• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.160-161
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• 2005

The $(Sr_{1-x}Ca_x)TiO_3$(SCT) thin films are deposited on Pt-coated electrode (Pt/TiN/$SiO_2$/Si) using RF sputtering method with substitutional contents of Ca. The optimum conditions of RF power and $Ar/O_2$ ratio were 140[W] and 80/20, respectively. Deposition rate of SCT thin film was about 18.75$[{\AA}/min]$. The dielectric constant was increased with increasing the substitutional contents of Ca, while it was decreased if the substitutional contents of Ca exceeded over 15[mol%]. All SCT thin films used in this study show the phenomena of dielectric relaxation with the increase of frequency, and the relaxation frequency is observed above 200[kHz].

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.50 no.10
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• pp.504-508
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• 2001

The$(Sr_{1-x}Ca_x)TiO_3$(SCT) thin films are deposited on Pt-coated electrode $(Pt-TiN /SiO_2Si)$ using RF sputtering method at various deposition temperature. The crystallinity of thin films was increased with increased of deposition temperature n the temperature range of 200~500 $[^{\circ}C]$. The capacitance changes almost linearly in temperature ranges of -80~+90$[^{\circ}C]$. All SCT thin films used in the study the phenomena of dielectric relaxation with the increase of frequency, and the relaxation frequency is observed above 200[kHz]. V-I characteristics of SCT thin films show the increasing leakage current with the increases of deposition temperature.

• Proceedings of the KIEE Conference
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• 1988.11a
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• pp.186-188
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• 1988

Relaxation spectra of the linear dielectric constants $\varepsilon=\varepsilon'-j{\varepsilon}"$ have been measured as functions of temperature and frequency for alternating copolymers of vinylidene cyanide (VDCN/VAc, VDCN/VPr, VDCN/VBz and VDCN/St) It is found that the linear dielectric constants e show characteristics of the temperature dependence that the real part have a large peak related to the glass transition point(Tg), and of the frequency dependence that the real port increases with decreasing frequency and the imaginary part increases largely in low frequency range. These phenomena mean Debye-type relaxation due to the micro-Brownian moi ions of non-crystalline seqments.

• Journal of the Korean Ceramic Society
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• v.38 no.10
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• pp.953-957
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• 2001

To study various relaxation phenomena of $Pb(Mg_{1/3}Nb_{2/3})O_3$ relaxor ferroelectrics, weak electric-field properties as well as strong electric-field properties were investigated in the frequency range from 1 Hz to 100 kHz. The temperature dependence of the dielectric properties were measured under the low electric-field of 1 V/mm in the phase transition temperature range from $-40^{\circ}C$ to $90^{\circ}C$. The dielectric properties obtained from the slope of the dielectric hysteresis loop and the temperature dependence of the pyroelectric properties were also investigated. When fitting all the experimental data with the Vogel-Fulcher relation, experimental data were agreed with the equation closely. Thus, dielectric relaxations could be modeled by the Vogel-Fulcher relation not only for the low electric-field but also for the high electric-field.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.10
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• pp.802-807
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• 2001

The (S $r_{0.85}$C $a_{0.15}$)Ti $O_{3}$(SCT) thin films are deposited on Pt-coated electrode (Pt/TiN/ $SiO_2$/Si) using RF sputtering method. The composition of SCT thin films deposited on Si substrate at woom temperature is close to stoichiometry(1.102 in A/B ratio). The maximum dielectric constant of SCT thin films is obtained by annealing at 600[$^{\circ}C$]. The capacitance characteristics had a stable value within $\pm$4[%]. The drastic decrease of dielectric constant and increase of dielectric loss in SCT thin films is observed above 200[kHz]. SCT thin films used in this study show the phenomena of dielectric relaxation with the increase of frequencey.cey.

