• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.1355-1356
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• 2007

SMD type 압전레조네이터 제작을 위한 압전 조성물을 찾고자 PLT 세라믹스에 B-site Ti 자리에 Mn을 치환시키고 소결첨가제로서 CuO를 첨가하였다. $0{\sim}0.4wt%$ CuO를 첨가하여 1150, 1200, $1250^{\circ}C$로 각각 소결한 후 소결온도 및 CuO 첨가량에 따른 압전 및 유전특성을 관찰하였다. CuO 첨가량에 따라 1150, $1200^{\circ}C$ 소결시 밀도가 증가하였고, $1250^{\circ}C$ 소결시 기계적 품질계수가 증가하였다. 소결온도 $1250^{\circ}C$, 0.1wt% CuO 첨가시 밀도, 전기기계 결합계수(kp), 유전상수, 기계적 품질계수는 7.5[g/cm3], 0.1, 253, 1776을 각각 나타내었다.

• 한국초전도학회:학술대회논문집
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• v.15
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• pp.56-56
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• 2005

• Progress in Superconductivity and Cryogenics
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• v.21 no.3
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• pp.22-26
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• 2019

With an increasing potential to realize quantum computer, it has recently been an important issue to extend the capabilities of RF cavities to maintain longer coherent quantum system. Using superconductors instead of normal metals allows the quantum system to have a substantially enhanced quality factor. In this paper, surface impedances of superconducting cavities are calculated by the Mattis-Bardeen theory with Python & MATLAB programs. With a simulation of electromagnetic field distribution, the sensitivity to dielectric and surface losses of the superconducting cavities are determined. Then calculations of the resonance frequency and quality factor of three-dimensional superconducting resonators made of Al or Nb are discussed.

• The Journal of The Korea Institute of Intelligent Transport Systems
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• v.3 no.1 s.4
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• pp.13-19
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• 2004

The VCO(Voltage Controlled Oscillator) with low phase noise and high reliability is implemented using nonlinear design, and its phase noise characteristics are compared with that of Lesson's equation. The microstripline coupled with dielectric resonator is realized as a high impedance inverter to improve the phase noise, and the qualify factor of resonator circuit can be transferred to active device with the enhanced the loaded quality factor. The worst case and part stress analyses are achieved to obtain the high reliability of VCO. The developed VCO has the oscillating tuning factor of 0.56MHz/V for the control voltage range of 0$\~$12V This VCO requires the DC power of 160mW. The phase noise characteristics exhibit good performances of -96.51dBc/Hz @ 10KHz and -116.3dBc/Hz @ 100KHz, respectively. And, the output power of 7.33 dBm is measured.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.17 no.11
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• pp.2512-2520
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• 2013

In this paper, the T-SRR (Triple Split Ring Resonator) using MNG (mu-Negative) meta-material adapted in a low-loss bandpass filter with 3-stages is suggested. The size of the T-SRR in the proposed bandpass filter with low dielectric constant PCB can be easily controlled. And the ${\lambda}/4$ transmission line theory is applied. The proposed T-SRR and filter have the center frequency of 10 GHz with QL value of 184 for military-satellite communication system in I band. The experimental results of the filter show that the insertion and return losses are 1.44 dB and 17.3 dB with bandwidth of 10 %, respectively. The proposed filter will be redesigned by IPD material etc. should be placed here. These instructions give you guidelines for preparing papers for JICCE.

• The Journal of The Korea Institute of Intelligent Transport Systems
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• v.4 no.2 s.7
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• pp.81-87
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• 2005

In this paper, a VCDRO(Voltage Control Dielectirc Resonator Oscillator) for signal source of doppler radar system is designed and fabricated. The proposed VCDRO is made with new tuning mechanism using CPW line. The coplanar waveguide of $\lambda_{g}$/2 in length with varactor diode is placed on the metallization side under the dielectric resonator and coupled to it. Tuning varactor diode is mounted at one end of the CPW. The proposed circuit tuned by a CPW allows one more varactor diode to be mounted on the optimized CPW, where a greater sensitivity of frequency tuning is needed. With varying the biasing voltage for the varactor diode from 0 V to 15 V, output frequency tuning of 12 MHz is obtained. The PLDRO exhibits output power of 16.5 dBm with phase noise in the phase locked state characteristic of -115 dBc/Hz at 100 Hz, -105 dBc/Hz at the 10 kHz, and -102 dBc/Hz at 1 Hz offset from 10.525 GHz , respectively.

