• 연구논문집
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• 통권22호
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• pp.151-160
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• 1992

The wear resistance of electroless Ni-P-X(X A1203, Diamond) composite coating layers was studied by Taber abrasion test technique. The wear resistance of composite coating layers was particularly relied upon the codeposited content, particle size and distribution of particles, and heat treatment of coating layers, as well as the electroless nickel plating bath employed. In this study, we lay emphasis on the wear resistance of electroless composite coating layers containing A1203 particles(1.2~Im, 6.7hIm, 11.5lIm, 20l1m) or diamond particles (1.5jim, 5gm). From the result of composite coating A1203 and diamond particles, the wear resistance of composite coating layers is as follows.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.56-56
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• 2009

반도체 device가 점점 고집적화, 다층화 되면서 막질의 평탄화를 위한 CMP (chemical mechanical planarization) 공정은 반도체 제작 공정에서 필수 요건이 되었다. 특히 pad conditioning은 CMP 공정 중, 막질의 제거율과 균일도를 유지시키기 위한 중요한 공정이다. 하지만, conditioner를 장시간 사용할 경우 slurry residue와 같은 잔류 오염물질들이 conditioner의 표면의 오염을 유발할 수 있고 이로 인해 conditioner의 수명이 단축되거나 웨이퍼 표면에 결함을 유발할 수도 있다. 본 연구에서는 이를 방지하기 위해 vapor SAM을 이용하여 Ni conditioner 표면에 소수성 박막을 증착하여 오염여부를 평가해 보았다. 먼저, Ni wafer를 이용하여 증착 온도와 압력에 따라 소수성 박막을 증착하여 표면특성을 평가해 보았다. 증착전과 후에 Ni wafer 표면의 접촉각은 contact angle analyzer (Phoenix 400, SEO, Korea)를 이용하여 측정하였다. 박막 표면 형상과 거칠기는 AFM (XE-100, PSIA, Korea)를 이용하여 평가되었고 묘면 성분 분석을 위해 FT-IR (Nicolet 6700, Thermo Scientific, USA)이 사용되었다. SEM (S-4800, Hitach, Japan)은 박막 증착 전과 후의 conditioner를 이용하여 실제 conditioning후 conditioner 표면의 particle 오염정도를 관찰하기 위해 사용되었다. 또한, conditioner 표면에 실제 오염되어있는 particle 개수를 평가하기 위해 particle size analyzer (Accusizer 780A, Particle Sizing Systems Co., USA)을 사용하였다. 본 실험을 통해 최적 증착 조건을 확립하였으며 실제 conditioner 표면에 소수성 박막을 증착 후 $100^{\circ}$ 이상의 높은 contact angle을 확인할 수 있었다. 또한, 소수성 박막이 증착된 conditioner의 경우 실제 conditioning후 표면 particle 오염이 현저히 감소되었음을 확인할 수 있었다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1990년도 추계학술대회 논문집 학회본부
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• pp.101-105
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• 1990

A DC thermal plasma system has been designed and constructed to obtain diamond films from a mixture of CH4 and H2. The effects of the deposition conditions such as substrate temperature ($850^{\circ}C-1050^{\circ}C$), gas mixing ratio (0.5-1.5% CH4 in H2), chamber pressure (50 - 200 Torr), axial magnetic field (0 - 900 Gauss) on the diamond film properties such as morphology, purity of the film and deposition rate, etc. have been examined with the aids of Scanning Electron Microscopy, X-Ray Diffraction and Raman Spectroscopy. Under optimum conditions, high quality diamond films can be obtained with high deposition rate (>$1{\mu}m/min$). Both of the growth rate and' particle size increased with the substrate temperature but the morphology changed from the faceted to unshaped when the temperature deviates its proper range. Furthermore, higher growth rates of $1.5{\mu}m/min$ can be obtained by applying an axial magnetic field to plasma torch. The observed values of interplanar spacings of diamond were in a good agreement with the values reported in ASTM data and all deposits have the diamond peak of $1332.5\;cm^{-1}$ in the Raman Spectra.

