• 제목/요약/키워드: Diffraction pattern

검색결과 675건 처리시간 0.023초

Texture Electron Diffraction Pattern에 의한 결정구조 해석 (Crystal Structure Analysis by Texture Electron Diffraction Pattern)

  • 이수정;주형태;김윤중;문희수
    • Applied Microscopy
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    • 제32권3호
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    • pp.185-193
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    • 2002
  • Texture electron diffraction pattern을 이용한 결정구조 해석 이론은 러시아어로 씌여졌거나, 영문판 저서의 일부에 간단히 소개 되어있어 이해에 어려움이 있다. 이들의 이론은 벡터의 이론과 관련된 여러 관계식을 이용해서 설명될 수 있으며, 이로서 몇 개의 식에 포함된 오류를 수정하였다.

도트 패턴을 이용한 회절 격자 금형 제작 (Fabrication of Diffraction Grating Mold Using Dot Pattern)

  • 노지환;이제훈;손현기;서정;신동식;정용운
    • 한국레이저가공학회지
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    • 제9권3호
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    • pp.1-5
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    • 2006
  • Diffraction grating is the optical device which has periodic pattern. Decorative logotypes is the one of application of diffraction grating. In this paper diffraction grating for decorative logotype is fabricated by dot pattern in stead of line pattern. A metallic mold for diffraction gratings is fabricated with a mode-locked 12 ps Nd:YVO4 laser. Laser pulses with a wavelength of 355nm are irradiated on the surface of NOK 80, a mold material, to generate dot patterns. In order to minimize the dot diameter, laser power is set just above the ablation threshold of NOK 80. Results show that the spectrum from the fabricated mold is good enough for some industrial application

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도트 패턴을 이용한 회절 격자 금형 제작 (Fabrication of diffraction grating mold using dot pattern)

  • 노지환;이제훈;손현기;서정;신동식;정용운
    • 한국레이저가공학회:학술대회논문집
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    • 한국레이저가공학회 2006년도 추계학술발표대회 논문집
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    • pp.114-117
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    • 2006
  • Diffraction grating is the optical device which has periodic pattern. Decorative logotypes is the one of application of diffraction grating. In this paper diffraction grating for decorative logotype is fabricated by dot pattern in stead of line pattern. A metallic mold for diffraction gratings is fabricated with a mode-locked 12 ps $Nd:YVO_4$ laser. Laser pulses with a wavelength of 355nm are irradiated on the surface of NOK 80, a mold material, to generate dot patterns. In order to minimize the dot diameter, laser power is set just above the ablation threshold of NOK 80. Results show that the spectrum from the fabricated mold is good enough for some industrial application.

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회절무늬를 이용한 미세물체의 특성 측정 (Characterization of Microscale Objects based on the Diffraction Pattern Analysis)

  • 강기호;전형욱;손정영;오명환
    • 한국광학회지
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    • 제2권1호
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    • pp.1-6
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    • 1991
  • 회절현상을 이용하여 복수 미세 입자의 특성 측정을 위한 격자형의 검지기를 사용한 데이터 처리방식을 제안하고 이에 따른 광학 및 신호처리 시스템을 구성하였다. 에너지 분포함수의 최대치와 최소치를 이용하여 같은 분무기로 분무된 증류수, 알코올, 실리콘 오일, 글리세린 등의 분포를 측정했는데 최대치와 최소치에 의해 구한 입자의 크기가 서로 잘 일치하였다.

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광학 마이크로 피라미드 패턴의 제조 및 광특성 해석 (Fabrication and analysis of optical micro-pyramid array-patterns)

  • 이재령;전은채;제태진;우상원;최두선;유영은;김휘
    • 한국기계가공학회지
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    • 제13권4호
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    • pp.7-12
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    • 2014
  • A transparent poly methyl methacrylate (PMMA) optical micro-pyramid array-pattern is designed and fabricated using an injection modeling technique. The device's optical characteristics are tested and analyzed theoretically. In the optical pattern generated using the fabricated PMMA pattern, the components, due to not only refraction but also diffraction, are observed simultaneously. Wave optic modeling and analysis reveals that the energy ratio between the diffraction and refraction in the optical pattern are dependent on the critical dimension of the optical pattern such that the refraction and diffraction tend to be directly and inversely proportional to the pattern dimension, respectively.

컴퓨터 홀로그래피와 프레넬 회절을 이용한 위상 영상 광 암호화 시스템 (Fully Phase-based Optical Encryption System Using Computer Holography and Fresnel Diffraction)

  • 윤경효;신창목;조규보;김수중;김철수;서동환
    • 대한전자공학회논문지SD
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    • 제41권11호
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    • pp.43-51
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    • 2004
  • 본 논문에서는 원 영상의 컴퓨터 생성 홀로그램(computer generated hologram; CGH) 패턴을 위상 변조한 후, 위상 부호화한 무작위 키 영상들의 프레넬 회절(Fresnel difftaction) 위상 패턴과 곱하여 암호화함으로써 외부 교란이나 절단에 강하고, 암호화 수준이 높은 광 암호화 방법을 제안하였다. 암호화시 원 영상의 이진 CGH패턴을 위상 변조한 후, 이를 위상 키 영상들의 프레넬 회절 공액 위상정보와 곱하며, 복호화시 암호화 영상에 위상 키 영상들의 프레넬 회절 위상 정보를 다시 곱한 후 푸리에 변화시켜 원 영상 정보를 얻는다. 암호화 영상은 CGH 패턴 특성을 가지므로, 절단이나 외부 잡음에 강하며 프레넬 회절 정보를 이용하여 암호화함으로 높은 암호화 수준을 가진다. 컴퓨터 모의 실험을 통해 제안한 방법의 타당성을 확인하였으며 절단과 잡음에 대한 영향을 분석하였고, 위상 변조 특성이 있는 LCD를 사용하여 광학적으로 구현하였다.

