• Journal of the Korean Ceramic Society
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• v.44 no.7
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• pp.375-380
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• 2007

Tribological properties of carbon layers produced by high temperature chlorination of SiC ceramic and DLC (diamond-like carbon) coatings produced by ion plating method were investigated and compared. Carbon coatings were produced by exposure of ball and disc type SiC in chlorine and hydrogen gas mixtures at $1200^{\circ}C$. After treatment for 10 h, dense carbon films up to $180{\mu}m$ in thickness were formed. Tribological behavior of newly developed carbon films were compared with that of DLC films. Wear resistance and frictional coefficient of the surface modified ball and disc type SiC were significantly improved compared to an untreated SiC specimen, and also the modified carbon layer had better performance than DLC coatings. Therefore, in this study, the newly developed carbon films have several advantages over existing carbon coatings such as DLC coatings and showed superior tribological performances.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2011.05a
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• pp.117-118
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• 2011

초경합금 위에 RF Magnetron Sputter를 이용하여 Ti 중간층을 증착 후 MPECVD(Microwave Plasma Enhanced Chemical Vapor Deposition) 시스템을 이용하여 나노결정 다이아몬드 박막을 증착 하였다. 공정압력, 마이크로웨이브 전력, Ar/$CH_4$ 조성비, 기판온도를 일정하게 놓고 직류 bias의 인가 여부를 변수로 하고 증착시간을 0.5, 1, 2시간으로 변화시켜 박막을 제작하였다. 제작된 시편은 FE-SEM과 AFM을 이용하여 다이아몬드 박막의 표면과 다이아몬드 박막의 표면 거칠기 등을 측정하였고, Raman spectroscopy와 XRD를 이용하여 다이아몬드 결정성을 확인하였다. Automatic Scratch �岵謙�ter를 이용하여 복합박막의 층별 접합력을 측정하였다. 바이어스를 인가하지 않고 다이아몬드 박막을 증착할 경우 증착 시간이 증가할수록 다이아몬드 입자의 평균 크기가 증가하며 입자들이 차지하는 면적이 증가하는 것을 확인하였다. 그러나 1시간이 경과해도 아직 완전한 박막은 형성되지 못하고 2시간 이상 증착 시 완전한 박막을 이루는 것이 확인되었다. 이에 비해서 바이어스 전압을 인가할 경우 1시간 내에 완전한 박막을 이루었다. 표면 거칠기는 바이어스를 인가한 경우가 그렇지 않은 경우에 비해서 조금 높은 것으로 나타났다. 이러한 바이어스 효과는 표면에서의 핵생성 밀도 증가와 재핵생성 속도 증가에 기인하는 것으로 해석된다.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2009.10a
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• pp.177-178
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• 2009

DLC (Diamond-like Carbon) 코팅막은 저마찰, 고경도, 낮은 표면조도 등의 우수한 특성을 갖는 박막 물질로 다양한 산업분야에서 그 코팅막의 활용을 목적으로 응용연구가 활발하게 이루어지고 있다. 본 연구에서는 플라즈마 화학기상증착(PCVD) 공정을 이용하여 바이어스, 진공도, 공정 온도 등의 코팅 조건 변수를 이용하여 DLC 코팅막을 제작하였다. 또한, 코팅막은 공정 조건에 따라 증착속도, 표면 및 단면 조직, 밀착력, 경도, 마찰계수 등의 특성을 평가하였다. 플라즈마 화학기상증착법을 이용한 DLC 코팅막 제조는 상온과 $175^{\circ}C$에서 이루어졌으며, 저온 중 DLC 코팅막 제조가 가능해짐에 따라 고분자 와 같은 저융점을 갖는 피처리물의 코팅처리가 가능하여 산업적 응용의 확대가 기대된다. SEM 표면 조직 관찰에 따른 DLC 코팅막의 표면조직과 조도는 공정조건에 따라 큰 차이는 보이지 않았지만, 밀착력에 있어서는 매우 큰 차이를 나타내었다. 스크래치 시험 결과 가장 높은 밀착력은 100 N 이상을 나타내었으며, 이 때의 마찰계수는 약 0.02를 나타내었다. 가장 낮은 마찰계수는 약 0.01을 보였으며, 이때의 밀착력은 25 N을 나타내었다. 증착속도는 바이어스 전압의 증가에 따라 증가하는 경향을 나타내었으며, 온도의 증가에 따라 감소하는 경향을 나타내었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.1184-1187
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• 2003

