• Fire Science and Engineering
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• v.25 no.6
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• pp.21-26
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• 2011

The purpose of this paper is to present the damage patterns of cellular phone (SCH_W830) batteries according to energy sources and have them utilized as data for the settlement of disputes between manufactures and consumers. The reliability was secured by maintaining the ambient temperature and humidity at $22{\pm}2^{\circ}C$ and 40~60 %, respectively. The voltage of the battery used for the tests was measured to be 4.18V between positive pole (+) and negative pole (-)(1), and 4.19 V between positive pole (+) and negative pole (-)(2). This study applied the Korean Industrial Standard (KS) to the flammability test of cellular phones due to a general flame applied to them and found that no damage occurred to the built-in battery even though the flame was applied to the cases of cellular phones for 30 seconds. From the results of immersing the cellular phones in the saline solution (NaCl, 0.9 %) for 180 seconds, it was found that there was a trace of carbonization and melting due to the heat caused by leaking current. It can be seen that when the cellular phones were heated for 70 seconds using a microwave oven (MWO), the areas containing the metal holder, recharging connector, antenna, etc., were melted and discolored and that other areas showed no particular problems. That is, while the external carbonization of cellular phones, built-in metals and dielectric materials, and damage and deformation of the battery terminal block, etc., occurred differently depending on the types of energy sources, the voltage showed comparatively constant characteristics. Therefore, it is thought to be possible to attribute the cause of damage to the battery by performing analysis taking into consideration comprehensively the characteristics of the flame spread pattern as well as the melting and deformation of metals.

• Journal of the Korean Home Economics Association
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• v.30 no.4
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• pp.77-88
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• 1992

To investigate the oxidative stabilities of the ${\gamma}$-ray irradiated soybean during storage and heating and some physico-chemical characteristics of soybean and the extracted soybean oil (SBO) with/without the ${\gamma}$-ray irradiation were determined. The ${\gamma}$-ray level use in irradiation for soybean were 2.5, 5.0 and 10.0 KGY respectively and Acid Value, Peroxide Value, Conjugated Diene Value, Composed Fatty Acids amounts, and Trans Fatty Acid occurrence were determined for all samples, which were incubated at 45$\pm$1$^{\circ}C$ for 25 days heated at 180$\pm$1$^{\circ}C$ for 30 hours. And these values of the ${\gamma}$-ray treated samples were compared to those of nontreated samples. The results were obtained as follows : 1. According to the increased level of the ${\gamma}$-ray irradiation, there was little difference in Dielectric Constant, Viscosity, and the Induction Period by Rancimat. But, in case of 5.0 KGY, oxidative stability was increased more twice than that of non-irradiation. In the quantity of fatty Acids composition of the extracted soybean oil irradiated with 10.0 KGY, palmitic, oleic and linoleic acids were less increased thanb those of non-irradiation, while stearic, linolenic acids were decreased. In the case of 2.5 KGY irradiation, stearic and oleic acids were increased. 2. The Acid Value of SBO according to the ${\gamma}$-ray irradiation level was almost not change, but was 0.1 lower than that of non-irradiation during incubation (45$\pm$1$^{\circ}C$). The Peroxide Value of SBO with the ${\gamma}$-ray irradiation, was very lower than that of non-irradiation, but its effect on oxidative stability was better of SBO treated with 5.0 KGY and 10.0 KGY. In the Fatty Acids composition of SBO, palmitic, stearic, oleic acids were increased, while linoleic, linolenic acids were decreased during incubation(45$\pm$1$^{\circ}C$). This tendency was more obvious due to the ${\gamma}$-ray level. While heating(180$\pm$1$^{\circ}C$), the Acid Value of SBO treated with the ${\gamma}$-ray irradiation was decreased, the Acid Value of SBO irradiated with 2.5 KGY was the lowest. Also the peroxide Values of SBO treated with 5.0 KGY, 10.0 KGY were very lower than that of non-irradiation. Conjugated Diene Value of SBO was almost unchanged according to the ${\gamma}$-level and heating time. 3. When the methyl linoleate was irradiated with the ${\gamma}$-ray, the Trans Fatty Acid was little produced. In case of SBO with non-irradiation, the trans C18:1 was occured about 6.5~7.9%, but trans C18:2 and C18:3 were not shown, while SBO irradiated with the ${\gamma}$-ray 2.5, 5.0, 10.0 KGY, trans C18:3 and C18:2 amount in SBO were increased according to heating time, but trans C18:3 was little occured. As these results, the effects of the ${\gamma}$-ray irradiation to oil containing food were to cut down the energy for food storage and to increase oxdative stability during storge. And also it was shown to be the best that 10.0 KGY of the ${\gamma}$-ray irradiation would be applied to soybean.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.38B no.9
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• pp.744-750
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• 2013

