• Title/Summary/Keyword: Dielectric Materials

Search Result 2,119, Processing Time 0.024 seconds

Formation of the Diamond Thin Film as the SOD Sturcture (SOD 구조 형성에 따른 다이아몬드 박막 형성)

  • Ko, Jeong-Dae;Lee, You-Seong;Kang, Min-Sung;Lee, Kwang-Man;Lee, Kae-Myoung;Kim, Duk-Soo;Choi, Chi-Kyu
    • Korean Journal of Materials Research
    • /
    • v.8 no.11
    • /
    • pp.1067-1073
    • /
    • 1998
  • High quality diamond films of the silicon on diamond (SOD) structure are deposited using CO and $H_2$ gas mixture in microwave plasma chemical vapor deposition (CVD), a SOD structure is fabricated using low pressure CVD polysilicon on diamond/ Si(100) substrate. The crystalline structure of the diamond films which composed of { 111} and {100} planes. were changed from octahedral one to cubo-octahedron one as the CO/$H_2$ ratios are increased. The high quality diamond films without amorphous carbon and non-diamond elements were deposited at the CO/$H_2$ flow rate of 0.18. and the main phase of the diamond films shows (111) plane. The diamond/Si(lOO) structure shows that the interface is flat without voids. The measured dielectric constant. leakage current and breakdown field were $5.31\times10^{-9}A/cm^2$ and $9\times{10^7}{\Omega}cm$ respectively.

  • PDF

In Situ X-ray Photoemission Spectroscopy Study of Atomic Layer Deposition of $TiO_2$ on Silicon Substrate

  • Lee, Seung-Youb;Jeon, Cheol-ho;Kim, Yoo-Seok;Kim, Seok-Hwan;An, Ki-Seok;Park, Chong-Yun
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 2011.08a
    • /
    • pp.222-222
    • /
    • 2011
  • Titanium dioxide (TiO2) has a number of applications in optics and electronics due to its superior properties, such as physical and chemical stability, high refractive index, good transmission in vis and NIR regions, and high dielectric constant. Atomic layer deposition (ALD), also called atomic layer epitaxy, can be regarded as a special modification of the chemical vapor deposition method. ALD is a pulsed method in which the reactant vapors are alternately supplied onto the substrate. During each pulse, the precursors chemisorb or react with the surface groups. When the process conditions are suitably chosen, the film growth proceeds by alternate saturative surface reactions and is thus self-limiting. This makes it possible to cover even complex shaped objects with a uniform film. It is also possible to control the film thickness accurately simply by controlling the number of pulsing cycles repeated. We have investigated the ALD of TiO2 at 100$^{\circ}C$ using precursors titanium tetra-isopropoxide (TTIP) and H2O on -O, -OH terminated Si surface by in situ X-ray photoemission spectroscopy. ALD reactions with TTIP were performed on the H2O-dosed Si substrate at 100$^{\circ}C$, where one cycle was completed. The number of ALD cycles was increased by repeated deposition of H2O and TTIP at 100$^{\circ}C$. After precursor exposure, the samples were transferred under vacuum from the reaction chamber to the UHV chamber at room temperature for in situ XPS analysis. The XPS instrument included a hemispherical analyzer (ALPHA 110) and a monochromatic X-ray source generated by exciting Al K${\alpha}$ radiation (h${\nu}$=1486.6 eV).

  • PDF

A Synthesis of $(Ba_{1-x}Sr_x)TiO_3$ Powders by Sol-Gel Route (졸-겔법을 이용한$(Ba_{1-x}Sr_x)TiO_3$분말합성)

