• Title/Summary/Keyword: Dielectric heating

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Gate dielectric SiO2 film deposition on poly Silicon using UV-excited ozone gas without heating substrate.

  • Kameda, Naoto;Nishiguchi, Tetsuya;Morikawa, Yoshiki;Kekura, Mitsuru;Nonaka, Hidehiko;Ichimura, Shingo
    • 한국정보디스플레이학회:학술대회논문집
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    • 2007.08a
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    • pp.915-918
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    • 2007
  • We have grown $SiO_2$ film on a polycrystalline Si layer using excited ozone gas, which is produced by ultra-violet light irradiation to ozone gas, without heating substrate. The obtained $SiO_2$ film shows dielectric properties comparable to the device quality films measured at the MIS capacitor configuration.

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A study on a dielectric heating system for amplifying the resonant gain using the capacitance of electrodes (전극의 용량성분을 이용한 공진이득 증폭형 유전가열장치에 관한 연구)

  • Kim, Shin-Hyo;Lee, Chang-Woo;Bae, Han-Nah;Cho, Dae-Kweon
    • Journal of Advanced Marine Engineering and Technology
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    • v.39 no.9
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    • pp.940-946
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    • 2015
  • In this paper, we study a method that amplifies the output gain of a high voltage pulse using 300 kHz or higher frequency. We conducted a study on a method for amplifying the output gain using the resonance between the capacitance components of the load and the parasitic components of the circuit, instead of the conservative method for amplifying the pulse-amplitude by raising the voltage of the power stage. In particular, the method simplifies the circuit configuration throughout the appliance of flyback-type topology instead of the bridge-type. There are advantages that prevent damage from overload and the heat in the output circuit through the hard switching by amplifying the gain of the output voltage applying to the load as given by the capacitance component of the output electrode to the output pulse waveform. This study proposed a method to enhance the spatial and electrical efficiency of the contact-type heating device through the dielectric heating method applied to the field of medical and industrial heating.

Phase Transformation and Dielectric Properties of <001> 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 Single Crystals (<001> 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 단결정의 상변화 및 유전 특성)

  • Lee, Eun-Gu;Lee, Jae-Gab
    • Korean Journal of Materials Research
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    • v.21 no.7
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    • pp.391-395
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    • 2011
  • The structure and dielectric properties of poled <001>-oriented 0.7Pb($Mg_{1/3}Nb_{2/3})O_3-0.3PbTiO_3$ (PMN-0.3PT) crystals have been investigated for orientations both parallel and perpendicular to the [001] poling direction. An electric field induced monoclinic phase was observed for the initial poled sample. The phase remained stable after the field was removed. A quite different temperature dependence of dielectric constant has been observed between heating and cooling due to an irreversible phase transformation. The results of mesh scans and temperature dependence of the dielectric constant demonstrate that the initial monoclinic phase changes to a single domain tetragonal phase at 370K and to a paraelectric cubic phase at 405K upon heating. However, upon subsequent cooling from the unpoled state, the cubic phase changes to a poly domain tetragonal phase and to a rhombohedral phase. In the ferroelectric tetragonal phase with a single domain state, the dielectric constant measured perpendicular to the poling direction was dramatically higher than that of the parallel direction. A large dielectric constant implies easier polarization rotation away from the polar axis. This enhancement is believed to be related to dielectric softening close to the morphotropic phase boundary and at the phase transition temperature.

Dielectric Characteristics of PbSc1/2Nb1/2O3 Prepared by Using the One-step Solid State Reaction

  • Kim, Yeon Jung
    • Applied Science and Convergence Technology
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    • v.25 no.4
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    • pp.77-80
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    • 2016
  • The $PbSc_{1/2}Nb_{1/2}O_3$ ceramics at a relatively low temperature of $1300^{\circ}C$ was successful synthesized. Solid state reaction of two-step process is not necessary. The dielectric constant, dielectric loss and admittance of ceramic samples were determined. The pyroelectric characteristics are in good agreement with the dielectric properties. Ferroelectric properties of well-formed the $PbSc_{1/2}Nb_{1/2}O_3$ ceramics are in agreement with broad distribution of relaxation phenomenon. Relatively strong frequency dependent of dielectric constant is observed at about $110^{\circ}C$. The distinct thermal hysteresis was observed in the measurement of the dielectric constant and dielectric loss. The critical exponents of during cooling and heating measurements in the $PbSc_{1/2}Nb_{1/2}O_3$ ceramics were 1.14 and 1.59 at 1 kHz, respectively.