• 한국표면공학회지
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• 제50권5호
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• pp.352-359
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• 2017

The growth of nanocrystalline diamond films on a p-type poly silicon substrate was studied using microwave plasma chemical vapor deposition method. A 6 mm thick poly silicon plate was mirror polished and scratched in an ultrasonic bath containing slurries made of 30 cc ethanol and 1 gram of diamond powders having different sizes between 5 and 200 nm. Upon diamond deposition, the specimen scratched in a slurry with the smallest size of diamond powder exhibited the highest diamond particle density and, in turn, fastest diamond film growth rate. Diamond deposition was carried out applying different DC bias voltages (0, -50, -100, -150, -200 V) to the substrate. In the early stage of diamond deposition up to 2 h, the effect of voltage bias was not prominent probably because the diamond nucleation was retarded by ion bombardment onto the substrate. After 4 h of deposition, the film growth rate increased with the modest bias of -100 V and -150 V. With a bigger bias condition(-200 V), the growth rate decreased possibly due to the excessive ion bombardment on the substrate. The film grown under -150V bias exhibited the lowest contact angle and the highest surface roughness, which implied the most hydrophilic surface among the prepared samples. The film growth rate increased with the apparent activation energy of 21.04 kJ/mol as the deposition temperature increased in the range of $300{\sim}600^{\circ}C$.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1992년도 하계학술대회 논문집 B
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• pp.949-951
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• 1992

A low pressure DC plasma jet has been used to obtain diamond films from a mixture of $CH_4$ and $H_2$ with high deposition rate (>1$\mu\textrm{m}$/min). The effects of the deposition conditions such as torch geometry, substrate temperature, gas mixing ratio, chamber pressure, axial magnetic field on the diamond film properties such as morphology, purity, uniformity of the film and deposition rate, etc. have been examined with the aid of Scanning Electron Microscopy, X-Ray Diffraction, and Raman Spectroscopy. Both the growth rate and particle size increased rapidly for low methane concentrations but saturated and the morphology changed from octahedral to cubic structure when the concentration exceeded 1.0 %. Higher growth rates (>1.5${\mu}m$/min) can be obtained by applying an axial magnetic field to the DC plasma jet. Diamond obtained from the magnetized plasma jet also shows a sharp peak at 1332.5$cm^{-1}$ in the Raman Spectra and this result implies that higher growth rate with a good quality diamond films can he obtained by applying an external magnetic field to the plasma jet.

• 한국표면공학회지
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• 제27권4호
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• pp.193-206
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• 1994

A wear behavior of electroless (Ni-P-X, X: SiC, $Al_2O_3$, Diamond) composite coating layers, formed under various conditions on commerical grade low carbon steel, has been investigated using Taber abrasion tester and scanning electron microscope. Several factors, which are type of particles, co-deposited content, particle size, distribution of particles and heat-treatment, influenced the wear resistance. The wear resistance of the composited coating layers after heat-treatment at $400^{\circ}C$ for 1 hr was increased 70 times with diamond, 15 times with SiC and 8 times with $Al_2O_3$, compared with the electroless nickel plating layer without heat-treatment.

• 한국재료학회지
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• 제22권4호
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• pp.174-179
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• 2012

In this study, we demonstrated a simple and eco-friendly method, including mechanical polishing and attrition milling processes, to recycle sputtered indium tin oxide targets to indium tin oxide nanopowders and targets for sputtered transparent conductive films. The utilized indium tin oxide target was first pulverized to a powder of sub- to a few- micrometer size by polishing using a diamond particle coated polishing wheel. The calcination of the crushed indium tin oxide powder was carried out at $1000^{\circ}C$ for 1 h, based on the thermal behavior of the indium tin oxide powder; then, the powders were downsized to nanometer size by attrition milling. The average particle size of the indium tin oxide nanopowder was decreased by increasing attrition milling time and was approximately 30 nm after attrition milling for 15 h. The morphology, chemical composition, and microstructure of the recycled indium tin oxide nanopowder were investigated by FE-SEM, EDX, and TEM. A fully dense indium tin oxide sintered specimen with 97.4% of relative density was fabricated using the recycled indium tin oxide nanopowders under atmospheric pressure at $1500^{\circ}C$ for 4 h. The microstructure, phase, and purity of the indium tin oxide target were examined by FE-SEM, XRD, and ICP-MS.