  • Kim, Young-Seok;Kim, Duk-Jun;Kim, Hwan
    • Korean Journal of Materials Research
    • /
    • v.2 no.2
    • /
    • pp.151-156
    • /
    • 1992
  • Using $Ba(OH)_2{\cdot}8H_2O, \;Sr(OH)_2{\cdot}8H_2O$ and $Ti(i-OC_3H_7)_4$, fine $(Ba_{1-x}, \;Sr_{x})TiO_3$ powders were synthesized through sol-gel process. The particle size of the powders calcined at $700^{\cric}C$ proved to be 20-40nm by the observation of TEM micrographs and measurement of BET specific surface area. The analysis of XRD patterns showed that the phase of the powders was cubic, and it was identified with the lattice parameters determined through XRD patterns and the shift of (112) peaks that the solid solution powders were synthesized. It was expected through the analysis of relative ratio of cations and the uniformity of compositions in the powders examined by EDAX analysis and relative dielectric constant measurements for sintered body that the distribution of cations was uniform in particle unit.

  • PDF

A Study on the Fabrication of Perovskite (Pb, La)$\textrm{TiO}_3$ Thin Films by ECR PECVD (ECR PECVD법에 의한 페로브스카이트상(Pb, La)$\textrm{TiO}_3$ 박막 증착 연구)

  • Jeong, Seong-Ung;Park, Hye-Ryeon;Lee, Won-Jong
    • Korean Journal of Materials Research
    • /
    • v.7 no.1
    • /
    • pp.33-39
    • /
    • 1997
  • Single phase pero~~skite lead lanthanum titanate thin films were fabricated on $Pt/Ti/SiO_2/Si$ substrates at the temperature of $480^{\circ}C$ by electron cyclotron resonance plasma-enhanced chemical vapor deposition (ECR PECVD) using metal organic sources $Pb(DPM)_2$ pre-flowing treatment in ECIi oxygen plasma before fabricating PLT films 11romote the perovskite nucleation due to stable supplying of the $Pb(DPM)_2$ and providing the F'h-rich atmosphere in the early stage of deposition. $Pb(DPM)_2$ pie-flonring treatment enhanced the properties of PLT films. The charactcristics of the PLT filrris were investigated as a tunction of the flow rate of Ti-source. The PL'i' films were grown in a perovskite structure tvith (100) preferred orientation. The high X-ray diffraction intensity and dielectric constant were obtained from the stoichiometric perovskite $(Pb,La)TiO_3$.

  • PDF

Dielectric and Piezoelectric Properties of Nonstoichiometric Sr1±xBi2±yTa2O9 and Sr1±xBi2±yNb2O9 Ceramics (비화학양론 Sr1±xBi2±yTa2O9 과 Sr1±xBi2±yNb2O9 세라믹의 유전 및 압전 특성)

  • Cho, J.A.;Park, S.E.;Song, T.K.;Kim, M.H.;Lee, H.S.
    • Korean Journal of Materials Research
    • /
    • v.13 no.6
    • /
    • pp.360-364
    • /
    • 2003
  • $Sr_{l}$ $\pm$x/$Bi_{2}$ $\pm$y/$Ta_2$ $O_{9}$ and $Sr_{l}$ $\pm$$Bi_{x}$ $2\pm$y$Nb_2$$O_{9}$ ceramics were prepared by a solid state reaction method. X-ray diffraction analysis indicated that single-phase of Bi-layered perovskite was obtained. According to Sr/Bi content ratio, Curie temperature( $T_{c}$), electromechanical factor($K_{p}$ ) and mechanical quality factor($Q_{m}$ ) were measured. The Curie temperature of SBN(SBT) rose from $414^{\circ}C$(314$^{\circ}C$) to $494^{\circ}C$(426$^{\circ}C$) when Sr/Bi content ratio was increased. In the case of Sr/Bi content ratio = 0.55/2.3, the maximum value of the mechanical quality factor $Q_{m}$ of SBT and SBN were obtained 3320 and 1010, respectively.

