• Journal of the Korean Ceramic Society
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• v.32 no.1
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• pp.31-36
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• 1995

(100) Si was oxidized in N2O ambient, and the film properties of oxynitride dielectrics were compared with pure SiO2. The growth rate, after pre-oxidation in O2/N2 ambient with raising temperature, is faster than that of O2/N2O treatment during the same condition. Nitrogen piles up at the interface of SiO2 and Si substrate and the content is about 2atom%. Comparing with pure SiO2, oxynitride dielectrics shows less dielectric breakdown failures and flat-band voltage shift, and good diffusion barrier property to dopant(BF2) is also observed.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.1402-1404
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• 2009

The silicon nitride films for gate dielectric were deposited by catalytic chemical vapor deposition at low temperature (${\leq}200^{\circ}C$). The mixture of $SiH_4$, $NH_3$ and $H_2$ was used as source gases. The current-voltage (I-V) and the capacitance-voltage (C-V) characteristics of the films were measured. The breakdown voltage and the flat band voltage shift of samples were improved by increase of the $NH_3$ contents and $H_2$ dilution ratio. The defect states were analyzed by photoluminescence (PL) spectra. As the defect states decreased, the breakdown voltage and the flat band voltage shift increased.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.12
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• pp.77-82
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• 1996

The breakdown characteristics of metal-oxide-semiconductor(MOS) capacitors fabricated by Al, polysilicon, and tungsten polycide gate electrodes onto gate oxide was evaluated by time zero dielectric breakdwon (TZDB). The average breakdown field of the gate oxide with tungsten polycide electride was lower than that of the polysilicon electrode. The B model (1~8MV/cm) failure of the gate oxide with tungsten polycide electrode was increased with increasing annealing temperature in the dry $O_{2}$ ambient. This is attributed ot fluorine and tungsten diffusion from thungsten silicide film into the gate oxide, and stress increase of tungsten polcide after annealing treatment.

• Proceedings of the KIEE Conference
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• 2005.07c
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• pp.2271-2273
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• 2005

The cyclic aging for 14days is performed in order to remove the large amount of the volatiles contained in freshly manufactured cable. And the accelerated water treeing test(AWTT) is performed to accelerate the occurance of the water tree in the dielectric of XLPE. In this paper, we examined the AC breakdown voltage characteristics of the 22.9kV power cable before and after the cyclic aging for 14days and the AWTT. As the result, the AC breakdown voltage of the TR CNCV-W power cable is higher than that of CNCV-W and FR CNCO-W power cable.

• Progress in Superconductivity and Cryogenics
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• v.5 no.1
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• pp.52-55
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• 2003

For the dielectric insulation design of any high temperature superconducting (HTS) apparatus in the electrical power systems, the breakdown properties of cryogenic coolants such as $LN_2$ are an important factor of the insulating engineering. Therefore, this paper presented an experimental investigation of breakdown phenomena in $LN_2$ under AC voltage. And we studied the breakdown properties of LN2 with decreasing temperature. Also, the Weibull plots of the breakdown voltage of subcooled $LN_2$ at 65 K for the needle-plane electrode with electrode distance d= 10 mm are studied. The dependence of breakdown voltage for needle-plane and pancake coil-pancake coil electrode on temperature is illustrated. The experimental data suggested that the breakdown voltage of L$N_2$ depend strongly on the temperature of $LN_2$. The breakdown characteristics of $LN_2$ under quasi-uniform and non-uniform electrical field for temperature ranging from 77 K to 65 K were clarified.

• Journal of information and communication convergence engineering
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• v.2 no.2
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• pp.93-96
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• 2004