In this paper, we proposed new type of an artificial magnetic conductor(AMC) structure, which has a high impedance surface for realizing the meta-material characteristics. The designed AMC structure set a goal of 3.2GHz, and the reflector, which consists of periodically arrayed AMCs is fabricated and measured. The high impedance improves the reflection coefficient, decreases the system size and interference, and increases the antenna performance. The structure has embodied the high impedance by the thickness and relative permitivity of the dielectric substrate and the design configuration without the metallic via hole which connects the AMC to the GND. The bandwidth is 150% broader than the similar AMC structures. Also, the distance between the antenna and the AMC reflector is decreased by ${\lambda}/10$ as working as the metal(PEC) reflectors. The antenna radiation characteristics are 3dB increased at 10mm away from reflector by measurement. The proposed reflector could be inserted in the portable mobile devices, and the antenna's performance has improved by the reflector. The specific absorption rate is dramatically decreased over 94% because the back radiation of the antenna is shielded.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.23 no.3
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• pp.341-348
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• 2019

In this paper, a monopole type antenna applicable to WLAN and WiMAX standard frequency bands is designed and fabricated. The proposed antenna is designed to have rectangular ring and rectangular patch based on microstrip feeding for triple band characteristics and inserted two stub in the top of the rectangular ring patch to enhance impedance bandwidth characteristics. The proposed antenna has $18.0mm(2W_1+W_2){\times}33.0mm(L_7+L_8+L_9)$ on a dielectric substrate of $27.0mm(W_1){\times}44mm(L_1){\times}1.0mm$ size. From the fabrication and measurement results, impedance bandwidths of 660MHz (2,08 to 2.74GHz) for 2.4/2.5MHz band, 488MHz (3.40 to 3.88GHz) for 3.5MHz band, and 2,180MHz (4.61 to 6.79GHz) for 5,000MHz band were obtained based on the impedance bandwidth. The proposed antenna also obtained the measured gain and radiation pattern in the anechoic chamber.

• The Journal of the Korea institute of electronic communication sciences
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• v.19 no.2
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• pp.345-354
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• 2024

In this paper, we propose a triple band WLAN antenna for Wi-Fi 6E band with DGS. The proposed antenna has the characteristics required frequency band and bandwidth by considering the interconnection of two strip lines and three areas on the ground place. The total substrate size is 31 mm (W) × 50 mm (L), thickness (h) 1.6 mm, and the dielectric constant is 4.4, which is made of 22 mm (W₆ + W₄ + W₅) × 43mm (L₁ + L₂ + L₃ + L₅) antenna size on the FR-4 substrate. From the fabrication and measurement results, bandwidths of 340 MHz (1.465 to 1.805 GHz) for 900 MHz band, 480 MHz (2.155 to 2.635 GHz) for 2.4 GHz band and 1950 MHz (4.975 to 6.925 GHz) for 5.0/6.0 GHz band were obtained on the basis of -10 dB. Also, gain and radiation pattern characteristics are measured and shown in the frequency triple band as required.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.3
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• pp.418-427
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• 1997

The effect of $La_2O_3$ as a dopant on the microstructure structure, crystal structure and electrical properties was studied. $0.05Pb(Sn_{0.5}Sb_{0.5})O_3＋0.11PbTiO_3＋0.84PbZroO_3＋0.4Wt%MnO_2$ (=0.05PSS ＋0.11PT＋0.84PZ+0.4wt%$MnO_2$) systems doped with 0, 0.1, 0.3, 0.5, 0.7, 1, 3, 5 mole% $La_2O_3$ were fabricated and investigated sintering density, crystal structure and micro-structure. The sintered 0.05PSS＋0.11PT＋0.84PZ+0.4wt%$MnO_2$ system doped with $La_2O_3$showed sintering density of the range of 7.683 g/㎤ of 0 mole% doping to 7.815 g/㎤ of 0 mole% doping. The average grain sizes in the range of 0 to 5 mole% $La_2O_3$were decreased from 9.0 $\mu\textrm{m}$ to 1.3 $\mu\textrm{m}$. X-ray diffraction investigation of sintered bodies showed that solid solutions were formed between 0.05PSS＋0.11PT＋0.84PZ+0.4wt%$MnO_2$ system and $La_2O_3$ in the range of 0 to 1 mole% but second phases were formed in case of 3, 5 mole%. Dielectric constants at 1 kHz were increased with 0 to 3 mlole% $La_2O_3$ before and after poling at the condition of 5 $KV_{DC}$/mm at $120^{\circ}C$ or $140^{\circ}C$ during 20 minutes. All Dielectric losses at 1 kHz were less than 1%, Curie temperatures were $208^{\circ}C$, $183^{\circ}C$, $152^{\circ}C$ and $127^{\circ}C$ at 0, 0.5, 1, 3 mole% $La_2O_3$ respectively. The values of $K_p$ were increased from 0 to 3 mole% $La_2O_3$ after poling at condition of 5 $KV_{DC}$mm at the condition of $120^{\circ}C$ or $140^{\circ}C$. The case of 0.7 mole% $La_2O_3$doped 0.05PSS＋0.11PT＋0.84PZ+0.4wt%$MnO_2$ system showed $K_p$ of 14.5% by poling at $140^{\circ}C$ during 20 minutes.

