• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.119-122
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• 2002

The calculated and measured dielectric constant of (1-x)(Al$\sub$1/2/Ta$\sub$1/2/)O$_2$-x(Mg$\sub$1/3/Ta$\sub$2/3/)O$_2$(O$\leq$x$\leq$1.0) solid solutions were investigated by variations of ionic polarizability and crystal structure. (Al$\sub$1/2/Ta$\sub$1/2/)O$_2$ and (Mg$\sub$1/3/Ta$\sub$2/3/)O$_2$were orthorhombic and tetragonal trirutile structure, respectively. When (Al$\sub$1/2/Ta$\sub$1/2/)O$_2$ was substituted by (Mg$\sub$1/3/Ta$\sub$2/3/)O$_2$, the phase transformed to tetragonal structure over 60 mole%. Because the ionic radius of (Mg$\sub$1/3/Ta$\sub$2/3/)O$_2$was slightly bigger than one of (A1$\sub$1/2/Ta$\sub$1/2)O$_2$, the cell parameters increased with an increase of (Mg$\sub$1/3/Ta$\sub$2/3/)O$_2$ substitution. The measured dielectric constant increased with an increase of (Mg$\sub$1/3/Ta$\sub$2/3/)O$_2$ substitution and coincided with dielectric mixing rule and the calculated dielectric constant with the molecular additivity rule. There were some differences between the measured and the calculated dielectric constant. The reason of the lowered dielectric constant comparing with the calculated one was compressed stress due to the electronic structure of tantalum.

• 한국전기전자재료학회논문지
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• 제16권2호
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• pp.108-112
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• 2003

The calculated and measured dielectric constants of (1-x)(A $l_{1}$2/ T $a_{1}$2/) $O_2$-x(M $g_{1}$3/ T $a_{2}$3/) $O_2$ (0$\leq$x$\leq$1.0) solid solutions were investigated by variations of ionic polarizability and crystal structure. (A $l_{1}$2/ T $a_{1}$2/) $O_2$ and (M $g_{1}$3/ T $a_{2}$3/) $O_2$ were orthorhombic and tetragonal trirutile structure, respectively. When (A $l_{1}$2/ T $a_{1}$2/) $O_2$ was substituted by (M $g_{1}$3/ T $a_{2}$3/) $O_2$, the phase transformed to tetragonal structure over 60 mole. Because the total ionic radius of [(Mg+2Ta)/3]$^{4+}$ was slightly bigger than one of [(Al+Ta)/2]$^{4+}$, the lattice parameters increased with an increase of (M $g_{1}$3/ T $a_{2}$3/) $O_2$ substitution. The measured dielectric constant increased with an increase of (M $g_{1}$3/ T $a_{2}$3/) $O_2$ substitution and coincided with dielectric mixing rule and the calculated dielectric constant with the molecular additivity rule. There were some differences between the measured and the calculated dielectric constant. The reason of the lowered dielectric constant comparing with the calculated one was compressed stress due to the electronic structure of tantalum.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2008년도 춘계종합학술대회 A
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• pp.738-739
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• 2008

SiOC 박막은 산소와 bistrimethylsilylmethane 전구체의 유량비를 다르게 하여 플라즈마 발생 화학적 기상 증착방법으로 증착되었다. 증착된 SiOC박막은 Fourier transform infrared spectroscopy에 의해서 분석하였으며, 알킬기에 의한 $1000\;cm^{-1}$ 근처에 나타나는 Si-O-C 결합의 형성되는 모양과 유전상수와의 상관성에 대하여 살펴보았다. 열처리 유전상수는 더욱 낮아졌고, BTMSM/O2의 유량비가 증가함에 따라서 유전상수의 선형적인 상관성은 없었다. 구간별로 유전상수는 증가했다가 감소하는 경향성이 반복적으로 났으며, 유전상수와의 상관성은 FTIR 스펙트라 분석기에 의해서 $950{\sim}1200\;cm^{-1}$에서 나타나는 Si-O-C 결합모드에서 찾을 수 있었다. Si-O-C 결합모양이 넓게 퍼지는 화학적 이동이 관찰되는 곳에서 유전상수는 낮아졌으며, 이러한 화학적 이동이 일어나는 샘플에서 유전상수가 1.65로 조사되었다.

• 한국진공학회지
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• 제18권6호
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• pp.453-458
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• 2009

SiOC 박막을 BTMSM과 산소의 혼합가스를 사용하여 CVD 방법으로 증착하였다. 박막의 특성은 가스 유량비에 따라서 변하였다. 유전상수는 MIS 구조를 이용하여 C-V 측정법에 의하여 얻었다. 결합의 말단을 구성하는 Si-$CH_3$ 결합 사이의 공간효과에 의해서 기공이 만들어지며, 기공의 형성에 의해서 박막의 두께가 증가하였다. 그러나 분극의 감소에 의해서 만들어지는 SiOC 박막은 두께가 감소하면서 유전상수도 감소되었다. 열처리 후 유전상수는 수산기의 기화에 의해서 감소되었다. 박막의 두께는 분극의 감소에 의한 유전상수의 감소와 연관이 있었다. 굴절률은 박막의 두께에 반비례하는 경향성이 있으며, 박막의 두께와 굴절률의 경향성은 열처리 후에도 변하지 않았다.