The a-Si:H TFT using ferroelectric of $SrTiO_3$ as a gate insulator is fabricated on glass. Dielectric characteristics of ferroelectric are superior to $SiO_2$ and $Si_{3}N_{4}$. Ferroelectric increases on-current, decreases threshold voltage of TFT and also improves breakdown characteristics. The a-SiN:H has optical band gap of 2.61 eV, retractive index of 1.8∼2.0 and resistivity of $10^{13}$~$10^{15}$ $\Omega$cm, respectively. Insulating characteristics of ferroelectrics are excellent because dielectric constant of ferroelectric is about 60∼100 and breakdown strength is over 1MV/cm. TFT using ferroelectric has channel length of 8∼20 $\mu\textrm{m}$ and channel width of 80∼200 $\mu\textrm{m}$. And it shows that drain current is 3.4$\mu\textrm{A}$ at 20 gate voltage, $I_{on}$/$I_{off}$ is a ratio of $10^5$~$10^8$ and $V_{th}$ is 4∼5 volts, respectively. In the case of TFT without ferroelectric, it indicates that the drain current is 1.5 $\mu\textrm{A}$ at 20 gate voltage and $V_{th}$ is 5∼6 volts. With the improvement of the ferroelectric thin film properties, the performance of TFT using this ferroelectric has advanced as a gate insulator fabrication technology is realized.

• KIEE International Transactions on Electrophysics and Applications
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• v.3C no.5
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• pp.171-176
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• 2003

For practical electrical insulation design of high temperature superconducting (HTS) power apparatuses, knowledge of the dielectric behavior of both liquid nitrogen (L$N_2$) and subcooled liquid nitrogen (SL$N_2$) are essential. To achieve SL$N_2$ at atmospheric pressure, cryostat was designed and constructed. By pumping up the L$N_2$ in the outer dewar, the temperature of L$N_2$ in the inner dewar at atmospheric pressure can be controlled. The breakdown characteristics of L$N_2$ in quasi-uniform and non-uniform electrical fields for temperatures ranging from 77 K to 65 K at atmospheric pressure and pressure ranging from 0.1 to 0.5 MPa were investigated experimentally. The experimental data suggested that the breakdown voltage (BDV) of L$N_2$ is both highly temperature and pressure dependent. We also carried out statistical analysis of the experimental results using the Weibull distribution. The Weibull shape parameter m for the sphere-to-plane electrodes in SL$N_2$ was estimated to be 11 to 18.

• Proceedings of the KIEE Conference
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• 1990.07a
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• pp.177-179
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• 1990

Recently, it is reported that the behaviour of PECVD under high electric field and current condition has a major effect on MNS device degradation. In this paper, we evaluated the breakdown and TDDB characteristics of Laser assisted PECVD SiN films which is introduced new deposited method. And also, long term insulator breakdown reliability is described by examing time dependent dielectric breakdown under positive voltage. Failure tines against electric field are examined and acceleration factors are obtained for each case. From these data, breakdown wearout limitation for Laser Assisted PECVD SiN film can be characterized.

• KIEE International Transactions on Electrophysics and Applications
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• v.4C no.3
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• pp.117-122
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• 2004

In order to help understand the growth mechanisms of demetallization due to self healing on a metallized polypropylene film (MPPF), several types of defects affecting the breakdown of capacitor dielectrics were made. The breakdown voltages with dielectric thickness were measured at self healing and the demetallized area was evaluated for all of the self healing events. The shapes and growth processes of the demetallized spots on the dielectrics were investigated. As a result, self healing mainly occurred at pin tips, wrinkle sides, and junctions of the wrinkles, and the breakdown voltages strongly depended on the thickness of the dielectrics. In addition, the demetallized area due to self healing was governed by the breakdown voltage and it has been mainly grown by some factors; the applied voltage; the consequent self healing events taking place at the circumference of the original self healing spots; the conductive paths formed by two or more self healing spots and by the consequent self healing spots.

• Journal of the Korean Ceramic Society
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• v.56 no.1
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• pp.1-23
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• 2019

Dielectric materials with inherently high power densities and fast discharge rates are particularly suitable for pulsed power capacitors. The ongoing multifaceted efforts on developing these capacitors are focused on improving their energy density and storage efficiency, as well as ensuring their reliable operation over long periods, including under harsh environments. This review article summarizes the studies that have been conducted to date on the development of high-performance dielectric ceramics for employment in pulsed power capacitors. The energy storage characteristics of various lead-based and lead-free ceramics belonging to linear and nonlinear dielectrics are discussed. Various strategies such as mechanical confinement, self-confinement, core-shell structuring, glass incorporation, chemical modifications, and special sintering routes have been adopted to tailor the electrical properties and energy storage performances of dielectric ceramics. In addition, this review article highlights the challenges and opportunities associated with the development of pulsed power capacitors.