• 대한전기학회논문지:전기기기및에너지변환시스템부문B
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• 제50권7호
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• pp.331-337
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• 2001

With the increasing reliability of analysis schemes and the dramatically increased calculating speed, the computer simulation has become and indispensable process to predict the interruption capacity of circuit breakers. Generally, circuit breakers have to possess both the small current and large current interruption abilities and the circuit breaker designers need to evaluate its capacities to save the time and the expense. The analysis of small current and the large current interruption performances have been considered separately because the phenomena occurring in a interrupter are quite different. To analyze the dielectric recovery after large current interruption many physical phenomena such as heat transfer, convection and arc radiation, the nozzle ablation, the ionization of high temperature SF(sub)6 gas, the electric and themagnetic forces and so forth mush be considered. However, in the analysis of small current interruption performance only the cold gas flow analysis needs to be carried out because the capacitive current is to small that the influence from the current can be neglected. In this paper, an empirical equation which is obtained from a series of tests to estimate the dielectric recovery strength has been applied to a real circuit breaker. The results of analysis have been compared with the test results and the reliability has been investigated.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제54권9호
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• pp.397-402
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• 2005

The ($Sr_{1-x}Ca_x)TiO_3(SCT)$ thin films are deposited on Pt-coated electrode (Pt/TiN/SiO$_{2}$Si) using RF sputtering method with substitutional contents of Ca. The optimum conditions of RF power and Ar/O$_{2}$ ratio were 140(W) and 80/20, respectively. Deposition rate of SCT thin film was about $18.75{\AA}$/min. The dielectric constant was increased with increasing the substitutional contents of Ca, while it was decreased if the substitutional contents of Ca exceeded over $15[mol\%]$. The capacitance characteristics had a stable value within $\pm4[\%]$ in temperature ranges of $-80\~+90[^{\circ}C]$. All SCT thin films used in this study show the phenomena of dielectric relaxation with the increase of frequency, and the relaxation frequency is observed above 200[kHz].

• 대한전기학회:학술대회논문집
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• 대한전기학회 2011년도 제42회 하계학술대회
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• pp.1562-1563
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• 2011

Partial discharge measurement is one of the effective diagnostic techniques to predict abnormal high voltage dielectric insulation conditions of the electric equipments. Recently partial discharge diagnostic techniques were also utilized to evaluate the cryogenic dielectric insulation of high temperature superconducting electric equipment in liquid nitrogen. Generally, liquid nitrogen at 77 K is used used as the cryogenic and dielectric media for many high temperature superconducting high voltage applications. When a quench in the superconductor occurs, bubbles are generated which can affect the dielectric properties of the liquid nitrogen. So in order to reduce the bubble formation, subcooled nitrogen was also employed for this purpose. In this work, investigation of partial discharge characteristics of subcooled liquid nitrogen were conducted in order to clarify the retardation of partial discharge initiation voltage according to the different subcooling temperature of liquid nitrogen. And also the relation of partial discharge phenomena and the activities of bubbles were analyzed. It was observed that PD inception voltages shows rather different characteristics according to the decrease of subcooling temperature and the activities of bubbles were strongly influenced by temperature of the subcooled liquid nitrogen.

• 전자공학회논문지 IE
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• 제49권1호
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• pp.7-11
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• 2012

본 논문에서는 인지질 단분자인 DMPC 유기초박막에 압력 자극을 이용하여 표면압과 변위전류의 검출에 따른 유전 완화현상에 대한 물리적 특성 평가를 하였다. 유기초박막에서 약간의 유전 완화 시간이 소요되었는데 이는 분자 영역에 의존한다는 사실을 알 수 있었다. 또한, 유기박막의 누적 조건에 의해 제작된 MIM 소자에 전압을 인가시, LB막의 누적층수가 증가 할수록 저항이 증가한다는 것을 알 수 있었는데 이는 유기초박막의 층수가 증가하여 전극간의 거리가 멀어질수록 더 높은 전계에서도 파괴되지 않는 절연특성이 나타남을 알 수 있었으며 나노단위의 유기초박막의 비교적 양호한 절연성을 확인, 제시 하였다.

• Journal of Electrical Engineering and Technology
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• 제6권3호
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• pp.397-401
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• 2011

The response of lightning impulse voltage was explored in dielectric liquids employing hydrodynamic modeling with three charge carriers using the finite element method. To understand the physical behavior of discharge phenomena in dielectric liquids, the response of step voltage has been extensively studied recently using numerical techniques. That of lightning impulse voltage, however, has rarely been investigated in technical literature. Therefore, in this paper, we tested impulse response with a tip-sphere electrode which is explained in IEC standard #60897 in detail. Electric field-dependent molecular ionization is a common term for the breakdown process, so two ionization factors were tested and compared for selecting a suitable coefficient with the lightning impulse voltage. To stabilize our numerical setup, the artificial diffusion technique was adopted, and finer mesh segmentation was generated along with the axial axis. We found that the velocity from the numerical result agrees with that from the experimental result on lightning impulse breakdown testing in the literature.