• Journal of Navigation and Port Research
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• v.30 no.10 s.116
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• pp.847-853
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• 2006

In this paper, we designed VCO(voltage controlled oscillator} that is composed of a dielectric resonator and a varactor diode, and the PLDRO(phase locked dielectric resonator oscillator) that is combined with the sampling phase detector and loop filter. The results at 12.05 GHz show the output power is 13.54 dBm frequency tuning range approximately +/- 7.5 MHz, and power variation over the tuning range less than 0.2 dB, respectively. The phase noise which effects on bits error rate in digital communication is obtained with -114.5 dBc/Hz at 100 kHz offset from carrier, and The second harmonic suppression is less than -41.49 dBc. These measured results are found to be more improved than those of VCO without adopting PLL, and the phase noise and power variation performance characteristics show the better performances than those of conventional PLL.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.21 no.2
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• pp.194-201
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• 2010

We propose a frequency selective surface(FSS) using double split ring resonators(DSRRs) for isolation enhancement between CDMA and RFID. The structure consists of an outer SRR and an inner SRR, and the gaps are formed in the same direction. By properly adjusting the gap and line width, the resonant frequency and skirt characteristics can be adjusted without varying the unit cell size. The proposed structure has a different field distribution from that of an ordinary SRR for magneto-dielectric materials. One layer consists of $9{\times}9$ unit cells and the other layer was separated by 50 mm. To validate the simulation results, we fabricated the patch antenna and the FSSs, and the measured results show a good agreement with the simulated ones. The electrical size of the unit cell is $0.110\;{\lambda}{\times}0.110\;{\lambda}{\times}0.002\;{\lambda}$, and the size of the two layer FSS is $1.058\;{\lambda}{\times}1.058\;{\lambda}{\times}0.153\;{\lambda}$. The two layer FSS maintain gain in CDMA frequency and has 6.9 dB reduced gain in RFID frequency.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.41 no.10
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• pp.109-117
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• 2004

In this paper, a K-band local oscillator composed of a VCDRO(Voltage Controlled Dielectric Resonator Oscillator), GaAs MESFET, and Reflector type frequency doubler has been designed and fabricated. TO obtain a good phase noise performance of a VCDRO, a active device was selected with a low noise figure and a low flicker noise MESFET and a dielectric resonator was used for selecting stable and high oscillation frequency. Especially, to have a higher conversion gain than a conventional doubler as well as a good harmonic suppression performance with circuit size reduced a doubler structure was employed as the Reflector type composed of a reflector and a open stub of quarter wave length for rejecting the unwanted harmonics. The measured results of fabricated oscillator show that the output power was 5.8 dBm at center frequency 12.05 GHz and harmonic suppression -37.98 dBc, Phase noise -114 dBc at 100 KHz offset frequency, respectively, and measured results show of fabricated frequency doubler, the output power at 5.8 dBm of input power is 1.755 dBm conversion gain 1.482 dB, harmonic suppression -33.09 dBc, phase noise -98.23 dBc at 100 KHz offset frequency, respectively. This oscillator could be available to a local oscillator in K-band which used frequency doubler techniques.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.13 no.7
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• pp.613-624
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• 2002

Electrical characteristics of two types of 20 GHz Push-Push GaAs MESFET dielectric resonator oscillators having Wilkinson and T-junction power combiners for the output stage have been investigated and compared. So we have explained that the output power and phase noise properties of the Push-push FET DRO are depending on return loss and isolation characteristics of power combiner at the fundamental and the second harmonic frequencies. A Push-push oscillator for suppressing the fundamental frequency of 10 GHz and enhancing the second harmonic of 20 GHz has been designed and fabricated in microstrip configuration on 20 mil thick RT-Duroid($\varepsilon$$_{r}$ = 2.52) Teflon substrate. Return loss and isolation characteristics of T-junction and Wilkinson have been measured at the fundamental frequency of 10.2 GHz and the second harmonic frequency of 20.5 GHz. At the fundamental frequency, -12 dB return loss and -3.7 dB isolation have been measured for the T-junction power combiner, and -14 dB return loss and -11 dB isolation fur the Wilkinson power combiner. At the second harmonic frequency, -10 dB return loss and -7.5 dB isolation have been obtained for the T-junction power combiner, and -23 dB return loss and -22 dB isolation for the Wilkinson power combiner. As a result, we have confirmed that the oscillator based on the Wilkinson power combiner with better retrun loss and isolation characteristics produces more output power and better phase noise characteristics..