• Title/Summary/Keyword: Diffraction and scattering

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Electromagnetic Wave Propagation Characteristics from Large Scale Random Rough Surfaces (큰 규모의 불규칙 조면에 의한 전자파 전파 특성)

  • Yoon Kwang-Yeol;Chai Yong-Yoong
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.17 no.4 s.107
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    • pp.393-399
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    • 2006
  • In this paper we applied a ray tracing method to estimate the scattering characteristics from large scale random rough surfaces. For the electromagnetic field evaluation, we have used the diffracted coefficient of the knife edge diffraction for the diffracted rays and Fresnel's reflection coefficients in connection with reflected rays. In addition, we examine to search for the traced rays using the imaging method which can be obtained all rays to arrived at receivers accurately and the diffracted field from rough surfaces is considered. Numerical examples have been carried out for the scattering characteristics of an ocean wave-like rough surface and delay spread characteristics of a building-like surface. In the present work we have demonstrated that the ray tracing method is effective to numerical analysis of a rough surface scattering.

Real-time X-ray Scattering as a Nanostructure Probe for Organic Photovoltaic Thin Films

  • Lee, Hyeon-Hwi;Kim, Hyo-Jeong;Kim, Jang-Ju
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.181-181
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    • 2013
  • Recently, nanostructure and the molecular orientation of organic thin films have been largely paid attention due to its importance in organic electronics such as organic thin film transistors (OTFTs), organic light emitting diodes (OLEDs), and organic photovoltaics (OPVs). Among various methods, the diffraction and scattering techniques based on synchrotron x-rays have shown powerful results in organic thin film systems. In this work, we introduce the in-situ annealing system installed at PLS-II (Pohang Light Source II) for organic thin films by simultaneously conducting various x-ray scattering measurements of x-ray reflectivity, conventional x-ray scattering, grazing incidence wide angle x-ray scattering (GI-WAXS) and so on. Using the in-situ measurement, we could obtain real time variation of nanostructure as well as molecular orientation during thermal annealing in metal-phthalocyanine thin films. The variation of surface and interface also could be simultaneously investigated by the x-ray reflectivity measurement.

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User-Body Shadowing Analysis Technique in Ship Environment Based on the Uniform Geometrical Theory of Diffraction (균일 회절 이론을 이용한 선박 환경에서의 단말기 사용자 쉐도잉 분석 기법)

  • Kim, Chang-Hoe;Jung, Jae-Hoon;Lee, Seong Ro;Kim, Seong-Cheol
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.39C no.11
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    • pp.1209-1215
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    • 2014
  • The Uniform Geometrical Theory of Diffraction(UTD) is an effective technique to analyze the radio wave by ray-based calculation of the diffraction coefficient and the reflection coefficient. In this paper, user body shadowing based on the UTD is investigated when the user is close to the mobile device. Two cases are introduced. One is that the user is calling with the mobile attached to the ear(Head Model). The other is that the mobile is located about 15cm away from the user's chest(Chest Model) Radiation Model and Scattering Model are applied to these cases presenting which model is applicable.

Electromagnetic scattering characteristics of a hyperbolic reflector antenna accounting for the UTD higher order diffraction (UTD 고차회절을 고려한 쌍곡면 반사판 아테나의 전자파 산란 특성)

  • 최재훈;이병우;이상설
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.33A no.5
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    • pp.85-93
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    • 1996
  • The far-zone scattered field patterns of a hyperbolic reflector antenna are analyzed by using uniform geometrical theory of diffraction(UTD). The main objective of this paper is to obtain the higher order diffraction contributions which provide the continuity over the shadow boundaries of the first order solution. to obtain the scattered magnetic field characteristics, the scattered field components of the secodn-order diffraction, diffraction-reflection, diffraction-reflection-diffraction terms are added to the result of the previous research. The results of the present research are compared to those of the first order solution and the method of moments. One can observe the improvemtn of the current approach over the first order solution. also, the results of the present method agree very well with those of the moment methods especially in the transition regions near the first order diffraction shadow boundaries.

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Point-diffraction interferometer for 3-D profile measurement of light scattering rough surfaces (광산란 거친표면의 고정밀 삼차원 형상 측정을 위한 점회절 간섭계)

  • 김병창;이호재;김승우
    • Korean Journal of Optics and Photonics
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    • v.14 no.5
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    • pp.504-508
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    • 2003
  • We present a new point-diffraction interferometer, which has been devised for the three-dimensional profile measurement of light scattering rough surfaces. The interferometer system has multiple sources of two-point-diffraction and a CCD camera composed of an array of two-dimensional photodetectors. Each diffraction source is an independent two-point-diffraction interferometer made of a pair of single-mode optical fibers, which are housed in a ceramic ferrule to emit two spherical wave fronts by means of diffraction at their free ends. The two spherical wave fronts then interfere with each other and subsequently generate a unique fringe pattern on the test surface. A He-Ne source provides coherent light to the two fibers through a 2${\times}$l optical coupler, and one of the fibers is elongated by use of a piezoelectric tube to produce phase shifting. The xyz coordinates of the target surface are determined by fitting the measured phase data into a global model of multilateration. Measurement has been performed for the warpage inspection of chip scale packages (CSPs) that are tape-mounted on ball grid arrays (BGAs) and backside profile of a silicon wafer in the middle of integrated-circuit fabrication process. When a diagonal profile is measured across the wafer, the maximum discrepancy turns out to be 5.6 ${\mu}{\textrm}{m}$ with a standard deviation of 1.5 ${\mu}{\textrm}{m}$.

