 볼 수 있었다. SIMS 결과 활성화 처리 후 표면쪽에 Zn원자의 약간의 결핍현상을 보이는 데 이는 표면쪽에 Zn원자의 탈착이 약간 이루어지는 것으로 보인다. 이 원인은 결과적으로 오믹저항의 증가를 가져왔다.

• 한국세라믹학회지
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• 제54권5호
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• pp.429-437
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• 2017

Micro hollow plate type silica with low refraction properties was synthesized and its hollow structure was applied as an optical structure to develop a light diffusion material that simultaneously satisfies the requirements of good light diffusibility, high transmissibility, and high luminance. The developed light diffusion material was applied to a light diffusion film and the film's optical properties were assessed. Hollow silica was synthesized by precipitation method using $Mg(OH)_2$ core particles, sodium silicate, and ammonium sulfate as the silica precursors. The concentration of the silica precursor was adjusted to control hollow silica shell thickness. The total light transmittance of the light diffusion film composed of the hollow silica was 94.55%, which was 4.57% higher than that of the PC film; new film's haze was 71.20%, which was 70.9% higher. Furthermore, the luminance increased by 5.34% compared to that of the light source. The reason for the results is not only that the micro plate type hollow silica, which has a low refractive property, played a role in reducing the difference in refractive index between the medium boundaries, but also that there was a light-concentrating effect due to the changing of light paths to the front direction inside the hollow structure. Optical simulation verified the enhanced optical properties when hollow silica was applied to the light diffusion film.

• 전자공학회논문지D
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• 제35D권1호
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• pp.84-93
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• 1998

Planar graded index optical waveguides have been formed by Ag$^{+}$ ion exchange in the BK7 optical glass. The experimental results of diffusion and modal characteristics of Ag$^{+}$-Na$^{+}$ exchanged BK7 glass waveguides are presented. Measurements of the mode indices have been measured. We found the relations between the process and device parameters such as the diffusion depth and the square root of the diffusion time, diffusion coefficient and diffusion temperature, and diffusion ion concentration and surface index change. A theoretical gaussian function refractive index profile matched best with the measured data for all the guided modes. The empirical relations between the process and the device parameters are derived and subsequently used to formulate a systematic procedure for fabricating singlemode and multimode waveguides.uides.

• JSTS:Journal of Semiconductor Technology and Science
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• 제10권3호
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• pp.213-224
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• 2010

An optically controlled silicon MESFET (OPFET) was fabricated by diffusion process to enhance the quantum efficiency, which is the most important optoelectronic device performance usually affected by ion implantation process due to large number of process induced defects. The desired impurity distribution profile and the junction depth were obtained solely with diffusion, and etching processes monitored by atomic force microscope, spreading resistance profiling and C-V measurements. With this approach fabrication induced defects are reduced, leading to significantly improved performance. The fabricated OPFET devices showed proper I-V characteristics with desired pinch-off voltage and threshold voltage for normally-on devices. The peak photoresponsivity was obtained at 620 nm wavelength and the extracted external quantum efficiency from the photoresponse plot was found to be approximately 87.9%. This result is evidence of enhancement of device quantum efficiency fabricated by the diffusion process. It also supports the fact that the diffusion process is an extremely suitable process for fabrication of high performance optoelectronic devices. The maximum gain of OPFET at optical modulated signal was obtained at the frequency of 1 MHz with rise time and fall time approximately of 480 nS. The extracted transconductance shows the possible potential of device speed performance improvements for shorter gate length. The results support the use of a diffusion process for fabrication of high performance optoelectronic devices.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제52권10호
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• pp.451-457
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• 2003

The silicon wafer is stable status at room temperature, but it is weak at high temperatures which is necessary for it to be fabricated into a power semiconductor device. During thermal diffusion processing, a high temperature produces a variety thermal stress to the wafer, resulting in device failure mode which can cause unwanted oxide charge or some defect. This disrupts the silicon crystal structure and permanently degrades the electrical and physical characteristics of the wafer. In this paper, the electrical characteristics of a single oxide layer due to high temperature diffusion process, wafer resistivity and thickness of polyback was researched. The oxide quality was examined through capacitance-voltage characteristics, defect density and BMD(Bulk Micro Defect) density. It will describe the capacitance-voltage characteristics of the single oxide layer by semiconductor process and device simulation.

• 한국산학기술학회논문지
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• 제19권7호
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• pp.36-41
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• 2018

