• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.10
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• pp.773-777
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• 1998

This paper presents the results of measured permittivity of PCB sheet material in the frequency range of 0.1 ~ 2[㎓] and temperature range of 25~ 85[>$^{\circ}C$]. Microstrip lines with different physical length are implemented to measure the attenuation and phase shift of the signals through these lines. The loss factor of glass-epoxy and teflon could by calculated with the measured dielectric constant and the attenuation. From the experiment, the glass-epoxy was more influenced by temperature and frequency than teflon. The average dielectric constants of glass-epoxy and teflon within the measured frequency range are 4.48 and 2.18, respectively.

• Applied Science and Convergence Technology
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• v.25 no.4
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• pp.77-80
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• 2016

The $PbSc_{1/2}Nb_{1/2}O_3$ ceramics at a relatively low temperature of $1300^{\circ}C$ was successful synthesized. Solid state reaction of two-step process is not necessary. The dielectric constant, dielectric loss and admittance of ceramic samples were determined. The pyroelectric characteristics are in good agreement with the dielectric properties. Ferroelectric properties of well-formed the $PbSc_{1/2}Nb_{1/2}O_3$ ceramics are in agreement with broad distribution of relaxation phenomenon. Relatively strong frequency dependent of dielectric constant is observed at about $110^{\circ}C$. The distinct thermal hysteresis was observed in the measurement of the dielectric constant and dielectric loss. The critical exponents of during cooling and heating measurements in the $PbSc_{1/2}Nb_{1/2}O_3$ ceramics were 1.14 and 1.59 at 1 kHz, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1992.05a
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• pp.129-132
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• 1992

Rutile was among the first dielectric materials used. However, rutile exhibits a very high temperature coefficient of capacitance (about -750[ppm/$^{\circ}C$]) which resticts its practical application. Since this first use of titania, other materials have also been studied with the object of decreasing the temperature dependence whilst retaining favorable dielectric loss, Q, and relative permittivity. The temperature coefficient of temperature compensation capacitor is +100~750[ppm/$^{\circ}C$], dielectric constant 10~150. Low loss ceramics with dielectric constants in the 10～150 range also found application. Recently, their applications are extended in EMI filter and dielectric materials for microwave. There temperature coefficient of dielectric materials approaches 0[ppm/$^{\circ}C$]. The dielectric preperties of zirconia titanate ceramics prepared by addition of $Ta_2O_{5}$ were investigated.

• Proceedings of the IEEK Conference
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• 1998.10a
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• pp.621-624
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• 1998

This paper presents a new configuration of dielectric bandpass filter using the comb-line filter design theory. This filter is composed of a homogeneous dielectric monoblock $(\varepsilonr=35.5)$ with two metal post and a dielectric sheet $(\varepsilonr=9.8).$ In this structure, the RF leakage is suppressed without other shield housing. For the fabricated filter, insertion loss value in the passband region was 0.9dB(Max.) and return loss value was 19dB(Min). Also, this filter has a attenuation pole in the stopband.

• Electrical & Electronic Materials
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• v.10 no.9
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• pp.960-967
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• 1997

• Journal of the Korean Ceramic Society
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• v.36 no.9
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• pp.915-922
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• 1999

Microwave dielectric properties and far infrared reflectivity spectra of the (Zr0.8Sn0.2)TiO4 ceramics were inves-tigated with the various cooling rate. Dielectric constant was nearly same value while the unloaded Q value was largely affected by cooling rate. The Q.f of 42,140 at 7 GHz was obtained for the specimens with cooling rate of 1$^{\circ}C$/min. The effect of the cooling rate on the change of the ionic the electronic polarization and the intrinsic microwave loss of the specimens were investigated by the infrared reflectivity spectra from 50 to 4000cm-1 which were calculated by Kramers-Kroning analysis and the classical oscillator model. The relative tendency of microwave dielectric properties of the specimens calculated from the relfectivity data were in good agreement with the results by the post resonant method.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.11
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• pp.810-815
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• 2013

