• 한국환경보건학회지
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• 제24권2호
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• pp.145-150
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• 1998

This study was carried out to investigate the loss amount of collection at the different of precipitatation time, high voltage and gas speed. This work has focused on the dependence of the collection efficiency in the collector zone with gas speed and high voltage. This advanced Model is developed by research of the different parameter as the conventionnal modem of study. In order to investigate collection efficiency of electrostatic precipitator, the loss amount of knocking was measured with Monitek-Treubung and the particle size was analyzed by He-Ne laser diffraction spectroscopy.

• 과학교육연구지
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• 제34권2호
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• pp.203-210
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• 2010

본 연구에서는 은염 물질인 Slavich PFG-01을 사용하여 투과형 홀로그래피 회절격자를 제작하고, 고효율의 회절격자 제작을 위한 현상액의 조성 등과 같은 화학적 처리 과정의 조건들을 파악하고, 반전표백과 무정착 은염 재생성 표백에 의한 회절격자의 회절 효율 특성에 대해 알아보았다. 현상액 AAC를 사용하여 반전표백에서 89.0%과 무정착 은염 재생성 표백에서 82.1%의 최대회절효율을 얻었으며, 무정착 은염 재생성 표백의 경우는 반전표백에 비해 높은 노출에너지가 필요함을 알 수 있었다. 기존의 홀로그래피 기록물질인 Agfa 8E75HD나 BB-640로 보고된 회절효율에 비해 더 높은 회절효율 얻을 수 있었으며, 기록물질 특성 차이로 인해 더 높은 노출에너지가 필요함을 알 수 있었다. 한 가지 현상 주약으로 이루어진 현상액에 비해 두가지 현상 주약을 혼합한 경우 더 높은 회절효율을 얻을 수 있었으며, 대체로 반전표백에 비해 무정착 은염 재생성 표백에서 높은 회절효율을 나타내었다.

• 한국전기전자재료학회논문지
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• 제20권3호
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• pp.240-244
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• 2007

We investigated the diffraction grating efficiency by the Diode Pumped Solid State(DPSS 532 nm) laser beam wavelength to improve the diffraction efficiency on $As_{40}Ge_{10}Se_{15}S_{35},\;Ag/As_{40}Ge_{10}Se_{15}S_{35}$ and $As_{40}Ge_{10}Se_{15}S_{35}/Ag/As_{40}Ge_{10}Se_{15}S_{35}$ thin film. Diffraction efficiency was obtained from DPSS laser, used (P:P)polarized laser beam on each thin films. As a result, for the laser beam intensity in $0.24mW/cm^2$, single $As_{40}Ge_{10}Se_{15}S_{35}$ thin film shows the highest value of 0.161% diffraction efficiency at 300 s and for laser beam intensity in $2.4mW/cm^2$, it was recorded with the fastest speed of 50 s(0.013%), which the diffraction grating forming speed is faster than that of $0.24mW/cm^2$ beam. $Ag/As_{40}Ge_{10}Se_{15}S_{35}$ double layer and $As_{40}Ge_{10}Se_{15}S_{35}/Ag/As_{40}Ge_{10}Se_{15}S_{35}$ multi-layered thin film also show the faster grating forming speed at $2.4mW/cm^2$ and higher value of diffraction efficiency at $0.24mW/cm^2$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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• pp.1042-1045
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• 2002

We have carried out two-beam interference experiments to form holographic gratings on amorphous $MgF_2$/As-Ge-Se-S multi-layer. In this study, holographic gratings have been formed using He-Ne laser(632.8nm). under different polarization combinations. The diffraction efficiency was obtained by +1st order intensity. The maximum diffraction efficiency of As-Ge-Se-S single layer and $MgF_2$/As-Ge-Se-S multi-layer were 0.8% and 1.4%

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2002년도 International Meeting on Information Display
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• pp.293-296
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• 2002

Surface relief holograms are fabricated by means of irradiation of laser interference patterns. The diffraction efficiency and the surface relief depth depend on the writing energy and the polarization of the writing laser beam. This structure is very stable at temperatures under glass transition temperature $T_g$ and can be erased by heating above $T_g$. We proposed a new technique to control the surface relief structure. The electric charge was deposited on the surface relief grating in a corona-depositing poling setup in an oven. The first-order diffraction efficiency measured before and after corona discharge increased from about 0.24 % to about 28 %. This diffraction efficiency increase is mainly caused by the increase of the relief depth caused by the electric charge. The relief depth is increased from 20 nm to 350 nm by corona charging. .

