• Title/Summary/Keyword: Diffraction pattern

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Crystal Structure Analysis by Texture Electron Diffraction Pattern (Texture Electron Diffraction Pattern에 의한 결정구조 해석)

  • Lee, Su-Jeong;Jou, Hyeong-Tae;Kim, Youn-Joong;Moon, Hi-Soo
    • Applied Microscopy
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    • v.32 no.3
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    • pp.185-193
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    • 2002
  • The works of texture electron diffraction patterns for crystal structure analysis are written in Russian or introduced briefly in books written in English, which makes it difficult to be understood. In addition to working out the equations, vector theory corrects some errors included in the established formulas for texture electron diffraction patterns.

Fabrication of Diffraction Grating Mold Using Dot Pattern (도트 패턴을 이용한 회절 격자 금형 제작)

  • Noh, Ji-Whan;Lee, Jae-Hoon;Sohn, Hyon-Kee;Suh, Jeong;Shin, Dong-Sig;Joung, Young-Un
    • Laser Solutions
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    • v.9 no.3
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    • pp.1-5
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    • 2006
  • Diffraction grating is the optical device which has periodic pattern. Decorative logotypes is the one of application of diffraction grating. In this paper diffraction grating for decorative logotype is fabricated by dot pattern in stead of line pattern. A metallic mold for diffraction gratings is fabricated with a mode-locked 12 ps Nd:YVO4 laser. Laser pulses with a wavelength of 355nm are irradiated on the surface of NOK 80, a mold material, to generate dot patterns. In order to minimize the dot diameter, laser power is set just above the ablation threshold of NOK 80. Results show that the spectrum from the fabricated mold is good enough for some industrial application

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Fabrication of diffraction grating mold using dot pattern (도트 패턴을 이용한 회절 격자 금형 제작)

  • Noh, Ji-Whan;Lee, Jae-Hoon;Sohn, Hyon-Kee;Suh, Jeong;Shin, Dong-Sig;Joung, Youn-Gun
    • Proceedings of the Korean Society of Laser Processing Conference
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    • 2006.11a
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    • pp.114-117
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    • 2006
  • Diffraction grating is the optical device which has periodic pattern. Decorative logotypes is the one of application of diffraction grating. In this paper diffraction grating for decorative logotype is fabricated by dot pattern in stead of line pattern. A metallic mold for diffraction gratings is fabricated with a mode-locked 12 ps $Nd:YVO_4$ laser. Laser pulses with a wavelength of 355nm are irradiated on the surface of NOK 80, a mold material, to generate dot patterns. In order to minimize the dot diameter, laser power is set just above the ablation threshold of NOK 80. Results show that the spectrum from the fabricated mold is good enough for some industrial application.

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Characterization of Microscale Objects based on the Diffraction Pattern Analysis (회절무늬를 이용한 미세물체의 특성 측정)

  • 강기호;전형욱;손정영;오명환
    • Korean Journal of Optics and Photonics
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    • v.2 no.1
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    • pp.1-6
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    • 1991
  • This paper describes the theoretical analysis of a diffraction pattern analyzer for the characterization of microscale object fields and a method for obtaining size and size distribution from the measured diffraction pattern of the object fields. For the experimental verification, a typical optical Fourier transform system was set up and calibrated with 2 5$\mu \textrm m$ and 50$\mu \textrm m$ pinholes. The system responses to distilled water droplets, alcohol, glycerin and silicon oil were imaged with vidicon, and the image was processed to determine the size distribution of each liquid particle field. The energy distribution function which is defined as the total intensity of a circular ring in the diffraction pattern was used to determine the dominant particle size of each liquid particle field.

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Fabrication and analysis of optical micro-pyramid array-patterns (광학 마이크로 피라미드 패턴의 제조 및 광특성 해석)

  • Lee, Je-Ryung;Jeon, Eun-Chae;Je, Tae-Jin;Woo, SangWon;Choi, Do-Sun;Yoo, Yeong-Eun;Kim, Hwi
    • Journal of the Korean Society of Manufacturing Process Engineers
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    • v.13 no.4
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    • pp.7-12
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    • 2014
  • A transparent poly methyl methacrylate (PMMA) optical micro-pyramid array-pattern is designed and fabricated using an injection modeling technique. The device's optical characteristics are tested and analyzed theoretically. In the optical pattern generated using the fabricated PMMA pattern, the components, due to not only refraction but also diffraction, are observed simultaneously. Wave optic modeling and analysis reveals that the energy ratio between the diffraction and refraction in the optical pattern are dependent on the critical dimension of the optical pattern such that the refraction and diffraction tend to be directly and inversely proportional to the pattern dimension, respectively.

