• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1992.05a
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• pp.125-129
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• 1992

When relaxation time will be distributed, TSC observed in the experimental procedure was analysed by using a potential model having two equilibrium positions and equations of dielectric properties was derived. Calculation of distribution was made by matrix method and compared/confirmed values obtained by TSC and alternating current which have a correspondence with each other. In this measurement, distribution of activation energy and relaxation time was determined by TSC peak at around 147k/364 of which center is 10$\^$-4/ sec/10$\^$5/ sec respectively at room temperature and also obtained dielctric loss factor at the range of 10$\^$-7/-10$\^$5/Hz. It seems that low temperature peak is local dispersion and high temperature peak have a relation to dielectric transition of the material.

• Journal of Ceramic Processing Research
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• v.13 no.spc2
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• pp.163-165
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• 2012

Impedance spectroscopy informs electrical properties of materials as accumulated charges, contact status between electrode and organic materials. We carried out impedance spectroscopy of organic light-emitting diodes as ITO/Alq3(60 nm)/Al on temperatures from 10 K to 300 K. The result described Z'-Z" plot, cole-cole plot and dielectric relaxation time τ. Z'-Z" plot means that real and imaginary part of materials in organic and electrode by frequencies and temperature. Z' as real part of impedance by applied frequency depending on temperature shows the plateau in low frequency region as Rs+ Rp and over 100 kHz in high frequency region as Rs. Cole-cole plot shows resistance of materials in equivalent circuit of the device by temperatures. And equivalent circuit and dielectric relaxation could be accomplished by using the complex impedance analysis.

• Journal of Electrical Engineering and Technology
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• v.6 no.3
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• pp.391-396
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• 2011

The tracking pattern formed on the dielectric surface due to a surface electrical discharge exhibits fractal structure. In order to quantitatively investigate the fractal characteristics of the surface tracking pattern, the dielectric breakdown model has been employed to numerically generate the surface tracking pattern. In dielectric breakdown model, the pattern growth is determined stochastically by a probability function depending on the local electric potential difference. For the computation of the electric potential for all points of the lattice, a two-dimensional discrete Laplace equation is solved by mean of the successive over-relaxation method combined to the Gauss-Seidel method. The box counting method has been used to calculate the fractal dimensions of the simulated patterns with various exponent $\eta$ and breakdown voltage $\phi_b$. As a result of the simulation, it is found that the fractal nature of the surface tracking pattern depends strongly on $\eta$ and $\phi_b$.

• Polymer(Korea)
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• v.26 no.6
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• pp.728-736
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• 2002

The thermal and dielectric properties of unsaturated polyester resin system during cure were analyzed under Isothermal conditions. Both $varepsilon$′ and $varepsilon$" decreased and dipole relaxation was observed under isothermal conditions during cure. The ionic conductivity decreased linearly with the conversion according to the Kienle-Rate equation (ln($varepsilon$"$_{ionic}$we$_{0}$)=C$_{r}$$alpha$+C$_{0}$) up to $alpha$=0.15, after which it aparted from the relationship due to the entanglement of polymer chains. The effect of ionic conductivity was revealed to be larger than that of dipole motion during the whole cure through the electrical modulus analysis. Although dielectric motion was analyzed with Debye model, it was observed only at a narrow time region of middle stage of cure. In order to estimate the dielectric properties during the whole cure, the Havriliak-Negami model was considered and modified with the strong effect of ionic conductivity. The changes of $varepsilon$′ and $varepsilon$" were well estimated with this modified Havriliak-Negami model.

• Journal of the Korean Ceramic Society
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• v.38 no.10
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• pp.953-957
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• 2001

To study various relaxation phenomena of $Pb(Mg_{1/3}Nb_{2/3})O_3$ relaxor ferroelectrics, weak electric-field properties as well as strong electric-field properties were investigated in the frequency range from 1 Hz to 100 kHz. The temperature dependence of the dielectric properties were measured under the low electric-field of 1 V/mm in the phase transition temperature range from $-40^{\circ}C$ to $90^{\circ}C$. The dielectric properties obtained from the slope of the dielectric hysteresis loop and the temperature dependence of the pyroelectric properties were also investigated. When fitting all the experimental data with the Vogel-Fulcher relation, experimental data were agreed with the equation closely. Thus, dielectric relaxations could be modeled by the Vogel-Fulcher relation not only for the low electric-field but also for the high electric-field.

