• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.1084-1087
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• 2001

The (Sr$\sub$0.85/Ca$\sub$0.15/)TiO$_3$(SCT) thin films are deposited on Pt-coated electrode(Pt/TiN/SiO$_2$/Si) using RF sputtering method. The crystallinity of SCT thin films is increased with increase of substrate temperature in the temperature range of 100[$^{\circ}C$]∼500[$^{\circ}C$]. Also, the crystallinity of SCT thin films are obtained at the substrate temperature above 400[$^{\circ}C$]. SCT thin films had (111) preferred orientation. The dielectric constant changes almost linearly in temperature ranges of-80∼+90[$^{\circ}C$]. The temperature properties of the dielectric loss have a stable value within 0.1. SCT thin films used in this study show the phenomena of dielectric relaxation with the increase of frequency, and the relaxation frequency is observed above 200[kHz].

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.295-299
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• 1999

The (S $r_{1-x}$C $a_{x}$)Ti $O_3$(SCT) thin films are deposited on Pt-coated electrode(Pt/TiN/ $SiO_2$/ Si) using RF sputtering method with substitutional contents of Ca. The maximum grain of thin films is obtained by substitution of Ca at 15[mol%]. The dielectric constant was increased with increasing the substitutional contents of Ca, while it was decreased if the substitutional contents of Ca exceeded over 15[mo1%]. The dielectric constant changes almost linearly in temperature ranges of -80~ +90[$^{\circ}C$]. The temperature properties of the dielectric loss have a stable value within 0.02 independent of the substitutional contents of Ca. All SCT thin films used in this study show the phenomena of dielectric relaxation with the increase of frequency, and the relaxation frequency is observed above 200(kHz).)..

• Transactions on Electrical and Electronic Materials
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• v.10 no.3
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• pp.80-84
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• 2009

The microstructure, voltage-current, capacitance-voltage, and dielectric characteristics of CCT doped Zn/Pr-based varistors were investigated at different sintering temperatures. As the sintering temperature increased, the average grain size increased from 4.3 to 5.1 ${\mu}m$ and the sintered density was saturated at 5.81 g $cm^{-3}$. As the sintering temperature increased, the breakdown field decreased from 7,532 to 5,882 V $cm^{-1}$ and the nonlinear coefficient decreased from 46 to 34. As the sintering temperature increased, the donor density, density of interface states, and barrier height decreased in the range of (9.06-7.24)${\times}10^{17}\;cm^{-3}$, (3.05-2.56)${\times}10^{12}\;cm^{-2}$, and 1.1-0.95 eV, respectively. The dielectric constant exhibited relatively low value in the range of 529.1-610.3, whereas the $tan{\delta}$ exhibited a high value in the range of 0.0910-0.1053.

• Proceedings of the KIEE Conference
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• 2003.07c
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• pp.1583-1585
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• 2003

Maxwell displacement current(MDC) measuring technique has been employed to study the dielectric property of Langmuir-films. A method for determining the dielectric relaxation time ${\tau}$ of floating monolayers on the water surface is presented. MDC flowing across monolayers is analyzed using a rod-like molecular model. It is revealed that the dielectric relaxation time ${\tau}$ of monolayers in the isotropic polar orientational phase is determined using a liner relationship between the monolayer compression speed ${\alpha}$ and the molecular area Am. Compression speed ${\alpha}$ was about 30, 40, 50mm/min.

• Journal of the Korean institute of surface engineering
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• v.28 no.4
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• pp.236-242
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• 1995

This paper describes a study of electrical tree growth in DGEBA/MDA/SN system subjected to ac high electric field. The dielectric breakdown process, which consists of tree initiation, tree propagation and the complete puncture of the system was investigated. Dielectric breakdown always initiated from the needle tip where the electric field reinforcement is the highest. Higher temperature and voltage accelerated the tree growth and reduced the time to breakdown.