• Journal of Microbiology and Biotechnology
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• 제15권3호
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• pp.587-594
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• 2005

The contribution of electrostriction of water molecules to the stabilization of the negatively charged tetrahedral transition state of a lipase-catalyzed reaction was examined by means of kinetic studies involving high-pressure and solvent dielectric constant. A good correlation was observed between the increased catalytic efficiency of lipase and the decreased solvent dielectric constant. When the dielectric constant of solvents was lowered by 5.00 units, the losses of activation energy and free energy of activation were 7.92 kJ/mol and 11.24 kJ/mol, respectively. The activation volume for $k_{cat}$ decreased significantly as the dielectric constant of solvent decreased, indicating that the degree of electrostriction of water molecules around the charged tetrahedral transition state has been enhanced. These observations demonstrate that the increase in the catalytic efficiency of the lipase reaction with decreasing dielectric constant resulted from the stabilization of electrostatic energy for the formation of an oxyanion hole, and that this stabilization was caused by the increase of electrostricted water around the charged tetrahedral transition state. Therefore, we conclude that the control of solvent dielectric constant can stabilize the tetrahedral transition state, thus lowering the activation energy.

• 지질공학
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• 제28권4호
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• pp.715-726
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• 2018

제체의 누수를 탐지하는 방법으로서 물리탐사, 온도 계측, 광섬유 등 다양한 방법이 개발되어 왔다. 본 연구에서는 FDR 센서의 유전율상수를 이용한 누수 탐지의 가능성을 파악하기 위하여 취약부와 미취약부로 구성된 물리모형을 제작하였으며 유전율상수, 온도 및 간극수압 센서를 설치하였다. 누수가 형성됨에 따라 유전율상수는 미취약부보다 취약부에서 빠르게 변화되었다. 또한, 취약부에서 간극수압, 온도 및 유전율 상수를 비교하면 유전율 상수의 반응이 가장 빠르고 하류 계측 지점에서도 쉽게 인지되는 특성을 보였다. 이와 같은 특성을 고려할 때, 제체 하류 구간에서 분포형으로 유전율을 측정한다면 누수 탐지에 빠르고 효율적으로 대처할 수 있을 것으로 파악되었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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• pp.1119-1122
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• 2003

In this paper, the electric field distribution in dielectric tube with one layer and spherical dielectric in water was simulated. The reactor was made up of the spherical dielectric that is diameter 2.5[mm], ${\epsilon}_r$ : 5, 100, 1000, 5000 respectively and one glass plate being 2[mm] thickness, ${\epsilon}_r$ : 5 as electrode. The discharge gap was 7[mm]. As a result of the simulation, in case of being about the same value between the dielectric constant of spherical dielectric and water, when the reactor was applied to high voltage dielectric polarization characteristic was trending toward disappearance. To get more strong electric field, the dielectric constant should be higher comparatively, Increasing the spherical dielectric constant, the location of equippotential line was shifting from the interior to the exterior.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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• pp.1143-1146
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• 2003

This paper was simulated the electric field distribution in dielectric tube with two layers and spherical dielectric in water. The reactor was made up of the spherical dielectric that is diameter : 2.5[mm], ${\epsilon}_r$ : 5, 25, 100, 1000, 5000 respectively and two glass plate being 2[mm] thickness, ${\epsilon}_r$ : 5 as electrode. The discharge gap was 9[mm]. As a result of the simulation, in case of being about the same value between the dielectric constant of spherical dielectric and water, when the reactor was applied to high voltage, dielectric polarization characteristic was trending toward disappearance. To get more strong electric field, the dielectric constant should be higher comparatively, Increasing the spherical dielectric constant, the location of equippotential line was shifting from the interior to the exterior.

• JSTS:Journal of Semiconductor Technology and Science
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• 제4권1호
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• pp.52-62
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• 2004

In this paper we look at the effect of Fringe-Enhanced-Barrier-lowering (FEBL) for high-K dielectric MOSFETs and the dependence of FEBL on various technological parameters (spacer dielectrics, overlap length, dielectric stack, S/D junction depth and dielectric thickness). We show that FEBL needs to be contained in order to maintain the performance advantage with scaled high-K dielectric MOSFETs. The degradation in high-K dielectric MOSFETs is also identified as due to the additional coupling between the drain-to-source that occurs through the gate insulator, when the gate dielectric constant is significantly higher than the silicon dielectric constant. The technology parameters required to minimize the coupling through the high-K dielectric are identified. It is also shown that gate dielectric stack with a low-K material as bottom layer (very thin $SiO_2$ or oxy-nitride) will be helpful in minimizing FEBL. The circuit performance issues with high-K MOS transistors are also analyzed in this paper. An optimum range of values for the dielectric constant has been identified from the delay and the energy dissipation point of view. The dependence of the optimum K for different technology generations has been discussed. Circuit models for the parasitic capacitances in high-K transistors, by incorporating the fringing effects, have been presented.

• 한국세라믹학회지
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• 제26권5호
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• pp.617-624
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• 1989

Piezoelectric composites of O-3 connectivity were prepared by thermosetting barium titanate-phenolic resin composite under various cruing pressure. Among three kinds of pore in O-3 type ceramic-polymer composite, such as matrix pores, particle pores, and ceramic-polymer interface pores, the effect of interface porosity on the dielectric and piezoelectric constant was investigated. In pure barium titanate ceramics, the porosity factor of dielectric and piezoelectric constants were 5.7 and 5.0, respectively. However, in BaTiO3-polymer composite, the interface porosity factor of the piezoelectric constant was greater than that of the dielectric constant, interface porosity factor b in d33 was 9.8 and in r 4.6. On the other, piezoelectric voltage constant g33 was independent of the porosity of barium titanate ceramics. But in composite system, the piezoelectric voltage constant g33 was decreased with interface porosity.