In this study, the capacitance and dielectric loss tangent of the silicone rubber which is combined with filler (30 phr~50 phr) have been measured on the range of 100 Hz~100 kHz and $30{\sim}170^{\circ}C$. It was found that when the frequency is 0.1 kHz~100 kHz and the silicone rubber is combined with 30 phr to 50 phr of filler, the capacitance of silicone rubber has increased by about 28.6 pF to 33 pF in 30 phr of filler, about 20 pF to 46.1 pF in 40 phr of filler and about 36.4 pF to 44 pF in 50 phr of filler. It seems that the volume of dielectric loss has gradually increased due to the temperature rise and the rotating of dipole in electric field through the electric dipole generated by the Si-O group which is induced by adding of filler, or the carbonyl group which is caused by oxidation. It seems that the dielectric dispersion in 0.1 kHz is caused by molecular motion of Siloxane group in main chain, and the dielectric dispersion in 10 kHz is caused by molecular motion of Methyl group in side chain.

• Journal of the Korea Safety Management & Science
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• v.4 no.4
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• pp.137-146
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• 2002

In order to investigate the effect of irradiation by $^{60}Co-\gamma$rays as well as the e thermal treatment on the dielectric deterioration in ethylene propylene rubber, insulating material for electric cables used in atomic power plants, charging discharging current, residual built- up voltage and dielectric properties are measu discussed in this study. Variance in the characteristic of relative dielectric constant as a function of tem was observed in relatively high dose of irradiation. Since glass transition tem appeared at tens of degree Celsius below zero, the characteristic is attributed orientation polarization. Dielectric loss is generally increased, with increasing d irradiation in the characteristic of dielectric loss as a function of temperature, No d loss by thermal treatment was observed. Dielectric resistance decreases with increa of irradiation in the characteristic of charging current as a function of temperature be considered that dielectric resistance seems to be recovered by thermal treatm characteristic of discharging current as a function of time in the specimen less ir become similar to that of the unirradiated, when thermal treated. A peak is shown residual built- up voltage as a function of time, and the corresponding time of the shorten as increasing dose of irradiation. It is also observed that the corresponding the peak is lengthened by thermal treatment.

• Journal of electromagnetic engineering and science
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• v.6 no.1
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• pp.1-9
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• 2006

A sandwich structure of dielectric material and air gap inside a rectangular waveguide is proposed as a fast electrically tunable low-loss phase shifter. As the dielectric material is shifted up and down by piezoelectric actuator and, thereby, the thickness of air gap is changed, the effective dielectric constant of the sandwich structure is varied. Phase shifters based on the sandwich structure with different dielectric materials showed phase shift of $20{\sim}200^{\circ}/cm$ at X-band as the thickness of air gap varied up to $30{\mu}m$. The idea can be extended toward low-loss millimeter wave phase shifters since modem microwave ceramics have been developed to show very low dielectric loss$(tan\;{\delta}{\sim}10^{-4})$.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.1
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• pp.1-5
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• 2006

The effect of A/B moi ratios and sintering temperatures on dielectric properties and microstructure of $(Ba_{0.93}Ca_{0.07})_m(Ti_{0.82}Zr_{0.18})O_3$ ceramics were investigated. The dielectric constant decreased with increasing the A/B mol ratio. However, the dielectric loss is improved. As the dielectric properties of A/B mol ratio with m = 1.009 at sintered temperature $1260^{\circ}C$, we obtained dielectric constant 12,800, dielectric loss $3.5\%$ and Y5V temperature characteristics. Highly reliable Ni-MLCCs, 1.6mm$(length){\time}0.8mm(width){\time}0.8mm$(height) with capacitance of 1.23 ${\mu}F$ and 야ssipation loss of $5.2\%$ were obtained employing dielectric material composed of $(Ba_{0.93}Ca_{0.07})_{1.009}(Ti_{0.82}Zr_{0.18})O_3$ - $MnO_2\;0.2wt\%-Y_2O_3\;0.18wt\%,\;-\;SO_2\;0.15wt\%-(Ba_{0.4}Ca_{0.6})SiO_3\;1wt\%$.