• Journal of the Korea Safety Management & Science
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• v.3 no.4
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• pp.45-52
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• 2001

In order to Investigate water tree degradation behavior on XLPE cable, direct voltage of 200 to 800V has been applied to the material at 5$0^{\circ}C$~10$0^{\circ}C$, and the water tree property has been correlated with voltage and temperature. The leakage current was increase as temperature increased and the Ohm's law was generally satisfied in this experiment though some experimental errors were found. The leakage current was decreased and reached to the stable state with time. It was also shown that the time for the stabilization of leakage current was lessened as voltage increased

• 전기의세계
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• v.16 no.4
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• pp.11-16
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• 1967

A physical analysis is applied to the measured phenomena of aromatic organic compounds under the uniform electric field of 0.1MV/cm through 1.5MV/cm, when they are irradiated or non-irradiated respectively. Upon the observations about irradiation effects, space charge effects and their temperature dependance, the conditions of lattice defects act conspicuously on electric conductrivity, photo conductivity and dielectric breakdown. Although the qualitative agreement with Frohlich's high energy criterion theory for the above mechanisms is poor, it is concluded that the phenomena of aromatic compounds may possibly be due to the effect of lattice defects or impurity centers generated by .gamma.-ray irradiations.

• Journal of the Korean Society for Precision Engineering
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• v.26 no.3
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• pp.122-128
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• 2009

DBD(Dielectric Barrier Discharges) plasma is often used to clean the surface of semiconductor. The cleaning performance is affected mainly by plasma density and duration time. In this study, the plasma density is predicted by coupled simulation of flow, chemistry mixing and reaction, plasma, and electric field. 13.56 MHz of RF source is used to generate plasma. The effect of dielectric thickness, gap distance, and flow velocity on plasma density is investigated. It is shown that the plasma density increases as the dielectric thickness decreases and the gap distance increases.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.10
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• pp.559-563
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• 2000

The $(Sr_{1-x}Ca_x)TiO_3(SCT)$ thin films are deposited on Pt-coated(Pt/TiN/$SiO_2$/Si) using RF sputtering method with substitutional contents of Ca. The maximum grain of thin films is obtained by substitution of Ca at 15[mol%]. Also the composition of SCT thin films were closed to stoichiometry(1.081∼1.117 in A/B/ ratio). The dielectric constant was increased with increasing the substitutional contents of Ca, while it was decreased if the substitutional contents of Ca exceeded over 15[mol%]. The dielectric constant changes almost linearly in temperature ranges of -80∼+90[^${\circ}C$]. The temperature properties of the dielectric loss have a stable value within 0.02 independent of the substitutional contents of Ca. All SCT thin films used in this study show the phenomena of dielectric relaxation with the increase of frequency, and the relaxation frequency is observed above 2000[kHz]. The current-voltage characteristics of SCT15 thin films showed the increasing leakage current as the measuring temperature increase.

• The Transactions of the Korean Institute of Electrical Engineers B
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• v.51 no.6
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• pp.273-284
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• 2002

In this paper, computer simulations of the physical Phenomena occurring in the arc region before and after current zero were carried out to evaluate the dielectric recovery characteristics of two types of double-flow nozzles. A commercial CFD Program "PHOENICS" is used for the simulation and the user-coded subroutines to consider the arcing phenomena were added to this program by the authors. The computed results were verified by the comparison with the test results presented by the research group of BBC. In order to investigate the state of the arc region after current zero, the simulation was carried out with four steps. They are cold gas flow analysis, steady state arc simulation, transient arc simulation before current zero, transient hot gas flow simulation after current zero. The semi-experimental arc radiation model is adapted to consider the radiation energy transport and Prandtl′s mixing length model is employed as the turbulence model. The electric field and the magnetic field were calculated with the same grid structure used for the simulation of the flow field. The streamer criterion was introduced to evaluate the dielectric recovery characteristics after current zero. Compared with the results obtained by assuming the current zero state in the former studies, it has been found that the results obtained by considering the state before current zerowere more accurate.