• 한국진공학회지
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• 제5권2호
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• pp.161-168
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• 1996

For the improvement of microelectronic thin film interconnection materials, dielectric passivation effects on the electromigration phenomena were studied. Using Al-1%Si, various shaped patterns were fabricated and dielectric passivation layers of several structures were deposited on the $SiO_2$ layer. Lifetime of straight pattern showed 2~5 times longer than the other patterns that had various line width and area. It is believed that the flux divergence due to the structural inhomogeneity and so the current crowding effects shorten the lifetime of thin film interconnections. The lifetime of thin film interconnections seems to depend on both the passivation materials and the passivation thickness. PSG/$SiO_2$ dielectric passivation layers showed longer lifetime than $Si_3N_4$ dielectric passivation layers. This results from the PSG on $SiO_2$ layer reduces stress and from the improvement of resistance to the moisture and to the mobile ion such as sodium. This is also believed that the lifetime of thin film interconnections seems to depend on the passivation thickness in case of the same deposition materials.

• 반도체디스플레이기술학회지
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• 제4권1호
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• pp.55-59
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• 2005

The ($Sr_{1-x}Ca_{x})Ti_{3}$(SCT) thin film are deposited on Pt-coated electrode (Pt/TiN/$SiO_{2}$/Si) using RF sputtering method. The maximum dielectric constant of SCT thin film is obtained by annealing at 600[$^{\circ}C$]. The temperature properties of the dielectric loss have a value within 0.02 in temperature lunges of -80 $\∼$ +90[$^{\circ}C$]). The capacitance characteristics had a stable value within ${\pm}4\%$. The drastic decrease of dielectric constant and increase of dielectric loss in SCT thin films is observed above 200[kHz).

• 한국진공학회지
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• 제18권6호
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• pp.435-439
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• 2009

SiOC 박막의 유전상수가 낮아지는 원인에 대하여 굴절계수와 C-V 측정법을 이용하여 얻은 파라미터를 사용하여 연구되었다. SiOC 박막은 해리된 가스의 재결합을 통하여 이온결합에 의해서 형성된다. 전통적으로 유전상수는 굴절률의 제곱으로 얻을 수 있거나 혹은 금속/절연체/실리콘 구조에서 C-V 측정법을 이용하여 얻어진다. 유전상수는 이온과 전자 성분으로 이루어졌다. 그래서 이온과 전자성분을 포함한 SiOC 박막의 평균적인 유전상수에 대하여 조사되었다. 유전상수는 열처리 후 감소되었다. 증착한 박막은 대부분이 이온효과에 의하여 유전상수가 구성되는 경향성이 있으며, 반대로 열처리한 박막에서는 전자에 의한 효과가 컸다. 왜냐하면, 이온의 효과가 열처리에 의해 감소되기 때문이다. 결과적으로 열처리 공정을 통하여 SiOC 박막의 이온효과는 감소하고 전자의 효과는 증가된다는 것을 확인하였다.

• 한국재료학회지
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• 제29권3호
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• pp.175-182
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• 2019

This study examines paraelectric $Bi_{1.5}Zn_{1.0}Nb_{1.5}O_7$ (BZN), which has no hysteresis and high dielectric strength, for energy density capacitor applications. To increase the breakdown dielectric strength of the BZN film further, poly(vinylidene fluoride) BZN-PVDF composite film is fabricated by aerosol deposition. The volume ratio of each composition is calculated using dielectric constant of each composition, and we find that it was 12:88 vol% (BZN:PVDF). To modulate the structure and dielectric properties of the ferroelectric polymer PVDF, the composite film is heat-treated at $200^{\circ}C$ for 5 and 30 minutes following quenching. The amount of ${\alpha}-phase$ in the PVDF increases with an increasing annealing time, which in turn decreases the dielectric constant and dielectric loss. The breakdown dielectric strength of the BZN film increases by mixing PVDF. However, the breakdown field decreases with an increasing annealing time. The BZN-PVDF composite film has the energy density of $4.9J/cm^3$, which is larger than that of the pure BZN film of $3.6J/cm^3$.

• Transactions on Electrical and Electronic Materials
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• 제16권2호
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• pp.95-98
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• 2015

Organic polymer dielectric thin films of styrene and vinyl acetate were prepared by the plasma polymerization deposition technique and applied for the fabrication of an organic thin film transistor device. The structural properties of the plasma polymerized thin films were characterized by Fourier-transform infrared spectroscopy, X-ray diffraction, atomic force microscopy, and contact angle measurement. Investigation of the electrical properties of the plasma polymerized thin films was carried out by capacitance-voltage and current-voltage measurements. The organic thin film transistor device with gate dielectric of the plasma polymerized thin film revealed a low operation voltage of −10V and a low threshold voltage of −3V. It was confirmed that plasma polymerized thin films of styrene and vinyl acetate could be applied to functional organic thin film transistor devices as the gate dielectric.