• KSBB Journal
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• v.24 no.1
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• pp.1-8
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• 2009

In the past decade, we have observed rapid advances in the development of biochips in many fields including medical and environmental monitoring. Biochip experiments involve immobilizing a ligand on a solid substrate surface, and monitoring its interaction with an analyte in a sample solution. Metal nanoparticles can display extinction bands on their surfaces. These charge density oscillations are simply known as the localized surface plasmon resonance (LSPR). The high sensitivity of LSPR has been utilized to design biochips for the label-free detection of biomolecular interactions with various ligands. LSPR-based optical biochips and biosensors are easy to fabricate, and the apparatus cost for the evaluation of optical characteristics is lower than that for the conventional surface plasmon resonance apparatus. Furthermore, the operation procedure has become more convenient as it does not require labeling procedure. In this paper, we review the recent advances in LSPR research and also describe the LSPR-based optical biosensor constructed with a core-shell dielectric nanoparticle biochip for its application to label-free biomolecular detections such as antigen-antibody interaction.

• Journal of the Institute of Electronics and Information Engineers
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• v.53 no.6
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• pp.155-166
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• 2016

It is important to configure capacitance(C) of the capacitor and the induction coefficient(L) of the work coil on the resonant circuit design stage in order to induce heating on the object by a precise and constant frequency components in the electromagnetic induction heating equipment. Work coil conducts a direct induction heating according to heating point and area of the object which has a fixed heat factor so that work coil is designed to has fixed value. On the other hands, Capacitor should be designed to be changed in order to be the higher the utilization of the entire equipment. It is extracted the samples by variation of single electrode capacity from the selection stage of raw materials for capacity to the stage of process design for output of the high frequency LC resonance of 700kHz on 1000 VAC maximum voltage and current to $200I_{MAX}$. It is suggested fundamental experiment results in order to prove relation for the optimal design of HF-LC resonance conduction-cooled capacitor based on the response of frequency characteristics and results of output parameters according to variation of the capacitance size.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.184-184
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• 2012

Recently, InGaN/GaN multi-quantum well grown on GaN pyramid structures have attracted much attention due to their hybrid characteristics of quantum well, quantum wire, and quantum dot. This gives us broad band emission which will be useful for phosphor-free white light emitting diode. On the other hand, by using quantum dot emission on top of the pyramid, site selective single photon source could be realized. However, these structures still have several limitations for the single photon source. For instance, the quantum efficiency of quantum dot emission should be improved further. As detection systems have limited numerical aperture, collection efficiency is also important issue. It has been known that micro-cavities can be utilized to modify the radiative decay rate and to control the radiation pattern of quantum dot. Researchers have also been interested in nano-cavities using localized surface plasmon. Although the plasmonic cavities have small quality factor due to high loss of metal, it could have small mode volume because plasmonic wavelength is much smaller than the wavelength in the dielectric cavities. In this work, we used localized surface plasmon to improve efficiency of InGaN qunatum dot as a single photon emitter. We could easily get the localized surface plasmon mode after deposit the metal thin film because lnGaN/GaN multi quantum well has the pyramidal geometry. With numerical simulation (i.e., Finite Difference Time Domain method), we observed highly enhanced decay rate and modified radiation pattern. To confirm these localized surface plasmon effect experimentally, we deposited metal thin films on InGaN/GaN pyramid structures using e-beam deposition. Then, photoluminescence and time-resolved photoluminescence were carried out to measure the improvement of radiative decay rate (Purcell factor). By carrying out cathodoluminescence (CL) experiments, spatial-resolved CL images could also be obtained. As we mentioned before, collection efficiency is also important issue to make an efficient single photon emitter. To confirm the radiation pattern of quantum dot, Fourier optics system was used to capture the angular property of emission. We believe that highly focused localized surface plasmon around site-selective InGaN quantum dot could be a feasible single photon emitter.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.341-341
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• 2016

The discovery of light emission in nanostructured silicon has opened up new avenues of research in nano-silicon based devices. One such pathway is the application of silicon quantum dots in advanced photovoltaic and light emitting devices. Recently, there is increasing interest on the silicon quantum dots (c-Si QDs) films embedded in amorphous hydrogenated silicon-nitride dielectric matrix (a-SiNx: H), which are familiar as c-Si/a-SiNx:H QDs thin films. However, due to the limitation of the requirement of a very high deposition temperature along with post annealing and a low growth rate, extensive research are being undertaken to elevate these issues, for the point of view of applications, using plasma assisted deposition methods by using different plasma concepts. This work addresses about rapid growth and single step development of c-Si/a-SiNx:H QDs thin films deposited by RF (13.56 MHz) and ultra-high frequency (UHF ~ 320 MHz) low-pressure plasma processing of a mixture of silane (SiH4) and ammonia (NH3) gases diluted in hydrogen (H2) at a low growth temperature ($230^{\circ}C$). In the films the c-Si QDs of varying size, with an overall crystallinity of 60-80 %, are embedded in an a-SiNx: H matrix. The important result includes the formation of the tunable QD size of ~ 5-20 nm, having a thermodynamically favorable <220> crystallographic orientation, along with distinct signatures of the growth of ${\alpha}$-Si3N4 and ${\beta}$-Si3N4 components. Also, the roles of different plasma characteristics on the film properties are investigated using various plasma diagnostics and film analysis tools.