• 자원리싸이클링
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• 제22권2호
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• pp.37-43
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• 2013

다이아몬드 입자를 전착한 와이어를 사용하여 실리콘 잉곳을 슬라이싱 하는 방식은 기존의 슬러리를 사용하는 방식과 달리 절단매체인 실리콘카바이드를 사용하지 않기 때문에 웨이퍼링 후에 발생하는 슬러지에 함유되어 있는 고형분의 대부분은 잉곳으로부터 분리되어 나온 실리콘 성분으로 구성되어 있다. 따라서 슬러지에 함유되어 있는 액상성분만 제거하여도 어렵지 않게 90% 이상의 순도를 가지는 실리콘을 회수할 수 있는 이점이 있다. 본 연구에서 다이아몬드 와이어 쏘잉 방식에서 배출된 슬러지로부터 오일 성분을 제거하여 고품위 실리콘 분말을 회수하였으며, 성형 및 소결공정을 통하여 실리콘에 포함되어 있는 유기물을 포함한 금속불순물을 제거하고, 미분체 실리콘의 산화가 용이한 점을 활용하여 열산화 공정으로 3N급 순도의 실리카를 제조하였다.

• 한국분말재료학회지
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• 제24권3호
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• pp.216-222
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• 2017

Synthesized monocrystalline nanodiamond (nD) particles are heat-treated at various temperatures to produce highly structured diamond crystals. The heat-treated nDs show different weight loss ratios during thermogravimetric analysis. The crystallinities of the heat-treated nDs are analyzed using Raman spectroscopy. The average particle sizes of the heat-treated nDs are measured by a dynamic light scattering (DLS) system and direct imaging observation methods. Moreover, individual dispersion behaviors of the heat-treated nD particles are investigated based on ultrasonic dispersion methods. The average particle sizes of the dispersed nDs according to the two different measurement methods show very similar size distributions. Thus, it is possible to produce highly crystallized nD powder particles by a heat-treatment process, and the nD particles are relatively easy to disperse individually without any dispersant. The heat-treated nDs can lead to potential applications such as in nanocomposites, quantum dots, and biomedical materials.

• 한국재료학회지
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• 제6권8호
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• pp.833-840
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• 1996

MPECVD법을 이용하여 다이아몬드 박막을 p형 Si(100)기판 위에 증착하였다. 증착하기에 앞서, 핵생성 밀도를 향상시키기 위하여 40-$60\mu$m 크기의 다이아몬드 분말을 사용하여 6분간 초음파 전처리를 행하였다. 이런 전처리 과정 후, 다이아몬드 박막을 $^900{\circ}C$, 40Torr, 1000W microwave power에서 ${CH}_{4}$와 ${H}_{2}$사용하여 증착하였다. 이렇게 형성된 다이아몬드 박막의 순수도는 Raman spectroscopy로 측정하였으며 박막의 표면은 SEM으로 , 그리고 미세구조와 미세결함은 TEM으로 조사하였다. 반응기체 중 CH4의 농도가 증가함에 따라 다이아몬드의 정형적인 Raman peak와 더불어 다이아몬드가 아닌 제 2상의 peak가 증가하였다. SEM에 의한 박막의 표면은 ${CH}_{4}$가 증가함에 따라 박막의 표면이 뚜렷한 결정형상에서 cauliflower 형태로 변화하였다. 다이아몬드 박막의 결함밀도는 ${CH}_{4}$농도가 증가함에 따라 증가하였으며 결함 중 대부분은 {111}twin이였다. 그리고 MTP(Mulitply Twinned Particle)는 5개의 (111)면으로 형성된 결정으로, 5개의 (111)면은 각각에 대해서 Twin되어 있으며 five-fold symmetry를 나타내었다. 계면에서는 다이아몬드내의 결함들이 핵생성 site를 함유한 작은 지역에서부터 V형재로 퍼져 나갔다.