• 한국세라믹학회지
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• 제31권7호
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• pp.795-803
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• 1994

Ferroelectric BaTiO3 thin film was produced using BaTi-ethoxide sol. This sol was prepared from BaTi-ethoxide by a partial hydrolysis with ammonia as a basic catalyst and ethylene glycol as a chelating agent. BaTiO3 thin film was prepared from three continuous spin-coating layers of the sol on bare Si(100) wafer at 2500 rpm followed by pyrolysis at $700^{\circ}C$ for 30 min. After the heat treatment, the film was 0.200$\pm$0.010 ${\mu}{\textrm}{m}$ thick and its grain size was 0.059 ${\mu}{\textrm}{m}$. On the other hand, electrical properties were measured for BaTiO3 thin film separately prepared on Au-deposited silicon wafer. The dielectric constant and loss of the BaTiO3 thin film at room temperature was 150~160 and 0.04 respectively, which was measured at 10 kHz and oscillation level of 0.1 V. In the measurements of the dielectric properties at high temperatures, it was observed that the capacitance of the thin film increases steeply, while the dielectric loss reaches maximum around 1$25^{\circ}C$, which corresponds a phase transition from tetragonal to cubic BaTiO3.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 추계학술대회 논문집
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• pp.132-135
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• 1999

Recently, the ceramics of high permittivity are applied to DRAM and FRAM. In this study, (B $a_{x}$ S $r_{l-x}$)Ti $O_3$(BST) ceramics thin films were prepared by Sol-Gel method. BST solution was made and spin-coated on Pt/ $SiO_2$/Si substrate at 4000 [rpm] for 10 seconds. Coated specimens were dried at 150[$^{\circ}C$] for 5 minutes. Coating process was repeated 3 times and then sintered at 750[$^{\circ}C$] for 30 minutes. Each specimen was analyzed structure and electrical characteristics. Thickness of BST ceramics thin films are about 2000($\AA$). Dielectric constant and loss of thin films was little decreased at 1[KHz] ~1[KHz]. Dielectric constant and loss to frequency were 250 and 0.02 in $Ba_{0.7}$S $r_{0.3}$Ti $O_3$. The properly of leakage current as the realation between the current and the voltage was that change of the leakage current was stable when the applied voltage was 0~3[V].

• 한국전기전자재료학회논문지
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• 제33권6호
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• pp.460-464
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• 2020

This study reports the fabrication and application of semitransparent Cu nanoparticle layers. Spin coating and subsequent drying of a Cu colloid solution were performed to deposit Cu nanoparticle layers onto Si and glass substrates. As the spin speed of the spin coating increases, the density of the nanoparticles on the substrate decreases, and the agglomeration of nanoparticles is suppressed. This microstructural variation affects the optical properties of the nanoparticle layers. The transmittance and reflectance of the Cu nanoparticle layers increase with increasing spin speed, which results from the trade-off between the exposed substrate area and surface coverage of the Cu nanoparticles. Since the glass substrates coated with Cu nanoparticle layers are semitransparent and colored, it is anticipated that the application of a Cu nanoparticle-dielectric bilayer structure to transparent solar cells will improve the cell efficiency as well as aesthetic appearance.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.339-339
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• 2007

Metal coating on ceramic powder has long been attracting interest for various applications such as superconductor where the brittle nature of high temperature ceramic superconductor was complemented by silver coating and metalloceramics where mechanical property improvement was achieved via electroless plating. More recently it has become of great interest in embedded passive device applications since metal coating on ceramic particles may result in the enhancement of the dielectric properties of ceramic-polymer composite capacitors. In our study, nickel ion-containing solution was used for coating commercial capacitor-grade $BaTiO_3$ powder. After filtering process, the powder was dried and heat-treated in 5% forming gas at $900^{\circ}C$. XRD and TEM were utilized for the observation of crystallization behavior and morphology of the particles. It was found that the nickel coating characteristics were strongly dependent on the several parameters and processing variables, such as starting $BaTiO_3$ particle size, nickel source, solution chemistry, coating temperature and time. In this paper, the effects of these variables on the coating characteristics will be presented in some detail.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제48권7호
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• pp.514-520
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• 1999

Ferroelectric PZT(30/70)/PZT(70/30) heterolayered thin films were fabricated by spin-coating method on the $Pt/Ti/SiO_2Si$ substrate alternately using(30/70) and PZT(70/30) alkoxide solutions prepared by sol-coating method. The coating and heating procedure was repeated six times to form PZT heterolayered films, and thickness of the film obtained by one-times drying/sintering process was about 40-50 nm. All PZT heterolayered films, showed dense and homogeneous structure without the presence of rosette sturctrue. The relative dielectric constant, remanent polarization and leakage current density of PZT heterolayered films were superior to those of single composition PZT(30/70) and PZT(70/30) films, and those values for the PZT-6 film were 975, $21 \muC/cm^2\; and\; 8\times10^{-9}\; A/cm^2$, respectively. And the PZT-6 heterolayered film showed fairly good fatigue characteristics of remanent polarization and coercive field after application of $10^8$ switching cycles.