미광증폭장비는 밤과 같이 어두운 환경에서 주로 가시광선 대역의 약한 빛을 증폭시켜 육안으로 관측할 수 있을 정도의 밝기로 만들어주는 장비이다. 이러한 방식은 어느 정도의 약한 빛이 존재하는 환경에서는 그 증폭 효과를 제대로 발휘하여 선명한 영상을 얻을 수 있지만, 달빛조차 존재하지 않는 극 저조도 환경에서는 기본적으로 증폭시킬 빛이 부족하여 출력 영상에 많은 노이즈로 인하여 화면의 선명도가 저하된다. 본 연구에서는 이러한 극 저조도 환경에서 발생하는 미광증폭 장비의 출력 노이즈를 다중 필터와 이방성 확산을 이용하여 화질을 개선하는 방법을 제안하였다. 실험을 위하여 극 저조도 조건에 맞는 환경을 구성한 상태에서 미광증폭장비의 출력 영상을 촬영한 후, 화질 개선을 위한 신호처리를 하였다. 신호처리를 위한 필터의 구성은 영상에 나타나는 주된 노이즈인 점 노이즈 제거와 가우시안 노이즈의 효과적인 제거를 위하여 메디안 필터, 위너 필터를 적용시킨 후 이방성 확산을 이용하였다. 실험 결과 화질이 개선됨을 육안으로 확인할 수 있었고, 정량 지표인 PSNR 및 SSIM으로 비교하여 측정한 방법에서도 모두 개선된 값을 보여주었다.

• Archives of Pharmacal Research
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• 제10권2호
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• pp.88-93
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• 1987

Chitosan ($\beta$-D-glucosaminan) is chemically prepared from chitin (N-acetyl-$\beta$- D-glucosaminan) which is an unutilized natural resource. We now report on the suitability of the chitosan matrix for use as vehicles for the controlled release of drugs. Salicylic acid and aspirin were used as model drugs in this study. The permeation of salicylic acid in the chitosan membranes was determined in a glass diffusion cell with two compartments of equal volume. Drug release studies on the devices were conducted in a beaker containing 5% sodium hydroxide solution. Partition coefficient (Kd) value for acetate membrane (472) is much greater than that for fluoro-perchlorate chitosan membrane (282). Higher Kd value for acetate chitosan membrane appears to be inconsisstent with the bulk salicylic acid concentration. The permeability constants of fluoro-perchlorate and acetate chisotan membranes for salicylic acid were 3.139 ${\times}10^{-7}cm^2$ min up to 60 min and that of 30% aspirin in the devices was 4.739${\times}10^{-7}cm^2$sec upto 60 min. As the loading dose of aspirin in a chitosan device increased, water up-take of chitosan device increased, but in case of salicylic acid it decreased. The release rate increased with increase in the molecular volume of the drugs. Thses result suggest that the release mechanism may be controlled mainly by diffusion through pores.

• JSTS:Journal of Semiconductor Technology and Science
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• 제5권2호
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• pp.136-147
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• 2005

A theoretical design evaluation based on a hydrodynamic transport simulation of strained Si-SiGe on insulator (SSOI) type nMOSFETs is reported. Although, the net performance improvement is quite limited by the short channel effects, simulation results clearly show that the strained Si-SiGe type nMOSFETs are well-suited for gate lengths down to 20 nm. Simulation results show that the improvement in the transconductance with decreasing gate length is limited by the long-range Coulomb scattering. An influence of lateral and vertical diffusion of shallow dopants in the source/drain extension regions on the device performance (i.e., threshold voltage shift, subthreshold slope, current drivability and transconductance) is quantitatively assessed. An optimum layer thickness ($t_{si}$ of 5 and $t_{sg}$ of 10 nm) with shallow Junction depth (5-10 nm) and controlled lateral diffusion with steep doping gradient is needed to realize the sub-50 nm gate strained Si-SiGe type nMOSFETs.

• 한국산업융합학회 논문집
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• 제4권3호
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• pp.329-337
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• 2001

This simulator is developed for the analysis of a MOSFET based on Thermally Coupled Energy Transport Model(TCETM). The simulator has the ability to calculate not only stationary characteristics but also non - stationary characteristics of a MOSFET. It solves basic semiconductor devices equations including Possion equation, current continuity equations for electrons and holes, energy balance equation for electrons and heat flow equation, using finite difference method. The conventional semiconductor device simulation technique, based on the Drift-Diffusion Model (DDM), neglects the thermal and other energy-related properties of a miniaturized device. I, therefore, developed a simulator based on the Thermally Coupled Energy Transport Model (TCETM) which treats not only steady-state but also transient phenomena of such a small-size MOSFET. In particular, the present paper investigates the breakdown characteristics in transient conditions. As a result, we found that the breakdown voltage has been largely underestimated by the DDM in transient conditions.

• Transactions on Electrical and Electronic Materials
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• 제18권4호
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• pp.225-228
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• 2017

In this study, zinc tin oxide (ZTO) films were prepared on indium tin oxide (ITO) glasses and annealed at different temperatures under vacuum to investigate the correlation between the Ohmic/Schottky contacts, electrical properties, and bonding structures with respect to the annealing temperatures. The ZTO film annealed at $150^{\circ}C$ exhibited an amorphous structure because of the electron-hole recombination effect, and the current of the ZTO film annealed at $150^{\circ}C$ was less than that of the other films because of the potential barrier effect at the Schottky contact. The drift current as charge carriers was similar to the leakage current in a transparent thin-film device, but the diffusion current related to the Schottky barrier leads to the decrease in the leakage current. The direction of the diffusion current was opposite to that of the drift current resulting in a two-fold enhancement of the cut-off effect of leakage drift current due to the diffusion current, and improved performance of the device with the Schottky barrier. Hence, the thin film with an amorphous structure easily becomes a Schottky contact.