A Proposal for Optical Diagnostics Through the Enhancement of Diffraction Patterns Using Thin-film Interference Filters

  • Stefanita Carmen Gabriela;Shao Yun Feng
    • Biotechnology and Bioprocess Engineering:BBE
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    • v.9 no.6
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    • pp.428-434
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    • 2004
  • Coarse clumping of solid materials within diseased biological cells can have a marked influence on the light scattering pattern. Perturbations in refractive index lead to distinct varia­tions in the cytometric signature, especially apparent over wide scattering angles. The large dynamic range of scattering intensities restricts collection of data to narrow angular intervals be­lieved to have the highest potential for medical diagnosis. We propose the use of an interfer­ence filter to reduce the dynamic range. Selective attenuation of scattering intensity levels is expected to allow simultaneous data collection over a wide angular interval. The calculated angu­lar transmittance of a commercial shortwave-pass filter of cut-off wavelength 580 nm indicates significant attenuation of scattering peaks below ${\~}\;10^{circ}$, and reasonable peak equalization at higher angles. For the three-dimensional calculation of laser light scattered by cells we use a spectral method code that models cells as spatially varying dielectrics, stationary in time. How­ever, we perform preliminary experimental testing with the interference filter on polystyrene microspheres instead of biological cells. A microfluidic toolkit is used for the manipulation of the microspheres. The paper intends to illustrate the principle of a light scattering detection system incorporating an interference filter for selective attenuation of scattering peaks.

Development of radar cross section analysis system of naval ships

  • Kim, Kook-Hyun;Kim, Jin-Hyeong;Choi, Tae-Muk;Cho, Dae-Seung
    • International Journal of Naval Architecture and Ocean Engineering
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    • v.4 no.1
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    • pp.20-32
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    • 2012
  • A software system for a complex object scattering analysis, named SYSCOS, has been developed for a systematic radar cross section (RCS) analysis and reduction design. The system is based on the high frequency analysis methods of physical optics, geometrical optics, and physical theory of diffraction, which are suitable for RCS analysis of electromagnetically large and complex targets as like naval ships. In addition, a direct scattering center analysis function has been included, which gives relatively simple and intuitive way to discriminate problem areas in design stage when comparing with conventional image-based approaches. In this paper, the theoretical background and the organization of the SYSCOS system are presented. To verify its accuracy and to demonstrate its applicability, numerical analyses for a square plate, a sphere and a cylinder, a weapon system and a virtual naval ship have been carried out, of which results have been compared with analytic solutions and those obtained by the other existing software.

Physical Characteristics of 3C-SiC Thin-films Grown on Si(100) Wafer (Si(100) 기판 위에 성장돈 3C-SiC 박막의 물리적 특성)

  • ;;Shigehiro Nishino
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.15 no.11
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    • pp.953-957
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    • 2002
  • Single crystal 3C-SiC (cubic silicon carbide) thin-films were deposited on Si(100) wafer up to the thickness of 4.3 ${\mu}{\textrm}{m}$ by APCVD (atmospheric pressure chemical vapor deposition) method using HMDS (hexamethyildisilane; {CH$_{3}$$_{6}$ Si$_{2}$) at 135$0^{\circ}C$. The HMDS flow rate was 0.5 sccm and the carrier gas flow rate was 2.5 slm. The HMDS flow rate was important to get a mirror-like crystal surface. The growth rate of the 3C-SiC film was 4.3 ${\mu}{\textrm}{m}$/hr. The 3C-SiC epitaxial film grown on Si(100) wafer was characterized by XRD (X-ray diffraction), AFM (atomic force microscopy), RHEED (reflection high energy electron diffraction), XPS (X-ray photoelecron spectroscopy), and Raman scattering, respectively. Two distinct phonon modes of TO (transverse optical) near 796 $cm^{-1}$ / and LO (longitudinal optical) near 974$\pm$1 $cm^{-1}$ / of 3C-SiC were observed by Raman scattering measurement. The heteroepitaxially grown film was identified as the single crystal 3C-SiC phase by XRD spectra (2$\theta$=41.5。).).

Characterization of 3C-SiC grown on Si(100) water (Si(100) 기판상에 성장된 3C-SiC의 특성)

  • Na, Kyung-Il;Chung, Yun-Sik;Ryu, Ji-Goo;Chung, Gwiy-Sang
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.11b
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    • pp.533-536
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    • 2001
  • Single crystal cubic silicon carbide(3C-SiC) thin film were deposited on Si(100) substrate up to a thickness of $4.3{\mu}m$ by APCVD(atmospheric pressure chemical vapor deposition) method using hexamethyildisilane(HMDS) at $1350^{\circ}C$. The HMDS flow rate was 0.5 sccm and the carrier gas flow rate was 2.5 slm. The HMDS flow rate was important to get a mirror-like. The growth rate of the 3C-SiC films was $4.3{\mu}m/hr$. The 3C-SiC epitaxical layers on Si(100) were characterized by XRD(X-ray diffraction), raman scattering and RHEED(reflection high-energy electron diffraction), respectively. The 3C-SiC distinct phonons of TO(transverse optical) near $796cm^{-1}$ and LO(longitudinal optical) near $974{\pm}1cm^{-1}$ were recorded by raman scattering measurement. The deposition films were identified as the single crystal 3C-SiC phase by XRD spectra($2{\theta}=41.5^{\circ}$). Also, with increase of films thickness, RHEED patterns gradually changed from a spot pattern to a streak pattern.

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