Electrochemical capacitors are becoming attractive energy storage systems particularly for applications involving high power requirements such as hybrid systems consisting of batteries and electrochemical capacitors for electric vehicle propulsion. A new type electric double layer capacitor (EDLC) was constructed by using carbon nanofibers (CNFs) and DAAQ(1,5-diaminoanthraquinone) electrode. Carbonaceous materials are found in variety forms such as graphite, diamond, carbon fibers etc. While all the carbon nanofibers include impurities such as amorphous carbon, nanoparticles, catalytic metals and incompletely grown carbons. We have eliminated of Ni particles and some carbonaceous particles in nitric acid. Nitric acid treated CNFs could be covered with very thin DAAQ oligomer from the results of CV and TG analyses and SEM images. DAAQ oligomer film exhibited a specific capacity as 45-50 Ah/kg in 4M $H_2SO_4$. We established Process Parameters of the technique for the formation of nano-structured materials. Furthermore, improved the capacitive properties of the nano structured CNFs electrodes using controlled solution chemistry. As a result, CNFs coated by DAAQ composite electrode showed relatively good electrochemical behaviors in acidic electrolyte system with respect to specific capacity and scan rate dependency.

• Journal of the Korean institute of surface engineering
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• v.54 no.5
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• pp.207-212
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• 2021

The mechanical and electrical characteristics can be improved in 3D stacked IC technology which can accomplish the ultra-high integration by stacking more semiconductor chips within the limited package area through the Cu direct bonding method minimizing the performance degradation to the bonding surface to the inorganic compound or the oxide film etc. The surface was treated in a ultrasonic washer using a diamond abrasive to remove other component substances from the prepared cast plate substrate surface. FE-SEM was used to analyze the bonding characteristics of the bonded copper substrates, and the cross section of the bonded Cu conjugates at the sintering junction temperature of 100 ℃, 150 ℃, 200 ℃, 350 ℃ and the pressure of 2303 N/cm² and 3087 N/cm². At 2303 N/cm², the good bonding of copper substrate was confirmed at 350 ℃, and at the increased pressure of 3087 N/cm², the bonding condition of Cu was confirmed at low temperature junction temperature of 200 ℃. However, the recrystallization of Cu particles was observed due to increased pressure of 3087 N/cm² and diffusion of Cu atoms at high temperature of 350 ℃, which can lead to degradation in semiconductor manufacturing.

• Tribology and Lubricants
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• v.38 no.6
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• pp.227-234
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• 2022

Recently, the demand for improving energy efficiency has rapidly increased because of the growing concerns over environmental issues. In this work, the tribo-test and simulation for the initial wear and lubrication performance were performed for the piston pin in the small end system of the connecting rod of a marine engine, to obtain useful data for improving the efficiency of marine engine systems. In addition, a diamond-like carbon (DLC) coating was applied to the piston pin to explore feasibility of eliminating the bush used in the system. The initial wear and lubrication characteristics between the uncoated piston pin and bush were compared with that between the DLC-coated piston pin and connecting rod in the tribo-test. The simulation for the wear and lubrication performance according to the wear progression was conducted based on the data obtained from the test. The wear characteristics were quantitatively assessed by the wear depth and wear volume, and the lubrication performance was characterized with the change of pressure and minimum oil film thickness with respect to the crank angle. It was found that the DLC-coated piston pin may provide better initial wear characteristics and lubrication performance. The results of this work may provide fundamental information for marine engines with improved efficiency.