• Bulletin of the Korean Chemical Society
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• 제23권4호
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• pp.571-574
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• 2002

The photorefractive polymeric composite with good performance was prepared. The carbazole-substituted polysiloxane sensitized by 2,4,7-trinitro-9-fluorenone was used as a photoconducting medium and 1-[4-(2-nitrovinyl)phenyl]piperidine was added as an optically nonlinear chromophore. The photorefractive property of polymer was determined by diffraction efficiency using a 100 ㎛-thick film. The maximum diffraction efficiency ( ηmax) of 71% was obtained at the electric field of 70 V/ ㎛. The potential of the current polymer material as a holographic recording medium was evaluated by the demonstration of holographic recording and subsequent reading of optical image.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.299-302
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• 2000

In this study, we have made the large holographic surface relief gratings on amorphous chalcogenide $As_{40}$$Ge_{10}$$Se_{15}$$S_{35}$ films by two beam interference using a He-Ne laser(632.8nm) light. The film thickness was about 0.6$\mu\textrm{m}$, we could magnify beam size by using beam expander. We made use $90^{\circ}$ holder which was made of reflection mirror and sample. Formed the surface relief structures were investigated using optical microscope. The diffraction efficiency was obtained by measuring +lst order intensity. In addition we investigated grating formation and diffraction efficiency as a function of polarization states which is linear or circular polarization. The results indicate that the grating was formed by linear polarized beam is better clear than that by circular polarized beam.

• 한국광학회지
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• 제12권5호
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• pp.418-424
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• 2001

수차가 적고 넓은 시야각에 걸쳐 높은 회절효율을 보이는 홀로그래픽 HMD 소자를 설계, 제작하였다. 적은 수차를 갖는 홀로그래픽 광학소자를 설계하기 위하여 recursive 설계 방법이 사용되었다. 적은 수차뿐만 아니라 넓은 FOV에 걸쳐 높은 회절효율을 갖도록 하기 위해 매개 홀로그램을 사용하였으며, 이를 이용해 수차가 보정된 홀로그램의 격자 함수를 최종적인 홀로그램에 전송하였다. 제작된 최종의 HMD용 홀로그래픽 광학소자의 수차는 보정 전보다 10배 가량 향상되었으며 FOV는 $\pm$$10^{\circ}$를 나타내었다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2008년도 제39회 하계학술대회
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• pp.1440-1441
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• 2008

In this paper, we investigated the diffraction grating efficiency on AsSeS and Ag-doped amorphous chalcogenide Ag/AsSeS thin film for used to volume hologram. The Chalcogenide film thickness was 0.5um and Ag thin film was varied from 10nm and 20nm. Diffraction efficiency was obtained from (P:P) polarized Diode Pumped Solid State laser(DPSS, 532.0nm: 200mW) beam on AsSeS and Ag/AsSeS thin films. As a results, diffraction grating was not formed at AsSeS thin film but at Ag-doped AsSeS thin film, diffraction grating was formed well compare with the former.

• 전자공학회논문지A
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• 제33A권3호
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• pp.152-162
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• 1996

Diffraction gratings were designed to generate multiple beams for the real-time optical interconnection in free-space using a liquid crsytal television. Multi-level phase gratings consisted of stepped phase value, 0 to 2$\pi$, and generate a 5$\times$5 spot array, and V-shaped spot patterns which have a maximum diffraction efficiency of 78.84%. Simulated annealing technique was used to determine phase states of each pixel having uniform intensity and high diffraction efficiency. Through the optical interconnection experiments, we compared the diffraction characteristics of beam paterns obtained by binary-level, four-level, and eight-level phase gratings.