• JSTS:Journal of Semiconductor Technology and Science
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• v.10 no.2
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• pp.79-99
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• 2010

Pulsed current-voltage (I-V) methods are introduced to evaluate the impact of fast transient charge trapping on the performance of high-k dielectric transistors. Several pulsed I-V measurement configurations and measurement requirements are critically reviewed. Properly configured pulsed I-V measurements are shown to be capable of extracting such device characteristics as trap-free mobility, trap-induced threshold voltage shift (${\Delta}V_t$), as well as effective fast transient trap density. The results demonstrate that the pulsed I-V measurements are an essential technique for evaluating high-$\kappa$ gate dielectric devices.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.270-273
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• 2001

Electrical tree is studied widely by manufacture state of insulating material fare and blazing fire diagnosis system of use in phenomenon of part discharge that happen for main cause of dielectric breakdown of equipment for electric power. Use process that draw tree pattern here measuring above zero to study special quality of this electricity tree, real-time processing by image processing is proposed because reproduction of tree blazing fire process drops and pattern of tree is difficult correct quantification of tree growth by existent visual observation by involution. This research presents general process that need in image processing of tree blazing fire, and that remove various noises that happen in above zero by measuring electrical tree dividing background and complete view in measured above zero taking advantage of specially proposed complete view object abstraction techniques effectively and quantification of tree becomes easy naturally, can apply to dielectric breakdown estimate because can chase growth process of tree.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.11 no.6
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• pp.996-1005
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• 2000

This paper proposed a novel broadband ceramic dielectric antenna by improving the conventional broadband technique that very high permittivity material is attaching to one side of low permittivity material. The broadband ceramic dielectric antenna can be designed by using our proposed method, and it overcomes the disadvantage of narrow bandwidth problem. For the proposed ceramic dielectric antenna, a 10 dB return-loss bandwidth of 33.9% has been achieved. The measurement and numerical results(Finite Element Method) are performed and confirmed to a good agreement with each other. The proposed ceramic dielectric antenna is designed and implemented to extend enough the coverage of dual band (PCS+IMT-2000).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.12
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• pp.797-802
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• 2014

In this study, in order to develop the capacitor composition ceramics with the good dielectric properties, $(Ba_{1-x}Ca_x)(Ti_{0.85}Zr_{0.12}Sn_{0.03})O_3$ (abbreviated as BCTZ) ceramics were prepared by the conventional solid-state reaction method. The effects of Ca substitution on the microstructure and dielectric properties was investigated. The X-ray diffraction patterns demonstrated that all the specimens showed perovskite phase, and secondary phases are indicated in the measurement range of X-ray diffraction. Also, all the specimens indicated an rhombohedron phase structure. It was identified from the X-ray diffraction patterns that the secondary phase formed in grain boundaries and then decreased the dielectric properties. For all the specimens, observed one peak was tetragonal cubic phase transition temperature($T_c$), which is located in the vicinity of room temperature.

• Korean Journal of Materials Research
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• v.21 no.4
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• pp.236-241
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• 2011

Polysilazane and silazane-based precursor films were deposited on stacked TiN/Ti/TEOS/Si-substrate by spin-coating, then annealed at $150{\sim}400^{\circ}C$, integrated further to form the top electrode and pad, and finally characterized. The precursor solutions were composed of 20% perhydro-polysilazane ($SiH_2NH$)n, and 20% hydropolymethyl silazane ($SiHCH_3NH$)n in dibutyl ether. Annealing of the precursor films led to the compositional change of the two chemicals into silicon (di)oxides, which was confirmed by Fourier transform infrared spectroscopy (FTIR) spectra. It is thought that the different results that were obtained originated from the fact that the two precursors, despite having the same synthetic route and annealing conditions, had different chemical properties. Electrical measurement indicated that under 0.6MV/cm, a larger capacitance of $2.776{\times}10^{-11}$ F and a lower leakage current of 0.4 pA were obtained from the polysilazane-based dielectric films, as compared to $9.457{\times}10^{-12}$ F and 2.4 pA from the silazane-based film, thus producing a higher dielectric constant of 5.48 compared to 3.96. FTIR indicated that these superior electrical properties are directly correlated to the amount of Si-O bonds and the improved chemical bonding structures of the spin-on dielectric films, which were derived from a precursor without C. The chemical properties of the precursor films affected both the formation and the electrical properties of the spin-on dielectric film.

• Journal of the Korean Vacuum Society
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• v.18 no.1
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• pp.24-29
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• 2009

The SiOC film as inter layer insulator was researched the reason of the decreasing the dielectric constant by the ionic polarization and electronic polarization, respectively. The dielectric constant was measured using the conventional C-V measurement system, and the reflective index owing to the electronic polarization. Two kinds of dielectric constants were compared and then induced the origin of low-k materials. The chemical properties of the SiOC film were analyzed by the FTIR spectra, and the carbon content was obtained by the deconvoluted data of FTIR spectra. The variation of the carbon content tended to similar to the trend of reflective index, but was in inverse proportion to the dielectric constant. The effect of the electronic polarization did not affect the decreasing the dielectric constant, however the ionic polarization decreased effectively the dielectric constant of the SiOC film.

• Electrical & Electronic Materials
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• v.13 no.9
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• pp.13-17
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• 2000

• 한국초전도학회:학술대회논문집
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• v.15
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• pp.25-25
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• 2005

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.5
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• pp.329-337
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• 2001

It has been known that the leakage current in the low field region consists of the dielectric relaxation current and intrinsic leakage current, which cause the charge loss in dynamic random access memory (DRAM) storage capacitor using (Ba,Sr)TiO$_{3}$ (BST) thin film. Especially, the dielectric relaxation current should be seriously considered since its magnitude is much larger than that of the intrinsic leakage current in giga-bit DRAM operation voltage (~IY). In this study, thermally stimulated current (TSC) measurement was at first applied to investigate the activation energy of traps and relative evaluation of the density of traps according to process change. And, through comparing TSC to early methods of I-V or I-t measurement and analyzing, we identify the origin of the dielectric relaxation current and investigate the reliability of TSC measurement. First, the polarization condition such as electric field, time, temperature and heating rate was investigated for reliable TSC measurement. From the TSC measurement, the energy level of traps in the BST thin film has been investigated and evaluated to be 0.20($\pm$0.01) eV and 0.45($\pm$0.02) eV. Based on the TSC measurement results before and after rapid thermal annealing (RTA) process, oxygen vacancy is concluded to be the origin of the traps. TSC characteristics with thermal annealing in the MIM BST capacitor have shown the same trends with the current-voltage (I-V) and current-time (I-t) characteristics. This means that the TSC measurement is one of the effective methods to characterize the traps in the BST thin film.

• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.11
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• pp.9-19
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• 1990

A theoretical analysis and measurement technique to determine the complex permittivity and permeability of cylindrical and ring type dielectric resonators is given. The resonant frequency, unloaded quality factor and physical dimensions of dielectric resonator placed between two parallel conducting plates are used to evaluate the complex permittivity and permeability. This process is repeated for other higher-order modes to expand the evaluation at higher resonant frequencies. The nature of each mode is identified by measuring the variations of field strength along the azimuthal and longitudinal direction. An error analysis taking into account various error sources reveals that $TE_{0np}$ or quasi-TE modes yield the least amount of measurement error, which is less than $0.5{\%}$for the real part, $4{\%}$for the imaginary part of complex permittivity.