• Journal of the Korean Electrochemical Society
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• v.22 no.2
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• pp.53-59
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• 2019

To examine the solution structure of electrolytes, it is very important to understand ion-ion and ion-solvent interactions. In this review, we introduce the basic principle of dielectric relaxation spectroscopy (DRS) and studies of electrolyte structure. DRS is a type of impedance method, which measures the dielectric properties of electrolytes over a high frequency domain at levels of tens of GHz. Therefore, DRS provides information on the different polar chemical species present in the electrolyte, including the type and concentration of free solvents and ion pairs with dipole moments. The information of DRS is complementary to the information of conventional analytical techniques (Infrared/Raman spectroscopy, nuclear magnetic resonance (NMR), etc.) and thus enables a broad understanding of electrolyte structure.

• Electrical & Electronic Materials
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• v.11 no.10
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• pp.1-5
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• 1998

Complex dynamic relaxation processes of mechanical as well as dielectric character in polymeric anelastic solids are closely related through the movement of molecular chain segment in morphological structure, and the morphology can easily be modified by the treatments such as mechanical drawing or irradiation, those of which result, in turn, the complicated change on the appearance of the observed complex relaxation peak. In order to extract any meaningful understanding from the modified appearance of the peak, the relaxation peak must be resolved into the sum of the dynamic single relaxation peaks, each of which can be characterized respectively by three factors such as activation energy, magnitude of peak height and peak point temperature on the temperature dependent characteristics.

• Journal of the Korean institute of surface engineering
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• v.56 no.4
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• pp.227-232
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• 2023

In this study, complex admittance as a function of temperature and frequency was measured to analyze the important relaxation properties of lead scandium niobate, which is physically important, although it is not an environmentally friendly electrical and electronic material, including lead. Lead scandium niobate was synthesized by heat treating the solid oxide, and the conductance, susceptance and capacitance were measured as a function of temperature and frequency from the temperature dependence of the RLC circuit. The relaxation characteristics of lead scandium niobate were found to be affected by contributions such as grain size, grain boundary characteristics, space charge, and dipole arrangement. As the temperature rises, the maximum admittance and susceptance increase in one direction, but the resonance frequency decreases below the transition temperature but increases after the phase transition.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.54 no.9
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• pp.397-402
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• 2005

The ($Sr_{1-x}Ca_x)TiO_3(SCT)$ thin films are deposited on Pt-coated electrode (Pt/TiN/SiO$_{2}$Si) using RF sputtering method with substitutional contents of Ca. The optimum conditions of RF power and Ar/O$_{2}$ ratio were 140(W) and 80/20, respectively. Deposition rate of SCT thin film was about $18.75{\AA}$/min. The dielectric constant was increased with increasing the substitutional contents of Ca, while it was decreased if the substitutional contents of Ca exceeded over $15[mol\%]$. The capacitance characteristics had a stable value within $\pm4[\%]$ in temperature ranges of $-80\~+90[^{\circ}C]$. All SCT thin films used in this study show the phenomena of dielectric relaxation with the increase of frequency, and the relaxation frequency is observed above 200[kHz].

• Electrical & Electronic Materials
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• v.8 no.5
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• pp.611-618
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• 1995

The (Sr$_{1-x}$ .Ca$_{x}$)TiO$_{3}$+0.6[mol%]Nb$_{2}$O$_{5}$ (0.05.leq.x.leq.0.2) ceramics were fabricated to form semiconducting ceramics by sintering at about 1350[.deg. C] in a reducing atmosphere(N$_{2}$ gas). Metal oxides, CuO, was painted on the both surface of the specimens to diffuse to the grain boundary. They were annealed at 1100 [.deg. C] for 2 hours. The 2nd phase formed by thermal diffusing from the surface lead to a very high apparent dielectric constant. According to increase of the frequency as a functional of temperature, all specimens used in this study showed the dielectric relaxation, and the relaxation frequency was above 106 [Hz], it move to low frequency with increasing resistivity of grain. The specimens showed three kinds of conduction mechanisms in the temperature range 25-125 [.deg. C] as the current increased: the region I below 200 [V/cm] shows the ohmic conduction. The region rt between 200 [V/cm] and 2000 [V/cm] can be explained by the Poole-Frenkel emission theory, and the region III above 2000 [V/cm] is dominated by the tunneling effect.fect.