Study on the Atmospheric Plasma Characteristics of Dielectric Barrier Discharge due to a Variation of the Duty Ratio of Pulse Modulation (펄스변조의 듀티비 변경에 따른 DBD 대기압 플라즈마 특성 연구)

  • Park, Jong-in;Hwang, Sang-hyuk;Jo, Tae Hoon;Yun, Myoung Soo;Kwak, Hyoung sin;Jin, Gi nam;Jeon, Buil;Choi, Eun Ha;Kwon, Gi-Chung
    • Korean Journal of Materials Research
    • /
    • v.25 no.11
    • /
    • pp.616-621
    • /
    • 2015
  • Atmospheric pressure plasma is used in the biological and medical fields. Miniaturization and safety are important in the application of apply atmospheric plasma to bio devices. In this study, we made a small, pocket-sized inverter for the discharge of atmospheric plasma. We used pulse power to control the neutral gas temperature at which the, when plasma was discharged. We used direct current of 5 V of bias(voltage). The output voltage is about 1 to 2 kilo volts the frequency is about 80 kilo hertz. We analyzsed the characteristics of the atmospheric plasma using OES(Optical emission spectroscopy) and the Current-Voltage characteristic of pulse power. By calculating of the current voltage characteristics, we were able to determine that, when the duty ratio increased, the power that actually effects the plasma discharge also increased. To apply atmospheric plasma to human organisms, the temperature is the most important factor, we were able to control the temperature by modulating the pulse power duty ratio. This means we can use atmospheric plasma on the human body or in other areas of the medical field.

The Piezoelectric Properties of (Na0.5K0.5)NbO3-K5.4Cu1.3Ta10O29 Ceramics with Various K5.4Cu1.3Ta10O29 Doping and Sintering Temperatures

  • Yoon, Jung Rag;Lee, Chang-Bae;Lee, Serk Won;Lee, Heun-Young
    • Transactions on Electrical and Electronic Materials
    • /
    • v.13 no.6
    • /
    • pp.283-286
    • /
    • 2012
  • (1-X)$(Na_{0.5}K_{0.5})NbO_3-XK_{5.4}Cu_{1.3}Ta_{10}O_{29}$ (NKN-KCT) lead-free piezoelectric ceramics have been synthesized by the conventional solid state sintering method, and their sinterability and piezoelectric properties were investigated. Typically, this material is sintered between 1,025 and $1,100^{\circ}C$ for 2 hours to achieve the required densification. Crystalline structures and Microstructures were analyzed by X-ray diffraction and scanning electron microscope. The density, dielectric constant (${\varepsilon}_r$), piezoelectric constant $d_{33}$, electromechanical coupling factor $k_p$ and mechanical quality factor $Q_m$ value of the NKN ceramics depended upon the KCT content and the sintering temperature. In particular, the KCT addition to NKN greatly improved the mechanical quality factor $Q_m$ value. The ceramic with X = 1.0 mol% sintered at $1,050^{\circ}C$ exhibited optimum properties (${\varepsilon}_r$=246, $d_{33}$=95, $k_p$=0.38 and $Q_m$=1,826). These results indicate that the ceramic is a promising candidate material for applications in lead free piezoelectric transformer and filter materials.

Effect of ($\textrm{B}_{2}\textrm{O}_{3}$.$\textrm{Li}_{2}\textrm{O}$) on the Microwave Dielectric Properties of the ($\textrm{Zr}_{0.8}\textrm{Sn}_{0.2}$)$\textrm{TiO}_{4}$ Ceramics (($\textrm{Zr}_{0.8}\textrm{Sn}_{0.2}$)$\textrm{TiO}_{4}$ 세라믹스의 마이크로파 유전특성에 미치는 ($\textrm{B}_{2}\textrm{O}_{3}$.$\textrm{Li}_{2}\textrm{O}$)의 영향)