X-Ray Diffraction Analysis of Various Calcium Silicate-Based Materials

  • An, So-Youn;Lee, Myung-Jin;Shim, Youn-Soo
    • 치위생과학회지
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    • 제22권3호
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    • pp.191-198
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    • 2022
  • Background: The purpose of this study was to evaluate the composition of the crystal phases of various calcium silicate-based materials (CSMs): ProRoot white MTA (mineral trioxide aggregate) (WMTA), Ortho MTA (OM), Endocem MTA (EM), Retro MTA (RM), Endocem Zr (EN-Z), BiodentineTM (BD), EZ-sealTM (EZ), and OrthoMTA III (OM3). Methods: In a sample holder, 5 g of the powder sample was placed and the top surface of the material was packed flat using a sterilized glass slide. The prepared slides were mounted on an X-ray diffraction (XRD) instrument (D8 Advance; Bruker AXS GmbH, Germany). The X-ray beam 2θ angle range was set at 10~90° and scanned at 1.2° per minute. The Cu X-ray source set to operate at 40 kV and 40 mA in the continuous mode. The peaks in the diffraction pattern of each sample were analyzed using the software Diffrac (version 2.1). Then, the peaks were compared and matched with those of standard materials in the corresponding Powder Diffraction File (PDF-2, JCPDS International Center for Diffraction Data). A powder samples of the materials were analyzed using XRD and the peaks in diffraction pattern were compared to the Powder Diffraction File data. Results: Eight CSMs showed a similar diffraction pattern because their main component was calcium silicate. Eight CSMs showed similar diffraction peaks because calcium silicate was their main component. Two components were observed to have been added as radiopacifiers: bismuth oxide was detected in WMTA, OM, and EM while zirconium oxide was detected in RM, EN-Z, BD, EZ, and OM3. Unusual patterns were detected for the new material, OM3, which had strong peaks at low angles. Conclusion: It was caused by the presence of Brushite, which is believed to have resulted in crystal growth in a particular direction for a specific purpose.

전자회절실험에 의한 알루미늄 합금 (Al-Cu-Mg)의 미세 S-상 석출입자에 대한 결정구조 연구 (A Study of the Crystal Structure of the Fine S-Phase Precipitate in Al-Cu-Mg Alloy by Electron Diffraction Experiments)

  • 김황수
    • Applied Microscopy
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    • 제35권4호
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    • pp.1-9
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    • 2005
  • 이 논문에서 Al-Cu-Mg 합금의 미세 석출 입자의 S-상 ($Al_2CuMg$) 결정구조에 대해 전자회절실험에 의한 포괄적인 연구 결과가 보고 되어 있다. 이 실험에는 한 S-상 입자를 포함하는 최소 영역의 일정 zone축의 회절패턴(SAED) 관찰과 이에 대응되는 운동학적 이론을 기초로 한 패턴의 시물레이션과의 비교 분석, 그리고 관측된 회절 패턴 필름으로부터 각 Bragg회절 점의 강도의 정량적 데이터 추출과 운동학적 및 동역학적 회절 강도 계산과의 비교 검토의 과정을 포함하고 있다. 이러한 연구의 한 결과 S-상의 결정구조는 일찍이 X-ray 방법으로부터 얻은 PW 모델결정(Perlitz and Westgren, 1943)과 일치함을 보여주고 있고, HREM 방법에 의해 새로이 구한 RaVel (Radmilovic et al., 1999) 모델과는 전혀 맞지않음이 판명되었다.

RHEED에 의한 GaN, InN 핵생성층의 열처리 효과 분석 (Characterization of GaN and InN Nucleation Layers by Reflection High Energy Electron Diffraction)

  • 나현석
    • 열처리공학회지
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    • 제29권3호
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    • pp.124-131
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    • 2016
  • GaN and InN epilayers with nucleation layer (LT-buffer) were grown on (0001) sapphire substrates by radio-frequency plasma-assisted molecular beam epitaxy (RF-MBE). As-grown and annealed GaN and InN nucleation layers grown at various growth condition were observed by reflection high-energy electron diffraction (RHEED). When temperature of effusion cell for III source was very low, diffraction pattern with cubic symmetry was observed and zincblende nucleation layer was flattened easily by annealing. As cell temperature increased, LT-GaN and LT-InN showed typical diffraction pattern from wurtzite structure, and FWHM of (10-12) plane decreased remarkably which means much improved crystalline quality. Diffraction pattern was changed to be from streaky to spotty when plasma power was raised from 160 to 220 W because higher plasma power makes more nitrogen adatoms on the surface and suppressed surface mobility of III species. Therefore, though wurtzite nucleation layer was a little hard to be flattened compared to zincblende, higher cell temperature led to easier movement of III surface adatoms and resulted in better crystalline quality of GaN and InN epilayers.