Fully Phase-based Optical Encryption System Using Computer Holography and Fresnel Diffraction (컴퓨터 홀로그래피와 프레넬 회절을 이용한 위상 영상 광 암호화 시스템)

  • 윤경효;신창목;조규보;김수중;김철수;서동환
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.41 no.11
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    • pp.43-51
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    • 2004
  • In this paper, we propose a high-level optical encryption system, which is tolerant with noises and cropping, by encrypting the phase-encoded CGH pattern of original image with the phase-encoded Fresnel diffraction pattern of random key images. For encryption, the phase-encoded CGH pattern of original image is multiplied by conjugate components which are the phase-encoded Fresnel diffraction patterns of random key images. The original information can be reconstructed by multiplying encrypted image by phase-encoded Fresnel diffraction pattern of random key images and performing Fourier transform of the multiplication result. The proposed system is robust to noises and cropping due to characteristics of CGH pattern and can guarantee high-level encryption by using Fresnel diffraction information. We verified the validity of proposed system by computer simulations, numerical analysis of noises and cropping effect and optical experiment.

X-Ray Diffraction Analysis of Various Calcium Silicate-Based Materials

  • An, So-Youn;Lee, Myung-Jin;Shim, Youn-Soo
    • Journal of dental hygiene science
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    • v.22 no.3
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    • pp.191-198
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    • 2022
  • Background: The purpose of this study was to evaluate the composition of the crystal phases of various calcium silicate-based materials (CSMs): ProRoot white MTA (mineral trioxide aggregate) (WMTA), Ortho MTA (OM), Endocem MTA (EM), Retro MTA (RM), Endocem Zr (EN-Z), BiodentineTM (BD), EZ-sealTM (EZ), and OrthoMTA III (OM3). Methods: In a sample holder, 5 g of the powder sample was placed and the top surface of the material was packed flat using a sterilized glass slide. The prepared slides were mounted on an X-ray diffraction (XRD) instrument (D8 Advance; Bruker AXS GmbH, Germany). The X-ray beam 2θ angle range was set at 10~90° and scanned at 1.2° per minute. The Cu X-ray source set to operate at 40 kV and 40 mA in the continuous mode. The peaks in the diffraction pattern of each sample were analyzed using the software Diffrac (version 2.1). Then, the peaks were compared and matched with those of standard materials in the corresponding Powder Diffraction File (PDF-2, JCPDS International Center for Diffraction Data). A powder samples of the materials were analyzed using XRD and the peaks in diffraction pattern were compared to the Powder Diffraction File data. Results: Eight CSMs showed a similar diffraction pattern because their main component was calcium silicate. Eight CSMs showed similar diffraction peaks because calcium silicate was their main component. Two components were observed to have been added as radiopacifiers: bismuth oxide was detected in WMTA, OM, and EM while zirconium oxide was detected in RM, EN-Z, BD, EZ, and OM3. Unusual patterns were detected for the new material, OM3, which had strong peaks at low angles. Conclusion: It was caused by the presence of Brushite, which is believed to have resulted in crystal growth in a particular direction for a specific purpose.

A Study of the Crystal Structure of the Fine S-Phase Precipitate in Al-Cu-Mg Alloy by Electron Diffraction Experiments (전자회절실험에 의한 알루미늄 합금 (Al-Cu-Mg)의 미세 S-상 석출입자에 대한 결정구조 연구)

  • Kim, Hwang-Su
    • Applied Microscopy
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    • v.35 no.4
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    • pp.1-9
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    • 2005
  • In this paper it is reported that a comprehensive study of the crystal structure of the fine size S-phase ($Al_2CuMg$) precipitate in Al-Cu-Mg alloy by electron diffraction experiments. The experiments involve taking the selected area diffraction pattern for a S-phase particle, simulations of the pattern based on the kinematical diffraction theory and quantitative data collection from the zone axis diffraction patterns for the comparison with calculated diffraction intensity using both the kinematical and the dynamical diffraction theory. As a result, a good fitting model of the S-phase structure turns out to be the model reported early by X-ray methods (Perlitz & Westgren, 1943), not the new model determined by HRTEM methods (Radmilovic et al., 1999).

Characterization of GaN and InN Nucleation Layers by Reflection High Energy Electron Diffraction (RHEED에 의한 GaN, InN 핵생성층의 열처리 효과 분석)

  • Na, Hyunseok
    • Journal of the Korean Society for Heat Treatment
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    • v.29 no.3
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    • pp.124-131
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    • 2016
  • GaN and InN epilayers with nucleation layer (LT-buffer) were grown on (0001) sapphire substrates by radio-frequency plasma-assisted molecular beam epitaxy (RF-MBE). As-grown and annealed GaN and InN nucleation layers grown at various growth condition were observed by reflection high-energy electron diffraction (RHEED). When temperature of effusion cell for III source was very low, diffraction pattern with cubic symmetry was observed and zincblende nucleation layer was flattened easily by annealing. As cell temperature increased, LT-GaN and LT-InN showed typical diffraction pattern from wurtzite structure, and FWHM of (10-12) plane decreased remarkably which means much improved crystalline quality. Diffraction pattern was changed to be from streaky to spotty when plasma power was raised from 160 to 220 W because higher plasma power makes more nitrogen adatoms on the surface and suppressed surface mobility of III species. Therefore, though wurtzite nucleation layer was a little hard to be flattened compared to zincblende, higher cell temperature led to easier movement of III surface adatoms and resulted in better crystalline quality of GaN and InN epilayers.