• Journal of the Korean Society for Heat Treatment
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• v.35 no.2
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• pp.51-56
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• 2022

In this study, we controlled the shape of a carbon layer on gallium oxide templates. Gallium oxide layers were deposited on sapphire substrates using mist chemical vapor deposition. Subsequently, carbon layers were formed using radio frequency plasma chemical vapor deposition. Various shapes of carbon structures appeared according to the fraction of methane gas, used as a precursor. As methane gas concentration was adjusted from 1 to 100%, The shapes of carbon structures varied to diamonds, nanowalls, and spheres. The growth of carbon isotope structures on Ga₂O₃ templates will give rise to improving the electrical and thermal properties in the next-generation electronic applications.

• Journal of the Korean Vacuum Society
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• v.18 no.5
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• pp.372-376
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• 2009

In the modern semiconductor industry, lithography process is used to construct specific patterns. However, due to the decreasing of line width, these days, more and more researchers are interested in PMMA(Poly Methyl Methacrylate) lithography by using e-beam instead of the prior method, PR(Photoresist) lithography by using UV(Ultra-Violet). Additionally, the patterns constructed by lithography are collapsed during the process of cleansing remnants and the resistance against the breakdown of the patterns is known to be proportional to the elastic modulus of pattern-constructing materials. In this research, we measured the change of hardness and elastic modulus of PMMA film surface according to the change of time spent to soft-bake the PMMA film. During the measurement, we controlled the tip pressure from $25{\mu}N$ to $8,500{\mu}N$ having intervals that are $134.52{\mu}N$. For these measurements, we used the Triboindenter from Hysitron to gauge the hardness and elastic modulus and the tip we used was Berkovich diamond Tip.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.32 no.4
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• pp.121-127
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• 2022

β-Gallium oxide (Ga₂O₃), an ultra-wide bandgap semiconductor, has attracted great attention due to its promising applications for high voltage power devices. The most stable phase among five different polytypes, β-Ga₂O₃ has the wider bandgap of 4.9 eV and higher breakdown electric field of 8 MV/cm. Furthermore, it can be grown from melt source, implying higher growth rate and lower fabrication cost than other wide bandgap semiconductors such as SiC, GaN and diamond for the power device applications. In this study, β-Ga₂O₃ bulk crystals were grown by the edge-defined film-fed growth (EFG) process. The growth direction and the principal surface were set to be the [010] direction and the (100) plane of the β-Ga₂O₃ crystal, respectively. The spectra measured by Raman an alysis could exhibit the crystal phase an d impurity dopin g in the β-Ga₂O₃ ingot, and the crystallinity quality and crystal direction were analyzed using high-resolution X-ray diffraction (HRXRD). The crystal quality and various properties of as-grown β-Ga₂O₃ ribbon was systematically analyzed in order to investigate the spatial variation in entire crystal grown by EFG method.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.34 no.1
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• pp.1-7
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• 2024

β-Ga₂O₃ is a material with a wide band gap of ~4.8 eV and a high breakdown-voltage of 8 MV/cm, and is attracting much attention in the field of power device applications. In addition, compared to representative WBG semiconductor materials such as SiC, GaN and Diamond, it has the advantage of enabling single crystal growth with high growth rate and low manufacturing cost [1-4]. In this study, we succeeded in growing a 10 mm thick β-Ga₂O₃ single crystal doped with 0.3 mol% SnO₂ through the EFG (Edge-defined Film-fed Growth) method using multi-slit structure. The growth direction and growth plane were set to [010]/(010), respectively, and the growth speed was about 12 mm/h. The grown β-Ga₂O₃ single crystal was cut into various crystal planes (010, 001, 100, ${\bar{2}}01$) and surface processed. The processed samples were compared for characteristics according to crystal plane through analysis such as XRD, UV/VIS/NIR/Spec., Mercury Probe, AFM and Etching. This research is expected to contribute to the development of power semiconductor technology in high-voltage and high-temperature applications, and selecting a substrate with better characteristics will play an important role in improving device performance and reliability.