• 제목/요약/키워드: Device-to-Device

검색결과 25,316건 처리시간 0.053초

국내 의료기기 표준 분석 및 개선에 관한 연구 (A Study on the Analysis and Improvement of Medical Device Standards in Korea)

  • 강용완;김경아
    • 대한의용생체공학회:의공학회지
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    • 제44권3호
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    • pp.204-210
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    • 2023
  • This study focuses on analyzing medical device standards and regulatory requirements in the medical device industry, based on the Medical Device Act in Korea. The objective of this analysis is to determine whether the domestic standards for medical devices in Korea align with international and regional standards. Furthermore, it aims to identify the current application of domestic standards in ensuring the safety and essential performance of medical devices. The analysis revealed that out of a total of 281 domestic standards, 127 standards reference international standards. In terms of the application of domestic standards to specific items, there were 473 types of instruments/machines, 30 types of medical supplies, and 45 types of dental materials. However, the level of compliance with international standards among the domestic medical device standards was only 21%. Upon detailed analysis, general and collateral standards accounted for 24%, while particular standards accounted for 19%. This indicates a significant deviation from the latest international standards. On the other hand, the level of compliance with international standards was analyzed to be 60% for particular standards and 72% for general and collateral standards in Korean industrial standards (KS). Considering these results, the disparities between domestic standards and international standards underscore the need for discussions on domestic medical device regulation and standardization. In conclusion, this study emphasizes the significance of maintaining up-to-date medical device standards and ensuring their alignment with international standards to ensure the safety and quality of medical devices. The findings highlight the necessity for further efforts to strengthen the domestic standardization system in order to promote the development of safe and high-quality medical devices.

Windows System에서 Device Driver Failure로 인한 경제적인 피해 산출 모델 연구 (Study of Economic Damage Due to Windows Device Driver Failure)

  • 김성민
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2008년도 하계종합학술대회
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    • pp.1163-1164
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    • 2008
  • From the complexities and functional/operational expectations, the compositions of PC devices requires Device Drivers to deliver full performance of the Hardware. However, due to quick transition of hardwares and expectations of better performance of the system. As a rest users are exposed of unexpected failures of device drivers which will cause malfunction of the system which consequently cause damages in quantity as well as quality wise. In this paper, the method of calculation and/or forecast to unexpected failure will be suggested. It may not be the answer but can be a guide to calculation to economic damage due to device driver failure.

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AC Modeling of the ggNMOS ESD Protection Device

  • Choi, Jin-Young
    • ETRI Journal
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    • 제27권5호
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    • pp.628-634
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    • 2005
  • From AC analysis results utilizing a 2-dimensional device simulator, we extracted an AC-equivalent circuit of a grounded-gate NMOS (ggNMOS) electrostatic discharge (ESD) protection device. The extracted equivalent circuit is utilized to analyze the effects of the parasitics in a ggNMOS protection device on the characteristics of a low noise amplifier (LNA). We have shown that the effects of the parasitics can appear exaggerated for an impedance matching aspect and that the noise contribution of the parasitic resistances cannot be counted if the ggNMOS protection device is modeled by a single capacitor, as in prior publications. We have confirmed that the major changes in the characteristics of an LNA when connecting an NMOS protection device at the input are reduction of the power gain and degradation of the noise performance. We have also shown that the performance degradation worsens as the substrate resistance is reduced, which could not be detected if a single capacitor model is used.

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Design of a new five-link haptic device considering its dynamics

  • Moon, Chan-Woo;Lee, Sung-Ho;Chung, J.K.
    • 제어로봇시스템학회:학술대회논문집
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    • 제어로봇시스템학회 2003년도 ICCAS
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    • pp.2535-2539
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    • 2003
  • The haptic system becomes an essential device in the area of tele-operation, video entertainment and medical operation. To control a haptic device, impedance control method is widely used, but force sensor costs so much that open-loop control method is usually preferred for commercial purpose. In this case, modeled/un-modeled dynamics affects the performance of device. In this paper, we present a new 3DOF five-link type haptic device that we can reduce the effect of device dynamics and compensate its dynamics. We also evaluate its performance.

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탄소나노튜브 구조를 이용한 NEMS소자의 비선형 동역학 (Nonlinear Dynamics of Carbon Nanotube-Based Nanoelectromechanical Device)

  • 이수일
    • 한국소음진동공학회:학술대회논문집
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    • 한국소음진동공학회 2005년도 춘계학술대회논문집
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    • pp.423-423
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    • 2005
  • A carbon nanotube-based nanoelectromechanical device in resonance is examined theoretically. Mechanical deflections are electrically induced and resonantly excited at the fundamental frequency in cantilevered carbon nanotube. The electrically conducting elastic beam with van der Waals interactions at the tip is used for the modeling of the carbon nanotube device. Due to the elastic, electrical, and van der Waals interactions, the total energy of the system shows the unsymmetric two-well potentials. The predictions can be made that the device exhibits its nonlinear dynamic features in the two-well potentials. Also it is predicted that the fundamental frequency of the carbon nanotube device was changed by the nonlinear interactions induced by electrical and van der Waals potentials between carbon nanotube and ground surface of the device.