• 한국세라믹학회지
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• 제30권9호
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• pp.695-700
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• 1993

In this study, we prepared Pb-Ti stock solution by sol-gel processing and deposited PbTiO3 thin film on a Pt coated SiO2/Si wafer by spin coating using the stock solution. We used lead acetate trihydrate and titanium isopropoxide. The stock solution was partially hydrolized and finally a 0.25M coating solution was prepared. We achieved spin coating at 4000rpm for 30 seconds and heated the thin film at 375$^{\circ}C$ for 5 minutes and at $600^{\circ}C$ for 5 minutes successively, first and second heating state. And the thin film was finally sintered at 90$0^{\circ}C$ for 1 hour in the air. The upper electrode of the thin film was made by gold sputtering and was cricle shape with radius 0.4mm. Measured dielectric constant, dissipation factor and phase transition temperature(Cuire Temp.) were about 275, 0.02 and 521$^{\circ}C$ respectively. To observe ferroelectric characteristics we calculated Pr(remnant polarization) and Ec(coercive field) byhysteresis curve. Ec was 72kV/cm and Pr was 11.46$\mu$C/$\textrm{cm}^2$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.455-458
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• 2001

The thin films of high pemitivity in ferroelectric materials using a capacitor are applied to DRAMs and FRAMs. (Ba, Sr)$TiO_3$ thin films as ferroelectric materials were prepared by the sol-gel method and made by spin-coating on the Pt/Ti/$SiO_2/Si$ substrate at 4,000 [rpm] for 10 seconds. The devices of BST thin films to composite $(Ba_{0.7},Sr_{0.3})TiO_3$ were fabricated by changing of the depositing layer number on $Pt/Ti/SiO_2/Si$ substrate. The thin film capacitor to be ferroelectric devices was investigated by structural and electrical properties. The thickness of BST thin films at each coating numbers 3, 4 and 5 times was $2500[\AA]$, $3500[\AA]$, $3800[\AA]$. The dielectric factor of thin film when the coating numbers were 3, 4 and 5 times was 190, 400 and 460 on frequency l[MHz]. The dielectric loss of BST thin film was linearly increased by increasing of the specimen area.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.455-458
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• 2001

The thin films of high permitivity in ferroelectric materials using a capacitor are applied to DRAMs and FRAMs. (Ba, Sr)TiO$_3$ thin films as ferroelectric materials were prepared by the sol-gel method and made by spin-coating on the Pt/Ti/SiO$_2$/Si substrate at 4,700 [rpm] for 10 seconds. The devices of BST thin films to composite (Ba$\_$0.7/Sr$\_$0.3/)TiO$_3$ were fabricated by changing of the depositing layer number on Pt/Ti/SiO$_2$/Si substrate. The thin film capacitor to be ferroelectric devices was investigated by structural and electrical properties. The thickness of BST thin films at each coating numbers 3, 4 and 5 times was 2500[${\AA}$], 3500[${\AA}$], 3800[${\AA}$]. The dielectric factor of thin film when the coating numbers were 3, 4 and 5 times was 190, 400 and 460 on frequency 1[MHz]. The dielectric loss of BST thin film was linearly increased by increasing of the specimen area.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 제37회 하계학술대회 논문집 C
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• pp.1418-1419
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• 2006

PZT(80/20) powder was prepared by a sol-gel method and PZT thick films were fabricated by the screen-printing method on the alumina substrates. The coating and drying procedure was repeated 4 times. And then the PZT(20/80) precursor solution was spin-coated on the multilayered thick films. A concentration of a coating solution was 0.5 mol/L and the number of coating was repeated from 0 to 6. The porosity of the thick films was decreased with increasing the number of coatings and the PZT thick films with 6-times coated showed the dense microstructure and thickness of about 60-65 ${\mu}m$. All PZT thick films showed the typical XRD patterns of a typical perovskite polycrystalline structure. The relative dielectric constant and the dielectric loss of the PZT-6 thick film were 275 and 3.5, respectively. And the PZT-6 film shows the remanent polarization of 22.1 $C/cm^2$ and coercive field of 13.7 kV/cm.

• 공업화학
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• 제25권2호
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• pp.174-180
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• 2014

양어 사료의 부상시간을 연장시켜, 사료 소비율을 높이고 양식장 수질오염을 저하시키기 위해 사료에 소수성 코팅을 하였다. 상압 유전체장벽방전 플라즈마 반응기 시스템에서 헥사메틸다이실록세인(HMDSO), 톨루엔 및 n-헥세인을 전구물질로 사용하여 사료 입자의 표면에 코팅 층을 형성시켰다. 공정 변수인 플라즈마 구동을 위한 입력 전력, 전구물질 종류, 코팅시간을 변화시키며 코팅 성능을 비교하였다. 코팅된 사료 표면의 물리, 화학적 성질은 접촉각 측정기와 퓨리에 변환 적외선 분광광도계를 이용하여 조사하였다. 소수성 플라즈마 코팅 후 물의 접촉각 증가는 표면이 소수성으로 변화하였음을 나타냈으며, 코팅된 시료의 적외선 분광 스펙트럼을 통해 소수성 피막이 $CH_3$, Si-O-Si, Si-C로 구성되어 있음을 알 수 있었다. 코팅된 사료의 부상시간이 미코팅 사료에 비해 수초에서 3 min까지 증가하였으며, 플라즈마 코팅방법이 사료의 부상성능을 향상시키는 방법으로 사용될 수 있음을 보여 주었다. 코팅 직후 시료에 비해 6일 경과 후 시료의 물 접촉각이 크게 증가하였는데, 이를 통해 에이징 효과를 확인할 수 있었다.