• Electrical & Electronic Materials
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• v.7 no.3
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• pp.187-199
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• 1994

In order to find an effect of structural changes due to variation of addition ratio of anhydride hardener and postcuring herat-treatments upon electrical properties of epoxy composites, the dielectric properties over a frequency range from 30[Hz] to l[MHz] were investigated in the temperature range of 20-180[.deg. C]. From the dielectric properties, the a peaks related with glass-transition phenomena of epoxy network appeared near 130[.deg. C], the conduction loss in high temperature region above 150[.deg. C] due to thermal dissociation of hardener started off with the low frequency side and the .betha. peak concerned with contribution of movable unreacted terminal epoxy groups and curing agents in the glass states concurred with the high-frequency side below 20[.deg. C]. And an effect of an hydride hardener upon structural changes and of postcuring heat treatments upon structural stability in epoxy composites would be explained through the estimation of the distribution of relaxation times and the activation energy for a .alpha. peak according to the WLF equations.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.10
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• pp.1786-1790
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• 2007

The $(SrCa)TiO_3(SCT)$ thin films are deposited on Pt-coated electrode ($Pt/TiN/SiO_2/Si$) using RF sputtering method at various deposition temperature. The dielectric constant of SCT thin films were increased with the increase of deposition temperature, and changed almost linearly in temperature ranges of $-80{\sim}+90[^{\circ}C]$. Also, SCT thin films was observed the phenomena of dielectric relaxation with the increase of frequency, and the relaxation frequency was observed above 200[kHz]. V-I characteristics of SCT thin films show the increasing leakage current with the increases of deposition temperature. The conduction mechanism of the SCT thin films observed in the temperature range of $25{\sim}100[^{\circ}C]$ can be divided into three characteristic regions with different mechanism by the increasing current. The region 1 below 0.8[MV/cm] shows the ohmic conduction. The region 2 can be explained by the Child's law, and the region 3 is dominated by the tunneling effect.

• Proceedings of the KIEE Conference
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• 2006.10a
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• pp.12-13
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• 2006

The physical properties of DMPC monolayer were made for dielectric relaxation phenomena by the detection of the surface pressures and displacements current. The current was measured after the electric bias across the manufactured MIM device. It is found that the phospolipid monolayer of dielectric relaxation takes a little time and depend on the molecular area. When electric bias is applied across the manufactured MIM device by the deposition condition of phospolipid mono-layer, it wasn't breakdown when the higher electric field to impress by increase of deposition layers.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.10
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• pp.436-440
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• 2003

The (S $r_{0.85}$C $a_{0.15}$)Ti $O_3$(SCT) thin films were deposited on Pt-coated electrode(Pt/TiN/ $SiO_2$/Si) using RF sputtering method according to the deposition condition. The optimum conditions of RF power and Ar/ $O_2$ ratio were 140[W] and 80/20, respectively. Deposition rate of SCT thin films was about 18.75[$\AA$/min] at the optimum condition. The composition of SCT thin films deposited on Si substrate is close to stoichiometry (1.102 in A/B ratio). The capacitance characteristics had a stable value within $\pm$4[%]. The drastic decrease of dielectric constant and increase of dielectric loss in SCT thin films were observed above 200[kHz]. SCT thin films used in this study showed the phenomena of dielectric relaxation with the increase of frequency.ncy.

• Electrical & Electronic Materials
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• v.1 no.1
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• pp.54-61
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• 1988

This paper was a study on dielectric phenomena of the specimen, Polypropylene films which were annealled in air and quenched in liquid nitrogen after aging for 5[hr] in water of 100[.deg.C]. The specimen was measured in temperature range of 15-120[.deg.C] and in frequency range of 30-1x 10$^{6}$ [HZ]. As the results of the study, it was confirmed that the tacticity of specimen was isotactic structure, and the degree of cryatallinity of the specimens calculated by means of Natta's method from XRD (X-ray Diffraction) spectrum was 55[%]. And for dielectric relaxation, .betha. peak-the tan .delta. (spectrum around 20[.deg.C])-attributed due to amorphous regions, and .alpha. peak - the tan .delta. spectrum around 90[.deg.C]-due to crystalline regions. It was identified that the degree of crystallinity of the specimen quenched in the liquid nitrogen was increased to 55-65[%], and that of the specimen annealled in the air was decreased to 55-50[%]. And activation energy from dielectric loss spectra was obtained 34.5[kcal/mole] for .alpha. peak and 80.5[kcal/mole] for .betha. peak, respectively.