Dielectric Properties of Agricultural Properties and Their Use in Moisture Sensing and Other Applications

  • Nelson, Stuart O.
    • Proceedings of the Korean Society for Agricultural Machinery Conference
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    • 1996.06c
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    • pp.293-304
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    • 1996
  • Historical interest in dielectric properties of agricultural products and definitions of dielectric terms and basic principles governing their influence on elelctromagnetic energy are presented briefly . The nature of dielectric properties variation with frequency, temperature , and product density is discussed, Graphical data on the dielectric properties of products are presented that illustrate the dependence of these properties on moisture content, frequency, temperature, and density. Applications microwave dielectric properties of agricultural products are cited that include radio-frequency (RF) and microwave heating for seed treatment, improvement of nutritional and keeping qualities of some products, and controlling insects in grain. Uses of dielectric properties for product quality measurement and the rapid determination of moisture content are described. Principle of moisture determination in bulk grain by RF and microwave measurements are briefly presented.

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Effect of Poling Electric Field and Temperature Change on the Dielectric Anomalies of Relaxor Ferroelectric Strontium-Barium-Niobate Single Crystals

  • Shabbir, Ghulam;Ko, Jae-Hyeon;Kojima, Seiji
    • Journal of the Korean Physical Society
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    • v.73 no.10
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    • pp.1561-1565
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    • 2018
  • The dielectric properties of the uniaxial relaxor ferroelectric $Sr_xBa_{1-x}Nb_2O_6$ with x = 0.75 were investigated along the polar [001] direction as a function of temperature. The capacitance maximum showed the frequency dispersion commonly observed in relaxors. Additional weak dielectric anomalies were observed in the paraelectric phase; they were only seen during the heating process and disappeared upon subsequent cooling. These were attributed to the existence of large polar clusters strongly pinned at defects and/or to random fields and their metastable characters. Aligning the ferroelectric domains along the polar axis at room temperature removed the high-temperature dielectric anomalies. The dependences of the capacitance and the dielectric maximum temperature on the magnitude of the poling field were investigated.

The temperature effect on the electrical properties of W /Ta$_2$O$_5$/ Si structures (온도가 W /Ta$_2$O$_5$ 5/ Si 구조의 전기적 특성에 미치는 영향)

  • 장영돈;박인철;김홍배
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1996.11a
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    • pp.71-74
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    • 1996
  • Ta$_2$O$_{5}$ film ale recognized as promising capacitor dielectric for future DRAM\`s. The electrical properties of Ta$_2$O$_{5}$films greatly depend on the heating condition. In the practical fabrication process, several annealing process, such as the annealing of Al in H$_2$(about 40$0^{\circ}C$) and reflow of BPSG (borophosphosilicate glass) film in $N_2$(about 80$0^{\circ}C$), exist after deposition of Ta$_2$O$_{5}$ film. In this paper, we describe the temperature effect on the electrical properties of W/Ta$_2$O$_{5}$/Si structure. The thin film of Ta$_2$O$_{5}$ and tungsten have been deposited on p-si(100) wafer using the sputtering system. The heating temperature was varied from 500 to 90$0^{\circ}C$ in $N_2$for 30min and The degree of temperature is 100\`C. In a log(J/E$^2$) Vs 1/E plot of typical I-V data, we find a linear relationship for the temperature of 500, $600^{\circ}C$ and as deposition. This could indicate Fowler-Nordheim tunneling as the dominant mode of current transports. However, we can not find a linear relationship for the temperature above $700^{\circ}C$. This could not indicate Fowler-Nordheim tunneling as the dominant mode of current transport. The high frequency (1MHz) capacitance-voltage (C-V) of W/Ta$_2$O$_{5}$/Si Capacitor were investigated on the basis of shift in the threshold voltage and dielectric constant. The magnitude of the threshold voltage and dielectric constant depends on the heating temperature, and increases with heating temperature.temperature.