  • An, Il-Seok;Yun, Gi-Hyeon;Kim, Eung-Su
    • Korean Journal of Materials Research
    • /
    • v.9 no.10
    • /
    • pp.1041-1046
    • /
    • 1999
  • (Zr(sub)0.8Sn(sub)0.2)$TiO_4$세라믹스와 소결조제로서 ($B_2$$O_3$.Li$_2$O)의 첨가에 따른 마이크로파 유전특성 및 미세구조에 미치는 영향에 대하여 연구하였다. 1.0 mol.% $Sb_2$O(sub)5를 첨가하고 130$0^{\circ}C$에서 5시간 소결한 (Zr(sub)0.8Sn(sub)0.2)$TiO_4$세라믹스의 경우 ($B_2$$O_3$.Li$_2$O)첨가량 증가에 따라 치밀화 및 결정립 성장에 의해 유전상수와 Q.f값은 증가하여 첨가량이 0.35wt.%에서 최대값인 38과 59,000을 각각 나타내었으며, 0.50wt.% 이상 첨가한 경우에서는 제 2상의 생성으로 인하여 감소하였다. 1.0 mol% Sb$_2$O(sub)5와 0.35wt.% ($B_2$$O_3$.$Li_2$O)를 첨가한 (Zr(sub)0.8Sn(sub)0.2)TiO$_4$세라믹스를 125$0^{\circ}C$와 135$0^{\circ}C$에서 5시간 소결한 경우에는 각각 미반응 TiO$_2$의 존재와 과대입자성장에 의한 결정립내기공의 생성으로 인하여 마이크로파 유전특성은 저하되었다.

  • PDF

Characterization of the Schottky Barrier Height of the Pt/HfO2/p-type Si MIS Capacitor by Internal Photoemission Spectroscopy (내부 광전자방출 분광법을 이용한 Pt/HfO2/p-Si Metal-Insulator-Semiconductor 커패시터의 쇼트키 배리어 분석)

  • Lee, Sang Yeon;Seo, Hyungtak
    • Korean Journal of Materials Research
    • /
    • v.27 no.1
    • /
    • pp.48-52
    • /
    • 2017
  • In this study, we used I-V spectroscopy, photoconductivity (PC) yield and internal photoemission (IPE) yield using IPE spectroscopy to characterize the Schottky barrier heights (SBH) at insulator-semiconductor interfaces of Pt/$HfO_2$/p-type Si metal-insulator-semiconductor (MIS) capacitors. The leakage current characteristics of the MIS capacitor were analyzed according to the J-V and C-V curves. The leakage current behavior of the capacitors, which depends on the applied electric field, can be described using the Poole-Frenkel (P-F) emission, trap assisted tunneling (TAT), and direct tunneling (DT) models. The leakage current transport mechanism is controlled by the trap level energy depth of $HfO_2$. In order to further study the SBH and the electronic tunneling mechanism, the internal photoemission (IPE) yield was measured and analyzed. We obtained the SBH values of the Pt/$HfO_2$/p-type Si for use in Fowler plots in the square and cubic root IPE yield spectra curves. At the Pt/$HfO_2$/p-type Si interface, the SBH difference, which depends on the electrical potential, is related to (1) the work function (WF) difference and between the Pt and p-type Si and (2) the sub-gap defect state features (density and energy) in the given dielectric.

Development of Polymeric Human Jelly Phantom for Hyper-Thermic Therapy by High Frequency Magnetic Field (고주파 자기장을 이용한 온열요법 치료용의 젤리형 고분자 모의인체)

  • Choi, Chang-Young;Kim, Byung-Hun;Hwang, Young-Jun;Kim, Oh-Young
    • Polymer(Korea)
    • /
    • v.32 no.1
    • /
    • pp.90-93
    • /
    • 2008
  • We developed a variety of polymeric jelly phantoms that can be used in hyperthermia using an electromagnetic wave as an auxiliary cancer therapy. Particularly, using an appropriate material composed of polyethylene, deionized water, and sodium chloride, jelly phantoms for brain was prepared. Also, their electrical properties were characterized by measuring the dielectric constant and conductivity. As the results, overall electrical values of the phantoms decreased with increasing the amount of the components of the materials, excepted for sodium chloride. Additionally, storage characteristics of the phantoms showed a sustainable stability up to 6 months. Based on the experimental results, it can be proposed that jelly phantoms containing a ferro-magnetic particle could be a potential material for cancer therapy following the further study on the temperature elevation effect and the evaluation of electromagnetic properties of the materials.