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고정밀 전기식 힘측정기의 불확도평가 절차 및 응용 (Procedure for Uncertainty Evaluation of a Precision Electric Force Measuring Device and Its Application)

  • 김갑순;강대임
    • 한국정밀공학회지
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    • 제16권12호
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    • pp.161-167
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    • 1999
  • This paper describes the calibration method and the calculation equations of expanded uncertainty for a precision electric force measuring device. The calibration of the electric force measuring device is performed three times (0 ${\circ}$(first time), $120{\circ}$(second time), $240{\circ}$(third time)) at each calibration point. It is usually selected ten points from zero load to rated load of the electric force measuring device. The expanded uncertainty is calculated by combining A type standard uncertainty and B type standard uncertainty. The calibration method and the calculation equations of expanded uncertainty can be widely used in the calibration of the precision electric force measuring device.

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Influence of Silicon and Seed Particles on the Reconstruction Characteristics and Exaggerated Grain Growth of MgO Protective Layer by Over-Frequency Accelerated Discharge in ACPDPs

  • Kwon, Sang-Koo;Kim, Jeong-Ho;Moon, Seung-Kyu;Choi, Jong-Kwon;Park, Kyu-Ho;Han, Sung-Su
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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    • pp.957-960
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    • 2008
  • The influences of silicon and MgO seed particle on the reconstruction characteristics of MgO protective layer were investigated to clarify the mechanism of reconstruction and exaggerated grain growth (EGG) in AC-PDP. The reconstruction and EGG are closely correlated with the driving force for nucleation and growth, interface energy and initial size distribution of MgO protective layer in plasma space during discharge in AC-PDP.

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다층구조로 된 고분자 제형의 약물 방출에 대한 모델링 (Modeling for Multilayered Polymer Matrix Drug Delivery Device)

  • 변영로;정서영;김영하
    • Journal of Pharmaceutical Investigation
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    • 제19권2호
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    • pp.87-92
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    • 1989
  • The multilayered monolithic type transdermal delivery device has been designed and analyzed by a numerical analysis. The device consists of three layered polymer matrices which posess the different diffusion parameters, respectively. The purpose of this study was to design an ideal transdermal drug delivery device which is capable of initial burst and zero order release later on. Numerical modelings were simulated for a dispersed and a dissolved multilayered monolithic system. The results showed that the dispersed multilayered monolithic system could meet the requirements for an ideal transdermal delivery device.

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양방향성 형상기억합금을 이용한 공작물 척킹장치: 유용성 검증 (Workpiece-Chucking Device Using Two-Way Shape Memory Alloys: Feasibility Test)

  • 신우철;노승국;박종권
    • 한국생산제조학회지
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    • 제18권5호
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    • pp.462-468
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    • 2009
  • In this study, a workpiece-chucking device that generates a chucking force from a shape memory alloy is introduced. This paper first presents train procedure to transform a commercial one-way shape memory alloy into a two-way shape memory alloy, which makes unclamping mechanism of the chucking device simpler than that using the one-way shape memory alloy Second, it describes a conceptual design of the workpiece-chucking device using the two-way type shape memory alloy. Third, it presents a prototype and its chucking characteristics, such as time-response of clamping/unclamping operations and a relationship between temperatures and chucking forces. Finally, it describes a mill-machining test conducted with the prototype. The results confirm that the proposed workpiece-chucking device is feasible for micro machine-tools.

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VBIC Model Application and Parameter Extraction and Optimization for SiGe HBT

  • Lee, Sang-Heung;Park, Chan-Woo;Lee, Seung-Yun;Lee, Ja-Yol;Kang, Jin-Yeong
    • 한국통신학회논문지
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    • 제28권8A호
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    • pp.650-656
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    • 2003
  • In 1995, a group of representatives from the integrated circuits and computer-aided design industries presented a industry standard bipolar model called the VBIC model. The VBIC model includes the improved Early effect, quasi-saturation, substrate parasitic, avalanche multiplication, and self-heating which are not available in the conventional SGP model. This paper applies VBIC model for SiGe HBT device and develops an accurate and efficient methodology to extract all the DC and AC parameters of the VBIC model for SiGe HBT device at room temperature. Simulated results by the extracted VBIC model parameter are compared with the measurement data and show very good agreement in both DC and s-parameters prediction.