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Relaxation Characteristic of the Disordered Lead Scandium Niobate

  • Kim, Yeon Jung
    • Applied Science and Convergence Technology
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    • v.24 no.3
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    • pp.47-52
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    • 2015
  • The correlation between admittance and dielectric spectroscopy of dielectric relaxation in lead scandium noibate, have been investigated. Lead scandium niobate, with composition $PbSc_{0.5}Nb_{0.5}O_3$, was prepared by conventional solid state synthesis. Conductance Y'(G), susceptance Y"(B) and capacitance C of lead scandium niobate as a function of frequency and temperature were measured. From the temperature-dependence of RLC circuit, insight into physical significance of the dielectric properties of lead scandium niobate is obtained. The relative strong frequency dependent of dielectric properties in lead scandium niobate is observed, and the phase transition occurred at a broad temperature region. Also, the value of critical exponent ${\gamma}$=1.6 showed on heating process. The long relaxation times part enlarged diffuse by conductivity effects with increasing temperature, and the ordering between $Sc^{3+}$ and $Nb^{5+}$ in PSN influences complex admittance and dielectric properties. Confirmed the typical characteristic of lead-type relaxor in the Raman spectra of lead scandium niobate and major ranges are between 400 and $900cm^{-1}$.

Dielectric Properties of Oriental Lacquer Coating Network

  • 홍진후;김현경;허귀석;최종오
    • Bulletin of the Korean Chemical Society
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    • v.18 no.7
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    • pp.715-719
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    • 1997
  • In order to study the dielectric properties of the oriental lacquer films, three different films have been prepared differing purification and curing procedures. Dielectric properties were measured in the frequency range of 1 Hz to 105 Hz at various temperatures between - 50 ℃ and 150 ℃. The DEA using 1 Hz showed that glass transition and secondary relaxation temperatures of oriental lacquer film are very time dependent. In addition, the frequency-independent negative peak between 25 ℃ and 45 ℃ was observed, which could represent the formation of crosslink by laccase enzyme during heating. On the contrary, the high temperature cured film showed a hardly noticeable negative peak at the temperature range. The relationship between thermodynamic properties and chemical structures has been discussed based on the analysis of the dielectric relaxation behavior using the Cole-Cole plot and the dielectric relaxation intensity.

Bonding Performance of Adhesives with Lamina in Structural Glulam Manufactured by High Frequency Heating System

  • Kim, Keon-Ho;Kim, Se-Jong;Yang, Sang-Yun;Yeo, Hwanmyeong;Eom, Chang-Deuk;Shim, Kugbo
    • Journal of the Korean Wood Science and Technology
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    • v.43 no.5
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    • pp.682-690
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    • 2015
  • The bonding performance of two types of wood adhesives, namely phenol-resorcinol-formaldehyde (PRF) resin and melamine-urea-formaldehyde (MUF) resin for glued laminated timber manufactured by high frequency (HF) heating was evaluated. The HF heating system consists of HF oscillator with dielectric heating system for curing adhesives, and hydraulic press system for clamping glued laminated timber. The designed frequency and output power of the HF system was as 5 MHz and 60 kW, respectively. To verify dielectric heating mechanism under HF oscillation, the heat loss factors of laminae and adhesives were measured. The results show that it is possible to selectively heat adhesives for their curing due to the remarkably higher loss factor of the adhesives than those of wood laminae. The temperature of adhesive in the bonding line reached up to the set temperature within a few seconds by high frequency oscillating, which advanced the curing of adhesive afterwards. The bonding performance, such as shear strength of bonding line, water soaking delamination, and boiling water soaking delamination of PRF resin met the requirement of Korean Standard (KS), however the MUF resin did not meet the KS requirement of boiling water soaking delamination. These results indicate that the HF heating system is successful to manufacture glued laminated timbers with PRF resins to meet the bonding requirements.