• E2M - 전기 전자와 첨단 소재
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• 제9권4호
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• pp.364-371
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• 1996

In this study, in order to investigate the applicability of IPN structure to epoxy resin which has been widely used as electrical and electronic insulating materials, DC dielectric breakdown properties and morphology were compared and analyzed according to variation of network structure, using the single network structure specimen formed of epoxy resin alone, interpenetrating polymer network specimen formed of epoxy resin/methacrylic acid resin, and interpenetrating polymer network specimen formed of epoxy resin/methacrylic acid resin/polyurethane resin. As results of the measunnent of DC dielectric breakdown strength at 50[.deg. C] and 130[>$^{\circ}C$], IPN specimen formed of epoxn, resin 100[phr] and methacrylic acid resin 35[phr] was the most excellent, and which corresponded to the SEM phenomena. The effect of IPN was more remarkable at high temperature region than at low temperature region. It is supposed that the defect of epoxy resin, dielectric breakdown strength is lowered remarkably at high temperature region, be complemented according to introducing IPN method.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 춘계학술대회 논문집
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• pp.37-41
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• 2004

In this paper, evaluation of physical properties about dielectric relaxation phenomena by the detection of the surface pressures and displacements current on the monolayer films of phospolipid monomolecular DLPC, DMPC using pressure stimulus. As a result, the changed surface pressure, displacement current and the transition forms of dipole moment of phospolipid monomolecular in area per molecular by pressure stimulus were conformed well. It was known that the monolayers by linear relationship for decision of dielectric relaxation time between compressure speed and molecule area By according to the linear relationship relation get that frictional constant, DLPC was $1.89{\times}10^{-19}$ [Js] and DMPC was $0.722{\times}10^{-19}$[Js]. lt is found that the phospolipid monolayer of dielectric relaxation takes a little time and depend on the molecular area.

• 전기학회논문지
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• 제60권11호
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• pp.2097-2102
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• 2011

Discharge analysis technique for dielectric liquid was presented by using the Finite Element Analysis (FEA) under a lightning impulse incorporating two-phase flow phenomena which described gas and liquid phases in discharge space. Until now, the response of step voltage has been extensively explored, but that of lightning impulse voltage was rarely viewed in the literature. We, therefore, developed an analyzing technique for dielectric liquid in a tip-sphere electrode stressed by a high electric field. To capture the bubble phase, the Heaviside function was introduced mathematically and the material functions for the ionization, dissociation, recombination, and attachment were defined in liquid and bubble, respectively. By using this numerical setup, the molecular dissociation and ionization mechanisms were tested under low and high electric fields resulted from the lightning impulse voltage of 1.2/50 ${\mu}s$. To verify our numerical results, the velocity of electric field wave was measured and compared to the previous experimental results which can be viewed in many papers. Those results had good agreement with each other.

• E2M - 전기 전자와 첨단 소재
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• 제7권3호
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• pp.187-199
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• 1994

In order to find an effect of structural changes due to variation of addition ratio of anhydride hardener and postcuring herat-treatments upon electrical properties of epoxy composites, the dielectric properties over a frequency range from 30[Hz] to l[MHz] were investigated in the temperature range of 20-180[.deg. C]. From the dielectric properties, the a peaks related with glass-transition phenomena of epoxy network appeared near 130[.deg. C], the conduction loss in high temperature region above 150[.deg. C] due to thermal dissociation of hardener started off with the low frequency side and the .betha. peak concerned with contribution of movable unreacted terminal epoxy groups and curing agents in the glass states concurred with the high-frequency side below 20[.deg. C]. And an effect of an hydride hardener upon structural changes and of postcuring heat treatments upon structural stability in epoxy composites would be explained through the estimation of the distribution of relaxation times and the activation energy for a .alpha. peak according to the WLF equations.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.160-161
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• 2005

The $(Sr_{1-x}Ca_x)TiO_3$(SCT) thin films are deposited on Pt-coated electrode (Pt/TiN/$SiO_2$/Si) using RF sputtering method with substitutional contents of Ca. The optimum conditions of RF power and $Ar/O_2$ ratio were 140[W] and 80/20, respectively. Deposition rate of SCT thin film was about 18.75$[{\AA}/min]$. The dielectric constant was increased with increasing the substitutional contents of Ca, while it was decreased if the substitutional contents of Ca exceeded over 15[mol%]. All SCT thin films used in this study show the phenomena of dielectric relaxation with the increase of frequency, and the relaxation frequency is observed above 200[kHz].