• 반도체디스플레이기술학회지
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• 제7권4호
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• pp.35-39
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• 2008

We studied deposition of low-k SiOCH dielectric film by PECVD. DEMS(diethoxymethlysilane) precursor, which has two ethoxy groups along with one methyl group attached to the silicon atoms, was used as precursor. The SiOCH film was deposited as a function of oxygen flow rates ranging from 0 to 100sccm. The deposition rate($\AA$/min) of SiOCH film was increased due to the increase of oxygen radical as a function of $O_2$ flow rates. The dielectric constant was decreased from 3.0 to 2.77, as the film was annealed at $450^{\circ}C$ for 30 min. So, it could account that the dielectric constant changes sensitively with $O_2$ flow rates. Also, the leakage current of the annealed film exhibited stable curve than that of asdeposited. These results were caused by the increase of Si-O-Si group and decrease of Si-CH group and OH group within the film by annealing.

• 한국복합재료학회:학술대회논문집
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• 한국복합재료학회 2001년도 춘계학술발표대회 논문집
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• pp.219-223
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• 2001

The on-line cure monitoring during the cure process of composite materials is important for better quality and productivity. The dielectric sensor for cure monitoring consists of base film and electrodes. Because the characteristic of dielectric sensor for the on-line cure monitoring is dependent on the base material, width and number of electrode, etc, the dielectric sensor should be standardized. And the selection of base film material of sensor is very important. In order to prevent the measuring errors generated from the increase of environmental temperature, the base film material should have stable dielectric constant with respect to environmental temperature. In this study, the newly developed dielectric sensor for cure monitoring was designed and the dissipation factor which is function of degree of cure was measured using the sensor. The relationship between the dissipation factor and degree of cure with respect to environmental temperature was investigated.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 춘계학술대회 논문집 센서 박막재료 반도체 세라믹
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• pp.190-193
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• 2003

Sm-doped lead zirconate titanate($Pb_{1.1}(Zr_{0.6}Ti_{0.4})O_3$; PZT) thin films on the Pt(111)/Ti/$SiO_2$/Si(100) substrates prepared by a sol-gel method. The effect on structural and electrical properties of PZT thin films measured according to the Sm content. Sm-doping altered significantly dielectric and ferroelectric properties. The remanent polarization and the coercive field decreased with the increasing Sm content. The dielectric constant and the dielectric loss of PZT thin films decreased with the increasing Sm content. At 100 kHz, the dielectric constant and the dielectric loss of. the 0.3 mol% of Sm-doped PZT thin film were 1200 and 0.12 respectively. The remanent polarization (2Pr) of the 0.3 mol% of Sm-doped PZT thin film was $52.13{\mu}C/cm^2$ and the coercive field was 94.01 kV/cm. The 0.3 mol% of Sm-doped PZT thin film showed an improved fatigue characteristic comparing to the undoped PZT thin film.

• Journal of information and communication convergence engineering
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• 제9권2호
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• pp.217-219
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• 2011

As silicon devices shrink and their density increases, the low dielectric constant materials instead of $SiO_2$ film is required. SiOC film as low-k films was deposited by the capacitively coupled plasma chemical vapor deposition and then annealed at $300{\sim}500^{\circ}C$ to find out the properties of the dependence on the temperature and polarity. This study researched the dielectric constant using by the structure of the metal/SiOC film/p-Si, chemical shift, thickness, refractive index and hardness. The trend of reflective index was inverse proportioned the thickness, but the dielectric constant was proportioned it. The dielectric constant decreased with decreasing the thickness and the increment of the refractive index.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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• pp.155-158
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• 2002

Eu-doped lead zirconium titanate $Pb_{1.1}(Zr_{0.3}Ti_{0.7})O_{3}$ thin films on the Pt/Ti/$SiO_2$/Si substrates prepared by a metalorganic decomposition (MOD) method. The effect on the structural and electrical properties of the films measured according to Eu content. Eu-doping altered significantly the dielectric and ferroelectric properties. The remanent polarization and coercive field decreased with increasing the concentration of Eu content. The dielectric constant and dielectric loss of the film decreased with increasing Eu contents. The 3 mol% of Eu-doped PZT thin film showed large remanent polarization and the fatigue characteristic of the film did not change up to $10^9$ switching cycles.